Cypress Semiconductor Corp CY7C1520AV18-250BZC
- Part No.:
- CY7C1520AV18-250BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1520AV18-250BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:615
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Product details
Overview
CY7C1520AV18-250BZC from Cypress Semiconductor is a 72-Mbit DDR-II synchronous SRAM configured as 2 M × 36, operating at 250 MHz with 1.8-V core supply and HSTL I/O. It implements two-word burst architecture with dual input clocks (K/K̄) and dual output clocks (C/C̄), supports echo clocks (CQ/CQ̄) for precise data capture, and features on-chip DLL for 1.5-cycle read latency in DDR-II mode.
For engineers reviewing the CY7C1520AV18-250BZC datasheet, CY7C1520AV18-250BZC pinout, CY7C1520AV18-250BZC application, or CY7C1520AV18-250BZC equivalent, key selection criteria include DDR-II timing compliance, 36-bit wide data interface, FBGA-165 package compatibility, DLL-enabled low-latency read operation, and JTAG 1149.1 test support for high-speed memory subsystem validation.
Technical Context
This SRAM uses synchronous pipelined architecture with internal burst counter driven by A0 to deliver two sequential 36-bit words per access. All address, control, and data signals are registered on rising edges of K/K̄, while read data is edge-aligned to C/C̄ (or K/K̄ in single-clock mode) and echoed via CQ/CQ̄ for deterministic capture.
The device supports both DDR-II (DLL enabled, 1.5-cycle read latency, up to 300 MHz) and DDR-I (DLL disabled, 1-cycle latency, up to 167 MHz) operation modes. Byte write select inputs BWS[3:0] enable independent 9-bit byte masking, and ZQ pin allows dynamic output impedance calibration to match system bus termination.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (2 M × 36 organization) |
| Max Clock Frequency | 250 MHz - defines maximum sustained burst throughput of 1.8 Gbps (36-bit × 250 MHz × 2 words) |
| Data Rate | 500 Mbps per data line - double-data-rate transfer at 250 MHz clock yields 500 MHz effective data rate |
| Read Latency | 1.5 cycles with DLL enabled - enables tighter timing closure in high-speed controllers vs. 1-cycle DDR-I mode |
| I/O Standard | HSTL Class I - ensures signal integrity at 500 Mbps with controlled drive strength and VREF-referenced thresholds |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.8 V ±0.1 V (I/O) - mandates separate low-noise power domains |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - supports high-density routing with 0.8 mm ball pitch |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit wide DDR interface; latched on K/K̄ rising edges for writes, driven on C/C̄ rising edges for reads; tristated automatically when deselected |
| K, K̄ | Primary input clocks | Rising edges sample all synchronous inputs (address, R/W, BWS); define access initiation and timing reference for internal pipeline |
| C, C̄ | Output data clocks | Edge-aligned with read data; used with CQ/CQ̄ to deskew flight time across multiple devices in parallel memory systems |
| CQ, CQ̄ | Output echo clocks | Free-running, phase-matched to C/C̄; simplify controller design by eliminating need for per-device delay calibration |
| BWS[3:0] | Byte write select | Four active-low signals enabling independent 9-bit byte masking during writes - critical for partial-word updates without read-modify-write |
| LD | Load strobe | Active-low synchronous signal defining start of each burst transaction; gates address and R/W sampling |
| ZQ | Impedance calibration input | Connects to external 240 Ω resistor to ground to calibrate output driver impedance to 48 Ω (0.2 × RQ) |
| DOFF | DLL disable control | Active-low pin forcing DDR-I mode (1-cycle latency, max 167 MHz); must be pulled high via ≤10 kΩ for normal DDR-II operation |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces external address bus toggling frequency by 50% versus single-word access, lowering EMI and routing complexity |
| Dual echo clocks (CQ/CQ̄) | Eliminates need for per-SRAM trace length matching in multi-device memory channels, simplifying PCB layout |
| Programmable output drive strength | HSTL outputs support variable drive via ZQ calibration, ensuring consistent signal integrity across voltage/temperature corners |
| JTAG 1149.1 boundary scan | Enables in-system testing of interconnects and solder joints without physical probe access - essential for high-reliability assemblies |
| DLL-enabled 1.5-cycle read latency | Improves memory bandwidth utilization in burst-intensive applications like packet buffering and video frame storage |
Applications
| Telecom Packet Buffering | Network Switching Fabric |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfaced to ASIC-based switch fabric controller. Use Value: 36-bit width matches typical switch bus granularity; 250 MHz DDR-II operation delivers 18 Gbps aggregate bandwidth for concurrent multi-port traffic. | Use Scenario: Temporary storage of fragmented IP packets during reassembly in core routers. IC Role / Device Role / Timing Role: Synchronous burst-access memory supporting parallel read/write operations under strict jitter constraints. Use Value: Echo clocks (CQ/CQ̄) ensure deterministic data capture across multiple SRAMs synchronized to a common system clock domain. |
