Cypress Semiconductor Corp CY7C1515KV18-250BZC
- Part No.:
- CY7C1515KV18-250BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1515KV18-250BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,599
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1515KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 333 MHz clock capability, 666 MHz DDR data transfer rate on both read and write ports, and 1.8 V core / 1.4–1.8 V I/O supply - deployed in high-bandwidth packet buffering for network line cards.
For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection criteria include four-word burst timing, echo clock (CQ/CQ) support for source-synchronous capture, DOFF-configurable 1.5-cycle vs. 1-cycle read latency, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-density routing.
Technical Context
The CY7C1515KV18 implements a true dual-port synchronous SRAM architecture with physically separate read and write data paths, eliminating bus turnaround overhead. It uses independent K/K clocks for address/data capture and C/C clocks for output timing, enabling concurrent read/write operations at full bandwidth.
Its QDR II architecture relies on a phase-locked loop (PLL) to align echo clocks (CQ/CQ) with output data edges, supporting precise source-synchronous capture in systems operating up to 333 MHz. The device supports depth expansion via RPS/WPS controls and byte-level write masking through BWS[3:0].
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s DDR throughput per port |
| Read Latency | Configurable: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) |
| Supply Voltages | VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports mixed-voltage I/O interfaces |
| Burst Length | Four-word burst - reduces address bus toggling frequency by 4× vs. single-word access |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch layout for high-speed signal integrity |
| Interface Standard | HSTL Class I compatible - ensures impedance-matched signaling at 666 MHz |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit wide data bus sampled on rising edge of K/K; supports full-word or byte-masked writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit wide DDR output driven on rising edges of C/C; tristated when RPS is deasserted |
| A[18:0] | Multiplexed address input | 19-bit address bus latched on rising edge of K; shared between read and write ports |
| RPS | Read port select | Active-low synchronous control; initiates read burst and enables Q[35:0] drivers |
| WPS | Write port select | Active-low synchronous control; enables D[35:0] sampling and write to memory array |
| BWS[3:0] | Byte write select | Four active-low signals controlling 8-bit write enable per byte; preserves unselected bytes during partial writes |
| C, C | Output data clocks | Differential pair used to clock Q[35:0]; enables deskewing across multiple devices in parallel topology |
| CQ, CQ | Echo clocks | Source-synchronous output clocks aligned with Q[35:0] edges; simplifies high-speed data capture at controller |
| K, K | Input clocks | Differential pair for address, control, and write data capture; only rising edges used for synchronization |
| DOFF | Read latency mode select | Static control pin setting read latency to 1 cycle (LOW) or 1.5 cycles (HIGH) - affects timing closure margin |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Enables true concurrent transactions without bus arbitration or turnaround delay |
| Four-word burst architecture | Reduces effective address bus frequency by 75%, easing PCB routing and timing closure |
| Echo clock (CQ/CQ) support | Eliminates need for tight board-level trace length matching between data and clock nets |
| Programmable read latency (DOFF) | Allows trade-off between latency and setup/hold margin in system-level timing analysis |
| JTAG 1149.1 boundary scan | Enables production testability and interconnect verification without physical probe access |
| Variable-drive HSTL outputs | Adjustable drive strength compensates for varying PCB trace impedance and loading conditions |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/25G Ethernet line cards with real-time traffic shaping. IC Role / Device Role / Timing Role: Dual-port SRAM serving as zero-latency, concurrent-access buffer between ingress parser and egress scheduler logic. Use Value: Four-word burst and echo clocks ensure deterministic 333 MHz read/write throughput with sub-nanosecond skew control across 36-bit data paths. |
Use Scenario: Capturing high-resolution waveform samples in automated test equipment (ATE) with >1 GSPS acquisition rates. IC Role / Device Role / Timing Role: High-bandwidth memory buffer interfacing directly with ADC/DAC controllers using source-synchronous DDR timing. Use Value: 666 MT/s DDR interface and programmable DOFF allow precise alignment of sample capture windows with minimal jitter accumulation. |
| Telecom Baseband Processing | AI Accelerator On-Chip Cache |
|
