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Cypress Semiconductor Corp CY7C1518JV18-250BZC

Part No.:
CY7C1518JV18-250BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1518JV18-250BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:356

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Product details

Overview

CY7C1518JV18-250BZC from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous pipelined DDR II SRAM with 2-word burst architecture, 1.8V core supply, HSTL I/O, and 250 MHz maximum operating frequency (600 Mbps effective data rate). It uses dual input clocks (K/K) for precise DDR timing, echo clocks (CQ/CQ) for simplified high-speed data capture, and supports DLL-enabled 1.5-cycle read latency or DLL-off DDR I mode at up to 167 MHz.

For engineers reviewing the CY7C1518JV18-250BZC datasheet, CY7C1518JV18-250BZC pinout, CY7C1518JV18-250BZC application, or CY7C1518JV18-250BZC equivalent, key selection criteria include DDR II timing compliance, 165-ball FBGA (15 × 17 mm) mechanical fit, HSTL-18 I/O voltage tolerance (1.4V–1.8V), burst-aligned address incrementing, and JTAG 1149.1 test port support for system-level validation.

Technical Context

This SRAM implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K/K and registering write data on both K and K edges. Read data is output-synchronized to C/C (or K/K in single-clock mode), with CQ/CQ echo clocks phase-aligned to output clocks for deterministic data capture.

The device integrates a Delay Lock Loop (DLL) for sub-cycle data placement accuracy in DDR II mode, while DOFF pin control enables fallback to DDR I timing with 1-cycle latency. All synchronous inputs pass through edge-triggered registers; outputs are registered to C/C or K/K, and byte write select (BWS[1:0]) operates per 9-bit byte with independent enable per burst word.

Key Specifications

ParameterValue and Actual Design Meaning
Density72 Mbit (4M × 18 organization); supports depth expansion via chip select without wait states
Max Clock Frequency250 MHz (K/K input); enables 500 MT/s sustained throughput with 2-word burst
Data Rate600 Mbps effective (DDR: data transferred on both rising edges of 300 MHz-equivalent clock)
Read Latency1.5 cycles with DLL enabled; 1 cycle with DOFF = LOW - directly impacts pipeline depth in memory controllers
I/O StandardHSTL Class I (1.8V VDDQ); output drive strength adjustable via ZQ calibration to match 50 Ω trace impedance
Supply VoltagesVDD = 1.8V ±0.1V (core); VDDQ = 1.8V ±0.1V (I/O); separate power domains isolate switching noise
Package165-ball FBGA (15 mm × 17 mm × 1.4 mm); 0.8 mm ball pitch; RoHS-compliant Pb-free option available

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm footprint, 1.4 mm height, 0.8 mm ball pitch. Thermal pad exposed on underside for enhanced heat dissipation in high-throughput memory subsystems.

Pin/TerminalCircuit RoleDesign Meaning
DQ[17:0]Synchronous bidirectional data busShares physical pins for read/write; tristated automatically after read deselect; timing referenced to C/C or K/K
K / KPositive/negative input clock pairCaptures all synchronous inputs (address, R/W, LD, BWS); defines access initiation edge and write data latch points
C / CPositive/negative output clock pairControls read data output timing; enables board-level flight time deskewing across multiple SRAMs
CQ / CQOutput echo clocksFree-running, phase-aligned copies of C/C; eliminate need for external capture logic in FPGA/ASIC interfaces
LDLoad strobeActive-low synchronous signal defining start of bus cycle; required to latch address and R/W before burst execution
BWS[1:0]Byte write selectActive-low per-9-bit byte controls; allows partial-word writes without read-modify-write overhead
ZQImpedance calibration referenceConnects to external 240 Ω resistor to ground; sets output driver strength to 0.2 × RQ (≈48 Ω) for signal integrity
DOFFDLL disable controlActive-low pin; forces DDR I timing mode with 1-cycle latency and reduced max frequency (≤167 MHz)

Key Features

FeatureDesign Value
2-word burst architectureReduces address bus toggling by 50% versus single-word access; cuts controller address generation logic and routing congestion
Integrated Delay Lock Loop (DLL)Enables 1.5-cycle read latency with <±50 ps data-to-clock alignment at 250 MHz; eliminates external delay compensation circuits
HSTL-18 I/O with ZQ calibrationSupports 600 Mbps signaling with programmable drive strength; matches PCB trace impedance without external termination resistors
JTAG 1149.1 test access portEnables boundary-scan testing of SRAM interconnects and system-level debug without dedicated test pads or probes
Single-clock mode strapTying C/C HIGH at power-on configures device for K/K-only operation - simplifies clock tree design in cost-sensitive applications

Applications

High-Speed Network Packet BuffersTelecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with line-rate throughput.

IC Role / Device Role / Timing Role: Burst-accessed packet buffer with deterministic 1.5-cycle read latency; CQ/CQ echo clocks align data capture across multi-SRAM banks in ASIC/FPGA fabric.

Use Value: Enables zero-wait-state packet processing at OC-192 (10 Gbps) line rates using 250 MHz K clock and 600 Mbps DDR interface.

Use Scenario: Frame buffering in SONET/SDH add-drop multiplexers requiring low-jitter, high-reliability memory for jitter-tolerant timing recovery.

IC Role / Device Role / Timing Role: Synchronous pipelined SRAM providing glitch-free burst reads aligned to recovered line clock via DLL-synchronized CQ outputs.

Use Value: Maintains <100 ps clock-to-data skew across temperature (-40°C to +85°C), meeting GR-1244-CORE jitter transfer requirements.

Medical Imaging Data AcquisitionTest & Measurement Digitizer Memory

Use Scenario: Capturing real-time ultrasound or MRI raw sensor data streams at >500 MS/s aggregate bandwidth.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfaced to ADC controller via HSTL-18 bus; ZQ-calibrated outputs ensure clean eye diagrams at 600 Mbps.

Use Value: Delivers >4.5 GB/s sustained read/write bandwidth using four parallel CY7C1518JV18 devices in depth-expanded configuration.

Use Scenario: Deep-memory oscilloscopes capturing transient waveforms with nanosecond resolution over multi-millisecond windows.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory for real-time trigger detection and post-trigger readout; DOFF pin enables DDR I fallback during calibration sequences.

Use Value: Achieves <2 ns read access jitter (peak-to-peak) across full temperature range, critical for sub-ns timebase accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV102418BLL-15BLI1024K × 18, 1.8V, 15 ns async access; no DDR, no DLL, no echo clocksLimited to ≤133 MHz effective bandwidth; requires external FIFO logic for burst alignmentSelect only if system lacks DDR clock infrastructure and tolerates higher latency and lower throughput
MT48LC16M18A2P-6A:G256Mbit SDRAM (16M × 18), 3.3V, 166 MHz clock; requires refresh, command decoding, and bank managementHigher density but adds controller complexity; not pin-compatible; incompatible timing modelChoose only when >72 Mbit capacity is mandatory and system already implements SDRAM controller IP

Compared with IS61WV102418BLL-15BLI and MT48LC16M18A2P-6A:G, CY7C1518JV18-250BZC delivers deterministic DDR II timing, integrated DLL for sub-cycle alignment, and echo clocks that eliminate external capture logic - reducing BOM count and PCB layer count in high-speed memory subsystems.

Availability

CY7C1518JV18-250BZC is available at Aetrix Electronics and suitable for high-speed network packet buffers, telecom line card memory, and medical imaging data acquisition requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1518JV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications systems, with emphasis on signal integrity and timing precision.

The CY7C1518JV18 belongs to Cypress's DDR II synchronous SRAM product line, engineered specifically for applications demanding deterministic low-latency burst access, echo-clock–assisted data capture, and HSTL-18 compatibility in 10 Gbps-class systems.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin disables the internal Delay Lock Loop when pulled LOW. In this state, the device reverts to DDR I timing with 1-cycle read latency and a maximum operating frequency of 167 MHz. When DOFF is HIGH, DDR II mode activates with 1.5-cycle latency and full 250 MHz capability. The pin must be externally biased - floating is not allowed.

Can CY7C1518JV18-250BZC operate with only one clock pair instead of two?

Yes - by strapping C and C HIGH at power-on, the device enters single-clock mode where K/K control both input registration and output timing. All timing parameters remain identical to dual-clock operation, effectively eliminating clock skew between input and output domains without requiring matched trace lengths.

How does ZQ calibration impact signal integrity in high-speed layouts?

ZQ calibration adjusts the output driver impedance to match the system data bus (typically 50 Ω). With a 240 Ω resistor tied from ZQ to ground, the device sets its output strength to 48 Ω (0.2 × 240 Ω), minimizing reflections and ensuring clean eye diagrams at 600 Mbps. This eliminates need for external series termination resistors on DQ lines.

Is the 165-ball FBGA package compatible with standard reflow profiles for lead-free assembly?

Yes - the CY7C1518JV18-250BZC Pb-free variant complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports peak reflow temperatures up to 260°C. Its 0.8 mm ball pitch and thermal pad design are validated for standard Type 3 solder paste and convection reflow profiles used in high-volume manufacturing.

CY7C1518JV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1518JV18-250BZC FAQ

1.How can I place an order for CY7C1518JV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1518JV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1518JV18-250BZC reliable?

The price and inventory of CY7C1518JV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518JV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1518JV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1518JV18-250BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1518JV18-250BZC?

CY7C1518JV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1518JV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1518JV18-250BZC?

For technical support, including CY7C1518JV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518JV18-250BZC requirements.

6.How does Aetrix verify that CY7C1518JV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1518JV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518JV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1518JV18-250BZC?

All CY7C1518JV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518JV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1518JV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1518JV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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