Cypress Semiconductor Corp CY7C1515KV18-333BZC
- Part No.:
- CY7C1515KV18-333BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1515KV18-333BZC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,965
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Product details
Overview
CY7C1515KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 333 MHz clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces (666 MHz data rate), four-word burst architecture, and echo clocks (CQ/CQ) for high-speed system timing alignment. Used in network packet buffers and high-throughput switch fabric memory subsystems.
For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection criteria include its 2M × 36 × 4-word burst depth, dual-clock DDR timing (K/K and C/C), DOFF-controlled 1.5-cycle vs. 1-cycle read latency, HSTL-compatible output drive, and JTAG 1149.1 test access support.
Technical Context
The CY7C1515KV18 employs true dual-port QDR II architecture: independent read and write ports share one multiplexed 19-bit address bus but use separate control clocks (K/K for input, C/C for output) and dedicated data paths (D[35:0] inputs, Q[35:0] outputs). Its internal 512K × 36 array is replicated across four banks to enable concurrent access.
It integrates a PLL for precise data placement, supports programmable impedance via ZQ pin, and uses synchronous self-timed writes with byte write select (BWS[3:0]) enabling partial 36-bit word updates without read-modify-write. Echo clocks CQ/CQ align with output data edges to simplify capture at the controller.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s DDR data rate on both ports |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable for timing margin optimization |
| Core Supply Voltage | 1.8 V ±0.1 V - defines minimum power rail stability requirement for reliable operation |
| I/O Supply Range | 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V logic families |
| Burst Length | Four-word - reduces address bus toggling frequency by 4× versus single-word access |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density PCB layout |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Write data input bus | 36-bit synchronous input sampled on rising edge of K/K; supports full or partial (via BWS[3:0]) word writes |
| Q[35:0] | Read data output bus | 36-bit DDR output driven on rising edges of C/C; tristated when RPS is deasserted |
| A[18:0] | Multiplexed address bus | 19-bit address latched on rising edge of K; shared by read and write ports |
| RPS / WPS | Port select controls | Active-low synchronous enables for read/write ports; sampled on K rising edge |
| BWS[3:0] | Byte write select | Four active-low signals controlling 9-bit byte segments within 36-bit word; enables selective update |
| C / C, K / K | Dual differential clock inputs | K/K latch inputs; C/C clock outputs - eliminates skew between devices using echo clock alignment |
| CQ / CQ | Echo clocks | Output-aligned copies of C/C; used by controller to deskew data capture timing across multiple SRAMs |
| DOFF | Read latency mode select | High = 1.5-cycle latency (for tighter timing closure); Low = 1-cycle latency (for minimal latency) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent read and write operations without bus turnaround delay |
| Four-word burst architecture | Reduces effective address bus frequency by 75%, easing routing and timing closure |
| DDR interfaces on both ports | Delivers 666 MT/s throughput per port at 333 MHz clock - doubles bandwidth vs. SDR |
| JTAG 1149.1 test access port | Supports boundary scan testing and in-system programming without additional debug hardware |
| Programmable output impedance (ZQ) | Enables on-die termination calibration to match trace impedance - improves signal integrity |
Applications
| Network Packet Buffering | Switch Fabric Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer memory interfacing directly to SERDES-based switch ASICs. Use Value: 666 MT/s DDR throughput per port sustains full-duplex 100 Gbps+ switching fabric bandwidth with deterministic latency. | Use Scenario: Serving as shared memory for crossbar arbitration and cell queuing in modular chassis switches. IC Role / Device Role / Timing Role: Dual-port SRAM providing simultaneous read (scheduler lookup) and write (cell ingress) access. Use Value: Concurrent transaction capability eliminates arbitration stalls, improving average queue throughput by ≥35% over single-port alternatives. |
| Telecom Line Card Buffering | High-Speed Test Equipment Memory |
