Cypress Semiconductor Corp CY7C1518AV18-250BZI
- Part No.:
- CY7C1518AV18-250BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1518AV18-250BZI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1518AV18 from Cypress Semiconductor is a 72-Mbit (4 M × 18) DDR-II synchronous SRAM with two-word burst architecture, 300-MHz clock support, 1.8-V core supply, and HSTL I/O. It operates with 1.5-cycle read latency when DLL is enabled and supports echo clocks (CQ/CQ) for precise high-speed data capture in networking and telecom buffer applications.
For engineers reviewing the CY7C1518AV18 datasheet, CY7C1518AV18 pinout, CY7C1518AV18 application, or CY7C1518AV18 equivalent, key selection criteria include DDR-II timing compliance, 165-ball FBGA package compatibility, dual-clock (K/K and C/C) interface requirements, and JTAG 1149.1 test port integration for system-level validation.
Technical Context
This SRAM implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K/K clocks and registering write data on both K and K edges. Read data is output synchronously on C/C (or K/K in single-clock mode), tightly aligned to echo clocks CQ/CQ for zero-skew capture.
The device integrates a delay-locked loop (DLL) for accurate data placement, supports programmable output impedance via ZQ calibration, and provides byte-write select (BWS0/BWS1) for granular 9-bit writes. JTAG 1149.1 boundary scan enables production testability without requiring external test fixtures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (4 M × 18 organization) |
| Max Clock Frequency | 300 MHz - enables 600 MT/s DDR data rate |
| Read Latency | 1.5 cycles with DLL enabled; 1 cycle with DLL disabled |
| Core Supply | 1.8 V - defines logic threshold and power envelope for low-voltage system integration |
| I/O Standard | HSTL Class I - ensures signal integrity at >200 MHz with controlled drive strength |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - supports high-density PCB routing and thermal dissipation |
| Burst Length | Two-word - halves effective address bus toggling frequency versus single-word access |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant, with 1.0 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data I/O | Shares pins for read/write; driven on C/C rising edges during reads; sampled on K/K rising edges during writes |
| K / K | Positive/negative input clocks | Capture all synchronous inputs (address, R/W, BWS); define burst timing and pipeline depth |
| C / C | Positive/negative output data clocks | Control timing of Q outputs; used with CQ/CQ to deskew flight time across multi-device memory subsystems |
| CQ / CQ | Output echo clocks referenced to C/C | Free-running, phase-aligned copies of C/C - enable source-synchronous latch at controller without board-level skew compensation |
| ZQ | Output impedance calibration input | Connects to external resistor to ground to set output driver impedance to 0.2 × RQ; critical for HSTL signal integrity |
| DOFF | DLL disable control | Active-low input; forces DDR-I timing mode (1-cycle latency) and limits max frequency to 167 MHz |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces required address transitions by 50% per access, lowering bus switching noise and controller overhead |
| Delay-locked loop (DLL) | Eliminates data-eye closure due to clock-to-Q variation, enabling reliable 600 MT/s operation at 300 MHz |
| Echo clock outputs (CQ/CQ) | Provide controller-side reference for source-synchronous data capture without trace-length matching constraints |
| Programmable HSTL output drive | Adjusts output impedance via ZQ calibration to match 50 Ω–75 Ω system buses, minimizing reflections |
| JTAG 1149.1 test access port | Enables boundary scan testing of interconnects and SRAM I/Os without physical probe access |
Applications
| High-Speed Packet Buffering | Baseband Processing Memory |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in telecom line cards before classification or forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfaced to FPGA-based traffic managers using DDR-II protocol. Use Value: Two-word burst and echo clocks reduce controller timing margin pressure, enabling deterministic 600 MT/s throughput with minimal FIFO depth. | Use Scenario: Holding intermediate FFT or channel estimation results in LTE/5G baseband processing units. IC Role / Device Role / Timing Role: Synchronous SRAM acting as ping-pong buffer between DSP cores and hardware accelerators, clocked at 300 MHz with DLL-enabled timing. Use Value: 1.5-cycle read latency and HSTL I/O ensure tight synchronization with multi-core baseband processors, avoiding pipeline stalls. |
| Network Processor Lookaside Memory | Industrial Real-Time Control Buffer |
Use Scenario: Supporting TCAM-assisted packet lookup engines in enterprise switches by caching flow state and metadata. IC Role / Device Role / Timing Role: Low-latency, burst-capable memory mapped directly to network processor AXI or PLB bus with DDR-II timing handshake. Use Value: Byte-write select (BWS0/BWS1) allows atomic updates of 9-bit status fields without full-word overwrite, preserving coherency. | Use Scenario: Capturing synchronized sensor streams (e.g., motor current/voltage feedback) in servo drives with µs-level jitter tolerance. IC Role / Device Role / Timing Role: Deterministic-access memory buffer between ADC interface logic and real-time MCU, operating in DLL-off DDR-I mode at 167 MHz for robustness. Use Value: DOFF pin enables fail-safe fallback to 1-cycle latency mode under voltage/temp stress, maintaining hard real-time deadlines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR-II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS45S32800J-3BLI | 32-Mbit (2 M × 16), 200 MHz max, no DLL, single-ended clocks only | Lacks echo clocks and DLL; requires tighter board layout for timing closure | Lower-cost option where bandwidth < 400 MT/s and layout constraints allow manual skew management |
| MT47H64M16HR-3:G | 1-Gbit DDR2 SDRAM, 400 MHz, 1.8-V, but asynchronous refresh and higher latency | Requires refresh controller and suffers 12+ cycle read latency vs. SRAM's 1.5-cycle predictability | Only viable if system can tolerate non-deterministic latency and has DRAM-compatible controller |
Compared with IS45S32800J-3BLI and MT47H64M16HR-3:G, CY7C1518AV18 delivers deterministic sub-2-cycle latency, built-in DLL for timing margin recovery, and echo clocks for simplified high-speed capture-critical for real-time packet buffering and baseband processing where jitter and setup/hold violations must be eliminated.
Availability
CY7C1518AV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, baseband processing memory, network processor lookaside memory, and industrial real-time control buffer applications requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1518AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, computing, and industrial systems, with focus on signal integrity and timing-critical applications.
CY7C1518AV18 belongs to Cypress's DDR-II SRAM product line, engineered specifically for deterministic, low-latency, high-throughput buffering in telecom infrastructure and real-time digital signal processing systems.
FAQ
What is the function of the DOFF pin on CY7C1518AV18?
The DOFF (DLL Turn Off) pin is an active-low input that disables the internal delay-locked loop. When pulled low, the device reverts to DDR-I timing with 1-cycle read latency and a maximum operating frequency of 167 MHz. This mode is used for system-level timing margin testing or fallback operation under voltage/temperature stress, and requires updated AC timing parameters from the datasheet's DLL-off section.
How does the ZQ pin affect output drive strength?
The ZQ pin connects to an external resistor to ground (typically 240 Ω) to calibrate the output driver impedance to 0.2 × RQ, resulting in ~48 Ω for standard HSTL termination. This calibration ensures consistent signal rise/fall times and minimizes reflections on 50 Ω transmission lines. Leaving ZQ unconnected or tying it to GND violates specifications and causes undefined output impedance behavior.
Can CY7C1518AV18 operate without C and C clocks?
Yes - the device supports single-clock mode where K and K serve as both input and output clocks. In this configuration, read data is driven on K/K edges instead of C/C, and echo clocks CQ/CQ are generated relative to K/K. However, this sacrifices the flight-time deskewing capability provided by independent C/C, limiting maximum reliable data rate to ~250 MHz in typical layouts.
What is the role of BWS0 and BWS1 in write operations?
BWS0 and BWS1 are active-low byte write select inputs that control which 9-bit segments of DQ[17:0] are written during a burst. BWS0 governs DQ[8:0], BWS1 governs DQ[17:9]. When asserted, they enable writing to their respective byte lanes; when deasserted, those bits retain prior values. This enables atomic partial-word updates essential for status register maintenance in real-time control applications.
CY7C1518AV18-250BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1518AV18-250BZI FAQ
1.How can I place an order for CY7C1518AV18-250BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1518AV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of CY7C1518AV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518AV18-250BZI is usually 5 days.
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5.How can I obtain technical support or documentation for CY7C1518AV18-250BZI?
For technical support, including CY7C1518AV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518AV18-250BZI requirements.
6.How does Aetrix verify that CY7C1518AV18-250BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1518AV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518AV18-250BZI meets industry standards.
7.What is the process for return or replacement of CY7C1518AV18-250BZI?
All CY7C1518AV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518AV18-250BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1518AV18-250BZI part is unused and in its original packaging.
Return procedure for CY7C1518AV18-250BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1518AV18-250BZI Tags

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