Cypress Semiconductor Corp CY7C1515KV18-250BZXC
- Part No.:
- CY7C1515KV18-250BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1515KV18-250BZXC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:856
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Product details
Overview
CY7C1515KV18 from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (40 ns clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports (500 Mbps per data pin), echo clocks (CQ/CQ), and PLL-based timing control for high-bandwidth networking buffers in packet switching ASICs.
For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection criteria include 2M × 36 depth-width configuration, FBGA-165 package compatibility, DOFF-controlled read latency (1.5-cycle vs. 1-cycle), BWS[3:0] byte write granularity, and JTAG 1149.1 test access support.
Technical Context
The CY7C1515KV18 implements a synchronous pipelined QDR II architecture with independent read and write ports sharing a single multiplexed address bus (A[18:0]). Read and write operations are latched on alternate rising edges of the K clock, enabling concurrent transactions without bus turnaround.
It uses dual output clocks (C and C) with echo clocks (CQ and CQ) to compensate for PCB flight-time skew, and integrates a PLL for precise data placement. The device supports programmable impedance, HSTL-compatible output drivers, and synchronous self-timed writes with full data coherency across all four burst words.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 250 MHz (40 ns period); enables 500 MT/s DDR data rate per pin |
| Core Supply (VDD) | 1.8 V ±0.1 V; defines internal logic voltage and timing margins |
| I/O Supply (VDDQ) | 1.4 V to 1.8 V; supports HSTL Class I/II drive strength and termination |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); determines pipeline depth in controller design |
| Burst Length | Four 36-bit words per access; reduces address bus toggling by 75% vs. single-word |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm); compatible with high-density routing and thermal dissipation |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | 36-bit parallel input sampled on rising edge of K/K; supports full or partial (via BWS[3:0]) word writes |
| Q[35:0] | Synchronous read data outputs | 36-bit DDR outputs driven on rising edges of C/C; tristated when RPS deasserted |
| A[18:0] | Multiplexed address bus | 19-bit address shared by read/write ports; latched on alternating K-clock edges for burst addressing |
| RPS / WPS | Read/write port select | Active-low synchronous enables; decouples port activity for depth expansion or power gating |
| BWS[3:0] | Byte write select | Four independent active-low controls for 9-bit byte segments; enables partial writes without read-modify-write |
| C / C / CQ / CQ | Output clock & echo clock pairs | C/C deskew output timing; CQ/CQ provide source-synchronous capture reference at receiver |
| K / K | Input clock pair | Rising-edge-triggered for all synchronous inputs; K used for address/data capture, K for timing redundancy |
| DOFF | Read latency mode control | High = 1.5-cycle latency (pipelined), Low = 1-cycle latency (QDR I compatibility) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround overhead; enables true concurrent read+write at full bandwidth |
| Four-word burst architecture | Reduces effective address bus frequency by 4×, lowering controller pin count and routing complexity |
| DDR interfaces on both ports | Delivers 500 MT/s per pin at 250 MHz clock; doubles throughput vs. SDR at same frequency |
| Echo clocks (CQ/CQ) | Enables source-synchronous data capture at receiver; removes need for tight board-level clock skew control |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant testing and debug of interconnect integrity in high-speed memory subsystems |
| Programmable output drive impedance | Allows dynamic matching to trace impedance without external resistors; improves signal integrity in varied layouts |
Applications
| Packet Buffer in Switch ASICs | Line Card Memory in Telecom Routers |
|---|---|
Use Scenario: High-throughput packet buffering between ingress and egress engines in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: QDR II SRAM serves as low-latency, concurrent-access buffer with deterministic 1.5-cycle read latency and burst-aligned write coalescing. Use Value: Enables line-rate forwarding at 10 Gbps+ by sustaining >14 Gbps aggregate bandwidth (36 bits × 500 MT/s) with zero bus turnaround penalty. | Use Scenario: Frame storage and reordering in OC-192/STM-64 line cards requiring deep, fast-access memory for traffic shaping. IC Role / Device Role / Timing Role: Acts as dual-port scratchpad for header parsing and payload staging, synchronized via C/C and CQ/CQ to FPGA controller. Use Value: Achieves 72-Mbit capacity in compact FBGA-165 footprint while maintaining sub-40 ns random access time for real-time scheduling. |
| Baseband Processing in 4G/LTE BTS | Real-Time Video Processing Buffer |
