Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C1514AV18-250BZI

Part No.:
CY7C1514AV18-250BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1514AV18-250BZI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,004

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1514AV18-250BZI from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 1.8V core supply, and 250 MHz clock operation delivering 500 MT/s DDR throughput on both read and write ports. It features separate read/write data paths, 1.5-cycle read latency (DLL enabled), echo clocks (CQ/CQ), and HSTL I/O for high-speed networking buffers and packet memory in telecom switching systems.

For engineers reviewing the CY7C1514AV18-250BZI datasheet, CY7C1514AV18-250BZI pinout, CY7C1514AV18-250BZI application, or CY7C1514AV18-250BZI equivalent, key selection criteria include dual-clock DDR timing, DLL-controlled latency mode, byte-write select granularity (BWS[3:0]), FBGA-165 package compatibility, and QDR II–specific signal integrity requirements for >400 MHz system interfaces.

Technical Context

The CY7C1514AV18-250BZI implements a true dual-port synchronous architecture with physically independent read and write data buses (Q[35:0] and D[35:0]), eliminating bus turnaround overhead. Its internal 2M × 36 array is accessed via multiplexed address inputs (A[19:0]), latched alternately on rising edges of K/K for read/write operations.

It uses two dedicated output clock pairs - C/C for data capture and CQ/CQ as deskewed echo clocks - to compensate for flight-time mismatches across high-speed PCB traces. The DLL enables precise 1.5-cycle read latency alignment; disabling it via DOFF pin reverts behavior to QDR I mode with 1-cycle latency and reduced max frequency (167 MHz).

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36 configuration)
Max Clock Frequency250 MHz - defines maximum sustained transaction rate for concurrent read/write bursts
Data Rate500 MT/s - double-data-rate transfer on both ports enabled by K/K and C/C clocking
Read Latency1.5 cycles (DLL enabled) - determines minimum time from RPS assertion to first valid Q-word at C edge
Core SupplyVDD = 1.8 V ±0.1 V - powers internal logic and memory array; requires tight regulation for timing stability
I/O SupplyVDDQ = 1.4 V to 1.8 V - sets HSTL Class I output drive strength and input threshold reference
Package165-ball FBGA (15 × 17 × 1.4 mm) - supports high-density routing and thermal dissipation in multi-chip modules

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm footprint, 1.4 mm height, RoHS-compliant lead-free finish.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputsLatched on rising edges of K/K; full 36-bit parallel write path with BWS[3:0] byte masking
Q[35:0]Synchronous read data outputsDriven on rising edges of C/C; tristated automatically when RPS is deasserted
K, KPositive/negative input clocksCapture all synchronous inputs (address, control, data); define write initiation timing
C, CPositive/negative output clocksControl Q[35:0] output timing; used with CQ/CQ to deskew data capture at controller
CQ, CQEcho clocks referenced to C/CFree-running, phase-aligned copies of C/C; simplify source-synchronous data capture in FPGA/ASIC receivers
RPS, WPSRead/Write Port SelectActive-low enables port access; asynchronous deassertion triggers automatic output tristate after completion
BWS[3:0]Byte Write SelectsIndependent 9-bit byte enables for D[35:0]; allow partial-word writes without read-modify-write overhead
ZQOutput impedance calibration inputConnects to external 240 Ω resistor to ground to tune Q[35:0] and CQ/CQ driver impedance to 48 Ω

Key Features

FeatureDesign Value
Separate read/write data portsEnables simultaneous 36-bit read and 36-bit write per cycle - no bus turnaround delay or arbitration logic required
2-word burst architectureEach access delivers two sequential 36-bit words on Q[35:0], matching typical packet header/payload segmentation
Delay Lock Loop (DLL)Aligns internal data launch to C/C edges with sub-nanosecond jitter - essential for stable 500 MT/s operation
HSTL Class I I/OSupports 1.4–1.8 V VDDQ with programmable drive strength - compatible with FPGA transceivers and ASIC memory controllers
JTAG 1149.1 test interfaceEnables boundary-scan testing of interconnects in dense high-speed memory subsystems without additional probing

Applications

High-Speed Packet BufferingNetwork Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches operating at 10 Gbps+ line rates.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as non-blocking buffer between ingress parser and egress scheduler, using RPS/WPS for independent flow control.

Use Value: 500 MT/s DDR bandwidth and zero-turnaround architecture enable full line-rate buffering without pipeline stalls or external arbitration logic.

Use Scenario: Implementing distributed lookup tables and forwarding engines in modular chassis-based routers with multi-ASIC fabric interconnects.

IC Role / Device Role / Timing Role: Shared memory resource accessed concurrently by multiple ASICs via depth-expanded banks using port-select signals (RPS/WPS).

Use Value: Multiplexed A[19:0] and BWS[3:0] support efficient address/data sharing across 4+ devices while maintaining byte-level write granularity.

Telecom Baseband ProcessingTest Equipment Pattern Memory

Use Scenario: Real-time buffering of IQ samples between ADC/DAC interfaces and DSP cores in 5G massive MIMO radio units.

IC Role / Device Role / Timing Role: Synchronous burst memory providing deterministic 1.5-cycle read latency for time-critical sample streaming under DLL control.

