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Cypress Semiconductor Corp CY7C1515JV18-167BZI

Part No.:
CY7C1515JV18-167BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1515JV18-167BZI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:202

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Product details

Overview

CY7C1515JV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 167 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), 1.4–1.8 V I/O supply (VDDQ), and 165-ball FBGA (15 × 17 × 1.4 mm) package. It delivers concurrent read/write operations via independent ports, 4-word burst transfers, and DDR interfaces on both ports for high-throughput packet buffering in network line cards.

For engineers reviewing the CY7C1515JV18 datasheet, CY7C1515JV18 pinout, CY7C1515JV18 application, or CY7C1515JV18 equivalent, key selection considerations include its dual-clock DDR timing architecture, DLL-enabled 1.5-cycle read latency, HSTL-compatible I/Os, and depth-expansion support via RPS/WPS and BWS[3:0] controls.

Technical Context

The CY7C1515JV18 implements a synchronous pipelined QDR II architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its 2M × 36 memory array is internally organized as four 512K × 36 banks, accessed via a shared 19-bit address bus latched on alternating edges of K/K clocks.

All synchronous inputs (RPS, WPS, BWS[3:0], A[18:0], D[35:0]) are registered to K/K rising edges; all outputs (Q[35:0], CQ/CQ) are edge-aligned to C/C clocks. The integrated Delay Lock Loop (DLL) enables precise 1.5-cycle read latency at 167 MHz, while DOFF pin control allows fallback to QDR I mode (1-cycle latency) when disabled.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 configuration)
Max Operating Frequency 167 MHz - defines maximum sustained clock rate for full QDR II timing compliance
Read Latency 1.5 cycles (DLL enabled) or 1 cycle (DLL disabled via DOFF = LOW) - determines minimum clock-to-data delay for first valid output word
Core Supply Voltage (VDD) 1.8 V ± 0.1 V - powers internal logic and memory array; strict tolerance required for timing stability
I/O Supply Voltage (VDDQ) 1.4 V to 1.8 V - sets HSTL Class I output drive strength and input threshold reference
Package 165-ball FBGA (15 × 17 × 1.4 mm) - supports high-density routing and thermal dissipation in telecom PCBs
Burst Length 4 words - reduces address bus toggling frequency by 4× versus single-word access

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 1.0 mm ball pitch, Pb-free and RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input Latched on rising edges of K/K; supports full 36-bit parallel writes per burst
Q[35:0] Synchronous read data output Driven on rising edges of C/C; provides 36-bit DDR output aligned to echo clocks
RPS / WPS Active-low port select controls Enable independent read/write port activation; essential for depth expansion and interleaved access
BWS[3:0] Byte write select inputs Mask individual 9-bit bytes during write; BWS0–BWS3 cover D[8:0] through D[35:27]
K / K Positive/negative input clocks Capture all synchronous inputs (address, control, data); define system timing reference
C / C Positive/negative output clocks Source timing for Q[35:0] and CQ/CQ; enable flight-time deskewing across multiple devices
CQ / CQ Output echo clocks Free-running, phase-aligned copies of C/C; simplify high-speed data capture at controller
ZQ Impedance calibration input Connects to external resistor to ground to tune output driver impedance to 0.2 × RQ
DOFF DLL disable control Pull LOW to disable DLL and operate in QDR I mode (1-cycle latency, ≤167 MHz)
VDD / VDDQ / VSS / VREF Power and reference supplies VDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O; VREF = static HSTL reference; VSS = common ground

Key Features

Feature Design Value
Independent Read/Write Ports Eliminates data bus turnaround delays and contention, enabling true concurrent access in packet-forwarding engines
DDR Interfaces on Both Ports Delivers 600 MT/s effective throughput per port at 167 MHz clock (1.5 ns period), doubling bandwidth vs. SDR
4-Word Burst Architecture Reduces address bus switching frequency by 75%, lowering EMI and simplifying controller address generation logic
Delay Lock Loop (DLL) Enables 1.5-cycle read latency with sub-100 ps skew control between C/C and Q[35:0], critical for >300 Mbps link rates
HSTL Class I Compatible I/Os Supports 1.4–1.8 V VDDQ operation with programmable drive strength and ZQ-calibrated output impedance for signal integrity

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing incoming/outgoing Ethernet or SONET/SDH frames in real time within a switch fabric ASIC interface.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfacing directly to SerDes PHYs and traffic managers.

Use Value: Concurrent 4-word DDR reads/writes at 167 MHz sustain 4.8 GB/s aggregate bandwidth, matching OC-192 line rates without stall cycles.

Use Scenario: Acting as frame descriptor cache and payload scratchpad in multi-service provisioning platforms (MSPPs).

IC Role / Device Role / Timing Role: Dual-port SRAM providing deterministic access to control metadata and packet payloads under strict jitter budgets.

Use Value: 1.5-cycle DLL latency ensures predictable read response within 2.25 ns, meeting <3 ns jitter tolerance for TDM-over-packet timing recovery.

Depth-Expanded Memory Arrays High-Speed Test Equipment Buffer

Use Scenario: Constructing larger memory capacity using multiple CY7C1515JV18 devices in parallel with RPS/WPS-controlled bank selection.

IC Role / Device Role / Timing Role: Modular memory building block supporting scalable capacity while preserving per-device timing independence.

Use Value: Port-select signals allow seamless interleaving across devices without added glue logic or timing compensation.

Use Scenario: Capturing high-frequency digital stimulus/response waveforms in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: Low-jitter, burst-capable memory staging data between FPGA sequencer and DAC/ADC interfaces.

Use Value: Echo clocks (CQ/CQ) align captured data edges to controller sampling clocks, reducing setup/hold margin requirements by ≥150 ps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150L10BG 36-Mbit (1M × 36), 100 MHz max, LVDS I/O, no DLL, 2.5 V VDDQ Lower density and bandwidth; suited for legacy systems with LVDS signaling and relaxed timing Select when system uses LVDS interfaces and does not require DLL-based latency optimization
ISSI IS61WV102436B 36-Mbit (1M × 36), 166 MHz max, SSTL-2 I/O, asynchronous reset, no echo clocks Lacks QDR II burst and echo clock features; requires external deskew circuitry for >200 MHz operation Select for cost-sensitive designs where DDR timing margins allow simplified clocking and no CQ/CQ dependency

Compared with IDT72T36150L10BG and IS61WV102436B, the CY7C1515JV18 uniquely delivers 72-Mbit density with DLL-controlled 1.5-cycle latency, integrated echo clocks, and HSTL I/O-enabling higher bandwidth and lower system-level timing complexity in next-generation packet infrastructure.

Availability

CY7C1515JV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and depth-expanded memory arrays requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial deployment.

Supply support for CY7C1515JV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for communications and industrial markets.

The CY7C1515JV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, high-bandwidth memory access in networking and telecommunications infrastructure where concurrent read/write throughput and sub-nanosecond timing predictability are critical.

FAQ

What is the function of the DOFF pin on CY7C1515JV18?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and reduced timing constraints, allowing use at up to 167 MHz without DLL calibration. In normal operation, DOFF must be tied HIGH via ≤10 kΩ pull-up to enable DLL functionality and achieve 1.5-cycle latency.

How does the ZQ pin affect output impedance calibration?

The ZQ pin connects to an external precision resistor (RQ) to ground, enabling on-die calibration of Q[35:0], CQ, and CQ output driver impedance to 0.2 × RQ. This matches the device's output termination to the system data bus characteristic impedance (e.g., 50 Ω), minimizing reflections and improving signal integrity. Connecting ZQ directly to VDDQ enables minimum-impedance mode; it must never be left floating or tied to GND.

Can CY7C1515JV18 operate with only a single clock domain?

Yes. The device supports single-clock-mode operation where K/K serve as both input and output clocks. In this mode, C/C are unused, and Q[35:0] outputs are timed to K/K edges instead of C/C. However, echo clocks (CQ/CQ) remain functional and synchronized to K/K, preserving their utility for data capture alignment even without dedicated output clocks.

What is the purpose of BWS[3:0] in CY7C1515JV18?

BWS[3:0] (Byte Write Select) are active-low signals that gate individual 9-bit byte lanes during write operations. BWS0–BWS3 control D[8:0], D[17:9], D[26:18], and D[35:27], respectively. When a BWS bit is deasserted, the corresponding byte is masked and remains unaltered in memory-enabling partial-word updates without read-modify-write cycles, critical for descriptor field manipulation in packet processing.

CY7C1515JV18-167BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1515JV18-167BZI FAQ

1.How can I place an order for CY7C1515JV18-167BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1515JV18-167BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1515JV18-167BZI reliable?

The price and inventory of CY7C1515JV18-167BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515JV18-167BZI is usually 5 days.

3.What payment methods are accepted for CY7C1515JV18-167BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515JV18-167BZI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1515JV18-167BZI?

CY7C1515JV18-167BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1515JV18-167BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1515JV18-167BZI?

For technical support, including CY7C1515JV18-167BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515JV18-167BZI requirements.

6.How does Aetrix verify that CY7C1515JV18-167BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1515JV18-167BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515JV18-167BZI meets industry standards.

7.What is the process for return or replacement of CY7C1515JV18-167BZI?

All CY7C1515JV18-167BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515JV18-167BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1515JV18-167BZI part is unused and in its original packaging.

Return procedure for CY7C1515JV18-167BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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