Cypress Semiconductor Corp CY7C1513KV18-333BZXC

Overview

CY7C1513KV18-333BZXC from Cypress Semiconductor is a 4M × 18, 72-Mbit QDR® II SRAM with four-word burst architecture, 333 MHz clock frequency, DDR interfaces on independent read/write ports (666 MHz data rate), and 1.8 V core / 1.4–1.8 V I/O supply. It delivers concurrent read-write transactions in high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the CY7C1513KV18-333BZXC datasheet, CY7C1513KV18-333BZXC pinout, CY7C1513KV18-333BZXC application, or CY7C1513KV18-333BZXC equivalent, key selection criteria include 333 MHz operation, 165-ball FBGA (13 × 15 × 1.4 mm), DOFF-controlled 1.5-cycle vs. 1-cycle read latency, echo clocks (CQ/CQ), and JTAG 1149.1 test access support.

Technical Context

The device implements true dual-port synchronous pipelined architecture with physically separate read and write data paths-no bus turnaround required. Address latching occurs on alternate rising edges of K/K clocks, enabling full concurrency between ports using a single multiplexed address bus.

It integrates a PLL for precise DDR timing alignment, supports depth expansion via RPS/WPS and BWS[1:0] controls, and uses echo clocks (CQ/CQ) to simplify source-synchronous data capture at 666 MHz. Internal self-timed writes ensure deterministic write completion without external handshaking.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L5 and IS61WV102418B, CY7C1513KV18-333BZXC uniquely delivers 333 MHz DDR dual-port performance with integrated echo clocks and programmable latency-enabling deterministic timing closure in 10G+ systems without external deskew components.

Availability

CY7C1513KV18-333BZXC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, and telecom line card applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7C1513KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

This device belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory subsystems in packet-switched infrastructure equipment.

FAQ

What is the function of the DOFF pin on CY7C1513KV18-333BZXC?

The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for improved timing margin in high-skew systems; when LOW, it enables 1-cycle latency for minimal access delay. This setting directly affects internal pipeline staging and must be held stable during operation.

Can CY7C1513KV18-333BZXC operate with only a single clock domain?

Yes - the device supports single-clock-mode operation where K/K drives all inputs and also clocks Q[17:0] outputs. In this mode, C/C pins are unused, but echo clocks (CQ/CQ) remain functional for source-synchronous capture. Full DDR performance requires dual-clock configuration.

How does the BWS[1:0] signal control write operations?

BWS[1:0] are active-low byte write enables: BWS0 controls D[8:0], BWS1 controls D[17:9]. When either is deasserted (HIGH), the corresponding 9-bit byte is masked and unchanged during the write cycle. This enables partial-word updates without read-modify-write sequences.

Is VREF required for proper operation of CY7C1513KV18-333BZXC?

Yes - VREF must be supplied externally at 0.75 × VDDQ (e.g., 1.05 V for VDDQ = 1.4 V) to set HSTL input thresholds. Omitting or misbiasing VREF causes incorrect sampling of RPS, WPS, BWS, and address inputs, leading to functional failure or metastability.