Use Value: CQ/CQ echo clocks align sampled data edges precisely to FPGA receiver sampling points - reducing setup/hold margin requirements by ≥150 ps.

Use Scenario: Storing high-fidelity stimulus/response vectors in automated test equipment (ATE) for SoC validation at >200 MHz pattern rates.

IC Role / Device Role / Timing Role: High-reliability memory with JTAG boundary scan and VREF-referenced HSTL I/O for repeatable signal integrity across temperature and voltage corners.

Use Value: ZQ-calibrated 48 Ω output impedance ensures consistent waveform fidelity on 50 Ω test fixtures - critical for <1% eye diagram degradation at 500 MT/s.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-bit, 2M × 36, 10 ns access, 1.8V core, but uses single-ended LVDS I/O instead of HSTL; no echo clocksRequires external differential termination and lacks CQ/CQ deskew capability - increases PCB routing complexity and timing closure effortSelect only if legacy LVDS controller compatibility is mandatory and echo clock simplification is not required
ISSI IS61WV204836BLL-15BLI2M × 36, 1.8V, but asynchronous SRAM with 15 ns access - no DDR, no DLL, no burst, no dual clocksCannot support concurrent read/write or 500 MT/s throughput; limited to low-latency microcontroller-based control plane buffersUse only for cost-sensitive, non-pipelined applications where bandwidth <100 MB/s is acceptable

Compared with IDT72T3615L10BG and IS61WV204836BLL-15BLI, CY7C1514AV18-250BZI uniquely delivers synchronized dual-clock DDR operation with echo clocks and DLL-controlled latency - enabling deterministic 500 MT/s performance in high-end networking and test equipment where timing predictability is non-negotiable.

Availability

CY7C1514AV18-250BZI is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and test equipment pattern memory requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1514AV18-250BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.

The QDR® II SRAM product line targets high-bandwidth, low-latency memory subsystems in networking, telecom, and test equipment - emphasizing deterministic timing, concurrent access, and signal integrity at multi-GHz data rates.

FAQ

What is the function of the DOFF pin on CY7C1514AV18-250BZI?

The DOFF (DLL Turn Off) pin is an active-low input that disables the internal Delay Lock Loop. When tied LOW, the device operates in QDR I mode with 1-cycle read latency and reduced maximum frequency (167 MHz). For standard QDR II operation at 250 MHz with 1.5-cycle latency, DOFF must be pulled HIGH via ≤10 kΩ resistor to VDDQ.

How does the ZQ pin affect output impedance calibration?

The ZQ pin connects to an external 240 Ω resistor to ground to calibrate the output drivers (Q[35:0], CQ, CQ) to 48 Ω (0.2 × 240 Ω). This matches standard 50 Ω PCB traces and minimizes reflections. Connecting ZQ directly to VDDQ enables minimum-impedance mode (~30 Ω); leaving it unconnected or grounded violates specifications and risks signal integrity failure.

Can CY7C1514AV18-250BZI operate in single-clock mode?

Yes - by using only the K/K pair to drive both input registers and output registers (Q[35:0]), the device enters single-clock mode. In this configuration, C/C are unused, and timing references shift entirely to K/K. Read latency remains 1.5 cycles (DLL enabled), but echo clock functionality (CQ/CQ) is retained for data capture alignment.

What is the purpose of BWS[3:0] in CY7C1514AV18-250BZI?

BWS[3:0] are active-low byte write select signals controlling four independent 9-bit segments of the 36-bit D[35:0] bus. Each asserted BWS[x] enables writing to its corresponding 9-bit byte group; deassertion preserves existing memory contents in that segment. This eliminates need for read-modify-write cycles during partial-word updates in packet editing or header manipulation.

CY7C1514AV18-250BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1514AV18-250BZI FAQ

1.How can I place an order for CY7C1514AV18-250BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1514AV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1514AV18-250BZI reliable?

The price and inventory of CY7C1514AV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514AV18-250BZI is usually 5 days.

3.What payment methods are accepted for CY7C1514AV18-250BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1514AV18-250BZI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1514AV18-250BZI?

CY7C1514AV18-250BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1514AV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1514AV18-250BZI?

For technical support, including CY7C1514AV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514AV18-250BZI requirements.

6.How does Aetrix verify that CY7C1514AV18-250BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1514AV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514AV18-250BZI meets industry standards.

7.What is the process for return or replacement of CY7C1514AV18-250BZI?

All CY7C1514AV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514AV18-250BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1514AV18-250BZI part is unused and in its original packaging.

Return procedure for CY7C1514AV18-250BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1514AV18-250BZI Tags

  • CY7C1514AV18-250BZI
  • CY7C1514AV18-250BZI PDF
  • CY7C1514AV18-250BZI Datasheet
  • CY7C1514AV18-250BZI Specifications
  • CY7C1514AV18-250BZI Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C1514AV18-250BZI
  • Buy CY7C1514AV18-250BZI
  • CY7C1514AV18-250BZI Price
  • CY7C1514AV18-250BZI Distributor
  • CY7C1514AV18-250BZI Supplier
  • CY7C1514AV18-250BZI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER