Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C1515KV18-250BZC

Part No.:
CY7C1515KV18-250BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1515KV18-250BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,599

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1515KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 333 MHz clock capability, 666 MHz DDR data transfer rate on both read and write ports, and 1.8 V core / 1.4–1.8 V I/O supply - deployed in high-bandwidth packet buffering for network line cards.

For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection criteria include four-word burst timing, echo clock (CQ/CQ) support for source-synchronous capture, DOFF-configurable 1.5-cycle vs. 1-cycle read latency, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-density routing.

Technical Context

The CY7C1515KV18 implements a true dual-port synchronous SRAM architecture with physically separate read and write data paths, eliminating bus turnaround overhead. It uses independent K/K clocks for address/data capture and C/C clocks for output timing, enabling concurrent read/write operations at full bandwidth.

Its QDR II architecture relies on a phase-locked loop (PLL) to align echo clocks (CQ/CQ) with output data edges, supporting precise source-synchronous capture in systems operating up to 333 MHz. The device supports depth expansion via RPS/WPS controls and byte-level write masking through BWS[3:0].

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization)
Max Clock Frequency 333 MHz - enables 666 MT/s DDR throughput per port
Read Latency Configurable: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW)
Supply Voltages VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports mixed-voltage I/O interfaces
Burst Length Four-word burst - reduces address bus toggling frequency by 4× vs. single-word access
Package 165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch layout for high-speed signal integrity
Interface Standard HSTL Class I compatible - ensures impedance-matched signaling at 666 MHz

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit wide data bus sampled on rising edge of K/K; supports full-word or byte-masked writes via BWS[3:0]
Q[35:0] Synchronous read data output 36-bit wide DDR output driven on rising edges of C/C; tristated when RPS is deasserted
A[18:0] Multiplexed address input 19-bit address bus latched on rising edge of K; shared between read and write ports
RPS Read port select Active-low synchronous control; initiates read burst and enables Q[35:0] drivers
WPS Write port select Active-low synchronous control; enables D[35:0] sampling and write to memory array
BWS[3:0] Byte write select Four active-low signals controlling 8-bit write enable per byte; preserves unselected bytes during partial writes
C, C Output data clocks Differential pair used to clock Q[35:0]; enables deskewing across multiple devices in parallel topology
CQ, CQ Echo clocks Source-synchronous output clocks aligned with Q[35:0] edges; simplifies high-speed data capture at controller
K, K Input clocks Differential pair for address, control, and write data capture; only rising edges used for synchronization
DOFF Read latency mode select Static control pin setting read latency to 1 cycle (LOW) or 1.5 cycles (HIGH) - affects timing closure margin

Key Features

Feature Design Value
Separate read/write data ports Enables true concurrent transactions without bus arbitration or turnaround delay
Four-word burst architecture Reduces effective address bus frequency by 75%, easing PCB routing and timing closure
Echo clock (CQ/CQ) support Eliminates need for tight board-level trace length matching between data and clock nets
Programmable read latency (DOFF) Allows trade-off between latency and setup/hold margin in system-level timing analysis
JTAG 1149.1 boundary scan Enables production testability and interconnect verification without physical probe access
Variable-drive HSTL outputs Adjustable drive strength compensates for varying PCB trace impedance and loading conditions

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and payloads in 10G/25G Ethernet line cards with real-time traffic shaping.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as zero-latency, concurrent-access buffer between ingress parser and egress scheduler logic.

Use Value: Four-word burst and echo clocks ensure deterministic 333 MHz read/write throughput with sub-nanosecond skew control across 36-bit data paths.

Use Scenario: Capturing high-resolution waveform samples in automated test equipment (ATE) with >1 GSPS acquisition rates.

IC Role / Device Role / Timing Role: High-bandwidth memory buffer interfacing directly with ADC/DAC controllers using source-synchronous DDR timing.

Use Value: 666 MT/s DDR interface and programmable DOFF allow precise alignment of sample capture windows with minimal jitter accumulation.

Telecom Baseband Processing AI Accelerator On-Chip Cache

Use Scenario: Temporary storage of FFT coefficients and channel estimation data in LTE/5G baseband processors.

IC Role / Device Role / Timing Role: Low-latency, depth-expandable memory block supporting parallel read/write streams from multiple DSP cores.

Use Value: Independent RPS/WPS controls and BWS[3:0] enable fine-grained memory access coherency across heterogeneous processing units.

Use Scenario: Serving as L2 cache for tensor compute units in edge AI accelerators requiring sustained 50+ GB/s memory bandwidth.

IC Role / Device Role / Timing Role: High-throughput SRAM acting as bandwidth-aggregating buffer between systolic array and external DRAM controller.

Use Value: 72-Mbit density in compact FBGA and 1.5-cycle latency mode optimize area efficiency and pipeline depth for fixed-function accelerators.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1513KV18 4M × 18 organization (72 Mbit), same 333 MHz max clock, identical FBGA package but different pin mapping for D/Q and BWS signals Requires PCB redesign due to 18-bit data bus and BWS[1:0] instead of BWS[3:0]; suitable where narrower data path suffices Select when system bandwidth demand fits 18-bit interface and board layout allows pinout change
AS7C362000B-25JIN 72-Mbit QDR II+ SRAM (2M × 36), 250 MHz max clock, 1.8 V core, but lacks echo clocks (CQ/CQ) and uses different JTAG implementation Lower maximum frequency limits use in 333 MHz systems; absence of echo clocks increases timing margin requirements Choose only if 250 MHz bandwidth is sufficient and controller supports non-echo-clock capture schemes

Compared with CY7C1513KV18, CY7C1515KV18 offers native 36-bit data width and BWS[3:0] granularity without re-routing; versus AS7C362000B-25JIN, it delivers higher bandwidth and built-in echo clocking for robust 333 MHz operation in telecom infrastructure.

Availability

CY7C1515KV18 is available at Aetrix Electronics and suitable for network line cards, high-speed test instrumentation, telecom baseband modules, and AI accelerator subsystems requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1515KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

The QDR® II SRAM product line targets high-bandwidth, low-latency buffering in packet-switched infrastructure - optimized for deterministic timing, concurrent access, and signal integrity at multi-GHz data rates.

FAQ

What is the function of the DOFF pin on CY7C1515KV18?

The DOFF (Data Output OFF) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency mode for improved setup/hold timing margins; when LOW, it selects 1-cycle latency for minimum delay. This setting is sampled at power-up and remains static during operation - no runtime reconfiguration is supported.

Can CY7C1515KV18 operate with only a single clock domain (K only)?

Yes - the device supports single-clock mode where K serves as both input and output clock. In this configuration, C and C inputs are tied to K and K respectively, and Q[35:0] data is clocked by K/K edges. However, echo clock (CQ/CQ) functionality and optimal deskew capability require the dual-clock mode with separate C/C inputs.

How does byte write select (BWS) work in CY7C1515KV18?

BWS[3:0] are active-low signals controlling eight-bit write enable per byte across the 36-bit D[35:0] bus: BWS0 enables D[7:0], BWS1 enables D[15:8], BWS2 enables D[23:16], and BWS3 enables D[35:24]. Unselected bytes retain their prior values - no read-modify-write cycle is required for partial writes.

Is the 165-ball FBGA package of CY7C1515KV18 compatible with standard reflow profiles?

Yes - the package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤260°C). Ball composition is SnAgCu (SAC305), and thermal pad design accommodates standard stencil apertures for reliable solder joint formation under typical SMT process controls.

CY7C1515KV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1515KV18-250BZC FAQ

1.How can I place an order for CY7C1515KV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1515KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1515KV18-250BZC reliable?

The price and inventory of CY7C1515KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1515KV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515KV18-250BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1515KV18-250BZC?

CY7C1515KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1515KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1515KV18-250BZC?

For technical support, including CY7C1515KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-250BZC requirements.

6.How does Aetrix verify that CY7C1515KV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1515KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1515KV18-250BZC?

All CY7C1515KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1515KV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1515KV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1515KV18-250BZC Tags

  • CY7C1515KV18-250BZC
  • CY7C1515KV18-250BZC PDF
  • CY7C1515KV18-250BZC Datasheet
  • CY7C1515KV18-250BZC Specifications
  • CY7C1515KV18-250BZC Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C1515KV18-250BZC
  • Buy CY7C1515KV18-250BZC
  • CY7C1515KV18-250BZC Price
  • CY7C1515KV18-250BZC Distributor
  • CY7C1515KV18-250BZC Supplier
  • CY7C1515KV18-250BZC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER