Cypress Semiconductor Corp CY7C1514V18-167BZC
- Part No.:
- CY7C1514V18-167BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1514V18-167BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:576
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Product details
Overview
CY7C1514V18 from Cypress Semiconductor is a 72-Mbit QDR-II SRAM with 2M × 36 organization, 167 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It implements dual independent DDR read/write ports with echo clocks (CQ/CQ) and supports synchronous self-timed writes in high-bandwidth networking buffer applications.
For engineers reviewing the CY7C1514V18 datasheet, CY7C1514V18 pinout, CY7C1514V18 application, or CY7C1514V18 equivalent, this device is selected for low-latency, concurrent memory access in packet forwarding engines, FPGA co-processor buffers, and high-speed test equipment where bus turnaround elimination and deterministic burst timing are critical.
Technical Context
The CY7C1514V18 uses QDR-II architecture with physically separate read and write data paths, eliminating bus contention and enabling true simultaneous read/write operations. Its 2-word burst transfers 72 bits per cycle (36-bit × 2) on both ports, synchronized to rising edges of K/K (input) and C/C (output) clocks.
It integrates a Delay Lock Loop (DLL) for precise data placement, HSTL-compatible variable-drive outputs, JTAG 1149.1 test access, and four byte write selects (BWS[3:0]) for granular 8-bit write control across its 36-bit data width. Address inputs (A[19:0]) are multiplexed for both ports, reducing pin count while maintaining full 2M-depth addressing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 167 MHz - defines maximum sustained throughput of 12 Gbps (36-bit × 2 × 167 MHz) |
| Core Supply Voltage | 1.8 V ±0.1 V - powers internal logic and array; strict tolerance required for timing stability |
| I/O Supply Range | VDDQ = 1.4 V to 1.8 V - sets HSTL output drive strength and input threshold reference |
| Burst Length | 2-word - delivers two consecutive 36-bit words per access, minimizing address overhead |
| Data Interface | Double Data Rate (DDR) on both read and write ports - enables 334 MT/s effective data rate per port |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory placement |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | 36-bit parallel data sampled on rising edge of K clock; supports full-width or byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data outputs | 36-bit parallel data driven on rising edges of C/C clocks; tri-stated when RPS is deasserted |
| A[19:0] | Multiplexed address inputs | 20-bit address latched on alternating K (read) and K (write) edges; enables 2M-depth addressing with minimal pins |
| RPS / WPS | Read/Write Port Select | Active-low enables concurrent but independent port activation; critical for depth expansion and interleaved access |
| BWS[3:0] | Byte Write Selects | Four independent active-low controls for selective 8-bit write masking across 36-bit bus - avoids read-modify-write cycles |
| C / C, CQ / CQ | Output clocks & echo clocks | C/C deskew output timing; CQ/CQ provide board-level trace-matching references for reliable DDR capture at 334 MT/s |
| ZQ | Impedance calibration input | Connects to external resistor to ground to tune Q[35:0] and CQ/CQ output impedance to match 50 Ω system bus |
| DOFF | DLL disable control | Pulling low disables internal DLL - used only for specific timing margining; alters all output timing specs |
Key Features
| Feature | Design Value |
|---|---|
| Independent Read/Write Ports | Eliminates bus turnaround delays and arbitration logic - enables deterministic 1-cycle latency for back-to-back read+write |
| 2-Word DDR Burst Architecture | Delivers 72 bits per clock cycle (36 × 2) with no address re-latching - doubles effective bandwidth vs. single-word SRAMs |
| Echo Clocks (CQ/CQ) | Provide source-synchronous timing references aligned to Q[35:0] edges - simplifies PCB layout and reduces setup/hold violations |
| HSTL-Compatible I/O | Variable-drive outputs support 1.4–1.8 V VDDQ and interface directly with FPGA/HBAs using HSTL_18 or HSTL_I standards |
| JTAG 1149.1 Support | Enables boundary-scan testing and in-system verification without additional test fixtures or probe points |
Applications
| Packet Forwarding Engine | FPGA Co-Processor Buffer |
|---|---|
Use Scenario: High-speed line cards in enterprise routers performing real-time packet classification and forwarding at 10+ Gbps. IC Role / Device Role / Timing Role: Dual-port SRAM acts as deep ingress/egress packet buffer with zero-turnaround read/write - stores header metadata and payload fragments concurrently. Use Value: Enables full-duplex 334 MT/s data flow per port, sustaining 12 Gbps aggregate bandwidth without pipeline stalls or arbitration delay. |
Use Scenario: Offloading compute-intensive tasks (e.g., FFT, filtering) from FPGA fabric using tightly coupled memory. IC Role / Device Role / Timing Role: Provides low-latency, deterministic-access scratchpad memory for streaming data between FPGA logic blocks and external interfaces. Use Value: Synchronous self-timed writes and echo-clock–assisted reads reduce timing closure effort and eliminate metastability risk in multi-clock-domain systems. |
| High-Speed Test Equipment | Optical Transport Network (OTN) Framer |
Use Scenario: Bit-error-rate testers (BERTs) capturing multi-gigabit serial streams for jitter and eye-diagram analysis. IC Role / Device Role / Timing Role: Captures parallelized 36-bit samples from deserializers at 167 MHz while simultaneously feeding pattern generators - no shared bus contention. Use Value: 2M × 36 depth provides >134 Mbyte capture buffer; DDR burst mode ensures continuous streaming without gaps during acquisition. |
Use Scenario: OTN framer ASICs buffering STS-192/OC-192 payloads before mapping into OPU2/OPU3 containers. IC Role / Device Role / Timing Role: Stores incoming SONET/SDH frames and aligns them to fixed-size OTN containers using independent read/write pointers. Use Value: Separate RPS/WPS allows atomic frame write + container read operations - prevents corruption during pointer wrap or rate adaptation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36150L10BG | 36-Mbit (1M × 36), 100 MHz max, 3.3 V core, LVDS I/O | Limited density and speed; requires level-shifting for 1.8 V systems | Select only if legacy 3.3 V infrastructure or LVDS signaling is mandatory |
| ISSI IS61WV102436B | 36-Mbit (1M × 36), asynchronous interface, no DDR or echo clocks | No concurrent read/write; higher latency and lower peak bandwidth | Use only for cost-sensitive, non-real-time buffering where QDR-II features are unnecessary |
Compared with IDT72T36150L10BG and ISSI IS61WV102436B, the CY7C1514V18 delivers double the density and 67% higher bandwidth with deterministic DDR timing - essential for real-time packet processing and streaming applications requiring zero bus turnaround.
Availability
CY7C1514V18 is available at Aetrix Electronics and suitable for high-speed networking equipment, FPGA-based prototyping platforms, optical transport systems, and automated test equipment requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1514V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
The QDR-II SRAM product line targets applications demanding ultra-low latency, concurrent memory access, and deterministic timing - specifically engineered for network processors, packet buffers, and high-speed test instrumentation.
FAQ
What is the minimum VDDQ voltage supported by CY7C1514V18?
The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed and may cause HSTL output drive failure or input threshold violation. The 1.4 V lower limit ensures proper termination matching and signal integrity for DDR interfaces at 167 MHz.
Can CY7C1514V18 operate without the DLL enabled?
Yes - pulling DOFF low disables the internal DLL. However, all AC timing parameters change significantly: tAC increases by up to 1.2 ns, and CQ/CQ phase alignment to C/C degrades. This mode is only recommended for marginal timing validation, not production use.
How many address bits are required for CY7C1514V18's 2M × 36 configuration?
20 address bits (A[19:0]) are required. The device internally organizes memory as two 1M × 36 arrays; A[19] selects the array, and A[18:0] addresses within each array. All addresses are multiplexed across read and write ports using K and K clocks.
Is ZQ pin mandatory for operation?
Yes - ZQ must be connected either to an external resistor to ground (for impedance tuning) or directly to VDDQ (for minimum output drive). Leaving ZQ floating or connecting it to GND violates the absolute maximum ratings and risks output driver damage or undefined timing behavior.
CY7C1514V18-167BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1514V18-167BZC FAQ
1.How can I place an order for CY7C1514V18-167BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1514V18-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1514V18-167BZC reliable?
The price and inventory of CY7C1514V18-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514V18-167BZC is usually 5 days.
3.What payment methods are accepted for CY7C1514V18-167BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1514V18-167BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1514V18-167BZC?
CY7C1514V18-167BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1514V18-167BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1514V18-167BZC?
For technical support, including CY7C1514V18-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514V18-167BZC requirements.
6.How does Aetrix verify that CY7C1514V18-167BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1514V18-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514V18-167BZC meets industry standards.
7.What is the process for return or replacement of CY7C1514V18-167BZC?
All CY7C1514V18-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514V18-167BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1514V18-167BZC part is unused and in its original packaging.
Return procedure for CY7C1514V18-167BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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