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Cypress Semiconductor Corp CY7C1515KV18-250BZXI

Part No.:
CY7C1515KV18-250BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1515KV18-250BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,343

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Product details

Overview

CY7C1515KV18 from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II SRAM with four-word burst architecture, 1.8-V core supply, and DDR interfaces on independent read/write ports. It operates at 250 MHz (40 ns clock period), delivers 600 MB/s sustained bandwidth, and uses echo clocks (CQ/CQ) for timing-critical data capture in high-speed networking buffers and packet processors.

For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection criteria include its 2M × 36 organization, 165-ball FBGA package, DOFF-configurable 1.5-cycle vs. 1-cycle read latency, HSTL-compatible I/O with VDDQ = 1.4–1.8 V, and JTAG 1149.1 test access support.

Technical Context

This QDR II SRAM implements fully synchronous, pipelined read/write operations using separate K/K input clocks for address/data capture and C/C output clocks for data launch. Its dual-port architecture eliminates bus turnaround delays by dedicating D[35:0] inputs to writes and Q[35:0] outputs to reads.

The device integrates a PLL for precise internal timing alignment, supports depth expansion via RPS/WPS controls, and enables byte-level write masking through BWS[3:0]. All operations are edge-triggered on rising edges of K or C clocks, with self-timed write cycles ensuring deterministic timing.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization2M × 36 (72 Mbit total); enables single-access retrieval of 144-bit wide data blocks
Max Clock Frequency250 MHz (40 ns period); defines maximum sustained throughput of 600 MB/s
Read LatencyConfigurable: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); impacts pipeline depth in switch fabric designs
Core SupplyVDD = 1.8 V ±0.1 V; requires tight regulation for stable 250 MHz operation
I/O Supply RangeVDDQ = 1.4 V to 1.8 V; supports interoperability with 1.5 V or 1.8 V logic families
Package165-ball FBGA (13 × 15 × 1.4 mm); fine-pitch layout demands controlled-impedance PCB routing
Burst LengthFour-word burst per access; reduces address bus toggling frequency by 4× versus single-word mode

Pinout & Package

165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Write data inputs36-bit parallel input bus sampled on rising edge of K clock; supports full-word or byte-masked writes via BWS[3:0]
Q[35:0]Read data outputs36-bit parallel output bus launched on rising edges of C/C clocks; tristated when RPS is deasserted
A[18:0]Address inputs19-bit multiplexed address bus latched on K rising edge for both read and write accesses
RPSRead port selectActive-low synchronous control; initiates 4-word burst read when asserted on K edge
WPSWrite port selectActive-low synchronous control; enables write transaction and data sampling on K edge
BWS[3:0]Byte write selectsFour active-low signals enabling independent 8-bit write masking; each controls one byte of D[35:0]
C, COutput data clocksDifferential pair driving Q[35:0]; used with echo clocks (CQ/CQ) to compensate for board flight time skew
K, KInput clocksDifferential pair capturing A[18:0], D[35:0], RPS, WPS, BWS[3:0]; only rising edges used
CQ, CQEcho clocksOutput-referenced clocks synchronized to Q[35:0] transitions; simplify source-synchronous capture at controller
DOFFRead latency controlStatic input selecting 1-cycle (LOW) or 1.5-cycle (HIGH) read latency; affects pipeline staging in ASIC/FPGA interfaces

Key Features

FeatureDesign Value
Independent read/write portsEnables concurrent memory access without bus arbitration or turnaround cycles, critical for full-duplex packet buffering
Four-word burst architectureReduces effective address bus frequency by 75%, easing timing closure on high-speed interconnects
HSTL-compatible I/O with variable driveEnsures signal integrity at 666 MT/s DDR rates while supporting multiple VDDQ levels (1.4–1.8 V)
JTAG 1149.1 boundary scanEnables in-system test and debug of solder joints and interconnects in dense FBGA layouts
PLL-based internal timingProvides deterministic setup/hold margins for internal registers, eliminating external clock tree tuning

Applications

High-Speed Network Switch BufferTelecom Line Card Packet Memory

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switching ASICs operating at 10+ Gbps line rates.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as shared buffer between ingress parser and egress scheduler, with RPS/WPS enabling simultaneous header read and payload write.

Use Value: 600 MB/s bandwidth and zero-turnaround architecture eliminate serialization bottlenecks in cut-through forwarding paths.

Use Scenario: Holding real-time voice/video frame buffers in multi-channel TDM-to-Packet gateways with strict jitter requirements.