Use Scenario: Temporary storage of FFT coefficients and channel estimation data in LTE/5G baseband processors. IC Role / Device Role / Timing Role: Low-latency, depth-expandable memory block supporting parallel read/write streams from multiple DSP cores. Use Value: Independent RPS/WPS controls and BWS[3:0] enable fine-grained memory access coherency across heterogeneous processing units. |
Use Scenario: Serving as L2 cache for tensor compute units in edge AI accelerators requiring sustained 50+ GB/s memory bandwidth. IC Role / Device Role / Timing Role: High-throughput SRAM acting as bandwidth-aggregating buffer between systolic array and external DRAM controller. Use Value: 72-Mbit density in compact FBGA and 1.5-cycle latency mode optimize area efficiency and pipeline depth for fixed-function accelerators. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1513KV18 | 4M × 18 organization (72 Mbit), same 333 MHz max clock, identical FBGA package but different pin mapping for D/Q and BWS signals | Requires PCB redesign due to 18-bit data bus and BWS[1:0] instead of BWS[3:0]; suitable where narrower data path suffices | Select when system bandwidth demand fits 18-bit interface and board layout allows pinout change |
| AS7C362000B-25JIN | 72-Mbit QDR II+ SRAM (2M × 36), 250 MHz max clock, 1.8 V core, but lacks echo clocks (CQ/CQ) and uses different JTAG implementation | Lower maximum frequency limits use in 333 MHz systems; absence of echo clocks increases timing margin requirements | Choose only if 250 MHz bandwidth is sufficient and controller supports non-echo-clock capture schemes |
Compared with CY7C1513KV18, CY7C1515KV18 offers native 36-bit data width and BWS[3:0] granularity without re-routing; versus AS7C362000B-25JIN, it delivers higher bandwidth and built-in echo clocking for robust 333 MHz operation in telecom infrastructure.
Availability
CY7C1515KV18 is available at Aetrix Electronics and suitable for network line cards, high-speed test instrumentation, telecom baseband modules, and AI accelerator subsystems requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1515KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.
The QDR® II SRAM product line targets high-bandwidth, low-latency buffering in packet-switched infrastructure - optimized for deterministic timing, concurrent access, and signal integrity at multi-GHz data rates.
FAQ
What is the function of the DOFF pin on CY7C1515KV18?
The DOFF (Data Output OFF) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency mode for improved setup/hold timing margins; when LOW, it selects 1-cycle latency for minimum delay. This setting is sampled at power-up and remains static during operation - no runtime reconfiguration is supported.
Can CY7C1515KV18 operate with only a single clock domain (K only)?
Yes - the device supports single-clock mode where K serves as both input and output clock. In this configuration, C and C inputs are tied to K and K respectively, and Q[35:0] data is clocked by K/K edges. However, echo clock (CQ/CQ) functionality and optimal deskew capability require the dual-clock mode with separate C/C inputs.
How does byte write select (BWS) work in CY7C1515KV18?
BWS[3:0] are active-low signals controlling eight-bit write enable per byte across the 36-bit D[35:0] bus: BWS0 enables D[7:0], BWS1 enables D[15:8], BWS2 enables D[23:16], and BWS3 enables D[35:24]. Unselected bytes retain their prior values - no read-modify-write cycle is required for partial writes.
Is the 165-ball FBGA package of CY7C1515KV18 compatible with standard reflow profiles?
Yes - the package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤260°C). Ball composition is SnAgCu (SAC305), and thermal pad design accommodates standard stencil apertures for reliable solder joint formation under typical SMT process controls.
CY7C1515KV18-250BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1515KV18-250BZC FAQ
1.How can I place an order for CY7C1515KV18-250BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1515KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1515KV18-250BZC reliable?
The price and inventory of CY7C1515KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-250BZC is usually 5 days.
3.What payment methods are accepted for CY7C1515KV18-250BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515KV18-250BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1515KV18-250BZC?
CY7C1515KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1515KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1515KV18-250BZC?
For technical support, including CY7C1515KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-250BZC requirements.
6.How does Aetrix verify that CY7C1515KV18-250BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1515KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-250BZC meets industry standards.
7.What is the process for return or replacement of CY7C1515KV18-250BZC?
All CY7C1515KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-250BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1515KV18-250BZC part is unused and in its original packaging.
Return procedure for CY7C1515KV18-250BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1515KV18-250BZC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

