Cypress Semiconductor Corp CY7C1513KV18-333BZI

Overview

CY7C1513KV18-333BZI from Cypress Semiconductor is a 4M × 18, 72-Mbit QDR® II SRAM with separate read/write ports, 333 MHz clock operation (666 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent read/write transactions with four-word burst architecture and echo clocks (CQ/CQ) for high-speed data capture in networking packet buffers and baseband memory subsystems.

For engineers reviewing the CY7C1513KV18-333BZI datasheet, CY7C1513KV18-333BZI pinout, CY7C1513KV18-333BZI application, or CY7C1513KV18-333BZI equivalent, key selection criteria include 1.8 V core/1.4 V I/O compatibility, FBGA-165 package footprint, DOFF-controlled read latency (1 or 1.5 cycles), BWS[1:0]-based byte write granularity, and PLL-synchronized timing for deterministic DDR capture.

Technical Context

The CY7C1513KV18-333BZI implements QDR II architecture with fully independent synchronous read and write ports sharing a multiplexed 20-bit address bus. Read and write operations are latched on alternate rising edges of the K clock, enabling true concurrency without bus turnaround.

It uses dual output clocks (C and C) plus echo clocks (CQ and CQ) to compensate for PCB flight-time skew, and integrates a PLL for precise data placement relative to clock edges. The device supports programmable drive strength and JTAG 1149.1 boundary scan for production testability.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1513KV18-333BZI, the -300BZI variant trades 66 MT/s bandwidth for lower power and improved timing margin, while the AS7C3256A lacks QDR II's concurrency, DDR, and echo clocking-making it unsuitable for high-speed networking or baseband use cases.

Availability

CY7C1513KV18-333BZI is available at Aetrix Electronics and suitable for packet buffer memory, baseband processing memory, and network processor cache applications requiring stable component supply across multi-year production cycles.

Supply support for CY7C1513KV18-333BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

The QDR® II SRAM product line targets high-bandwidth, low-latency memory subsystems in communications infrastructure-specifically engineered to eliminate bus turnaround and support deterministic DDR capture in FPGA- and ASIC-based datapaths.

FAQ

What is the function of the DOFF pin on CY7C1513KV18-333BZI?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle pipelined read latency for maximum throughput; when LOW, it reverts to 1-cycle latency matching QDR I behavior. This setting directly affects controller pipeline depth and must be fixed at power-up; it is not dynamically switchable during operation.

Can CY7C1513KV18-333BZI operate with 1.5 V I/O supply?

Yes, the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V nominal. Its HSTL Class I–compatible output drivers are designed for this range, and DC/AC electrical characteristics-including setup/hold times and output swing-are fully specified at 1.5 V. No configuration register or external resistor is needed to enable 1.5 V operation.

How does the CY7C1513KV18-333BZI handle concurrent read and write to the same address?

The device guarantees full data coherency: a read access returns the most recently written data, even if the write is still in progress within the same burst cycle. Internally, the write path is pipelined and self-timed, and the read path samples the memory array after write completion-ensuring reads always reflect the latest valid write without software intervention.

What is the purpose of the CQ and CQ echo clocks?

CQ and CQ are output-replica clocks synchronized to C and C, respectively, and routed alongside Q[17:0] signals. They allow the receiving controller to perform source-synchronous capture using the same clock edge that launched the data, eliminating need for board-level clock-data skew compensation. This is critical for reliable 666 MT/s DDR operation across temperature and voltage variations.