Cypress Semiconductor Corp CY7C1515KV18-333BZXI
- Part No.:
- CY7C1515KV18-333BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1515KV18-333BZXI.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1515KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 333 MHz clock frequency, 1.8 V core supply, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It implements separate read/write DDR ports, four-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering systems.
For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection criteria include its 666 MHz effective data rate, DOFF-configurable 1.5-cycle vs. 1-cycle read latency, 36-bit wide synchronous interface, and support for depth expansion via RPS/WPS and BWS[3:0] controls.
Technical Context
This QDR II SRAM uses dual independent DDR interfaces: write data sampled on rising edges of K/K clocks, read data driven on rising edges of C/C clocks. Its internal 512K × 36 memory array is accessed via a shared 19-bit address bus latched on K-clock edges, enabling concurrent read/write transactions without bus turnaround.
The device integrates a PLL for precise data placement, supports programmable impedance via ZQ pin, and features JTAG 1149.1 boundary scan. Echo clocks (CQ/CQ) align with output data to simplify timing closure at 666 MHz, while DOFF pin selects between 1.5-cycle (HIGH) and 1-cycle (LOW) read latency modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s effective throughput per port |
| Data Bus Width | 36-bit bidirectional I/O - supports high-bandwidth packet payload storage |
| Read Latency | Selectable: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - compatible with 1.5 V/1.8 V systems |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch, thermally optimized for high-speed routing |
| Interface Standard | HSTL Class I - ensures signal integrity at 666 MHz DDR rates |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit parallel input sampled on K/K rising edges; supports byte-level writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit parallel output driven on C/C rising edges; tristated when RPS deasserted |
| RPS / WPS | Read/Write port select | Active-low enables independent read or write port access; enables depth expansion |
| BWS[3:0] | Byte write select | Four active-low signals controlling 8-bit segments of D[35:0]; preserves unwritten bytes |
| C / C | Output data clock pair | Differential clock pair for read data capture; minimizes skew across 36-bit bus |
| CQ / CQ | Echo clock outputs | Source-synchronous clocks aligned with Q[35:0] edges; simplifies high-speed receiver design |
| K / K | Input clock pair | Differential clock pair for address/data capture; used for write operations and address latching |
| DOFF | Read latency mode control | High = 1.5-cycle latency (optimized for timing margin); Low = 1-cycle latency (maximizes throughput) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write DDR ports | Eliminates bus turnaround overhead, enabling true concurrent access for full-duplex packet processing |
| Four-word burst architecture | Reduces address bus switching frequency by 4× versus single-word access - lowers EMI and routing complexity |
| Echo clocks (CQ/CQ) | Provide source-synchronous timing reference for all 36 Q-bits, relaxing PCB trace length matching requirements |
| Programmable drive strength (ZQ) | Enables dynamic impedance calibration to match transmission line characteristics and suppress reflections |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant testing and debug of high-density interconnects without physical probe access |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
Use Scenario: Storing ingress/egress packet payloads in 10G/25G Ethernet line cards where deterministic latency and zero bus turnaround are required. IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking, low-latency first-in-first-out (FIFO) buffer with simultaneous read/write capability. Use Value: 666 MT/s per port sustains full line-rate traffic; 1.5-cycle latency mode ensures timing closure in multi-chip interconnects. | Use Scenario: Serving as distributed lookup table memory in modular chassis-based switches with distributed forwarding engines. IC Role / Device Role / Timing Role: Shared memory resource accessed concurrently by multiple ASICs for header parsing and forwarding decision caching. Use Value: Independent RPS/WPS and BWS[3:0] enable precise memory partitioning and atomic updates across 36-bit wide entries. |
| Telecom Baseband Processing | Test Equipment Pattern Memory |
Use Scenario: Holding channelized frame buffers in LTE/5G baseband units requiring strict jitter tolerance and burst-aligned data access. IC Role / Device Role / Timing Role: Synchronous pipelined memory interfacing directly with FPGA-based digital front-end logic. Use Value: C/C and CQ/CQ pairs provide sub-150 ps skew control - critical for meeting 3GPP timing alignment specs. | Use Scenario: Storing high-speed stimulus/response patterns in automated test equipment (ATE) for SoC validation at >500 MHz. IC Role / Device Role / Timing Role: Deterministic-access pattern generator memory synchronized to system master clock domain. Use Value: DOFF-selectable latency allows trade-off between setup margin (1.5-cycle) and maximum test vector density (1-cycle). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615 | 36-bit QDR II+ (400 MHz max), 1.5 V core, different pinout and AC timing | Higher frequency but requires redesign of clock tree and layout; no DOFF latency selection | Choose for bandwidth-critical upgrades where board re-spin is acceptable |
| ISSI IS61WV102436B | 36-bit sync SRAM (200 MHz), single clock domain, no echo clocks or burst mode | Lacks concurrent read/write and DDR interface - limits throughput to ~400 MB/s vs. 2.4 GB/s | Choose only for cost-sensitive, lower-throughput designs where QDR features are unused |
Compared with IDT72T3615 and IS61WV102436B, CY7C1515KV18 uniquely balances 333 MHz operation with flexible latency (DOFF), echo-clock timing aid, and mature QDR II ecosystem support - making it optimal for field-deployed telecom and networking hardware requiring long-term supply stability.
Availability
CY7C1515KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom baseband processing requiring stable component supply over extended product lifecycles.
Supply support for CY7C1515KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
The QDR II SRAM product line was engineered specifically for deterministic, low-latency, high-throughput memory access in networking infrastructure - addressing the need for concurrent read/write without bus contention in packet-forwarding ASICs and FPGAs.
FAQ
What is the function of the DOFF pin on CY7C1515KV18?
The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin in high-skew layouts; when LOW, it selects 1-cycle latency for maximum throughput. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.
How does the CY7C1515KV18 handle byte-level writes?
Byte-level writes are controlled by four active-low BWS[3:0] inputs, each selecting an 8-bit segment of the 36-bit D[35:0] bus. When a BWS signal is deasserted, the corresponding byte remains unaltered in memory. All BWS signals are sampled on the same K/K clock edge as the write data, enabling atomic partial-word updates without read-modify-write cycles.
Can CY7C1515KV18 operate with only a single clock source?
Yes - the device supports single-clock-domain operation using only the K clock for both input capture and output driving (with C tied to K). In this mode, Q[35:0] data is driven on K's rising edge, and CQ echoes K. However, dual-clock operation (K/K for inputs, C/C for outputs) is required to achieve full 333 MHz performance and minimize skew in high-speed systems.
What is the purpose of the ZQ pin?
The ZQ pin connects to an external 240 Ω precision resistor to ground, enabling on-die termination impedance calibration. This adjusts HSTL output driver strength to match PCB trace impedance, reducing signal reflections and improving eye diagram integrity at 666 MHz DDR rates - critical for reliable operation in dense, high-speed memory subsystems.
CY7C1515KV18-333BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1515KV18-333BZXI FAQ
1.How can I place an order for CY7C1515KV18-333BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1515KV18-333BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1515KV18-333BZXI reliable?
The price and inventory of CY7C1515KV18-333BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-333BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1515KV18-333BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515KV18-333BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1515KV18-333BZXI?
CY7C1515KV18-333BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1515KV18-333BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1515KV18-333BZXI?
For technical support, including CY7C1515KV18-333BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-333BZXI requirements.
6.How does Aetrix verify that CY7C1515KV18-333BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1515KV18-333BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-333BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1515KV18-333BZXI?
All CY7C1515KV18-333BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-333BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1515KV18-333BZXI part is unused and in its original packaging.
Return procedure for CY7C1515KV18-333BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1515KV18-333BZXI Tags

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