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Cypress Semiconductor Corp CY7C1515KV18-333BZI

Part No.:
CY7C1515KV18-333BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1515KV18-333BZI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,988

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Product details

Overview

CY7C1515KV18 from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II SRAM with four-word burst architecture, 333 MHz clock frequency, DDR interfaces on both read and write ports (666 MHz data rate), and separate independent read/write ports enabling concurrent transactions. It operates at 1.8 V core supply and supports 1.4–1.8 V I/O (VDDQ), and is used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection considerations include its 19-bit address bus, 36-bit bidirectional data width, echo clock (CQ/CQ) support for timing margin improvement, and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

The CY7C1515KV18 implements a synchronous pipelined QDR II architecture with fully independent read and write ports sharing a single multiplexed address bus. Address latching occurs on alternate rising edges of the K clock, and each access delivers a fixed four-word burst of 36-bit data.

It uses dual input clocks (K/K) for write control and dual output clocks (C/C) plus echo clocks (CQ/CQ) to minimize skew between controller and memory. The device integrates a PLL for precise data placement and supports programmable impedance via ZQ pin for HSTL-18 I/O compliance.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 2M × 36 (72 Mbit total); enables 36-bit parallel data path without external width expansion
Maximum Clock Frequency 333 MHz; defines maximum sustained transaction rate of 666 MT/s per port due to DDR operation
Burst Length Four-word burst; reduces effective address bus toggling frequency by 4× versus single-word access
Read Latency 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); determines minimum time from address valid to first valid output word
Core Supply Voltage 1.8 V ±0.1 V; requires tight regulation and dedicated LDO for stable internal timing and low power
I/O Supply Range VDDQ = 1.4 V to 1.8 V; supports interoperability with 1.5 V or 1.8 V system logic levels
Package 165-ball FBGA (13 × 15 × 1.4 mm); fine-pitch layout optimized for controlled-impedance routing and signal integrity

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant, with 0.8 mm ball pitch and standard HSTL-18 compatible I/O structure.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Write data inputs 36-bit synchronous data bus sampled on rising edge of K/K; supports byte-level write masking via BWS[3:0]
Q[35:0] Read data outputs 36-bit DDR outputs clocked by C/C; tristated when RPS is deasserted; echo clocks (CQ/CQ) align capture timing at controller
A[18:0] Address inputs 19-bit multiplexed address bus latched on rising edge of K; sufficient for full 2M depth addressing
RPS / WPS Port select controls Active-low synchronous enables for read/write ports; enable timing referenced to K clock edge
BWS[3:0] Byte write selects Four independent active-low signals controlling 8-bit segments of D[35:0]; allows partial writes without read-modify-write
C / C, CQ / CQ Output timing clocks C/C drive Q[35:0] outputs; CQ/CQ are delayed copies for source-synchronous capture at controller with flight-time compensation
K / K Input timing clocks Positive/negative differential clocks for all synchronous inputs; only rising edge of K used for sampling
ZQ Impedance calibration Connects to external 240 Ω resistor to ground; calibrates output driver strength and termination for HSTL-18 compliance

Key Features

Feature Design Value
Separate read/write ports Enables true concurrent read and write operations without bus turnaround delay or arbitration overhead
Four-word burst + DDR Delivers 288-bit data per clock cycle (36 × 4) at 666 MT/s, achieving 24 Gbps aggregate bandwidth
Echo clock (CQ/CQ) support Provides source-synchronous timing reference for controller's data capture, relaxing PCB trace length matching requirements
Programmable output impedance ZQ calibration ensures consistent HSTL-18 driver strength across voltage/temperature, reducing signal integrity margin loss
JTAG 1149.1 test interface Enables boundary scan testing of interconnects in dense FBGA layouts without physical probe access

Applications

High-Speed Network Switch Buffering Telecom Line Card Packet Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switching ASICs.

IC Role / Device Role / Timing Role: Dedicated QDR II SRAM serving as low-latency, concurrent-access buffer between line-rate traffic and forwarding engine.

Use Value: 1.5-cycle read latency and 333 MHz clock enable sub-5 ns access times, meeting strict switch fabric timing budgets.

Use Scenario: Temporary storage of voice-over-IP (VoIP) payload fragments during jitter buffering and packet reassembly.

IC Role / Device Role / Timing Role: Dual-port memory providing simultaneous write (from PHY) and read (to DSP) of time-aligned audio frames.

