Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C1515KV18-300BZC

Part No.:
CY7C1515KV18-300BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1515KV18-300BZC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,190

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1515KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 300 MHz maximum clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces, four-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering systems.

For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection considerations include its 300 MHz operation under 1.8 V core, 36-bit wide synchronous interface, FBGA-165 package, DOFF-controlled read latency mode, and support for depth expansion via RPS/WPS and BWS[3:0].

Technical Context

This device uses a pipelined QDR II architecture with independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K/K, enabling concurrent transactions without bus turnaround. The internal memory array is organized as four 512K × 36 banks.

It employs dual output clocks (C/C) and echo clocks (CQ/CQ) to compensate for PCB flight-time skew, and includes a PLL for precise data placement. Write operations are internally self-timed, and read latency is configurable between 1-cycle (DOFF = LOW) and 1.5-cycle (DOFF = HIGH) modes.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 configuration)
Max Clock Frequency 300 MHz - supports 600 MT/s effective data rate per port
Core Supply Voltage 1.8 V ± 0.1 V - defines minimum power rail stability requirement
I/O Supply Range 1.4 V to 1.8 V - enables interoperability with both 1.5 V and 1.8 V HSTL systems
Burst Length Four-word - reduces address bus toggling frequency by 4× vs. single-word access
Read Latency Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - impacts pipeline depth in controller design
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density routing and thermal management

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Sampled on rising edge of K/K; full 36-bit parallel write path
Q[35:0] Synchronous read data outputs Driven on rising edge of C/C; tristated when RPS deasserted
A[18:0] Multiplexed address inputs 19-bit address bus shared by read/write ports; latched on K rising edge
RPS Read port select (active LOW) Enables read transaction; pending burst completes before tristating Q[35:0]
WPS Write port select (active LOW) Enables write transaction; ignored if deasserted, even with valid D[35:0]
BWS[3:0] Byte write selects (active LOW) Individually masks 8-bit segments of D[35:0]; preserves unselected bytes during partial writes
C / C Positive/negative output clocks Deskew-capable pair for timing-critical read data capture at controller
CQ / CQ Echo clocks Replicate C/C timing at receiver side to simplify high-speed capture alignment
K / K Positive/negative input clocks Drive all synchronous inputs; only rising edges used for sampling (K-only timing domain)
DOFF Read latency control HIGH → 1.5-cycle latency; LOW → 1-cycle latency - affects controller pipeline staging

Key Features

Feature Design Value
Separate read/write data paths Eliminates bus turnaround overhead - enables true concurrent read+write at full bandwidth
Four-word burst architecture Reduces required address transition rate by 75%, easing timing closure on address bus
DDR interfaces on both ports Delivers 600 MT/s effective throughput per port at 300 MHz clock - doubles data rate vs. SDR
Programmable read latency (DOFF) Allows system-level trade-off between latency and controller complexity - selectable in hardware
JTAG 1149.1 test access port Enables boundary-scan testing and debug visibility without requiring additional test pins
Variable-drive HSTL output buffers Supports impedance matching across varying trace lengths and loads - improves signal integrity

Applications

High-Speed Packet Buffering Network Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as line-rate buffer with zero wait-state concurrent access.

Use Value: 300 MHz clock + DDR + four-word burst delivers 4.32 GB/s aggregate bandwidth - sufficient for 10G/25G line-rate buffering.

Use Scenario: Interfacing with switch fabric controllers requiring low-latency, deterministic memory access.

IC Role / Device Role / Timing Role: QDR II memory acting as shared context store for crossbar arbitration logic.

Use Value: Independent RPS/WPS and BWS[3:0] enable atomic updates to 36-bit context words without disturbing adjacent entries.

Telecom Baseband Processing Test Equipment Pattern Memory

Use Scenario: Holding channelization codes and symbol buffers in LTE/5G baseband units.

IC Role / Device Role / Timing Role: High-bandwidth memory interfaced to FPGA-based DSP engines with strict timing budgets.

Use Value: Echo clocks (CQ/CQ) and matched C/C pairs reduce setup/hold margin requirements by up to 150 ps vs. single-clock DDR.

Use Scenario: Storing stimulus/response patterns in automated test equipment (ATE) for SoC validation.

