Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C1518KV18-250BZXC

Part No.:
CY7C1518KV18-250BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1518KV18-250BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:599

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1518KV18-250BZXC from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous DDR-II SRAM with two-word burst architecture, 250 MHz maximum operating frequency, 1.8 V core supply, and HSTL I/O compatible with 1.5 V or 1.8 V IO supply. It delivers 900 MB/s peak bandwidth via double-data-rate transfers at 500 Mbps per pin and supports precise timing control using dual K/K input clocks and dual C/C output clocks for skew management in high-speed memory subsystems used in network packet buffers and baseband processing.

For engineers reviewing the CY7C1518KV18-250BZXC datasheet, CY7C1518KV18-250BZXC pinout, CY7C1518KV18-250BZXC application, or CY7C1518KV18-250BZXC equivalent, key selection considerations include its 1.5-cycle read latency (DOFF = HIGH), echo clock support (CQ/CQ), JTAG 1149.1 test access port, PLL-based data placement accuracy, and 165-ball FBGA package with 13 × 15 × 1.4 mm footprint.

Technical Context

The device implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K and K clocks. Write data is registered on both K and K edges, while read data is driven on rising edges of C and C - enabling deterministic 1.5-cycle latency when DOFF is HIGH or 1-cycle latency when DOFF is LOW.

It integrates echo clocks (CQ/CQ) synchronized to C/C for simplified system-level data capture, uses ZQ for programmable output impedance matching (0.2 × RQ), and features variable-drive HSTL outputs supporting expanded voltage range (1.4 V–VDD). All synchronous inputs pass through registers clocked by K/K; all outputs are registered to C/C (or K/K in single-clock mode).

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (4M × 18 configuration)
Max Clock Frequency 250 MHz - sets maximum sustained throughput and system timing budget
Data Rate 500 Mbps per DQ pin - enables 900 MB/s peak bandwidth with 18-bit bus
Read Latency 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - determines pipeline depth and controller wait-state requirements
Core Supply 1.8 V ± 0.1 V - defines power rail design and decoupling strategy
I/O Voltage Support 1.4 V–1.8 V HSTL - allows interoperability with 1.5 V or 1.8 V memory controllers
Package 165-ball FBGA (13 × 15 × 1.4 mm) - specifies PCB layout, thermal pad, and reflow profile

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, with exposed thermal pad.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data 18-bit DDR data bus; inputs sampled on K/K rising edges, outputs driven on C/C rising edges
K, K Positive/negative input clocks Edge-triggered clock pair for address/control/data capture; defines all synchronous timing references
C, C Positive/negative output clocks Deskew-capable clock pair for read data output; enables flight-time compensation across multi-device systems
CQ, CQ Echo clocks Free-running clocks synchronized to C/C; simplify controller data capture without per-pin delay tuning
LD Load enable Active-low signal initiating each burst transaction; must be asserted before R/W and address setup
R/W Read/write direction High = read, Low = write; sampled synchronously with LD on K edge to define access type
BWS[1:0] Byte write select Active-low controls DQ[8:0] (BWS0) and DQ[17:9] (BWS1); enables partial-word writes without read-modify-write
DOFF Latency mode select High = DDR-II mode (1.5-cycle latency), Low = DDR-I mode (1-cycle latency)
ZQ Impedance calibration Connects to external resistor to ground to tune output driver impedance to match board trace Z₀

Key Features

Feature Design Value
Two-word burst architecture Reduces external address bus toggling by 50% versus single-word SRAMs, lowering EMI and controller overhead
Programmable output impedance (ZQ) Enables dynamic on-die termination matching to PCB trace impedance without external resistors
Dual echo clocks (CQ/CQ) Eliminates need for per-SRAM input delay tuning at controller; simplifies high-speed DDR routing and timing closure
JTAG 1149.1 boundary scan Supports IEEE-compliant test access for production ICT and board-level diagnostics without additional test points
PLL-based data placement Ensures sub-cycle alignment between read data and C/C clocks, enabling reliable sampling at 500 Mbps

Applications

Network Packet Buffering Baseband Signal Processing

Use Scenario: Temporary storage of variable-length Ethernet/IP packets in Layer 2/3 switches and routers before forwarding or classification.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly with MAC or traffic manager ASICs via DDR interface.

Use Value: 250 MHz clock + 1.5-cycle latency enables deterministic 320 ns worst-case read turnaround, supporting 10 Gbps line-rate buffering.

Use Scenario: Real-time buffering of IQ samples between ADC/DAC and DSP in LTE/5G radio units.

IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as ping-pong memory for FFT/IFFT pipelines with precise clock-aligned data handoff.

Use Value: Echo clocks (CQ/CQ) eliminate inter-lane skew, allowing clean 500 Mbps sampling without per-channel deskew logic.

Industrial Motion Control Test & Measurement Equipment

Use Scenario: Storing position/velocity profiles and real-time servo loop coefficients in CNC controllers and robotic drives.

IC Role / Device Role / Timing Role: Deterministic-access memory co-located with FPGA-based motion sequencers requiring jitter-free read/write bursts.

Use Value: Synchronous self-timed writes guarantee consistent 250 MHz write completion without external handshake, reducing FPGA state-machine complexity.

Use Scenario: Capturing high-speed analog waveforms at ≥1 GS/s in digital oscilloscopes and logic analyzers.

IC Role / Device Role / Timing Role: Deep buffer memory interfaced to high-speed ADC front-ends and FPGA acquisition engines.

Use Value: 72-Mbit density provides >8 Msample buffer depth at 18-bit resolution, while HSTL I/O ensures signal integrity up to 500 Mbps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C34098B-250BIN 4M × 18 QDR-II+ SRAM, 250 MHz, 1.8 V core, but uses QDR interface (separate read/write ports) instead of DDR Requires separate address buses for read/write; lacks echo clocks and ZQ calibration Preferred where true simultaneous read/write is required, but adds PCB routing complexity and controller logic overhead
IS61WV102418BLL-250BLI 1M × 18 asynchronous SRAM, 250 MHz max access time (not clocked), 3.3 V only, no DDR or burst capability No clock domain synchronization; incompatible with DDR memory controllers or burst-oriented designs Only viable for legacy non-synchronous systems; cannot replace CY7C1518KV18-250BZXC in DDR-based architectures

Compared with AS7C34098B-250BIN and IS61WV102418BLL-250BLI, the CY7C1518KV18-250BZXC uniquely combines DDR-II timing, echo clock support, and programmable impedance in a 72-Mbit density - making it irreplaceable in new high-speed synchronous buffer designs requiring deterministic latency and simplified system-level timing.

Availability

CY7C1518KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, and industrial motion control requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7C1518KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1518KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking ASICs, FPGA-based accelerators, and real-time signal processing systems demanding precise clock-aligned data flow.

FAQ

What is the function of the DOFF pin on CY7C1518KV18-250BZXC?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle latency; when LOW, it configures the device for DDR-I mode with 1-cycle latency. This setting directly affects controller timing parameters and must be fixed during power-up; it is not dynamically switchable during operation.

Can CY7C1518KV18-250BZXC operate with only one clock (K) instead of differential K/K?

Yes - the device supports single-clock mode where K is used as the sole input clock and K is tied to VSS or left unconnected. In this mode, read data is driven on rising edges of K and K (i.e., same edge), and echo clocks CQ/CQ are generated relative to K. However, differential K/K is required to achieve full 250 MHz performance and minimize jitter-induced timing margin loss.

How does the ZQ pin calibrate output impedance?

The ZQ pin connects to an external precision resistor (typically 240 Ω) to ground, enabling on-die calibration that sets output driver impedance to 0.2 × RQ (e.g., 48 Ω). This matches standard PCB trace impedances without external termination resistors. Connecting ZQ directly to VDDQ enables minimum-impedance mode (~24 Ω), while floating or grounding ZQ is prohibited and may cause undefined behavior.

Is CY7C1518KV18-250BZXC pin-compatible with CY7C1518KV18-300BZXC?

Yes - both variants share identical 165-ball FBGA package (BZXC suffix), pinout, and electrical interface. The only difference is maximum rated clock frequency: 250 MHz vs. 300 MHz. A design validated for 250 MHz operation can use the -300BZXC part without hardware change, but the reverse is not guaranteed due to timing margin constraints at higher frequencies.

CY7C1518KV18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1518KV18-250BZXC FAQ

1.How can I place an order for CY7C1518KV18-250BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1518KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1518KV18-250BZXC reliable?

The price and inventory of CY7C1518KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518KV18-250BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1518KV18-250BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1518KV18-250BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1518KV18-250BZXC?

CY7C1518KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1518KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1518KV18-250BZXC?

For technical support, including CY7C1518KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518KV18-250BZXC requirements.

6.How does Aetrix verify that CY7C1518KV18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1518KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518KV18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1518KV18-250BZXC?

All CY7C1518KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518KV18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1518KV18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1518KV18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1518KV18-250BZXC Tags

  • CY7C1518KV18-250BZXC
  • CY7C1518KV18-250BZXC PDF
  • CY7C1518KV18-250BZXC Datasheet
  • CY7C1518KV18-250BZXC Specifications
  • CY7C1518KV18-250BZXC Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C1518KV18-250BZXC
  • Buy CY7C1518KV18-250BZXC
  • CY7C1518KV18-250BZXC Price
  • CY7C1518KV18-250BZXC Distributor
  • CY7C1518KV18-250BZXC Supplier
  • CY7C1518KV18-250BZXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER