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Cypress Semiconductor Corp CY7C1518AV18-250BZI

Part No.:
CY7C1518AV18-250BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1518AV18-250BZI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:965

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Product details

Overview

CY7C1518AV18 from Cypress Semiconductor is a 72-Mbit (4 M × 18) DDR-II synchronous SRAM with two-word burst architecture, 300-MHz clock support, 1.8-V core supply, and HSTL I/O. It operates with 1.5-cycle read latency when DLL is enabled and supports echo clocks (CQ/CQ) for precise high-speed data capture in networking and telecom buffer applications.

For engineers reviewing the CY7C1518AV18 datasheet, CY7C1518AV18 pinout, CY7C1518AV18 application, or CY7C1518AV18 equivalent, key selection criteria include DDR-II timing compliance, 165-ball FBGA package compatibility, dual-clock (K/K and C/C) interface requirements, and JTAG 1149.1 test port integration for system-level validation.

Technical Context

This SRAM implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K/K clocks and registering write data on both K and K edges. Read data is output synchronously on C/C (or K/K in single-clock mode), tightly aligned to echo clocks CQ/CQ for zero-skew capture.

The device integrates a delay-locked loop (DLL) for accurate data placement, supports programmable output impedance via ZQ calibration, and provides byte-write select (BWS0/BWS1) for granular 9-bit writes. JTAG 1149.1 boundary scan enables production testability without requiring external test fixtures.

Key Specifications

ParameterValue and Actual Design Meaning
Density72 Mbit (4 M × 18 organization)
Max Clock Frequency300 MHz - enables 600 MT/s DDR data rate
Read Latency1.5 cycles with DLL enabled; 1 cycle with DLL disabled
Core Supply1.8 V - defines logic threshold and power envelope for low-voltage system integration
I/O StandardHSTL Class I - ensures signal integrity at >200 MHz with controlled drive strength
Package165-ball FBGA (15 × 17 × 1.4 mm) - supports high-density PCB routing and thermal dissipation
Burst LengthTwo-word - halves effective address bus toggling frequency versus single-word access

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant, with 1.0 mm ball pitch.

Pin/TerminalCircuit RoleDesign Meaning
DQ[17:0]Synchronous bidirectional data I/OShares pins for read/write; driven on C/C rising edges during reads; sampled on K/K rising edges during writes
K / KPositive/negative input clocksCapture all synchronous inputs (address, R/W, BWS); define burst timing and pipeline depth
C / CPositive/negative output data clocksControl timing of Q outputs; used with CQ/CQ to deskew flight time across multi-device memory subsystems
CQ / CQOutput echo clocks referenced to C/CFree-running, phase-aligned copies of C/C - enable source-synchronous latch at controller without board-level skew compensation
ZQOutput impedance calibration inputConnects to external resistor to ground to set output driver impedance to 0.2 × RQ; critical for HSTL signal integrity
DOFFDLL disable controlActive-low input; forces DDR-I timing mode (1-cycle latency) and limits max frequency to 167 MHz

Key Features

FeatureDesign Value
Two-word burst architectureReduces required address transitions by 50% per access, lowering bus switching noise and controller overhead
Delay-locked loop (DLL)Eliminates data-eye closure due to clock-to-Q variation, enabling reliable 600 MT/s operation at 300 MHz
Echo clock outputs (CQ/CQ)Provide controller-side reference for source-synchronous data capture without trace-length matching constraints
Programmable HSTL output driveAdjusts output impedance via ZQ calibration to match 50 Ω–75 Ω system buses, minimizing reflections
JTAG 1149.1 test access portEnables boundary scan testing of interconnects and SRAM I/Os without physical probe access

Applications

High-Speed Packet BufferingBaseband Processing Memory

Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in telecom line cards before classification or forwarding.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfaced to FPGA-based traffic managers using DDR-II protocol.

Use Value: Two-word burst and echo clocks reduce controller timing margin pressure, enabling deterministic 600 MT/s throughput with minimal FIFO depth.

Use Scenario: Holding intermediate FFT or channel estimation results in LTE/5G baseband processing units.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as ping-pong buffer between DSP cores and hardware accelerators, clocked at 300 MHz with DLL-enabled timing.

Use Value: 1.5-cycle read latency and HSTL I/O ensure tight synchronization with multi-core baseband processors, avoiding pipeline stalls.

Network Processor Lookaside MemoryIndustrial Real-Time Control Buffer

Use Scenario: Supporting TCAM-assisted packet lookup engines in enterprise switches by caching flow state and metadata.

IC Role / Device Role / Timing Role: Low-latency, burst-capable memory mapped directly to network processor AXI or PLB bus with DDR-II timing handshake.

Use Value: Byte-write select (BWS0/BWS1) allows atomic updates of 9-bit status fields without full-word overwrite, preserving coherency.

Use Scenario: Capturing synchronized sensor streams (e.g., motor current/voltage feedback) in servo drives with µs-level jitter tolerance.

IC Role / Device Role / Timing Role: Deterministic-access memory buffer between ADC interface logic and real-time MCU, operating in DLL-off DDR-I mode at 167 MHz for robustness.

Use Value: DOFF pin enables fail-safe fallback to 1-cycle latency mode under voltage/temp stress, maintaining hard real-time deadlines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR-II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS45S32800J-3BLI32-Mbit (2 M × 16), 200 MHz max, no DLL, single-ended clocks onlyLacks echo clocks and DLL; requires tighter board layout for timing closureLower-cost option where bandwidth < 400 MT/s and layout constraints allow manual skew management
MT47H64M16HR-3:G1-Gbit DDR2 SDRAM, 400 MHz, 1.8-V, but asynchronous refresh and higher latencyRequires refresh controller and suffers 12+ cycle read latency vs. SRAM's 1.5-cycle predictabilityOnly viable if system can tolerate non-deterministic latency and has DRAM-compatible controller

Compared with IS45S32800J-3BLI and MT47H64M16HR-3:G, CY7C1518AV18 delivers deterministic sub-2-cycle latency, built-in DLL for timing margin recovery, and echo clocks for simplified high-speed capture-critical for real-time packet buffering and baseband processing where jitter and setup/hold violations must be eliminated.

Availability

CY7C1518AV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, baseband processing memory, network processor lookaside memory, and industrial real-time control buffer applications requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1518AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, computing, and industrial systems, with focus on signal integrity and timing-critical applications.

CY7C1518AV18 belongs to Cypress's DDR-II SRAM product line, engineered specifically for deterministic, low-latency, high-throughput buffering in telecom infrastructure and real-time digital signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1518AV18?

The DOFF (DLL Turn Off) pin is an active-low input that disables the internal delay-locked loop. When pulled low, the device reverts to DDR-I timing with 1-cycle read latency and a maximum operating frequency of 167 MHz. This mode is used for system-level timing margin testing or fallback operation under voltage/temperature stress, and requires updated AC timing parameters from the datasheet's DLL-off section.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external resistor to ground (typically 240 Ω) to calibrate the output driver impedance to 0.2 × RQ, resulting in ~48 Ω for standard HSTL termination. This calibration ensures consistent signal rise/fall times and minimizes reflections on 50 Ω transmission lines. Leaving ZQ unconnected or tying it to GND violates specifications and causes undefined output impedance behavior.

Can CY7C1518AV18 operate without C and C clocks?

Yes - the device supports single-clock mode where K and K serve as both input and output clocks. In this configuration, read data is driven on K/K edges instead of C/C, and echo clocks CQ/CQ are generated relative to K/K. However, this sacrifices the flight-time deskewing capability provided by independent C/C, limiting maximum reliable data rate to ~250 MHz in typical layouts.

What is the role of BWS0 and BWS1 in write operations?

BWS0 and BWS1 are active-low byte write select inputs that control which 9-bit segments of DQ[17:0] are written during a burst. BWS0 governs DQ[8:0], BWS1 governs DQ[17:9]. When asserted, they enable writing to their respective byte lanes; when deasserted, those bits retain prior values. This enables atomic partial-word updates essential for status register maintenance in real-time control applications.

CY7C1518AV18-250BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1518AV18-250BZI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1518AV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1518AV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518AV18-250BZI is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1518AV18-250BZI?

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All CY7C1518AV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518AV18-250BZI meets industry standards.

7.What is the process for return or replacement of CY7C1518AV18-250BZI?

All CY7C1518AV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518AV18-250BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1518AV18-250BZI part is unused and in its original packaging.

Return procedure for CY7C1518AV18-250BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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