Cypress Semiconductor Corp CY7C1514KV18-333BZI

Overview

CY7C1514KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 333 MHz maximum operating frequency, 1.8V core supply, and 1.4–1.8V I/O supply. It implements separate read/write ports with DDR interfaces on both, 2-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.

For engineers reviewing the CY7C1514KV18 datasheet, CY7C1514KV18 pinout, CY7C1514KV18 application, or CY7C1514KV18 equivalent, key selection criteria include its 333 MHz clock support, 2M × 36 x18-bit-wide interface, FBGA-165 package, DOFF-controlled 1.5-cycle vs. 1-cycle read latency, and JTAG 1149.1 compliance for boundary scan testability.

Technical Context

This QDR II SRAM uses dual independent DDR clock domains: K/K for address/data input timing and C/C (or CQ/CQ) for output timing, enabling concurrent read/write operations without bus turnaround. Its synchronous self-timed write circuitry eliminates external write pulse control, while the PLL ensures precise data placement relative to echo clocks.

The device supports depth expansion via RPS/WPS port selects and byte-level write masking through four active-low BWS signals (BWS0–BWS3), each controlling a 9-bit segment of the 36-bit D[35:0] bus. Address latching occurs on alternate rising edges of K, supporting 20-bit addressing (A[19:0]) for the 2M-depth array.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with AS7C3256B-15JIN and IS61WV102432BLL-15BLI, CY7C1514KV18 delivers 2.25× higher density, DDR-enabled 700 MT/s throughput, and deterministic 1-cycle/1.5-cycle latency-critical for modern packet-processing pipelines where timing predictability and concurrent access are non-negotiable.

Availability

CY7C1514KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing in 4G/LTE infrastructure, and high-speed test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1514KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

CY7C1514KV18 belongs to the QDR® II SRAM product line, designed specifically for high-bandwidth, low-latency, concurrent-access memory subsystems in networking, telecommunications, and test instrumentation.

FAQ

What is the function of the DOFF pin on CY7C1514KV18?

The DOFF (Data Output OFFset) pin controls read latency mode: when asserted HIGH, it configures the device for 1.5-cycle read latency; when LOW, it enables 1-cycle latency. This setting affects internal pipeline staging and must be held stable during operation. It does not impact write timing or burst behavior, and no reconfiguration is possible mid-operation without resetting the device.

Can CY7C1514KV18 operate with only one clock domain (K = C)?

Yes - the device supports single-clock-domain operation by tying K to C and K to C, though this reduces timing margin and eliminates skew compensation benefits of echo clocks. In this mode, CQ/CQ outputs still reflect the same clock edges, but system-level timing closure becomes more sensitive to PCB trace length mismatches between clock and data nets.

How many address bits are used for the 2M × 36 configuration?

The CY7C1514KV18 uses 20 address bits (A[19:0]) to access its 2M-depth memory array. These are multiplexed onto a single address bus and latched on alternating rising edges of the K clock for read addresses and K clock for write addresses - no external address demultiplexing is required.

What is the purpose of the BWS[3:0] signals, and how do they map to D[35:0]?

BWS[3:0] are active-low byte write select signals: BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. Each enables writing to its corresponding 9-bit segment; deselected segments retain their prior stored values, eliminating need for read-modify-write cycles during partial updates.