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Cypress Semiconductor Corp CY7C1518KV18-300BZXC

Part No.:
CY7C1518KV18-300BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1518KV18-300BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:904

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Product details

Overview

CY7C1518KV18-300BZXC from Cypress Semiconductor is a 72-Mbit (4M × 18) DDR-II synchronous pipelined SRAM with two-word burst architecture, 333 MHz clock operation, 1.8 V core supply, HSTL I/O, and 165-ball FBGA package. It delivers 666 MT/s data transfer via double-data-rate interface and supports configurable 1-cycle (DOFF = LOW) or 1.5-cycle (DOFF = HIGH) read latency for high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the CY7C1518KV18-300BZXC datasheet, CY7C1518KV18-300BZXC pinout, CY7C1518KV18-300BZXC application, or CY7C1518KV18-300BZXC equivalent, key selection criteria include DDR-II timing compliance, echo clock (CQ/CQ) synchronization capability, burst-addressed 18-bit dual-word access, and JTAG 1149.1 test port support for system-level validation.

Technical Context

The device implements a synchronous pipelined architecture with independent K/K input clocks for address/control/data capture and C/C output clocks for data launch-enabling precise skew management across multi-device DDR buses. Its internal burst counter uses A0 to generate sequential 18-bit word addresses on each access, eliminating external address sequencing logic.

All synchronous inputs (R/W, LD, BWS[1:0], A[21:0]) are registered on rising edges of K/K; all outputs (DQ[17:0], CQ, CQ) are edge-aligned to C/C (or K/K in single-clock mode). The integrated PLL ensures accurate data placement relative to echo clocks, while ZQ calibration enables dynamic output impedance matching to 0.2 × RQ.

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (4M × 18), enabling compact high-speed buffer storage without depth expansion
Max Clock Frequency 333 MHz - defines maximum sustained bandwidth of 12 Gb/s (666 MT/s × 18 bits)
Read Latency 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - selectable for timing margin optimization in FPGA/ASIC interfaces
I/O Voltage 1.8 V core with HSTL-compatible I/O (1.4–1.8 V VDDQ range), supporting mixed-voltage system integration
Package 165-ball FBGA (13 × 15 × 1.4 mm), RoHS-compliant, fine-pitch layout for high-density PCB routing
Burst Mode Two-word linear burst - reduces address bus toggling by 50% versus single-word access, lowering EMI and controller overhead
Timing Interface DDR-II with echo clocks (CQ/CQ) - eliminates per-SRAM capture timing variation in multi-chip modules

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data I/O Shares physical pins for read/write; driven on C/C rising edges during reads, sampled on K/K rising edges during writes
K / K Differential input clock pair Captures all synchronous inputs (address, R/W, LD, BWS); K used for primary edge alignment, K for complementary sampling
C / C Differential output data clock pair Controls timing of DQ[17:0] and CQ/CQ outputs; enables board-level flight-time deskewing across multiple SRAMs
CQ / CQ Output echo clocks Free-running, phase-aligned copies of C/C; referenced by system controller for reliable DDR data capture without per-pin delay tuning
DOFF Read latency configuration input Assert HIGH → 1.5-cycle latency (DDR-II mode); assert LOW → 1-cycle latency (DDR-I compatibility mode)
ZQ Output impedance calibration reference Connects to external resistor to ground (RQ); sets DQ/CQ/CQ drive strength to 0.2 × RQ for controlled signal integrity

Key Features

Feature Design Value
Two-word burst addressing Reduces external address bus frequency by half and eliminates need for burst-counting logic in controller
Integrated PLL with echo clocks Enables deterministic ±50 ps data-to-CQ skew across temperature/voltage, simplifying high-speed timing closure
Programmable output drive (HSTL) Variable drive strength calibrated via ZQ pin allows optimal signal integrity on varied trace lengths and loads
JTAG 1149.1 boundary scan Supports IEEE-compliant structural testing, interconnect verification, and in-system programming of adjacent logic
Single/dual clock domain operation Operates with only K/K (C/C unused) for simplified timing in legacy systems, or full C/C + CQ/CQ for maximum bandwidth

Applications

Telecom Packet Buffer Network Switch Lookup Table

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards.

IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM buffer interfacing directly with Xilinx UltraScale+ GTY transceivers using DDR-II protocol.

Use Value: 666 MT/s bandwidth and echo-clock synchronization ensure zero-cycle FIFO underflow across multi-lane traffic bursts.

Use Scenario: Accelerating MAC/IP address resolution in Layer 2/3 switching ASICs with parallel TCAM assist.

IC Role / Device Role / Timing Role: Synchronous burst-access memory serving as shadow table for fast LUT updates and hit/miss reporting.

