Cypress Semiconductor Corp CY7C1518V18-250BZC
- Part No.:
- CY7C1518V18-250BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1518V18-250BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:210
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Product details
Overview
CY7C1518V18 from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous pipelined DDR-II SRAM with 300 MHz clock support, 2-word burst architecture, and dual-clock DDR interface delivering 600 MHz effective data rate. It operates from a 1.8V core supply with HSTL I/O, integrates a Delay Lock Loop (DLL) for precise data placement, and targets high-bandwidth buffering in network packet processors and telecom line cards.
For engineers reviewing the CY7C1518V18 datasheet, CY7C1518V18 pinout, CY7C1518V18 application, or CY7C1518V18 equivalent, key selection criteria include its 4M × 18 organization, 165-ball FBGA package, echo clock (CQ/CQ) timing support, and synchronous self-timed write capability-critical for deterministic latency in burst-oriented memory subsystems.
Technical Context
The CY7C1518V18 implements a synchronous pipelined architecture where all address, control, and data inputs are registered on rising edges of K/K clocks. Its internal organization comprises two 2M × 18 arrays, with A0 driving the burst counter to sequence two 18-bit words per access.
Read data is output-synchronized to C/C clocks (or K/K in single-clock mode), while echo clocks CQ/CQ-phase-aligned to C/C-are provided to simplify system-level data capture. The DLL ensures accurate data-to-clock alignment, and ZQ enables dynamic output impedance tuning to match the 50-Ω system bus.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 72 Mbit / 4M × 18 - supports 18-bit parallel data paths with 2-word burst transfers per address cycle |
| Max Clock Frequency | 250 MHz (K/K) - defines maximum sustained burst transaction rate; corresponds to 500 MT/s effective throughput |
| Data Rate | 600 MHz DDR - achieves 1.2 Gbps per DQ pin via double-edge sampling on C/C clocks |
| Core Supply | 1.8 V ± 0.1 V - powers SRAM core and logic; requires tight regulation to maintain timing margins |
| I/O Standard | HSTL Class I - provides 1.5V swing with programmable drive strength and ZQ-calibrated output impedance |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - fine-pitch, thermally enhanced package suitable for high-density PCB layouts |
| Timing Architecture | DDR-II with DLL - eliminates data-eye closure due to clock skew; enables reliable operation at 250 MHz system clock |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data bus | 18-bit DDR data path; inputs sampled on K/K rising edges, outputs driven on C/C rising edges with echo-clock alignment |
| A[21:1], A0 | Address inputs | A[21:1] selects 4M rows; A0 feeds burst counter to generate second 18-bit word address in linear sequence |
| BWS[1:0] | Byte write select (active low) | BWS0 controls DQ[8:0], BWS1 controls DQ[17:9]; enables partial writes without read-modify-write overhead |
| K, K | Input clock pair | Rising edges latch all synchronous inputs (address, R/W, LD, BWS); define system timing reference for command initiation |
| C, C | Output clock pair | Rising edges gate read data output; used with CQ/CQ to deskew flight time across multiple devices on same bus |
| CQ, CQ | Echo clock outputs | Free-running clocks synchronized to C/C; eliminate need for external strobes in high-speed capture circuitry |
| ZQ | Impedance calibration input | Connects to external 240 Ω resistor to ground; calibrates DQ/CQ output drivers to ±10% of 50 Ω system impedance |
| DOFF | DLL disable control | Pulling LOW disables DLL; used for power-down or when board-level timing budget allows fixed delay compensation |
Key Features
| Feature | Design Value |
|---|---|
| 2-word burst architecture | Reduces address bus toggling by 50% versus single-word access-lowers EMI and simplifies controller address generation logic |
| Integrated Delay Lock Loop (DLL) | Compensates for process/voltage/temperature drift to maintain < ±50 ps data-to-clock alignment at 250 MHz |
| HSTL Class I I/O with ZQ calibration | Ensures consistent signal integrity across voltage/temp range; eliminates manual termination resistor selection |
| Synchronous self-timed writes | Removes external write pulse timing constraints; guarantees internal write completion before next cycle begins |
| JTAG 1149.1 test access port | Enables boundary-scan testing of SRAM interconnects without requiring functional memory access during production test |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-throughput burst buffer interfacing directly to MAC-layer controllers via 18-bit DDR bus. Use Value: 250 MHz clock + 2-word burst delivers 900 MB/s sustained bandwidth-sufficient for 10Gbps line-rate header processing without pipeline stalls. | Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH framer ASICs. IC Role / Device Role / Timing Role: Synchronous pipelined memory providing deterministic 2-cycle read latency for cell-based traffic shaping. Use Value: DLL-aligned CQ/CQ echo clocks enable reliable data capture at 600 Mbps DDR without complex receiver deskew circuitry. |
