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Cypress Semiconductor Corp CY7C1514KV18-250BZC

Part No.:
CY7C1514KV18-250BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1514KV18-250BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,352

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Product details

Overview

CY7C1514KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 1.8V core supply, and dual DDR interfaces supporting 350 MHz operation (700 MT/s data rate). It features separate read/write ports, 1.5-cycle read latency (DOFF = HIGH), echo clocks (CQ/CQ), and PLL-based timing control for high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1514KV18 datasheet, CY7C1514KV18 pinout, CY7C1514KV18 application, or CY7C1514KV18 equivalent, key selection criteria include x36 bus width, 165-ball FBGA package, 1.8V/1.4V dual-supply operation, QDR II burst architecture, and concurrent read/write capability without bus turnaround.

Technical Context

This SRAM implements true QDR II architecture with physically independent read and write data paths-no shared I/O pins-enabling simultaneous access to the same memory array. Its 2-word burst transfers occur on every rising edge of K/K and C/C clocks, achieving full-duplex 700 MT/s throughput at 350 MHz.

The device uses synchronous self-timed writes, supports depth expansion via RPS/WPS signals, and relies on a PLL to align echo clocks (CQ/CQ) with output data for reliable capture at system-level speeds. DOFF pin selects between 1.5-cycle (HIGH) and 1-cycle (LOW) read latency modes.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36 configuration)
Max Clock Frequency350 MHz - enables 700 MT/s DDR data transfer on both ports
Read Latency1.5 cycles (DOFF = HIGH) - balances timing margin and throughput in high-speed systems
Core Supply Voltage1.8 V ±0.1 V - defines minimum power delivery stability requirement for internal logic
I/O Supply Voltage1.4 V to 1.8 V - supports HSTL-compatible signaling with adjustable drive strength
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory placement
Burst Length2-word fixed - ensures deterministic access time and simplifies controller FIFO design

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data input36-bit parallel data sampled on rising edge of K clock; supports byte-selectable writes via BWS[3:0]
Q[35:0]Synchronous read data output36-bit parallel output registered to C/C clocks; aligned with echo clocks CQ/CQ for source-synchronous capture
K / KInput clock pairRising edges latch address and data; K used for read address, K for write address in dual-clock mode
C / COutput clock pairControl read data output register timing; minimize skew vs. Q outputs in high-speed PCB layout
CQ / CQEcho clock outputsSource-synchronous clocks driven with Q data; simplify timing closure in FPGA/ASIC receivers
WPSWrite port selectActive-LOW signal enabling write transactions; deassertion blocks D[35:0] latching and write execution
RPSRead port selectActive-LOW signal enabling read transactions; deassertion suppresses Q[35:0] output drivers
BWS[3:0]Byte write selectFour active-LOW signals controlling 8-bit write enable per byte lane; enables partial-word updates without read-modify-write
DOFFRead latency mode controlHIGH selects 1.5-cycle latency (higher timing margin); LOW selects 1-cycle latency (lower latency, tighter timing)
VDD / VDDQPower suppliesVDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O - requires separate filtering and decoupling networks

Key Features

FeatureDesign Value
Separate read/write data portsEliminates bus turnaround delay - enables true concurrent access for full-duplex traffic handling
2-word burst + DDR interfaceDelivers 72-bit data per clock cycle at 350 MHz → 25.2 Gb/s aggregate bandwidth (36 bits × 700 MT/s)
Echo clocks (CQ/CQ)Provide source-synchronous timing reference for Q[35:0], reducing setup/hold margin requirements by >300 ps
Programmable read latency (DOFF)Allows runtime optimization between latency-critical (1-cycle) and timing-margin-critical (1.5-cycle) system modes
Byte-selectable writes (BWS[3:0])Enables 8-bit granularity updates to 36-bit words - avoids full-word reads before writes in protocol processing

Applications

High-Speed Packet BufferingNetwork Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet switch ASICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level packet buffer with zero-turnaround concurrent read/write access.

Use Value: Enables full-line-rate forwarding by sustaining 700 MT/s bidirectional throughput without arbitration stalls.

Use Scenario: Frame buffering in telecom base station radio units requiring low-latency memory access.

IC Role / Device Role / Timing Role: High-bandwidth memory subsystem interfacing directly with FPGA-based MAC and PHY layers.

Use Value: Echo clocks (CQ/CQ) reduce receiver timing uncertainty, allowing reliable capture at 350 MHz system clock.

Protocol Processing EngineMulti-Core Processor Cache Coherency

Use Scenario: Deep packet inspection engines performing real-time pattern matching across streaming data.

IC Role / Device Role / Timing Role: Shared memory resource accessed simultaneously by multiple hardware accelerators for stateful inspection.

Use Value: Byte write select (BWS[3:0]) permits selective update of match result fields without corrupting adjacent metadata.

Use Scenario: Directory-based cache coherency tracking in multi-core SoCs with distributed L3 caches.

IC Role / Device Role / Timing Role: Synchronous SRAM storing tag/state entries with strict read-after-write ordering guarantees.

Use Value: 1.5-cycle read latency (DOFF = HIGH) provides timing margin for complex coherency decision logic in critical path.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T361536-bit, 2M × 36, 333 MHz max, 1.5V core, no echo clocksLacks CQ/CQ outputs - requires external clock forwarding or tighter PCB routing constraintsSelect when echo clock functionality is not required and lower power (1.5V core) is prioritized over timing margin
ISSI IS61WV102436B36-bit, 1M × 36, 200 MHz max, single-ended HSTL, no PLLHalf density and lower speed - suitable only for cost-sensitive, non-line-rate applicationsSelect for legacy designs where 200 MHz bandwidth suffices and board space allows larger package count

Compared with IDT72T3615 and IS61WV102436B, CY7C1514KV18 delivers higher bandwidth (700 vs. 666/400 MT/s), superior timing robustness via echo clocks and PLL, and full 72-Mbit density in a single 165-ball FBGA - making it optimal for next-generation networking silicon integration.

Availability

CY7C1514KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network line card memory, protocol processing engines, and multi-core processor cache coherency applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1514KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, computing, and industrial systems.

CY7C1514KV18 belongs to the QDR® II SRAM product line, engineered specifically for ultra-low-latency, concurrent-access memory subsystems in packet-switched infrastructure equipment.

FAQ

What is the function of the DOFF pin on CY7C1514KV18?

The DOFF pin controls read latency mode: when asserted HIGH, it configures the device for 1.5-cycle read latency, providing additional timing margin for high-speed system interfaces; when LOW, it enables 1-cycle latency for minimal access delay. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.

Does CY7C1514KV18 support single-clock domain operation?

Yes - CY7C1514KV18 supports single-clock mode where K and C are tied together, and K and C are tied together. In this configuration, the device operates with simplified timing but retains full QDR II functionality including concurrent read/write and echo clocks, though CQ/CQ phase alignment is relative to the combined clock.

How does the BWS[3:0] signal enable partial writes in CY7C1514KV18?

BWS[3:0] are four active-LOW byte write enable signals that independently gate 8-bit lanes of the 36-bit D[35:0] bus. When a BWS bit is deasserted, its corresponding byte is ignored during the write cycle, preserving existing memory contents in those byte positions - eliminating need for read-modify-write sequences in protocol header updates.

What is the role of the echo clocks CQ and CQ in system timing?

CQ and CQ are source-synchronous output clocks driven with Q[35:0] data, matching the phase and skew characteristics of the data signals. They allow receiving devices (e.g., FPGAs) to latch Q outputs using the same clock edge that launched them, relaxing setup/hold timing requirements by up to 300 ps compared to using a system-generated clock.

CY7C1514KV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1514KV18-250BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1514KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1514KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514KV18-250BZC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1514KV18-250BZC?

For technical support, including CY7C1514KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514KV18-250BZC requirements.

6.How does Aetrix verify that CY7C1514KV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1514KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514KV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1514KV18-250BZC?

All CY7C1514KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514KV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1514KV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1514KV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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