Cypress Semiconductor Corp CY7C1514KV18-250BZC
- Part No.:
- CY7C1514KV18-250BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1514KV18-250BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1514KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 1.8V core supply, and dual DDR interfaces supporting 350 MHz operation (700 MT/s data rate). It features separate read/write ports, 1.5-cycle read latency (DOFF = HIGH), echo clocks (CQ/CQ), and PLL-based timing control for high-bandwidth packet buffering in network line cards.
For engineers reviewing the CY7C1514KV18 datasheet, CY7C1514KV18 pinout, CY7C1514KV18 application, or CY7C1514KV18 equivalent, key selection criteria include x36 bus width, 165-ball FBGA package, 1.8V/1.4V dual-supply operation, QDR II burst architecture, and concurrent read/write capability without bus turnaround.
Technical Context
This SRAM implements true QDR II architecture with physically independent read and write data paths-no shared I/O pins-enabling simultaneous access to the same memory array. Its 2-word burst transfers occur on every rising edge of K/K and C/C clocks, achieving full-duplex 700 MT/s throughput at 350 MHz.
The device uses synchronous self-timed writes, supports depth expansion via RPS/WPS signals, and relies on a PLL to align echo clocks (CQ/CQ) with output data for reliable capture at system-level speeds. DOFF pin selects between 1.5-cycle (HIGH) and 1-cycle (LOW) read latency modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Max Clock Frequency | 350 MHz - enables 700 MT/s DDR data transfer on both ports |
| Read Latency | 1.5 cycles (DOFF = HIGH) - balances timing margin and throughput in high-speed systems |
| Core Supply Voltage | 1.8 V ±0.1 V - defines minimum power delivery stability requirement for internal logic |
| I/O Supply Voltage | 1.4 V to 1.8 V - supports HSTL-compatible signaling with adjustable drive strength |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory placement |
| Burst Length | 2-word fixed - ensures deterministic access time and simplifies controller FIFO design |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit parallel data sampled on rising edge of K clock; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit parallel output registered to C/C clocks; aligned with echo clocks CQ/CQ for source-synchronous capture |
| K / K | Input clock pair | Rising edges latch address and data; K used for read address, K for write address in dual-clock mode |
| C / C | Output clock pair | Control read data output register timing; minimize skew vs. Q outputs in high-speed PCB layout |
| CQ / CQ | Echo clock outputs | Source-synchronous clocks driven with Q data; simplify timing closure in FPGA/ASIC receivers |
| WPS | Write port select | Active-LOW signal enabling write transactions; deassertion blocks D[35:0] latching and write execution |
| RPS | Read port select | Active-LOW signal enabling read transactions; deassertion suppresses Q[35:0] output drivers |
| BWS[3:0] | Byte write select | Four active-LOW signals controlling 8-bit write enable per byte lane; enables partial-word updates without read-modify-write |
| DOFF | Read latency mode control | HIGH selects 1.5-cycle latency (higher timing margin); LOW selects 1-cycle latency (lower latency, tighter timing) |
| VDD / VDDQ | Power supplies | VDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O - requires separate filtering and decoupling networks |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Eliminates bus turnaround delay - enables true concurrent access for full-duplex traffic handling |
| 2-word burst + DDR interface | Delivers 72-bit data per clock cycle at 350 MHz → 25.2 Gb/s aggregate bandwidth (36 bits × 700 MT/s) |
| Echo clocks (CQ/CQ) | Provide source-synchronous timing reference for Q[35:0], reducing setup/hold margin requirements by >300 ps |
| Programmable read latency (DOFF) | Allows runtime optimization between latency-critical (1-cycle) and timing-margin-critical (1.5-cycle) system modes |
| Byte-selectable writes (BWS[3:0]) | Enables 8-bit granularity updates to 36-bit words - avoids full-word reads before writes in protocol processing |
Applications
| High-Speed Packet Buffering | Network Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet switch ASICs. IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level packet buffer with zero-turnaround concurrent read/write access. Use Value: Enables full-line-rate forwarding by sustaining 700 MT/s bidirectional throughput without arbitration stalls. | Use Scenario: Frame buffering in telecom base station radio units requiring low-latency memory access. IC Role / Device Role / Timing Role: High-bandwidth memory subsystem interfacing directly with FPGA-based MAC and PHY layers. Use Value: Echo clocks (CQ/CQ) reduce receiver timing uncertainty, allowing reliable capture at 350 MHz system clock. |
| Protocol Processing Engine | Multi-Core Processor Cache Coherency |