Use Value: 1.5-cycle latency mode (DOFF = HIGH) provides deterministic timing margin for 333 MHz control-plane clock domains.

Medical Imaging Frame Store Industrial Vision Preprocessing Buffer

Use Scenario: Temporary storage of uncompressed 12-bit monochrome image frames (4096 × 4096) during real-time DICOM compression.

IC Role / Device Role / Timing Role: DDR-II SRAM acting as ping-pong frame buffer between FPGA-based image pipeline and ARM Cortex-A53 host processor.

Use Value: 165-ball FBGA footprint minimizes PCB area while HSTL I/O maintains signal fidelity at 666 MT/s over 80 mm traces.

Use Scenario: Holding intermediate convolution results in embedded vision systems using TI TDA4VM SoC with C7x DSP cores.

IC Role / Device Role / Timing Role: Burst-mode memory providing aligned 18-bit pixel blocks to hardware accelerators with minimal address overhead.

Use Value: Two-word burst reduces effective memory access count by 50%, cutting power consumption by 22% versus single-word SRAMs at same throughput.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256A-20TIN Asynchronous 256K × 18 SRAM, 20 ns access, no DDR, no echo clocks, 3.3 V only Lacks burst, DDR, or timing synchronization features; suitable only for low-speed control-plane buffering Select only if system lacks DDR clock infrastructure and bandwidth demand ≤ 50 MB/s
IS61WV102418BLL-10BLI Synchronous 1M × 18, 10 ns cycle time, single-data-rate, no PLL or CQ/CQ, 3.3 V/2.5 V I/O No burst addressing or echo clock support; requires full address bus toggling per word; lower max bandwidth (100 MHz) Choose when cost sensitivity outweighs bandwidth needs and controller lacks DDR timing generation capability

Compared with AS7C3256A-20TIN and IS61WV102418BLL-10BLI, CY7C1518KV18-300BZXC delivers 12× higher effective bandwidth, eliminates per-word address overhead via burst mode, and enables deterministic multi-device timing alignment through CQ/CQ echo clocks-critical for >1 Gb/s packet processing.

Availability

CY7C1518KV18-300BZXC is available at Aetrix Electronics and suitable for telecom packet buffers, network switch lookup tables, medical imaging frame stores, and industrial vision preprocessing buffers requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY7C1518KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with emphasis on signal integrity and timing precision.

CY7C1518KV18 belongs to Cypress's DDR-II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in FPGA- and ASIC-based networking and imaging platforms where echo-clock synchronization and burst efficiency are critical.

FAQ

What is the function of the DOFF pin on CY7C1518KV18-300BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle latency for improved timing margin; when LOW, it selects DDR-I compatibility mode with 1-cycle latency. This setting directly affects setup/hold timing windows for read data capture and must be fixed at power-up.

Can CY7C1518KV18-300BZXC operate without the C and C output clocks?

Yes - the device supports single-clock-domain operation using only K and K for both input sampling and output launching. In this mode, DQ[17:0], CQ, and CQ are synchronized to K/K instead of C/C, sacrificing deskew capability but simplifying clock routing in cost-sensitive or space-constrained designs.

How does ZQ pin calibration affect signal integrity?

ZQ connects to an external resistor (RQ) tied to ground; the device measures RQ and configures its output drivers to deliver 0.2 × RQ impedance. This matches typical 50 Ω PCB traces, minimizing reflections and ensuring clean eye diagrams at 666 MT/s - critical for maintaining BER < 10⁻¹² in high-speed links.

Is CY7C1518KV18-300BZXC pin-compatible with CY7C1520KV18-300BZXC?

No - although both use the same 165-ball FBGA package, their pinouts differ significantly: CY7C1518KV18 has DQ[17:0], BWS[1:0], and 22 address lines (A[21:0]), while CY7C1520KV18 uses DQ[35:0], BWS[3:0], and 21 address lines (A[20:0]). Interchange requires full PCB redesign and firmware revalidation.

CY7C1518KV18-300BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1518KV18-300BZXC FAQ

1.How can I place an order for CY7C1518KV18-300BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1518KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1518KV18-300BZXC reliable?

The price and inventory of CY7C1518KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518KV18-300BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1518KV18-300BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1518KV18-300BZXC transactions.

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4.How is shipping managed for CY7C1518KV18-300BZXC?

CY7C1518KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1518KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1518KV18-300BZXC?

For technical support, including CY7C1518KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518KV18-300BZXC requirements.

6.How does Aetrix verify that CY7C1518KV18-300BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1518KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518KV18-300BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1518KV18-300BZXC?

All CY7C1518KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518KV18-300BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1518KV18-300BZXC part is unused and in its original packaging.

Return procedure for CY7C1518KV18-300BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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