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Cypress Semiconductor Corp CY7C1514V18-167BZXC

Part No.:
CY7C1514V18-167BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1514V18-167BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,413

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Product details

Overview

CY7C1514V18 from Cypress Semiconductor is a 72-Mbit QDR-II SRAM with 2M × 36 organization, 167 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It implements separate read/write ports with DDR interfaces on both, 2-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking packet buffers and baseband processing.

For engineers reviewing the CY7C1514V18 datasheet, CY7C1514V18 pinout, CY7C1514V18 application, or CY7C1514V18 equivalent, this device supports concurrent read/write operations without bus turnaround, delivers 12 Gbps peak bandwidth at 167 MHz, and requires precise timing alignment of K/K and C/C clock pairs for reliable DDR data transfer in synchronous memory subsystems.

Technical Context

The CY7C1514V18 uses QDR-II architecture with fully independent read and write ports sharing a multiplexed 20-bit address bus (A[19:0]), enabling simultaneous access to the same or different memory locations. Each port operates synchronously with dedicated input registers (K/K for writes, K/K for reads) and output registers (C/C for reads).

It features a Delay Lock Loop (DLL) for accurate data placement, HSTL-compatible variable-drive output buffers, JTAG 1149.1 test access, and four byte write selects (BWS[3:0]) enabling granular 8-bit write control across its 36-bit data width - critical for partial-word updates in telecom buffer applications.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density72 Mbit (2M × 36 organization)
Max Clock Frequency167 MHz - sets maximum sustained throughput of 12 Gbps (36 bits × 167 MHz × 2 transfers/cycle)
Core Supply Voltage1.8 V ±0.1 V - defines minimum power rail stability requirement for internal logic and array operation
I/O Supply RangeVDDQ = 1.4 V to 1.8 V - enables compatibility with 1.5 V or 1.8 V HSTL-18 signaling systems
Burst Length2-word burst per access - delivers two consecutive 36-bit words per clock cycle, eliminating need for address incrementing
Write Select GranularityFour independent BWS[3:0] signals - allows selective 8-bit byte writes within 36-bit word, preserving unselected bytes
Package165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-density PCB layout in telecom line cards

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[35:0]Synchronous write data inputs36-bit parallel data sampled on rising edge of K clock; full-width write path for burst-aligned ingress
Q[35:0]Synchronous read data outputs36-bit parallel data driven on rising edges of C/C clocks; supports echo-clock–based capture in high-speed SerDes interfaces
A[19:0]Multiplexed address inputs20-bit shared address bus latched alternately on K (read) and K (write) rising edges - reduces pin count vs. dual-bus architecture
K, KPositive/negative input clocksRising edges initiate all synchronous inputs (address, data, controls); K/K pair enables precise DDR timing margin control
C, CPositive/negative output clocksDrive Q[35:0] outputs; used with CQ/CQ to deskew flight time mismatches across multi-device memory banks
CQ, CQEcho clocks referenced to C/CFree-running copies synchronized to C/C; simplify receiver-side data capture by matching clock-to-Q delay
BWS[3:0]Byte write select inputsFour active-low signals controlling 8-bit write enable per byte lane - enables partial-word updates without read-modify-write overhead
RPS, WPSRead/Write port selectActive-low enables independent activation of read or write port; deselection tri-states Q[35:0] or ignores D[35:0]
ZQOutput impedance calibrationConnect to external resistor to ground to tune Q[35:0]/CQ/CQ drive strength to match 50 Ω system trace impedance
DOFFDLL disable controlActive-low disables internal Delay Lock Loop; used only when DLL-induced jitter exceeds system tolerance

Key Features

Feature Design Value
Separate read/write portsEliminates bus turnaround latency and contention - enables true concurrent access for packet buffering in switch fabric ASICs
DDR interfaces on both portsDelivers 2× data rate per clock edge - achieves 12 Gbps bandwidth at 167 MHz without requiring >333 MHz signal routing
Echo clocks (CQ/CQ)Match clock-to-Q delay of C/C - enables source-synchronous capture at FPGA or ASIC receiver with <100 ps skew budget
HSTL-compatible I/OSupports 1.5 V or 1.8 V HSTL-18 signaling - interoperable with Stratix IV, Virtex-6, and similar high-speed FPGA memory controllers
JTAG 1149.1 complianceEnables boundary-scan testing of memory interconnects - critical for validation of dense FBGA routing in 10G+ line cards

Applications

Networking Packet Buffer Baseband Signal Processing

Use Scenario: Temporary storage of variable-length Ethernet/IP packets in Layer 2/L3 switches before forwarding or classification.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfacing directly to switch fabric ASIC via QDR-II protocol.

Use Value: Concurrent read/write eliminates arbitration stalls, enabling full-line-rate 10G/40G packet buffering with deterministic 2-cycle access latency.