Use Scenario: Deep packet inspection engines performing real-time pattern matching across streaming data. IC Role / Device Role / Timing Role: Shared memory resource accessed simultaneously by multiple hardware accelerators for stateful inspection. Use Value: Byte write select (BWS[3:0]) permits selective update of match result fields without corrupting adjacent metadata. | Use Scenario: Directory-based cache coherency tracking in multi-core SoCs with distributed L3 caches. IC Role / Device Role / Timing Role: Synchronous SRAM storing tag/state entries with strict read-after-write ordering guarantees. Use Value: 1.5-cycle read latency (DOFF = HIGH) provides timing margin for complex coherency decision logic in critical path. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615 | 36-bit, 2M × 36, 333 MHz max, 1.5V core, no echo clocks | Lacks CQ/CQ outputs - requires external clock forwarding or tighter PCB routing constraints | Select when echo clock functionality is not required and lower power (1.5V core) is prioritized over timing margin |
| ISSI IS61WV102436B | 36-bit, 1M × 36, 200 MHz max, single-ended HSTL, no PLL | Half density and lower speed - suitable only for cost-sensitive, non-line-rate applications | Select for legacy designs where 200 MHz bandwidth suffices and board space allows larger package count |
Compared with IDT72T3615 and IS61WV102436B, CY7C1514KV18 delivers higher bandwidth (700 vs. 666/400 MT/s), superior timing robustness via echo clocks and PLL, and full 72-Mbit density in a single 165-ball FBGA - making it optimal for next-generation networking silicon integration.
Availability
CY7C1514KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network line card memory, protocol processing engines, and multi-core processor cache coherency applications requiring stable component supply and long-term industrial availability.
Supply support for CY7C1514KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, computing, and industrial systems.
CY7C1514KV18 belongs to the QDR® II SRAM product line, engineered specifically for ultra-low-latency, concurrent-access memory subsystems in packet-switched infrastructure equipment.
FAQ
What is the function of the DOFF pin on CY7C1514KV18?
The DOFF pin controls read latency mode: when asserted HIGH, it configures the device for 1.5-cycle read latency, providing additional timing margin for high-speed system interfaces; when LOW, it enables 1-cycle latency for minimal access delay. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.
Does CY7C1514KV18 support single-clock domain operation?
Yes - CY7C1514KV18 supports single-clock mode where K and C are tied together, and K and C are tied together. In this configuration, the device operates with simplified timing but retains full QDR II functionality including concurrent read/write and echo clocks, though CQ/CQ phase alignment is relative to the combined clock.
How does the BWS[3:0] signal enable partial writes in CY7C1514KV18?
BWS[3:0] are four active-LOW byte write enable signals that independently gate 8-bit lanes of the 36-bit D[35:0] bus. When a BWS bit is deasserted, its corresponding byte is ignored during the write cycle, preserving existing memory contents in those byte positions - eliminating need for read-modify-write sequences in protocol header updates.
What is the role of the echo clocks CQ and CQ in system timing?
CQ and CQ are source-synchronous output clocks driven with Q[35:0] data, matching the phase and skew characteristics of the data signals. They allow receiving devices (e.g., FPGAs) to latch Q outputs using the same clock edge that launched them, relaxing setup/hold timing requirements by up to 300 ps compared to using a system-generated clock.
CY7C1514KV18-250BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1514KV18-250BZC FAQ
1.How can I place an order for CY7C1514KV18-250BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1514KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1514KV18-250BZC reliable?
The price and inventory of CY7C1514KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514KV18-250BZC is usually 5 days.
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Once your CY7C1514KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1514KV18-250BZC?
For technical support, including CY7C1514KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514KV18-250BZC requirements.
6.How does Aetrix verify that CY7C1514KV18-250BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1514KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514KV18-250BZC meets industry standards.
7.What is the process for return or replacement of CY7C1514KV18-250BZC?
All CY7C1514KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514KV18-250BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1514KV18-250BZC part is unused and in its original packaging.
Return procedure for CY7C1514KV18-250BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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