Cypress Semiconductor Corp CY7C1514AV18-250BZI
- Part No.:
- CY7C1514AV18-250BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1514AV18-250BZI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1514AV18-250BZI from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 1.8V core supply, and 250 MHz clock operation delivering 500 MT/s DDR throughput on both read and write ports. It features separate read/write data paths, 1.5-cycle read latency (DLL enabled), echo clocks (CQ/CQ), and HSTL I/O for high-speed networking buffers and packet memory in telecom switching systems.
For engineers reviewing the CY7C1514AV18-250BZI datasheet, CY7C1514AV18-250BZI pinout, CY7C1514AV18-250BZI application, or CY7C1514AV18-250BZI equivalent, key selection criteria include dual-clock DDR timing, DLL-controlled latency mode, byte-write select granularity (BWS[3:0]), FBGA-165 package compatibility, and QDR II–specific signal integrity requirements for >400 MHz system interfaces.
Technical Context
The CY7C1514AV18-250BZI implements a true dual-port synchronous architecture with physically independent read and write data buses (Q[35:0] and D[35:0]), eliminating bus turnaround overhead. Its internal 2M × 36 array is accessed via multiplexed address inputs (A[19:0]), latched alternately on rising edges of K/K for read/write operations.
It uses two dedicated output clock pairs - C/C for data capture and CQ/CQ as deskewed echo clocks - to compensate for flight-time mismatches across high-speed PCB traces. The DLL enables precise 1.5-cycle read latency alignment; disabling it via DOFF pin reverts behavior to QDR I mode with 1-cycle latency and reduced max frequency (167 MHz).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Max Clock Frequency | 250 MHz - defines maximum sustained transaction rate for concurrent read/write bursts |
| Data Rate | 500 MT/s - double-data-rate transfer on both ports enabled by K/K and C/C clocking |
| Read Latency | 1.5 cycles (DLL enabled) - determines minimum time from RPS assertion to first valid Q-word at C edge |
| Core Supply | VDD = 1.8 V ±0.1 V - powers internal logic and memory array; requires tight regulation for timing stability |
| I/O Supply | VDDQ = 1.4 V to 1.8 V - sets HSTL Class I output drive strength and input threshold reference |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - supports high-density routing and thermal dissipation in multi-chip modules |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm footprint, 1.4 mm height, RoHS-compliant lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Latched on rising edges of K/K; full 36-bit parallel write path with BWS[3:0] byte masking |
| Q[35:0] | Synchronous read data outputs | Driven on rising edges of C/C; tristated automatically when RPS is deasserted |
| K, K | Positive/negative input clocks | Capture all synchronous inputs (address, control, data); define write initiation timing |
| C, C | Positive/negative output clocks | Control Q[35:0] output timing; used with CQ/CQ to deskew data capture at controller |
| CQ, CQ | Echo clocks referenced to C/C | Free-running, phase-aligned copies of C/C; simplify source-synchronous data capture in FPGA/ASIC receivers |
| RPS, WPS | Read/Write Port Select | Active-low enables port access; asynchronous deassertion triggers automatic output tristate after completion |
| BWS[3:0] | Byte Write Selects | Independent 9-bit byte enables for D[35:0]; allow partial-word writes without read-modify-write overhead |
| ZQ | Output impedance calibration input | Connects to external 240 Ω resistor to ground to tune Q[35:0] and CQ/CQ driver impedance to 48 Ω |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Enables simultaneous 36-bit read and 36-bit write per cycle - no bus turnaround delay or arbitration logic required |
| 2-word burst architecture | Each access delivers two sequential 36-bit words on Q[35:0], matching typical packet header/payload segmentation |
| Delay Lock Loop (DLL) | Aligns internal data launch to C/C edges with sub-nanosecond jitter - essential for stable 500 MT/s operation |
| HSTL Class I I/O | Supports 1.4–1.8 V VDDQ with programmable drive strength - compatible with FPGA transceivers and ASIC memory controllers |
| JTAG 1149.1 test interface | Enables boundary-scan testing of interconnects in dense high-speed memory subsystems without additional probing |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches operating at 10 Gbps+ line rates. IC Role / Device Role / Timing Role: Dual-port SRAM serving as non-blocking buffer between ingress parser and egress scheduler, using RPS/WPS for independent flow control. Use Value: 500 MT/s DDR bandwidth and zero-turnaround architecture enable full line-rate buffering without pipeline stalls or external arbitration logic. | Use Scenario: Implementing distributed lookup tables and forwarding engines in modular chassis-based routers with multi-ASIC fabric interconnects. IC Role / Device Role / Timing Role: Shared memory resource accessed concurrently by multiple ASICs via depth-expanded banks using port-select signals (RPS/WPS). Use Value: Multiplexed A[19:0] and BWS[3:0] support efficient address/data sharing across 4+ devices while maintaining byte-level write granularity. |
| Telecom Baseband Processing | Test Equipment Pattern Memory |
