Cypress Semiconductor Corp CY7C1518KV18-250BZXC
- Part No.:
- CY7C1518KV18-250BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1518KV18-250BZXC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:599
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Product details
Overview
CY7C1518KV18-250BZXC from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous DDR-II SRAM with two-word burst architecture, 250 MHz maximum operating frequency, 1.8 V core supply, and HSTL I/O compatible with 1.5 V or 1.8 V IO supply. It delivers 900 MB/s peak bandwidth via double-data-rate transfers at 500 Mbps per pin and supports precise timing control using dual K/K input clocks and dual C/C output clocks for skew management in high-speed memory subsystems used in network packet buffers and baseband processing.
For engineers reviewing the CY7C1518KV18-250BZXC datasheet, CY7C1518KV18-250BZXC pinout, CY7C1518KV18-250BZXC application, or CY7C1518KV18-250BZXC equivalent, key selection considerations include its 1.5-cycle read latency (DOFF = HIGH), echo clock support (CQ/CQ), JTAG 1149.1 test access port, PLL-based data placement accuracy, and 165-ball FBGA package with 13 × 15 × 1.4 mm footprint.
Technical Context
The device implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K and K clocks. Write data is registered on both K and K edges, while read data is driven on rising edges of C and C - enabling deterministic 1.5-cycle latency when DOFF is HIGH or 1-cycle latency when DOFF is LOW.
It integrates echo clocks (CQ/CQ) synchronized to C/C for simplified system-level data capture, uses ZQ for programmable output impedance matching (0.2 × RQ), and features variable-drive HSTL outputs supporting expanded voltage range (1.4 V–VDD). All synchronous inputs pass through registers clocked by K/K; all outputs are registered to C/C (or K/K in single-clock mode).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (4M × 18 configuration) |
| Max Clock Frequency | 250 MHz - sets maximum sustained throughput and system timing budget |
| Data Rate | 500 Mbps per DQ pin - enables 900 MB/s peak bandwidth with 18-bit bus |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - determines pipeline depth and controller wait-state requirements |
| Core Supply | 1.8 V ± 0.1 V - defines power rail design and decoupling strategy |
| I/O Voltage Support | 1.4 V–1.8 V HSTL - allows interoperability with 1.5 V or 1.8 V memory controllers |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - specifies PCB layout, thermal pad, and reflow profile |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, with exposed thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data | 18-bit DDR data bus; inputs sampled on K/K rising edges, outputs driven on C/C rising edges |
| K, K | Positive/negative input clocks | Edge-triggered clock pair for address/control/data capture; defines all synchronous timing references |
| C, C | Positive/negative output clocks | Deskew-capable clock pair for read data output; enables flight-time compensation across multi-device systems |
| CQ, CQ | Echo clocks | Free-running clocks synchronized to C/C; simplify controller data capture without per-pin delay tuning |
| LD | Load enable | Active-low signal initiating each burst transaction; must be asserted before R/W and address setup |
| R/W | Read/write direction | High = read, Low = write; sampled synchronously with LD on K edge to define access type |
| BWS[1:0] | Byte write select | Active-low controls DQ[8:0] (BWS0) and DQ[17:9] (BWS1); enables partial-word writes without read-modify-write |
| DOFF | Latency mode select | High = DDR-II mode (1.5-cycle latency), Low = DDR-I mode (1-cycle latency) |
| ZQ | Impedance calibration | Connects to external resistor to ground to tune output driver impedance to match board trace Z₀ |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces external address bus toggling by 50% versus single-word SRAMs, lowering EMI and controller overhead |
| Programmable output impedance (ZQ) | Enables dynamic on-die termination matching to PCB trace impedance without external resistors |
| Dual echo clocks (CQ/CQ) | Eliminates need for per-SRAM input delay tuning at controller; simplifies high-speed DDR routing and timing closure |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant test access for production ICT and board-level diagnostics without additional test points |
| PLL-based data placement | Ensures sub-cycle alignment between read data and C/C clocks, enabling reliable sampling at 500 Mbps |
Applications
| Network Packet Buffering | Baseband Signal Processing |
|---|---|
|
Use Scenario: Temporary storage of variable-length Ethernet/IP packets in Layer 2/3 switches and routers before forwarding or classification. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly with MAC or traffic manager ASICs via DDR interface. Use Value: 250 MHz clock + 1.5-cycle latency enables deterministic 320 ns worst-case read turnaround, supporting 10 Gbps line-rate buffering. |
Use Scenario: Real-time buffering of IQ samples between ADC/DAC and DSP in LTE/5G radio units. IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as ping-pong memory for FFT/IFFT pipelines with precise clock-aligned data handoff. Use Value: Echo clocks (CQ/CQ) eliminate inter-lane skew, allowing clean 500 Mbps sampling without per-channel deskew logic. |
| Industrial Motion Control | Test & Measurement Equipment |
|