IC Role / Device Role / Timing Role: Deterministic-access memory supporting synchronized pattern generation and capture.

Use Value: 1.5-cycle latency mode (DOFF = HIGH) provides predictable timing window for comparator alignment in high-speed ATE.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1515KV18-250BZC 250 MHz max clock; lower power consumption (680 mA @ VDDQ = 1.5 V) Targeted at cost-sensitive or thermally constrained systems where 300 MHz bandwidth is not required Select when system clock budget allows relaxed timing and power efficiency is prioritized over peak throughput
AS7C36256P-300BIN 300 MHz QDR II+ SRAM; 2M × 36; 1.5 V core; no DOFF pin - fixed 1-cycle latency Lacks programmable latency and echo clock support; requires tighter board-level timing control Choose only if controller design already accommodates fixed 1-cycle latency and does not rely on CQ/CQ deskew

Compared with CY7C1515KV18-250BZC, the -300BZC variant delivers 20% higher bandwidth at identical voltage and package; versus AS7C36256P-300BIN, it offers latency flexibility and enhanced signal integrity features critical for high-margin telecom designs.

Availability

CY7C1515KV18-300BZC is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and test equipment pattern memory requiring stable component supply and long-term industrial availability.

Supply support for CY7C1515KV18-300BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1515KV18 belongs to Cypress's QDR II SRAM product line, designed specifically for high-throughput, low-latency memory subsystems in networking infrastructure and real-time signal processing applications.

FAQ

What is the function of the DOFF pin on CY7C1515KV18-300BZC?

The DOFF (Data Output OFF) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency mode; when LOW, it selects 1-cycle latency. This setting directly affects the number of clock cycles between address assertion and first valid Q[35:0] data, impacting controller pipeline depth and timing margin allocation.

Can CY7C1515KV18-300BZC operate with only a single clock source?

Yes - the device supports single-clock-domain operation using only the K input clock for both input sampling and output timing (with C tied to K). However, this disables echo clock functionality and reduces timing margin compared to dual-clock (C/C + CQ/CQ) mode, limiting maximum reliable data rate in high-speed layouts.

How does byte write select (BWS[3:0]) work in practice?

BWS[3:0] are active-LOW signals that independently gate 8-bit segments of the 36-bit D[35:0] bus: BWS0 controls D[7:0], BWS1 controls D[15:8], BWS2 controls D[23:16], and BWS3 controls D[31:24]. D[35:32] and D[39:36] are unused; the remaining bits map to defined byte lanes. Unselected bytes retain prior values.

Is the 165-ball FBGA package of CY7C1515KV18-300BZC compatible with standard reflow profiles?

Yes - the package complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤ 260 °C). Its 0.8 mm ball pitch and 13 × 15 mm footprint align with industry-standard layout rules for high-density routing and thermal vias under the die.

CY7C1515KV18-300BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1515KV18-300BZC FAQ

1.How can I place an order for CY7C1515KV18-300BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1515KV18-300BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1515KV18-300BZC reliable?

The price and inventory of CY7C1515KV18-300BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-300BZC is usually 5 days.

3.What payment methods are accepted for CY7C1515KV18-300BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515KV18-300BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1515KV18-300BZC?

CY7C1515KV18-300BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1515KV18-300BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1515KV18-300BZC?

For technical support, including CY7C1515KV18-300BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-300BZC requirements.

6.How does Aetrix verify that CY7C1515KV18-300BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1515KV18-300BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-300BZC meets industry standards.

7.What is the process for return or replacement of CY7C1515KV18-300BZC?

All CY7C1515KV18-300BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-300BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1515KV18-300BZC part is unused and in its original packaging.

Return procedure for CY7C1515KV18-300BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1515KV18-300BZC Tags

  • CY7C1515KV18-300BZC
  • CY7C1515KV18-300BZC PDF
  • CY7C1515KV18-300BZC Datasheet
  • CY7C1515KV18-300BZC Specifications
  • CY7C1515KV18-300BZC Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C1515KV18-300BZC
  • Buy CY7C1515KV18-300BZC
  • CY7C1515KV18-300BZC Price
  • CY7C1515KV18-300BZC Distributor
  • CY7C1515KV18-300BZC Supplier
  • CY7C1515KV18-300BZC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER