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Cypress Semiconductor Corp CY7C1515KV18-300BZI

Part No.:
CY7C1515KV18-300BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1515KV18-300BZI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,141

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Product details

Overview

CY7C1515KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 333 MHz clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces, four-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.

For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection criteria include its 333 MHz operation, 2M × 36 × 4-word burst depth, FBGA-165 package, DOFF-configurable read latency (1.5-cycle or 1-cycle), and HSTL-compatible output drive capability.

Technical Context

The CY7C1515KV18 uses a synchronous pipelined QDR II architecture with independent read and write ports sharing a multiplexed 19-bit address bus. Address latching occurs on alternate rising edges of the K clock, enabling concurrent read/write transactions without bus turnaround.

It employs dual input clocks (K/K) for write timing and dual output clocks (C/C) with echo clocks (CQ/CQ) to compensate for flight-time skew. A built-in PLL ensures precise data placement, and self-timed writes guarantee deterministic write completion within one clock cycle.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36 configuration)
Max Clock Frequency333 MHz - enables 666 MT/s DDR data rate per port
Read Latency1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable for system timing optimization
Core Supply Voltage1.8 V ±0.1 V - defines minimum power rail stability requirement
I/O Supply Range1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V HSTL systems
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density PCB layout
Burst LengthFour 36-bit words per access - reduces address bus toggling frequency by 4×

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputs36-bit parallel data sampled on rising edge of K clock during active write
Q[35:0]Synchronous read data outputs36-bit parallel data driven on rising edges of C/C clocks; tristated when RPS deasserted
A[18:0]Multiplexed address inputs19-bit address shared by read/write ports; latched on rising edge of K clock
RPSRead port select (active LOW)Enables read transaction; output drivers tristate automatically upon deassertion
WPSWrite port select (active LOW)Enables write transaction; D[35:0] ignored when deasserted
BWS[3:0]Byte write selects (active LOW)Selects four 9-bit bytes for partial writes; preserves unselected byte contents
C, COutput data clocksDual-edge deskew pair for timing-critical read data capture at controller
CQ, CQEcho clocksReplica of C/C signals routed to controller to simplify high-speed data sampling
K, KInput clocksPositive/negative clocks for synchronous input capture; only rising edges used
DOFFRead latency controlHIGH → 1.5-cycle latency; LOW → 1-cycle latency - configures internal pipeline depth

Key Features

FeatureDesign Value
Separate read/write portsEliminates bus turnaround overhead, enabling true concurrent memory access
Four-word burst architectureReduces effective address bus frequency by factor of 4, easing routing and timing closure
DDR interfaces on both portsDelivers 666 MT/s bandwidth per port at 333 MHz clock, doubling throughput vs. SDR
Programmable read latency (DOFF)Allows system-level trade-off between latency and timing margin via single pin
JTAG 1149.1 test access portEnables boundary scan testing and in-system diagnostics without additional test hardware
Variable-drive HSTL outputsAdjustable drive strength matches trace impedance, minimizing signal integrity issues

Applications

High-Speed Packet BufferingNetwork Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: Dedicated QDR II SRAM providing simultaneous read (for forwarding decisions) and write (for packet arrival) at line rate.

Use Value: 666 MT/s DDR bandwidth per port sustains full-duplex 10 GbE+ traffic without bottlenecks.

Use Scenario: Serving as central buffer memory in modular chassis-based routers with distributed line cards.

IC Role / Device Role / Timing Role: High-coherency shared memory accessed concurrently by multiple ASICs via dedicated read/write buses.

Use Value: Full data coherency and zero-turnaround architecture prevent race conditions during parallel lookups and updates.

Telecom Baseband ProcessingTest Equipment Pattern Memory

Use Scenario: Holding channelization codes and symbol buffers in 4G/LTE baseband units.

IC Role / Device Role / Timing Role: Low-latency memory supporting real-time FFT/IFFT and modulation/demodulation pipelines.

Use Value: Configurable 1-cycle/1.5-cycle read latency aligns with strict DSP scheduling deadlines.

Use Scenario: Storing stimulus and expected response vectors in high-speed automated test equipment (ATE).

IC Role / Device Role / Timing Role: Deterministic-access memory delivering synchronized pattern data to multiple DUT channels.

Use Value: Echo clocks (CQ/CQ) enable precise, skew-compensated data capture across 32+ parallel test pins.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T36150Same 2M × 36 density, 333 MHz max, but uses 1.5 V core (VDD = 1.5 V); no DOFF latency controlLacks programmable read latency; requires fixed 1-cycle timing modelChoose when system design mandates 1.5 V core supply and simplified latency model
ISSI IS61QW25636A256K × 36 (9-Mbit), 200 MHz max, 1.8 V core/I/O; no echo clocks or PLLLower bandwidth and density; lacks advanced timing features for >10 GbE systemsChoose for cost-sensitive, lower-bandwidth applications where echo clock support is unnecessary

Compared with IDT72T36150 and IS61QW25636A, the CY7C1515KV18 uniquely delivers 72-Mbit density at 333 MHz with configurable latency and echo-clock–assisted data capture-critical for next-generation packet processing and test instrumentation.

Availability

CY7C1515KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom baseband processing requiring stable component supply and long-term industrial availability.

Supply support for CY7C1515KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

The QDR® II SRAM product line targets high-bandwidth, low-latency memory subsystems in communications infrastructure-specifically engineered to replace legacy SRAMs in packet-forwarding engines and protocol accelerators.

FAQ

What is the function of the DOFF pin on CY7C1515KV18?

The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved setup/hold timing margins; when LOW, it selects 1-cycle latency for minimal delay. This setting directly controls internal pipeline staging and must be held stable during operation.

Does CY7C1515KV18 support single-ended clocking?

No. The device requires differential clock pairs (K/K and C/C) for proper operation. Although only the rising edge of K is used for input sampling, both K and K must be driven with complementary signals. Similarly, C and C are required for valid read data output timing and echo clock generation.

How does byte write select (BWS) work in 2M × 36 mode?

In CY7C1515KV18, BWS[3:0] independently controls four 9-bit bytes within the 36-bit word: BWS0 enables D[8:0], BWS1 enables D[17:9], BWS2 enables D[26:18], and BWS3 enables D[35:27]. Each is active LOW and sampled synchronously with data on the K clock edge.

Is the 165-ball FBGA package lead-free?

Yes. The CY7C1515KV18-300BZI variant is specified with Pb-free (RoHS-compliant) packaging. The 'BZI' suffix denotes industrial temperature range (–40°C to +85°C) and lead-free FBGA construction, verified per Cypress's ordering code definitions in Document 001-00435 Rev. *W.

CY7C1515KV18-300BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1515KV18-300BZI FAQ

1.How can I place an order for CY7C1515KV18-300BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1515KV18-300BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1515KV18-300BZI reliable?

The price and inventory of CY7C1515KV18-300BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-300BZI is usually 5 days.

3.What payment methods are accepted for CY7C1515KV18-300BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515KV18-300BZI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1515KV18-300BZI?

CY7C1515KV18-300BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1515KV18-300BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1515KV18-300BZI?

For technical support, including CY7C1515KV18-300BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-300BZI requirements.

6.How does Aetrix verify that CY7C1515KV18-300BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1515KV18-300BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-300BZI meets industry standards.

7.What is the process for return or replacement of CY7C1515KV18-300BZI?

All CY7C1515KV18-300BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-300BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1515KV18-300BZI part is unused and in its original packaging.

Return procedure for CY7C1515KV18-300BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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