Use Scenario: Real-time buffering of IQ samples between ADC/DAC interfaces and DSP cores in 5G massive MIMO radio units. IC Role / Device Role / Timing Role: Synchronous burst memory providing deterministic 1.5-cycle read latency for time-critical sample streaming under DLL control. Use Value: CQ/CQ echo clocks align sampled data edges precisely to FPGA receiver sampling points - reducing setup/hold margin requirements by ≥150 ps. | Use Scenario: Storing high-fidelity stimulus/response vectors in automated test equipment (ATE) for SoC validation at >200 MHz pattern rates. IC Role / Device Role / Timing Role: High-reliability memory with JTAG boundary scan and VREF-referenced HSTL I/O for repeatable signal integrity across temperature and voltage corners. Use Value: ZQ-calibrated 48 Ω output impedance ensures consistent waveform fidelity on 50 Ω test fixtures - critical for <1% eye diagram degradation at 500 MT/s. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-bit, 2M × 36, 10 ns access, 1.8V core, but uses single-ended LVDS I/O instead of HSTL; no echo clocks | Requires external differential termination and lacks CQ/CQ deskew capability - increases PCB routing complexity and timing closure effort | Select only if legacy LVDS controller compatibility is mandatory and echo clock simplification is not required |
| ISSI IS61WV204836BLL-15BLI | 2M × 36, 1.8V, but asynchronous SRAM with 15 ns access - no DDR, no DLL, no burst, no dual clocks | Cannot support concurrent read/write or 500 MT/s throughput; limited to low-latency microcontroller-based control plane buffers | Use only for cost-sensitive, non-pipelined applications where bandwidth <100 MB/s is acceptable |
Compared with IDT72T3615L10BG and IS61WV204836BLL-15BLI, CY7C1514AV18-250BZI uniquely delivers synchronized dual-clock DDR operation with echo clocks and DLL-controlled latency - enabling deterministic 500 MT/s performance in high-end networking and test equipment where timing predictability is non-negotiable.
Availability
CY7C1514AV18-250BZI is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and test equipment pattern memory requiring stable component supply and long-term lifecycle assurance.
Supply support for CY7C1514AV18-250BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.
The QDR® II SRAM product line targets high-bandwidth, low-latency memory subsystems in networking, telecom, and test equipment - emphasizing deterministic timing, concurrent access, and signal integrity at multi-GHz data rates.
FAQ
What is the function of the DOFF pin on CY7C1514AV18-250BZI?
The DOFF (DLL Turn Off) pin is an active-low input that disables the internal Delay Lock Loop. When tied LOW, the device operates in QDR I mode with 1-cycle read latency and reduced maximum frequency (167 MHz). For standard QDR II operation at 250 MHz with 1.5-cycle latency, DOFF must be pulled HIGH via ≤10 kΩ resistor to VDDQ.
How does the ZQ pin affect output impedance calibration?
The ZQ pin connects to an external 240 Ω resistor to ground to calibrate the output drivers (Q[35:0], CQ, CQ) to 48 Ω (0.2 × 240 Ω). This matches standard 50 Ω PCB traces and minimizes reflections. Connecting ZQ directly to VDDQ enables minimum-impedance mode (~30 Ω); leaving it unconnected or grounded violates specifications and risks signal integrity failure.
Can CY7C1514AV18-250BZI operate in single-clock mode?
Yes - by using only the K/K pair to drive both input registers and output registers (Q[35:0]), the device enters single-clock mode. In this configuration, C/C are unused, and timing references shift entirely to K/K. Read latency remains 1.5 cycles (DLL enabled), but echo clock functionality (CQ/CQ) is retained for data capture alignment.
What is the purpose of BWS[3:0] in CY7C1514AV18-250BZI?
BWS[3:0] are active-low byte write select signals controlling four independent 9-bit segments of the 36-bit D[35:0] bus. Each asserted BWS[x] enables writing to its corresponding 9-bit byte group; deassertion preserves existing memory contents in that segment. This eliminates need for read-modify-write cycles during partial-word updates in packet editing or header manipulation.
CY7C1514AV18-250BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1514AV18-250BZI FAQ
1.How can I place an order for CY7C1514AV18-250BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1514AV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1514AV18-250BZI reliable?
The price and inventory of CY7C1514AV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514AV18-250BZI is usually 5 days.
3.What payment methods are accepted for CY7C1514AV18-250BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1514AV18-250BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1514AV18-250BZI?
CY7C1514AV18-250BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1514AV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1514AV18-250BZI?
For technical support, including CY7C1514AV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514AV18-250BZI requirements.
6.How does Aetrix verify that CY7C1514AV18-250BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1514AV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514AV18-250BZI meets industry standards.
7.What is the process for return or replacement of CY7C1514AV18-250BZI?
All CY7C1514AV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514AV18-250BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1514AV18-250BZI part is unused and in its original packaging.
Return procedure for CY7C1514AV18-250BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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