Cypress Semiconductor Corp CY7C1514V18-200BZXC

Overview

CY7C1514V18 from Cypress Semiconductor is a 72-Mbit QDR-II SRAM with 2M × 36 organization, dual independent read/write ports, 200 MHz clock operation (500 MT/s DDR), and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1514V18 datasheet, CY7C1514V18 pinout, CY7C1514V18 application, or CY7C1514V18 equivalent, key selection criteria include burst depth (2-word), HSTL I/O compatibility (VDDQ = 1.4–1.8 V), DLL-assisted timing alignment, echo clock support (CQ/CQ), and byte write select granularity (BWS[3:0]).

Technical Context

The CY7C1514V18 implements QDR-II architecture with physically separate read and write data paths-no bus turnaround required. Its 20-bit address bus latches both read and write addresses on alternating rising edges of K/K clocks, enabling full port independence.

It uses double-data-rate interfaces on both ports: data transfers occur on every rising edge of K/K (write) and C/C (read), achieving 500 MT/s at 250 MHz nominal or 400 MT/s at 200 MHz. The integrated Delay Lock Loop (DLL) aligns CQ/CQ echo clocks to output data edges for reliable capture in high-speed systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free compatible.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10BG and AS7C362000B-200BIN, the CY7C1514V18 provides optimal balance of proven 200 MHz reliability, echo-clock simplicity, and Cypress's long-term supply commitment for telecom infrastructure - making it preferred for volume deployments where design-in stability outweighs marginal speed gains.

Availability

CY7C1514V18 is available at Aetrix Electronics and suitable for telecom infrastructure, high-speed networking equipment, and baseband processing systems requiring stable component supply across extended product lifecycles.

Supply support for CY7C1514V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets.

The QDR-II SRAM product line targets high-bandwidth, low-latency memory subsystems in networking ASICs and FPGA-based datapaths - emphasizing deterministic timing, concurrent access, and signal integrity at multi-Gbps rates.

FAQ

What is the minimum VDDQ voltage supported for CY7C1514V18 operation?

The device supports VDDQ from 1.4 V to 1.8 V. At 1.4 V, HSTL output drive strength is reduced by ~30% versus 1.8 V, increasing rise/fall times by up to 150 ps - acceptable for shorter traces (<30 mm) but requires validation against receiver AC specs at system level.

Can CY7C1514V18 operate without connecting the ZQ pin?

No. ZQ must be connected either to a 240 Ω resistor to ground for impedance calibration or directly to VDDQ for minimum-drive mode. Leaving ZQ floating or tied to GND violates Absolute Maximum Ratings and may cause output overshoot or timing violations under load.

How does the DOFF pin affect timing parameters?

When DOFF is pulled low, the internal DLL is disabled, causing CQ/CQ to become free-running replicas of C/C with ±250 ps phase error. All tAC, tCO, and tHZ values shift outside datasheet limits - system-level timing closure requires re-characterization and derating of setup/hold margins.

Is the 165-ball FBGA package compatible with standard reflow profiles?

Yes. The package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports peak reflow temperatures up to 260 °C for ≤60 seconds. Recommended profile includes ramp-to-peak ≤3 °C/s, time above 217 °C = 60–150 s, and cooling rate ≤6 °C/s to prevent solder voiding or die cracking.