Use Scenario: Storing position/velocity profiles and real-time servo loop coefficients in CNC controllers and robotic drives. IC Role / Device Role / Timing Role: Deterministic-access memory co-located with FPGA-based motion sequencers requiring jitter-free read/write bursts. Use Value: Synchronous self-timed writes guarantee consistent 250 MHz write completion without external handshake, reducing FPGA state-machine complexity. |
Use Scenario: Capturing high-speed analog waveforms at ≥1 GS/s in digital oscilloscopes and logic analyzers. IC Role / Device Role / Timing Role: Deep buffer memory interfaced to high-speed ADC front-ends and FPGA acquisition engines. Use Value: 72-Mbit density provides >8 Msample buffer depth at 18-bit resolution, while HSTL I/O ensures signal integrity up to 500 Mbps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C34098B-250BIN | 4M × 18 QDR-II+ SRAM, 250 MHz, 1.8 V core, but uses QDR interface (separate read/write ports) instead of DDR | Requires separate address buses for read/write; lacks echo clocks and ZQ calibration | Preferred where true simultaneous read/write is required, but adds PCB routing complexity and controller logic overhead |
| IS61WV102418BLL-250BLI | 1M × 18 asynchronous SRAM, 250 MHz max access time (not clocked), 3.3 V only, no DDR or burst capability | No clock domain synchronization; incompatible with DDR memory controllers or burst-oriented designs | Only viable for legacy non-synchronous systems; cannot replace CY7C1518KV18-250BZXC in DDR-based architectures |
Compared with AS7C34098B-250BIN and IS61WV102418BLL-250BLI, the CY7C1518KV18-250BZXC uniquely combines DDR-II timing, echo clock support, and programmable impedance in a 72-Mbit density - making it irreplaceable in new high-speed synchronous buffer designs requiring deterministic latency and simplified system-level timing.
Availability
CY7C1518KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, and industrial motion control requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for CY7C1518KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
The CY7C1518KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking ASICs, FPGA-based accelerators, and real-time signal processing systems demanding precise clock-aligned data flow.
FAQ
What is the function of the DOFF pin on CY7C1518KV18-250BZXC?
The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle latency; when LOW, it configures the device for DDR-I mode with 1-cycle latency. This setting directly affects controller timing parameters and must be fixed during power-up; it is not dynamically switchable during operation.
Can CY7C1518KV18-250BZXC operate with only one clock (K) instead of differential K/K?
Yes - the device supports single-clock mode where K is used as the sole input clock and K is tied to VSS or left unconnected. In this mode, read data is driven on rising edges of K and K (i.e., same edge), and echo clocks CQ/CQ are generated relative to K. However, differential K/K is required to achieve full 250 MHz performance and minimize jitter-induced timing margin loss.
How does the ZQ pin calibrate output impedance?
The ZQ pin connects to an external precision resistor (typically 240 Ω) to ground, enabling on-die calibration that sets output driver impedance to 0.2 × RQ (e.g., 48 Ω). This matches standard PCB trace impedances without external termination resistors. Connecting ZQ directly to VDDQ enables minimum-impedance mode (~24 Ω), while floating or grounding ZQ is prohibited and may cause undefined behavior.
Is CY7C1518KV18-250BZXC pin-compatible with CY7C1518KV18-300BZXC?
Yes - both variants share identical 165-ball FBGA package (BZXC suffix), pinout, and electrical interface. The only difference is maximum rated clock frequency: 250 MHz vs. 300 MHz. A design validated for 250 MHz operation can use the -300BZXC part without hardware change, but the reverse is not guaranteed due to timing margin constraints at higher frequencies.
CY7C1518KV18-250BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1518KV18-250BZXC FAQ
1.How can I place an order for CY7C1518KV18-250BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1518KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1518KV18-250BZXC reliable?
The price and inventory of CY7C1518KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518KV18-250BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1518KV18-250BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1518KV18-250BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1518KV18-250BZXC?
CY7C1518KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1518KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1518KV18-250BZXC?
For technical support, including CY7C1518KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518KV18-250BZXC requirements.
6.How does Aetrix verify that CY7C1518KV18-250BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1518KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518KV18-250BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1518KV18-250BZXC?
All CY7C1518KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518KV18-250BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1518KV18-250BZXC part is unused and in its original packaging.
Return procedure for CY7C1518KV18-250BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1518KV18-250BZXC Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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AT24C08C-STUM-T
Microchip Technology
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