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Cypress Semiconductor Corp CY7C1518KV18-300BZC

Part No.:
CY7C1518KV18-300BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1518KV18-300BZC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
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Payment
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Product details

Overview

CY7C1518KV18-300BZC from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous DDR-II SRAM with two-word burst architecture, 333 MHz clock support, 1.8 V core supply, HSTL I/O, and 165-ball FBGA package. It delivers 666 MHz effective data rate via double-data-rate interface, uses dual K/K input clocks for address/data capture, and supports configurable 1-cycle (DOFF = LOW) or 1.5-cycle (DOFF = HIGH) read latency in high-bandwidth networking buffers.

For engineers reviewing the CY7C1518KV18-300BZC datasheet, CY7C1518KV18-300BZC pinout, CY7C1518KV18-300BZC application, or CY7C1518KV18-300BZC equivalent, key selection criteria include DDR-II timing compliance, echo clock (CQ/CQ) synchronization capability, byte-write select (BWS0/BWS1) granularity, and 165-ball FBGA layout compatibility with high-speed PCB routing constraints.

Technical Context

The device implements a pipelined synchronous architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K and K clocks. Write data is registered on both K and K edges, while read data is output-synchronized to C and C clocks - enabling precise deskewing across multi-device memory subsystems.

It integrates a PLL for accurate data placement, JTAG 1149.1 TAP for boundary scan, and ZQ impedance calibration referenced to external resistor. Echo clocks CQ/CQ are free-running and phase-aligned to C/C, eliminating per-device capture timing margins in systems with distributed DDR SRAM banks.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit / 4M × 18 configuration - supports 18-bit wide data path with linear address incrementing across two 2M × 18 arrays.
Maximum Clock Frequency 333 MHz - defines maximum sustained bandwidth of 12 Gb/s (666 MT/s × 18 bits) in DDR mode.
Read Latency 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - directly impacts pipeline depth and controller FIFO sizing in real-time buffer designs.
I/O Voltage 1.8 V core / HSTL-compatible I/O with 1.4–1.8 V programmable VDDQ range - ensures interoperability with 1.5 V or 1.8 V memory controllers.
Package 165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch layout optimized for controlled-impedance routing and thermal dissipation in dense switch fabric PCBs.
Timing Interface DDR-II with echo clocks CQ/CQ and dual output clocks C/C - enables source-synchronous data capture without per-lane delay compensation circuitry.
Impedance Control ZQ pin calibrates output driver impedance to 0.2 × RQ (RQ to GND) - maintains signal integrity on parallel 18-bit buses up to 666 MT/s.

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus Shares physical pins for read output and write input; driven on C/C rising edges during reads, sampled on K/K rising edges during writes.
K / K Positive/negative input clocks Capture all synchronous inputs (address, R/W, LD, BWS); define access initiation edge and write data registration timing.
C / C Positive/negative output data clocks Source-synchronize read data output; used with CQ/CQ to deskew flight time mismatches across multiple SRAMs on same bus.
CQ / CQ Echo clocks Free-running, phase-aligned copies of C/C; simplify controller design by providing deterministic capture reference aligned to Q[17:0] valid window.
BWS0 / BWS1 Byte write select (active LOW) BWS0 controls D[8:0], BWS1 controls D[17:9]; enables partial-word writes without read-modify-write overhead in packet buffering applications.
DOFF Read latency mode control LOW → DDR-I mode (1-cycle latency); HIGH → DDR-II mode (1.5-cycle latency); selects trade-off between throughput and controller complexity.
ZQ Output impedance calibration input Connects to external resistor to ground; sets driver strength to match board trace impedance, reducing reflections on high-speed data lines.

Key Features

Feature Design Value
Two-word burst architecture Reduces external address bus toggling by 50% versus single-word SRAMs - lowers EMI and simplifies address routing in ASIC/FPGA interconnects.
Programmable output drive strength (ZQ) Enables dynamic impedance matching to 50 Ω or 60 Ω system traces without external termination resistors - saves board space and improves signal fidelity.
Dual output clock domain (C/C + CQ/CQ) Eliminates need for per-SRAM delay-locked loops or phase interpolators in multi-chip memory modules - reduces controller gate count and power.
JTAG 1149.1 boundary scan support Enables in-system testability of solder joints and interconnects in high-density FBGA layouts - critical for telecom equipment manufacturing yield assurance.
Variable VDDQ range (1.4–1.8 V) Allows seamless integration with legacy 1.5 V memory controllers or next-gen 1.8 V SoCs without level-shifting - accelerates platform reuse.

Applications

Telecom Line Card Buffer High-Speed Packet Switch

Use Scenario: Temporary storage of variable-length Ethernet frames in OC-192/STM-64 line interface cards before classification and forwarding.

IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as first-in-first-out (FIFO) buffer with deterministic 1.5-cycle read latency and echo-clock–aligned data capture.

Use Value: Enables zero-drop frame handling at 10 Gbps line rates by eliminating asynchronous handshake delays and supporting concurrent read/write on shared DQ bus.

Use Scenario: Shared memory pool for ingress/egress packet descriptors and header buffers in modular chassis-based switches.

IC Role / Device Role / Timing Role: DDR-II SRAM providing 12 Gb/s aggregate bandwidth to multiple ASIC ports via time-multiplexed burst accesses.