| Medical Imaging Frame Store | Industrial Vision Processing |
Use Scenario: Capturing and buffering full-resolution ultrasound or MRI scan lines prior to real-time processing. IC Role / Device Role / Timing Role: Dual-port-capable memory acting as ping-pong frame buffer between ADC interface and DSP engine. Use Value: Two-word burst reduces address bus activity by half, minimizing noise coupling into sensitive analog front-end circuitry. | Use Scenario: Storing high-speed camera sensor output (e.g., 12-bit, 100+ fps) for defect detection algorithms. IC Role / Device Role / Timing Role: Burst-mode memory co-located with FPGA-based image preprocessor for minimal latency path. Use Value: DLL-enabled 1.5-cycle latency ensures tight timing alignment between pixel clock and memory read cycles for sub-microsecond response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256A-25JC | 512 K × 36 asynchronous SRAM; no DDR, no DLL, no echo clocks; 25 ns access time | Lower bandwidth (max ~160 Mbps), no burst capability; suited for simpler control-plane buffers where timing predictability > speed | Select only if system lacks DDR clock distribution infrastructure or requires true asynchronous operation |
| IS61WV204836BLL-25BLI | 2 M × 36 synchronous SRAM with single-data-rate (SDR) interface; 25 ns cycle time; no burst, no echo clocks | Half the peak bandwidth of CY7C1520AV18-250BZC; simpler timing but requires higher address bus frequency for same throughput | Choose when DDR complexity is undesirable and 900 Mbps sustained bandwidth suffices |
Compared with AS7C3256A-25JC and IS61WV204836BLL-25BLI, CY7C1520AV18-250BZC delivers 2× higher bandwidth via DDR-II and eliminates board-level timing skew through integrated echo clocks - critical for deterministic real-time imaging and telecom applications.
Availability
CY7C1520AV18-250BZC is available at Aetrix Electronics and suitable for telecom packet buffering, network switching fabric, medical imaging frame store, and industrial vision processing requiring stable component supply and long-term production continuity.
Supply support for CY7C1520AV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems.
CY7C1520AV18 belongs to Cypress's DDR-II SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in networking, medical imaging, and industrial automation equipment.
FAQ
What is the minimum supported clock frequency for CY7C1520AV18-250BZC?
The device has no specified minimum clock frequency; it operates down to DC in DLL-enabled mode. However, DLL lock requires ≥100 MHz for stable operation. Below that, DOFF must be asserted to use DDR-I timing, which supports frequencies down to 0 Hz with 1-cycle latency.
Can CY7C1520AV18-250BZC operate without connecting C and C̄ pins?
Yes - when C and C̄ are left unconnected, the device defaults to single-clock mode using K and K̄ for both input sampling and output data timing. In this mode, CQ and CQ̄ remain functional but track K/K̄ instead of C/C̄, preserving echo clock utility for data capture.
How does ZQ pin calibration affect signal integrity?
ZQ calibration adjusts output driver impedance to match the system's characteristic impedance (typically 50 Ω). With a 240 Ω resistor to ground, drivers are tuned to 48 Ω (0.2 × 240 Ω), minimizing reflections and improving eye diagram margins at 500 Mbps data rates.
Is JTAG boundary scan supported in all operating modes?
Yes - IEEE 1149.1 TAP controller remains fully functional regardless of DLL state (enabled/disabled) or clock frequency. Scan operations proceed independently of memory access timing, allowing debug and test access even during high-speed DDR-II operation.
CY7C1520AV18-250BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1520AV18-250BZC FAQ
1.How can I place an order for CY7C1520AV18-250BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1520AV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1520AV18-250BZC reliable?
The price and inventory of CY7C1520AV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1520AV18-250BZC is usually 5 days.
3.What payment methods are accepted for CY7C1520AV18-250BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1520AV18-250BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1520AV18-250BZC?
CY7C1520AV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1520AV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1520AV18-250BZC?
For technical support, including CY7C1520AV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1520AV18-250BZC requirements.
6.How does Aetrix verify that CY7C1520AV18-250BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1520AV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1520AV18-250BZC meets industry standards.
7.What is the process for return or replacement of CY7C1520AV18-250BZC?
All CY7C1520AV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1520AV18-250BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1520AV18-250BZC part is unused and in its original packaging.
Return procedure for CY7C1520AV18-250BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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