Use Scenario: Turbo decoder intermediate data storage in LTE baseband processors handling multiple simultaneous user channels. IC Role / Device Role / Timing Role: Provides pipelined, burst-access memory for iterative decoding algorithms with strict timing deadlines per symbol period. Use Value: Supports concurrent read (current iteration) and write (next iteration) with no contention, reducing processing latency by up to 30% vs. single-port SRAM. | Use Scenario: Frame buffering between video encoder and display controller in broadcast-grade HD/4K systems. IC Role / Device Role / Timing Role: Serves as dual-clock domain bridge: writes at sensor pixel clock (e.g., 148.5 MHz), reads at display refresh clock (e.g., 60 Hz). Use Value: Eliminates FIFO depth requirements through native concurrent access, reducing system latency to <1 frame and simplifying clock domain crossing logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1515KV18-200BZXC | 200 MHz max frequency (50 ns clock); lower power consumption (680 mA @ VDDQ=1.5 V) | Targeted for cost-sensitive telecom line cards where bandwidth <11.5 Gbps suffices | Select when system clock budget allows 50 ns period and thermal/power envelope is constrained |
| AS7C3256B-25JC | Asynchronous 256K × 16 SRAM; no DDR, no echo clocks, no burst; 25 ns access time | Suitable only for legacy designs lacking QDR timing requirements or burst protocols | Use only if controller lacks QDR interface logic; not drop-in compatible due to protocol and pinout mismatch |
Compared with CY7C1515KV18-250BZXC, the -200 variant trades 20% bandwidth for lower power and cost, while AS7C3256B requires complete redesign of timing control and data flow-neither offers functional equivalence without architectural changes.
Availability
CY7C1515KV18-250BZXC is available at Aetrix Electronics and suitable for packet-switching ASICs, telecom line cards, LTE baseband processors, and real-time video encoders requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1515KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
The QDR® II SRAM product line was designed specifically for high-bandwidth, low-latency buffering in networking and telecommunications infrastructure, emphasizing concurrent access, burst efficiency, and signal integrity at multi-Gbps rates.
FAQ
What is the function of the DOFF pin on CY7C1515KV18-250BZXC?
The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle read latency (QDR II mode) for pipelined operation; when LOW, it configures 1-cycle latency (QDR I compatibility mode). This setting directly affects controller pipeline depth and must be fixed at power-up; it is not dynamically switchable during operation.
How does the BWS[3:0] signal operate in CY7C1515KV18-250BZXC?
BWS[3:0] are active-low byte write select signals controlling four independent 9-bit segments of the 36-bit D[35:0] bus. Each BWS bit enables writing to its corresponding byte group (e.g., BWS0 → D[8:0]); deselected bytes retain prior contents. All BWS signals are sampled synchronously with data on the rising edge of K/K, enabling partial writes without read-modify-write cycles.
Can CY7C1515KV18-250BZXC operate with only a single clock (K) instead of differential K/K?
Yes - the device supports single-clock-domain operation using only the K input clock for both address/data capture and output timing (C and C tied to K and K respectively). In this mode, echo clocks (CQ/CQ) remain functional for source-synchronous capture, but deskewing capability is reduced compared to true differential C/C usage.
What is the purpose of NC/144M and NC/288M pins in the FBGA-165 package?
NC/144M and NC/288M are no-connect pins not bonded to the die; they may be left floating or tied to any valid voltage level (e.g., VSS or VDDQ) for mechanical stability or thermal relief. These pins serve no electrical function and do not affect device operation, timing, or reliability - their presence accommodates die size variations across the QDR II family.
CY7C1515KV18-250BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1515KV18-250BZXC FAQ
1.How can I place an order for CY7C1515KV18-250BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1515KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1515KV18-250BZXC reliable?
The price and inventory of CY7C1515KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-250BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1515KV18-250BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515KV18-250BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1515KV18-250BZXC?
CY7C1515KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1515KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1515KV18-250BZXC?
For technical support, including CY7C1515KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-250BZXC requirements.
6.How does Aetrix verify that CY7C1515KV18-250BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1515KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-250BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1515KV18-250BZXC?
All CY7C1515KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-250BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1515KV18-250BZXC part is unused and in its original packaging.
Return procedure for CY7C1515KV18-250BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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