Cypress Semiconductor Corp CY7C1514V18-250BZI
- Part No.:
- CY7C1514V18-250BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1514V18-250BZI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1514V18 from Cypress Semiconductor is a 72-Mbit QDR-II SRAM with 2M × 36 organization, 250 MHz clock operation, DDR interfaces on independent read/write ports, and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers 500 MT/s data transfer rate per port and supports concurrent read/write transactions in high-bandwidth networking and packet buffering applications.
For engineers reviewing the CY7C1514V18 datasheet, CY7C1514V18 pinout, CY7C1514V18 application, or CY7C1514V18 equivalent, key selection criteria include its dual-clock DDR timing architecture, 36-bit burst width, HSTL I/O compatibility, DLL-based data alignment, and depth-expansion support via BWS[3:0] and port-select controls.
Technical Context
The CY7C1514V18 implements a synchronous pipelined QDR-II architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its 20-bit address bus accesses a 1M × 36 memory array per internal bank (dual-bank configuration), with address latching on alternating rising edges of K/K clocks.
It uses four independent clock domains: K/K for write/control inputs, C/C for read outputs, plus echo clocks CQ/CQ referenced to C/C for source-synchronous data capture. The integrated Delay Lock Loop (DLL) aligns Q[35:0] output timing to C/C edges within ±50 ps jitter, enabling reliable 500 MHz DDR operation at 250 MHz clock frequency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Maximum Clock Frequency | 250 MHz - enables 500 MT/s DDR throughput per port |
| Data Bus Width | 36-bit bidirectional I/O - supports two 18-bit words per burst cycle |
| Core Supply Voltage | VDD = 1.8 V ±0.1 V - defines logic threshold and power consumption baseline |
| I/O Supply Voltage | VDDQ = 1.4 V to 1.8 V - sets HSTL Class I output drive strength and termination reference |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - provides 0.8 mm ball pitch and thermal performance for high-speed routing |
| Timing Architecture | Separate K/K and C/C clock pairs - eliminates skew between control and data paths in multi-device systems |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | Latched on rising edge of K/K; 36-bit parallel input path for burst writes |
| Q[35:0] | Synchronous read data output | Driven on rising edge of C/C; tri-stated when RPS inactive |
| A[19:0] | Multiplexed address input | 20-bit bus latched alternately for read/write addresses using K/K edges |
| RPS, WPS | Port enable controls | Active-low synchronous selects for independent read/write port activation |
| BWS[3:0] | Byte write select | Four active-low signals controlling 9-bit byte segments (D[8:0], D[17:9], D[26:18], D[35:27]) |
| K, K | Write/control clock pair | Positive/negative differential clocks for all write and control signal sampling |
| C, C | Read data clock pair | Positive/negative differential clocks driving Q[35:0] and synchronizing echo clocks |
| CQ, CQ | Echo clocks | Free-running copies of C/C, used by controller for source-synchronous data capture |
| ZQ | Output impedance calibration | Connects to external resistor to ground to tune Q[35:0]/CQ/CQ output driver impedance to 0.2×RQ |
| DOFF | DLL disable control | Active-low signal disabling internal Delay Lock Loop - alters output timing margins |
| VDD, VDDQ, VSS | Power/ground rails | VDD = 1.8 V core supply; VDDQ = 1.4–1.8 V I/O supply; VSS = common ground reference |
| TCK/TMS/TDI/TDO | JTAG test interface | IEEE 1149.1 compliant boundary scan access for production testing and debug |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Enables true concurrent access without bus turnaround delay or arbitration logic |
| 2-word burst architecture | Delivers two 18-bit words per clock cycle - matches typical packet header + payload granularity |
| HSTL Class I compatible I/O | Supports 1.4–1.8 V VDDQ operation with programmable drive strength for signal integrity optimization |
| Integrated Delay Lock Loop (DLL) | Aligns Q[35:0] output edges to C/C clocks within ±50 ps, enabling stable 500 MT/s operation |
| Byte-level write masking | BWS[3:0] allows selective updating of 9-bit segments - preserves unmodified data during partial writes |
| Source-synchronous echo clocks | CQ/CQ provide controller-referenced timing references to eliminate board trace skew effects |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches before forwarding decisions. IC Role / Device Role / Timing Role: Dual-port SRAM acting as non-blocking buffer with simultaneous read (forwarding engine) and write (ingress pipeline) access. Use Value: 250 MHz clock + DDR yields 36 Gb/s aggregate bandwidth - sufficient for 10G Ethernet line-rate buffering with zero contention. | Use Scenario: Interconnecting multiple ASICs in modular chassis-based switches via shared memory fabric. IC Role / Device Role / Timing Role: Shared memory node providing low-latency, deterministic access for distributed lookup and queuing engines. Use Value: Independent RPS/WPS and BWS[3:0] allow fine-grained memory allocation across multiple traffic classes without software intervention. |
| Telecom Line Card Buffering | High-Performance Test Equipment Memory |
Use Scenario: Temporary storage of framed TDM or OTN data streams during protocol conversion and grooming. IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing directly with SerDes PHYs via HSTL I/O and echo-clock–based capture. Use Value: CQ/CQ echo clocks simplify timing closure at 500 MT/s - reduces FPGA logic required for deskew and alignment. | Use Scenario: Real-time waveform capture and pattern generation in automated test systems requiring deterministic latency. IC Role / Device Role / Timing Role: High-throughput memory buffer synchronized to instrument clock domain using K/K and C/C clock separation. Use Value: DLL-aligned outputs ensure sub-cycle timing repeatability - critical for <1 ns jitter requirements in ATE digital I/O subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit (1M × 36), 166 MHz max clock, LVDS I/O, no echo clocks | Limited to 332 MT/s; requires external deskew circuitry; lower power but lower bandwidth | Select when system clock < 200 MHz and LVDS interface preferred over HSTL |
| ISSI IS61WV102436B | 36-Mbit (1M × 36), asynchronous interface, single-port, 15 ns access | No concurrent read/write; no DDR or DLL; simpler timing but 10× lower bandwidth than CY7C1514V18 | Select only for cost-sensitive, non-pipelined control-plane buffers where bandwidth < 1 Gb/s suffices |
Compared with IDT72T3615L10BG and IS61WV102436B, the CY7C1514V18 uniquely delivers 72-Mbit density with 500 MT/s DDR throughput, echo-clock–assisted capture, and DLL-based timing precision - making it the only viable choice for 10G+ packet processing pipelines requiring deterministic sub-nanosecond timing alignment.
Availability
CY7C1514V18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom line card buffering, and high-performance test equipment requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1514V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
The QDR-II SRAM product line targets high-bandwidth, low-latency memory subsystems in networking and test equipment, emphasizing concurrent access, source-synchronous timing, and scalable density for packet-forwarding architectures.
FAQ
What is the minimum VDDQ voltage supported by CY7C1514V18?
The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V violates HSTL Class I specifications and risks output driver malfunction or timing violations. At 1.4 V, output drive strength is reduced by ~30% versus 1.8 V, requiring careful PCB trace impedance matching.
Can CY7C1514V18 operate in single-clock mode?
Yes - when C and C are tied to K and K respectively, the device operates in single-clock mode. In this mode, Q[35:0] is clocked by K/K instead of C/C, and CQ/CQ are generated relative to K/K. Output timing parameters shift accordingly, and DLL behavior remains active unless DOFF is asserted.
How does ZQ pin calibration affect signal integrity?
ZQ connects to an external resistor (typically 100 Ω) to ground, calibrating output driver impedance to 0.2×RQ = 20 Ω. This matches standard 50 Ω transmission lines with proper series termination, reducing reflections and improving eye diagram margin at 500 MT/s. Leaving ZQ unconnected or shorted to GND disables calibration and degrades timing margins.
Is JTAG boundary scan functional with DLL disabled via DOFF?
Yes - JTAG operation (TCK/TMS/TDI/TDO) remains fully functional regardless of DOFF state. Boundary scan logic resides outside the DLL domain and operates independently of clock alignment circuits. However, disabling DLL alters output timing windows, so scan test vectors must account for increased setup/hold uncertainty on Q[35:0].
CY7C1514V18-250BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1514V18-250BZI FAQ
1.How can I place an order for CY7C1514V18-250BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1514V18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1514V18-250BZI reliable?
The price and inventory of CY7C1514V18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514V18-250BZI is usually 5 days.
3.What payment methods are accepted for CY7C1514V18-250BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1514V18-250BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1514V18-250BZI?
CY7C1514V18-250BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1514V18-250BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1514V18-250BZI?
For technical support, including CY7C1514V18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514V18-250BZI requirements.
6.How does Aetrix verify that CY7C1514V18-250BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1514V18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514V18-250BZI meets industry standards.
7.What is the process for return or replacement of CY7C1514V18-250BZI?
All CY7C1514V18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514V18-250BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1514V18-250BZI part is unused and in its original packaging.
Return procedure for CY7C1514V18-250BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1514V18-250BZI Tags

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