| Baseband Processing Cache | Industrial Real-Time Controller Buffer |
Use Scenario: Temporary storage of FFT coefficients and channel estimation results in LTE eNodeB baseband units. IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM co-located with DSP cores to minimize memory wait states. Use Value: 1.8V core + HSTL I/O reduces switching noise coupling into sensitive RF sections compared to 3.3V alternatives. | Use Scenario: Motion control trajectory buffering in CNC machine controllers requiring jitter-free position updates. IC Role / Device Role / Timing Role: Deterministic-access memory holding interpolated motion profiles for servo loop execution. Use Value: Synchronous self-timed writes guarantee write completion within one K-clock cycle-enabling sub-microsecond update intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1520V18 | 2M × 36 organization (same 72-Mbit density); uses 21 address bits and BWS[3:0] | Optimized for 36-bit datapaths (e.g., PCI-X, legacy RISC buses); higher pin count for wider interface | Select when system bus width matches 36-bit and burst depth requirement remains 2 words |
| IS42S16400F-6BLI | SDRAM (not SRAM); 16M × 4 organization; 166 MHz clock; no DLL or echo clocks | Requires refresh management and longer latency; lacks deterministic timing for real-time control loops | Consider only for cost-sensitive, non-real-time buffering where latency variability is acceptable |
Compared with CY7C1520V18, CY7C1518V18 offers narrower 18-bit bus loading and lower pin count for space-constrained designs; versus IS42S16400F-6BLI, it delivers guaranteed zero-wait-state operation and no refresh overhead-critical for hard real-time embedded systems.
Availability
CY7C1518V18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial real-time controller buffer applications requiring stable component supply and long-term obsolescence planning.
Supply support for CY7C1518V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.
The CY7C15xxV18 family was designed specifically for high-bandwidth, low-latency burst memory applications in networking and telecom infrastructure-emphasizing deterministic timing, DDR-II compatibility, and system-level signal integrity.
FAQ
What is the minimum supported clock frequency for CY7C1518V18?
The device supports operation down to DC (0 Hz) for static functionality, but its DDR timing specifications-including setup/hold windows and DLL lock range-are guaranteed only at frequencies ≥100 MHz. For full compliance with AC parameters in the datasheet, use ≥167 MHz as the practical lower limit.
Can CY7C1518V18 operate without the DLL enabled?
Yes-asserting DOFF LOW disables the DLL, reverting to fixed-delay output timing. However, AC timing parameters change significantly: tAC increases by up to 1.2 ns, and data valid window shrinks. This mode is intended only for power-sensitive or low-frequency applications where timing margin is sufficient.
How does ZQ calibration affect signal integrity?
ZQ calibration adjusts the DQ and CQ driver output impedance to match the system's 50-Ω transmission line. With a 240-Ω resistor tied to ground, the device sets driver strength to deliver 0.2 × 240 Ω = 48 Ω, minimizing reflections and ensuring clean eye diagrams at 600 Mbps DDR rates.
Is CY7C1518V18 compatible with standard HSTL-18 receivers?
Yes-the device complies with JEDEC HSTL Class I (1.8V) specifications: VDDQ = 1.8V, VOH = 1.5V min, VOL = 0.3V max, and VIH/VIL thresholds centered at VREF = 0.9V. It interfaces directly with FPGA or ASIC HSTL-18 I/O banks without level-shifting.
CY7C1518V18-250BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1518V18-250BZC FAQ
1.How can I place an order for CY7C1518V18-250BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1518V18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1518V18-250BZC reliable?
The price and inventory of CY7C1518V18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518V18-250BZC is usually 5 days.
3.What payment methods are accepted for CY7C1518V18-250BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1518V18-250BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1518V18-250BZC?
CY7C1518V18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1518V18-250BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1518V18-250BZC?
For technical support, including CY7C1518V18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518V18-250BZC requirements.
6.How does Aetrix verify that CY7C1518V18-250BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1518V18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518V18-250BZC meets industry standards.
7.What is the process for return or replacement of CY7C1518V18-250BZC?
All CY7C1518V18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518V18-250BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1518V18-250BZC part is unused and in its original packaging.
Return procedure for CY7C1518V18-250BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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STMicroelectronics
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STMicroelectronics

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