Cypress Semiconductor Corp CY7C1513KV18-333BZC

Overview

CY7C1513KV18-333BZC from Cypress Semiconductor is a 4M × 18, 72-Mbit QDR® II SRAM with separate read/write ports, 333 MHz clock frequency, double data rate (666 MHz effective) interfaces on both ports, and 1.8 V core / 1.4–1.8 V I/O supply - deployed in high-bandwidth packet buffering for network line cards and switch fabric controllers.

For engineers reviewing the CY7C1513KV18-333BZC datasheet, CY7C1513KV18-333BZC pinout, CY7C1513KV18-333BZC application, or CY7C1513KV18-333BZC equivalent, key selection criteria include concurrent read/write capability, four-word burst timing, echo clock (CQ/CQ) support for high-speed data capture, DOFF-configurable 1.5-cycle vs. 1-cycle read latency, and FBGA-165 package compatibility with DDR memory subsystem layouts.

Technical Context

The CY7C1513KV18-333BZC implements QDR II architecture with fully independent synchronous read and write ports sharing a multiplexed 20-bit address bus (A[19:0]), enabling true concurrent transactions without bus turnaround. Its internal pipelined structure uses rising-edge-triggered K/K clocks for address/data capture and C/C clocks for output timing.

It integrates a phase-locked loop (PLL) for precise data placement, supports programmable impedance via ZQ pin, and provides byte write select (BWS[1:0]) for granular 18-bit word updates. Read latency is configurable via DOFF pin: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), matching system timing budgets across different controller generations.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, with 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1513KV18-250BZC, the -333BZC delivers +33% bandwidth at higher power; versus AS7C35128PFS-333BIN, it provides superior signal integrity via echo clocks and flexible latency tuning - critical for next-generation networking silicon integration.

Availability

CY7C1513KV18-333BZC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric controllers, telecom baseband processing, and high-speed test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1513KV18-333BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

The QDR® II SRAM product line targets high-bandwidth, low-latency memory subsystems in networking and telecommunications infrastructure - emphasizing concurrent access, deterministic timing, and signal integrity at multi-GHz data rates.

FAQ

What is the function of the DOFF pin on CY7C1513KV18-333BZC?

The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin with high-frequency controllers; when LOW, it selects 1-cycle latency for minimal delay. This setting is sampled at power-up and remains static during operation - no dynamic reconfiguration is supported.

Can CY7C1513KV18-333BZC operate with only a single clock domain?

Yes - the device supports single-clock-mode operation where K and C are tied together (and K and C likewise), eliminating need for separate clock pairs. In this mode, data is latched and driven using the same clock edges, simplifying system design at the cost of reduced skew tolerance compared to differential clocking.

What is the purpose of the ZQ pin and how must it be connected?

The ZQ pin enables on-die impedance calibration for HSTL-compatible output drivers. It must be connected to a precision 240 Ω resistor to ground; deviation beyond ±1% affects output drive strength and signal integrity. Calibration occurs automatically at power-up and can be retriggered via JTAG instruction.

How does byte write select (BWS) work for the 18-bit data width?

BWS[1:0] are two independent active-low signals: BWS0 controls write enable for D[8:0], and BWS1 controls D[17:9]. When either is deasserted, the corresponding 9-bit nibble retains its prior value - enabling partial-word updates without read-modify-write cycles. Both signals are sampled synchronously with D[17:0] on the K clock edge.