Use Scenario: Temporary storage of frame-aligned TDM or OTN overhead data in optical transport line cards. IC Role / Device Role / Timing Role: Burst-access memory synchronized to SONET/SDH frame clocks via K/C domain separation. Use Value: Four-word burst matches typical SONET STS-192 payload granularity, reducing address bus transitions by 4×. | Use Scenario: Capturing high-speed digital stimulus/response waveforms in ATE systems operating at >500 MHz sampling rates. IC Role / Device Role / Timing Role: Deep, low-latency memory buffer capturing parallel bus data aligned to echo clocks (CQ/CQ). Use Value: Echo clock outputs enable sub-100 ps capture window alignment across multi-SRAM test memory banks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615 | 36-bit QDR II+, 300 MHz max, 1.5 V core, no ZQ calibration | Lacks programmable impedance and echo clock outputs; requires external termination | Select when lower cost and legacy 1.5 V system compatibility outweigh advanced signal integrity features |
| ISSI IS61WV102436B | Synchronous SRAM, 1024K × 36, 166 MHz, single-port, 3.3 V I/O | No DDR, no dual-port, no burst - fundamentally different architecture and bandwidth profile | Only suitable for non-concurrent, lower-speed buffering where QDR II features are unnecessary |
Compared with IDT72T3615 and IS61WV102436B, CY7C1515KV18 delivers higher bandwidth (666 vs. 600/332 MT/s), integrated signal integrity features (ZQ, CQ), and true concurrency - making it optimal for next-gen networking and test equipment demanding deterministic latency and scalable memory bandwidth.
Availability
CY7C1515KV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, and telecom line card buffering requiring stable component supply across long-lifecycle deployments.
Supply support for CY7C1515KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.
The QDR II SRAM product line targets high-speed packet processing systems requiring deterministic latency, concurrent access, and DDR bandwidth - specifically engineered for switch fabric, router line cards, and test instrumentation.
FAQ
What is the function of the DOFF pin on CY7C1515KV18?
The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for improved setup/hold timing margins; when LOW, it enables 1-cycle latency for minimal access delay. This setting is sampled synchronously on the rising edge of the K clock and affects all subsequent read operations until changed.
How does the CY7C1515KV18 handle partial writes to a 36-bit word?
Partial writes are controlled by the four active-low byte write select signals BWS[3:0], each enabling one 9-bit segment of the 36-bit D[35:0] bus. When a BWS signal is deasserted, the corresponding 9-bit byte remains unaltered in memory - eliminating need for read-modify-write cycles and preserving data integrity in multi-threaded access scenarios.
Can CY7C1515KV18 operate with only a single clock domain?
Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise), simplifying system clocking. In this mode, data is latched and driven on the same clock edges, though maximum frequency is reduced versus dual-clock operation due to timing constraints on combined clock path routing and skew.
What is the purpose of the ZQ pin on CY7C1515KV18?
The ZQ pin connects to an external 240 Ω precision resistor to ground, enabling on-die impedance calibration of HSTL output drivers. This calibrates output drive strength and termination to match PCB trace impedance, reducing reflections and improving signal integrity at 666 MT/s data rates without requiring discrete termination resistors.
CY7C1515KV18-333BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1515KV18-333BZC FAQ
1.How can I place an order for CY7C1515KV18-333BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1515KV18-333BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1515KV18-333BZC reliable?
The price and inventory of CY7C1515KV18-333BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-333BZC is usually 5 days.
3.What payment methods are accepted for CY7C1515KV18-333BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515KV18-333BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1515KV18-333BZC?
CY7C1515KV18-333BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1515KV18-333BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1515KV18-333BZC?
For technical support, including CY7C1515KV18-333BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-333BZC requirements.
6.How does Aetrix verify that CY7C1515KV18-333BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1515KV18-333BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-333BZC meets industry standards.
7.What is the process for return or replacement of CY7C1515KV18-333BZC?
All CY7C1515KV18-333BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-333BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1515KV18-333BZC part is unused and in its original packaging.
Return procedure for CY7C1515KV18-333BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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