IC Role / Device Role / Timing Role: Synchronous memory providing deterministic 1-cycle read latency (DOFF = LOW) for jitter-sensitive playback timing recovery.

Use Value: Echo clocks (CQ/CQ) align data capture windows precisely with controller sampling edges, reducing timing margin allocation by ≥150 ps.

Baseband Processing MemoryFPGA-Based Protocol Accelerator

Use Scenario: Acting as low-latency scratchpad for LTE/5G baseband processors performing turbo decoding and channel estimation.

IC Role / Device Role / Timing Role: High-bandwidth memory interfacing directly with FPGA fabric via dedicated read/write data buses and independent clock domains.

Use Value: 2M × 36 organization matches common FFT/IFFT word widths, minimizing address translation logic and improving DMA efficiency.

Use Scenario: Offloading TCP/IP checksum, encryption, and packet classification tasks in smart NICs using FPGA-accelerated engines.

IC Role / Device Role / Timing Role: Configurable-latency SRAM (DOFF = HIGH for 1.5-cycle mode) synchronizing with multi-stage pipeline stages in deep FPGA pipelines.

Use Value: Byte-write masking (BWS[3:0]) allows partial updates of protocol headers without full-word read-modify-write cycles, cutting power by ~30% per update.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1515KV18-250BZISame die, Pb-free only; no leaded option availableIdentical functionality and timing; differs only in RoHS compliance statusSelect for new designs requiring lead-free compliance; identical drop-in replacement
AS7C3256A-25JCAsynchronous 256K × 16 SRAM; no DDR, no dual port, no echo clocksLimited to low-speed control-plane storage; cannot support 600 MB/s packet bufferingOnly suitable for non-real-time configuration storage where bandwidth and latency are not critical

Compared with CY7C1515KV18-250BZXI, the Pb-free CY7C1515KV18-250BZI offers identical performance and pinout but excludes leaded packaging, while AS7C3256A-25JC lacks QDR II architecture entirely-making it unsuitable for high-throughput, low-latency data path applications.

Availability

CY7C1515KV18-250BZXI is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and FPGA-based protocol accelerators requiring stable component supply across extended production lifecycles.

Supply support for CY7C1515KV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with headquarters in San Jose, CA.

The QDR® II SRAM product line targets bandwidth-constrained, low-latency applications such as packet switching, baseband processing, and real-time signal buffering-optimized for deterministic timing and concurrent read/write throughput.

FAQ

What is the function of the DOFF pin on CY7C1515KV18-250BZXI?

The DOFF pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in systems with longer clock-to-data flight times; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting is sampled at power-up and remains static during operation-it is not dynamically reconfigurable.

Can CY7C1515KV18-250BZXI operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes-VDDQ is independently configurable from 1.4 V to 1.8 V, allowing direct interface with 1.5 V logic families without level shifters. The device maintains full AC/DC specifications across this range when VDD remains at 1.8 V ±0.1 V, and HSTL output drivers automatically adapt drive strength to the selected VDDQ.

How does the BWS[3:0] signal control write operations?

BWS[3:0] are active-low byte write enable signals: BWS0 controls D[7:0], BWS1 controls D[15:8], BWS2 controls D[23:16], and BWS3 controls D[35:24]. When a BWS bit is deasserted (HIGH), the corresponding 8-bit byte is masked and retains its prior value; only asserted (LOW) bytes are updated during the write cycle.

Is the 165-ball FBGA package of CY7C1515KV18-250BZXI compatible with standard reflow profiles?

Yes-the package complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports standard Pb-free reflow profiles (peak temperature ≤260°C). Its 0.8 mm ball pitch requires Type II or III stencil apertures and controlled-collapse flip-chip (CCFC) solder paste volume to ensure void-free interconnects under thermal cycling.

CY7C1515KV18-250BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1515KV18-250BZXI FAQ

1.How can I place an order for CY7C1515KV18-250BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1515KV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1515KV18-250BZXI reliable?

The price and inventory of CY7C1515KV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-250BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1515KV18-250BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515KV18-250BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1515KV18-250BZXI?

CY7C1515KV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1515KV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1515KV18-250BZXI?

For technical support, including CY7C1515KV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-250BZXI requirements.

6.How does Aetrix verify that CY7C1515KV18-250BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1515KV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-250BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1515KV18-250BZXI?

All CY7C1515KV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-250BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1515KV18-250BZXI part is unused and in its original packaging.

Return procedure for CY7C1515KV18-250BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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