Use Value: Delivers consistent sub-2-ns access jitter across 18-bit lanes using CQ/CQ echo clocks - essential for maintaining strict cell/packet timing budgets.

Baseband Processing Module Industrial Real-Time Controller

Use Scenario: Storing interleaved I/Q samples from multi-carrier LTE transceivers prior to FFT processing in wireless base stations.

IC Role / Device Role / Timing Role: High-bandwidth memory buffer synchronized to FPGA fabric clocks via K/K and C/C, with DOFF set for 1-cycle latency.

Use Value: Supports continuous 200 MSps sampling with no backpressure due to pipelined DDR-II architecture and burst-addressed sequential reads.

Use Scenario: Deterministic motion control buffer storing encoder position snapshots and servo command histories in CNC machine tool controllers.

IC Role / Device Role / Timing Role: Low-latency SRAM interfacing directly to ARM Cortex-R real-time processor with HSTL-level signaling and ZQ-calibrated outputs.

Use Value: Guarantees <5 ns output skew across all 18 data lines - meets SIL-3 functional safety timing validation requirements for closed-loop feedback paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256A-15JCIN 256K × 16 async SRAM, 15 ns access, 3.3 V only, no DDR, no echo clocks Lacks burst, DDR, or clock deskew features - suitable only for low-speed control-plane buffering Select only if system lacks DDR clock infrastructure and bandwidth demand ≤ 1 Gb/s.
IS61WV102418BLL-10BLI 1M × 18 sync SRAM, 10 ns cycle, 3.3 V, single-clock, no burst, no ZQ No DDR, no echo clocks, no programmable drive - requires external termination and tighter layout control Choose when migrating legacy designs where DDR timing redesign is prohibitive and 666 MT/s is unnecessary.

Compared with AS7C3256A-15JCIN and IS61WV102418BLL-10BLI, CY7C1518KV18-300BZC uniquely delivers DDR-II timing, echo-clock–assisted capture, and ZQ-calibrated outputs - making it the only viable choice for new 10 Gbps+ packet buffer and baseband memory subsystems requiring deterministic sub-2-ns timing alignment.

Availability

CY7C1518KV18-300BZC is available at Aetrix Electronics and suitable for telecom line card buffer, high-speed packet switch, and industrial real-time controller applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1518KV18-300BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1518KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for deterministic, high-throughput buffering in packet-switched networks and real-time signal processing systems where timing predictability outweighs cost-per-bit optimization.

FAQ

What is the function of the DOFF pin on CY7C1518KV18-300BZC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle read latency and enhanced timing margin; when LOW, it reverts to DDR-I behavior with 1-cycle latency. This pin directly affects controller pipeline depth and must be tied to a fixed voltage (VDD or VSS) - not left floating - to ensure deterministic timing behavior across temperature and voltage corners.

Can CY7C1518KV18-300BZC operate with only K clock (no K, C, or C)?

Yes - the device supports single-clock mode where K serves as both input and output clock: address and control signals are latched on K rising edges, and read data is driven on the same K edges. However, this sacrifices DDR bandwidth and eliminates echo-clock deskew capability, limiting maximum reliable data rate to ~333 MT/s and increasing timing closure difficulty in multi-device systems.

How does ZQ calibration work, and what resistor value is required?

ZQ pin connects to an external precision resistor (RQ) tied to ground; the device measures RQ and scales its output drivers to 0.2 × RQ. For standard 50 Ω PCB traces, a 240 Ω ±1% resistor is used (0.2 × 240 Ω = 48 Ω). Calibration occurs automatically at power-up and can be retriggered via JTAG. Direct connection to VDDQ enables minimum-impedance mode (~30 Ω), but grounding or leaving ZQ unconnected is prohibited.

Is CY7C1518KV18-300BZC pin-compatible with CY7C1520KV18-300BZC?

No - although both use 165-ball FBGA packages, their pinouts differ significantly: CY7C1518KV18 has DQ[17:0], BWS0/BWS1, and 22 address lines (A[21:0]), while CY7C1520KV18 has DQ[35:0], BWS0–BWS3, and 21 address lines (A[20:0]). The ball assignments for data, byte-select, and address signals are not interchangeable; PCB layout and controller firmware must be redesigned for migration.

CY7C1518KV18-300BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1518KV18-300BZC FAQ

1.How can I place an order for CY7C1518KV18-300BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1518KV18-300BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1518KV18-300BZC reliable?

The price and inventory of CY7C1518KV18-300BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518KV18-300BZC is usually 5 days.

3.What payment methods are accepted for CY7C1518KV18-300BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1518KV18-300BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1518KV18-300BZC?

CY7C1518KV18-300BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1518KV18-300BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1518KV18-300BZC?

For technical support, including CY7C1518KV18-300BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518KV18-300BZC requirements.

6.How does Aetrix verify that CY7C1518KV18-300BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1518KV18-300BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518KV18-300BZC meets industry standards.

7.What is the process for return or replacement of CY7C1518KV18-300BZC?

All CY7C1518KV18-300BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518KV18-300BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1518KV18-300BZC part is unused and in its original packaging.

Return procedure for CY7C1518KV18-300BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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