Use Value: Independent read/write ports eliminate contention, supporting full-duplex 10 Gbps line card throughput without stall cycles.

Baseband Processing in 4G/LTE Radio Units Real-Time Video Frame Buffering

Use Scenario: Holding intermediate FFT/IFFT results and channel estimation data in massive MIMO baseband processors.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory interfacing directly with FPGA-based signal processing pipelines.

Use Value: 72-Mbit density and 36-bit width match typical 12-bit × 3-sample complex data formats, minimizing external width expansion.

Use Scenario: Frame store for uncompressed 1080p60 video streams in broadcast-grade encoder/decoder modules.

IC Role / Device Role / Timing Role: Sustained burst memory supporting simultaneous 36-bit pixel write (sensor path) and 36-bit pixel read (encoder path).

Use Value: Four-word burst reduces address bus activity by 75%, easing timing closure on 160+ MHz pixel clocks in FPGA-based systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150 2M × 36 QDR II+, 366 MHz max, 1.5 V core, no ZQ calibration, different pinout Lacks echo clocks and programmable impedance; requires tighter board-level timing tuning Prefer when legacy IDT ecosystem integration or lower core voltage is required, but expect increased layout sensitivity
ISSI IS61WV102436B 1M × 36 QDR II, 250 MHz max, 1.8 V core, no CQ/CQ, no JTAG Half the density and bandwidth; lacks echo clocks and boundary scan Only suitable for cost-sensitive, lower-throughput designs where 72-Mbit capacity and 333 MHz operation are not mandatory

Compared with IDT72T36150 and IS61WV102436B, the CY7C1515KV18 provides higher bandwidth (24 Gbps vs. 22 Gbps and 18 Gbps), integrated echo clocks for robust high-speed capture, and ZQ calibration for consistent signal integrity-making it optimal for new 10G+ networking and telecom designs.

Availability

CY7C1515KV18 is available at Aetrix Electronics and suitable for high-speed network switch buffering, telecom line card packet memory, and baseband processing applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for CY7C1515KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR® II SRAM product line was designed specifically for ultra-low-latency, high-throughput memory subsystems in networking infrastructure, where deterministic concurrent read/write performance and signal integrity at >600 MT/s are critical.

FAQ

What is the function of the DOFF pin on CY7C1515KV18?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin in high-speed systems; when LOW, it reverts to 1-cycle latency for minimal access delay. This setting is sampled synchronously on the rising edge of the K clock during initialization and remains static during operation.

Can CY7C1515KV18 operate with only a single clock domain?

Yes. The device supports single-clock-mode operation where the same K clock drives both input and output registers-eliminating need for separate C/C clocks. In this mode, Q[35:0] outputs are clocked by K/K instead of C/C, simplifying clock tree design at the cost of reduced timing flexibility and no echo clock support.

How does the ZQ pin affect system-level signal integrity?

The ZQ pin connects to an external 240 Ω resistor to ground and initiates on-die impedance calibration. This adjusts output driver strength and ODT (on-die termination) to match HSTL-18 specifications across process/voltage/temperature, ensuring consistent rise/fall times and reducing reflections on high-speed traces without requiring external termination resistors.

Is CY7C1515KV18 pin-compatible with other devices in the CY7C15xxKV18 family?

No. Although all share the same 165-ball FBGA package footprint, pin assignments differ significantly across CY7C1526KV18 (×9), CY7C1513KV18 (×18), and CY7C1515KV18 (×36) due to differing data bus widths, byte-select configurations, and address bit counts-requiring unique PCB layouts for each variant.

CY7C1515KV18-333BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1515KV18-333BZI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1515KV18-333BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1515KV18-333BZI reliable?

The price and inventory of CY7C1515KV18-333BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-333BZI is usually 5 days.

3.What payment methods are accepted for CY7C1515KV18-333BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515KV18-333BZI transactions.

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4.How is shipping managed for CY7C1515KV18-333BZI?

CY7C1515KV18-333BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1515KV18-333BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1515KV18-333BZI?

For technical support, including CY7C1515KV18-333BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-333BZI requirements.

6.How does Aetrix verify that CY7C1515KV18-333BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1515KV18-333BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-333BZI meets industry standards.

7.What is the process for return or replacement of CY7C1515KV18-333BZI?

All CY7C1515KV18-333BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-333BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1515KV18-333BZI part is unused and in its original packaging.

Return procedure for CY7C1515KV18-333BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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