Cypress Semiconductor Corp CY7C1518KV18-300BZXI

Overview

CY7C1518KV18-300BZXI from Cypress Semiconductor is a 72-Mbit (4M × 18) DDR-II synchronous SRAM with two-word burst architecture, 333 MHz clock operation, 1.8 V core supply, HSTL I/O, and 165-ball FBGA package. It delivers 666 MT/s data transfer via double data rate interface, supports programmable output impedance via ZQ pin, and uses echo clocks (CQ/CQ) for precise high-speed data capture in networking and telecom buffer applications.

For engineers reviewing the CY7C1518KV18-300BZXI datasheet, CY7C1518KV18-300BZXI pinout, CY7C1518KV18-300BZXI application, or CY7C1518KV18-300BZXI equivalent, key selection criteria include DDR-II read latency (1.5 cycles with DOFF HIGH), dual-clock timing (K/K and C/C), burst address incrementing on A0, HSTL voltage range (1.4 V–VDD), and JTAG 1149.1 test access support.

Technical Context

The device implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K and K clocks. Write data is registered on both K and K rising edges, while read data is driven synchronously on C and C rising edges - enabling precise deskewing across multi-device memory subsystems.

It integrates a phase-locked loop (PLL) for accurate data placement, supports single-clock mode (using K/K only when C/C are unconnected), and provides asynchronous ZQ calibration for output impedance matching to system bus (0.2 × RQ). DOFF pin selects between DDR-II (1.5-cycle latency) and DDR-I (1-cycle latency) timing modes.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with AS7C362008B-333BIN and IS61WV102418BLL-300TQI, CY7C1518KV18-300BZXI uniquely delivers 72-Mbit density with DDR-II burst, echo clocks, and ZQ calibration - making it the only option among the three that supports 666 MT/s deterministic data capture in high-speed telecom and packet-processing systems.

Availability

CY7C1518KV18-300BZXI is available at Aetrix Electronics and suitable for telecom line card buffer, high-speed packet switch ASIC interface, and industrial real-time motion controller buffer applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7C1518KV18-300BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC mixed-signal ICs, and USB/USB-C solutions for industrial, automotive, and communications markets.

CY7C1518KV18 belongs to Cypress's DDR-II Burst SRAM product line, designed specifically for high-bandwidth, low-latency buffering in networking infrastructure, baseband processing, and real-time control systems demanding deterministic timing and signal integrity at >300 MHz.

FAQ

What is the function of the DOFF pin on CY7C1518KV18-300BZXI?

The DOFF (DDR Off) pin configures read latency mode: when asserted HIGH, the device operates in DDR-II mode with 1.5-cycle read latency; when LOW, it reverts to DDR-I mode with 1-cycle latency. This pin directly controls internal timing paths and must be held static during operation - it is not sampled dynamically per access.

Can CY7C1518KV18-300BZXI operate without external C and C clocks?

Yes - in single-clock mode, the device uses K and K clocks for both input sampling and output data timing. In this configuration, CQ and CQ are generated relative to K/K instead of C/C, and read data is driven on K/K rising edges. However, echo clock benefits (flight-time deskew) are lost, requiring tighter board-level timing control.

How does ZQ calibration affect signal integrity on CY7C1518KV18-300BZXI?

ZQ calibration adjusts the output driver impedance of DQ, CQ, and CQ pins to match the system's data bus characteristic impedance (typically 50 Ω). A precision resistor (RQ) tied between ZQ and ground sets output strength to 0.2 × RQ. This minimizes signal reflections and improves eye diagram margin at 666 MT/s, especially over longer traces or multi-drop topologies.

Is CY7C1518KV18-300BZXI pin-compatible with CY7C1520KV18-300BZXI?

No - although both use the same 165-ball FBGA package, their pinouts differ significantly. CY7C1518KV18-300BZXI has DQ[17:0], BWS[1:0], and 22 address lines (A[21:0]), while CY7C1520KV18-300BZXI has DQ[35:0], BWS[3:0], and 21 address lines (A[20:0]). Direct substitution requires PCB redesign and firmware address mapping changes.