Use Scenario: Real-time storage of FFT output bins and channel estimation coefficients in LTE eNodeB baseband units.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ping-pong buffer between DSP cores and RF front-end processors.

Use Value: 2M × 36 depth supports 2048-point FFT coefficient storage; 167 MHz clock aligns with 122.88 MHz LTE sampling clock × 1.36x margin.

Telecom Line Card Memory High-Speed Test Equipment

Use Scenario: Frame buffering in OTN (Optical Transport Network) mapper/demapper modules handling OC-192/STM-64 traffic.

IC Role / Device Role / Timing Role: Synchronous pipelined memory providing seamless 64B-aligned data staging between framer and SERDES PHY layers.

Use Value: BWS[3:0] enables byte-granular insertion of overhead bytes into OTU frames without full-word rewrite cycles.

Use Scenario: Pattern generation and response capture in automated test equipment for high-speed serial interface validation (e.g., PCIe Gen3, SATA III).

IC Role / Device Role / Timing Role: Deterministic latency memory for stimulus waveform storage and expected response lookup table.

Use Value: DLL-controlled timing ensures sub-200 ps jitter on Q[35:0], meeting setup/hold requirements of 8 Gbps pattern generators.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256A-167BIN256K × 36, 3.3 V core/I/O, 167 MHz, no echo clocks or DLLLacks CQ/CQ and DLL - requires external clock deskew; limited to lower-speed test equipment or legacy backplanesSelect when cost sensitivity outweighs timing precision needs and system clock distribution already handles skew compensation.
IS61WV204836BLL-167TQLI2M × 36, 3.3 V, 167 MHz, single-port with bidirectional data busNo concurrent read/write - introduces bus turnaround latency; unsuitable for real-time packet bufferingChoose only for non-concurrent applications where memory density matches but bandwidth demand is ≤6 Gbps.

Compared with AS7C3256A-167BIN and IS61WV204836BLL-167TQLI, the CY7C1514V18 uniquely delivers true concurrent access, echo-clock–assisted capture, and DLL-based timing accuracy - making it the only viable choice for 10G+ packet buffer and LTE baseband applications requiring sub-nanosecond timing control.

Availability

CY7C1514V18 is available at Aetrix Electronics and suitable for networking packet buffers, telecom line card memory, baseband signal processing, and high-speed test equipment requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1514V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with headquarters in San Jose, CA.

The QDR-II SRAM product line targets high-throughput, low-latency memory subsystems in networking infrastructure and wireless base stations - specifically engineered to replace asynchronous SRAMs and reduce system-level timing complexity.

FAQ

What is the function of the ZQ pin on CY7C1514V18?

The ZQ pin calibrates the output driver impedance of Q[35:0], CQ, and CQ to match the system data bus. It must be connected to a precision 240 Ω resistor to ground (setting 48 Ω nominal output impedance) or tied directly to VDDQ for minimum impedance mode. Leaving ZQ floating or connecting it to VSS violates the absolute maximum ratings and may cause output instability.

Can CY7C1514V18 operate in single-clock mode?

Yes - when C and C are tied to K and K respectively, the device enters single-clock mode. In this configuration, read data is clocked out on K/K instead of C/C, and CQ/CQ are generated relative to K/K. All timing parameters shift accordingly, and the DLL remains active unless disabled via DOFF. This mode simplifies clock routing but sacrifices deskew capability.

How does the BWS[3:0] functionality differ between CY7C1514V18 and CY7C1512V18?

In CY7C1514V18, BWS[3:0] independently controls four 8-bit lanes across the full 36-bit width: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. CY7C1512V18 uses only BWS[1:0] for its 18-bit interface (BWS0 → D[8:0], BWS1 → D[17:9]). The extra BWS lines in CY7C1514V18 enable finer-grained partial writes required in 100G Ethernet frame header manipulation.

Is the DOFF pin required to be actively driven in normal operation?

No - DOFF should be left unconnected or pulled HIGH (via 10 kΩ to VDDQ) during normal operation to keep the internal DLL enabled. Only assert DOFF LOW when system-level jitter analysis confirms that DLL-induced phase noise degrades timing margins below acceptable limits - typically in ultra-low-jitter test setups where external clock conditioning is available.

CY7C1514V18-167BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1514V18-167BZXC FAQ

1.How can I place an order for CY7C1514V18-167BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1514V18-167BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1514V18-167BZXC reliable?

The price and inventory of CY7C1514V18-167BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514V18-167BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1514V18-167BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1514V18-167BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1514V18-167BZXC?

CY7C1514V18-167BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1514V18-167BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1514V18-167BZXC?

For technical support, including CY7C1514V18-167BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514V18-167BZXC requirements.

6.How does Aetrix verify that CY7C1514V18-167BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1514V18-167BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514V18-167BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1514V18-167BZXC?

All CY7C1514V18-167BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514V18-167BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1514V18-167BZXC part is unused and in its original packaging.

Return procedure for CY7C1514V18-167BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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