Cypress Semiconductor Corp CY7C1520JV18-300BZXC

Overview

CY7C1520JV18-300BZXC from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II SRAM configured as 2M × 36, operating at 300 MHz with 1.5-cycle read latency (DLL enabled), 1.8V core supply, HSTL I/O, and 165-ball FBGA (15 × 17 × 1.4 mm). It delivers 600 MT/s data throughput via double-data-rate interface and supports echo clocks (CQ/CQ) for precise high-speed data capture in networking and telecom line cards.

For engineers reviewing the CY7C1520JV18-300BZXC datasheet, CY7C1520JV18-300BZXC pinout, CY7C1520JV18-300BZXC application, or CY7C1520JV18-300BZXC equivalent, key selection criteria include DDR II burst timing, DLL-enabled latency mode, dual-clock vs. single-clock configuration, HSTL drive strength tuning via ZQ, and 2M×36 memory mapping for packet buffer and frame store implementations.

Technical Context

This SRAM implements a synchronous pipelined architecture with internal 2-word burst counter driven by A0, using rising edges of complementary K/K clocks for address and write data capture, and C/C clocks for output timing. All synchronous inputs pass through edge-triggered registers; outputs are registered to C/C (or K/K in single-clock mode).

The device integrates a Delay Lock Loop (DLL) enabling accurate 1.5-cycle read latency at 300 MHz, while DOFF pin control allows fallback to DDR I mode (1-cycle latency, ≤167 MHz). Echo clocks CQ/CQ are phase-aligned to C/C and referenced to VDDQ, eliminating per-device skew compensation in multi-SRAM systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant (Pb-free option available).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with AS7C3256A-15JCIN and IS61WV102432BLL-15BLI, CY7C1520JV18-300BZXC uniquely delivers DDR II timing, DLL-controlled latency, echo clocks for skew-insensitive capture, and ZQ-calibrated HSTL I/O - making it the only viable choice for 300 MHz clock domain systems requiring deterministic 1.5-cycle read response.

Availability

CY7C1520JV18-300BZXC is available at Aetrix Electronics and suitable for packet buffering in network switches, frame storage in telecom line cards, and real-time video processing requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY7C1520JV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C15xxJ series was designed specifically for high-bandwidth, low-latency synchronous memory applications in networking infrastructure and telecom equipment, emphasizing DDR II timing precision, echo-clock synchronization, and robust HSTL I/O for signal integrity at 300 MHz.

FAQ

What is the function of the DOFF pin on CY7C1520JV18-300BZXC?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When tied LOW, the device reverts to DDR I timing mode with 1-cycle read latency and maximum operating frequency reduced to 167 MHz. For standard DDR II operation at 300 MHz with 1.5-cycle latency, DOFF must be held HIGH via a ≤10 kΩ pull-up resistor to VDDQ.

Can CY7C1520JV18-300BZXC operate with only one clock pair instead of separate K/K and C/C?

Yes. In single-clock mode, C and C pins must be strapped HIGH at power-on. The device then uses K/K exclusively for both input registration and output timing, behaving as if K/K and C/C have zero skew. All AC timing parameters remain unchanged, and echo clocks CQ/CQ are generated relative to K/K instead of C/C.

How does ZQ calibration affect signal integrity on CY7C1520JV18-300BZXC?

ZQ calibration adjusts the output driver impedance of DQ[35:0], CQ, and CQ pins to match the system data bus. With a 240Ω resistor from ZQ to GND, the device sets its output impedance to 48Ω (0.2 × 240Ω), minimizing reflections and ensuring clean HSTL waveforms across voltage and temperature variations. Leaving ZQ unconnected or tying it to GND violates specification and causes undefined output drive strength.

What is the role of BWS[3:0] during a write operation?

BWS[3:0] are active-low byte write select signals that determine which 9-bit byte lanes (D[8:0] to D[35:27]) are updated during each 2-word burst write. Each BWS bit corresponds to one byte lane; asserting it enables writing new data, while deasserting preserves existing memory contents in that lane - enabling efficient partial writes without read-modify-write sequences.