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Cypress Semiconductor Corp CY7C1520KV18-250BZI

Part No.:
CY7C1520KV18-250BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1520KV18-250BZI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:286

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Product details

Overview

CY7C1520KV18-250BZI from Cypress Semiconductor is a 72-Mbit synchronous DDR-II SRAM configured as 2M × 36, operating at 250 MHz with 500 MHz effective data rate (DDR), 1.8 V core supply, HSTL I/O, and integrated echo clocks (CQ/CQ) for precise high-speed data capture in networking packet buffers and telecom line cards.

For engineers reviewing the CY7C1520KV18-250BZI datasheet, CY7C1520KV18-250BZI pinout, CY7C1520KV18-250BZI application, or CY7C1520KV18-250BZI equivalent, key selection criteria include burst-mode latency control via DOFF, dual-clock domain timing (K/K and C/C), 165-ball FBGA package compatibility, and JTAG 1149.1 test access support.

Technical Context

This device implements a two-word synchronous burst architecture with internal pipelining: address latching occurs on alternating rising edges of K and K, while write data is registered on both K and K edges. Read data is driven on rising edges of C and C - not K/K - enabling skew-compensated output timing.

The burst counter uses A0 to generate sequential 36-bit word addresses; DOFF selects between 1.5-cycle (HIGH) and 1-cycle (LOW) read latency. All I/O uses HSTL-compatible drivers with programmable impedance via ZQ pin tied to external resistor or VDDQ.

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (2M × 36 organization)
Max Clock Frequency 250 MHz (K/K input clock; enables 500 MT/s DDR data rate)
Read Latency 1 cycle when DOFF = LOW; 1.5 cycles when DOFF = HIGH
Supply Voltage 1.8 V core (VDD), 1.4–1.8 V I/O (VDDQ supports 1.5 V or 1.8 V systems)
Interface Standard HSTL Class I inputs/outputs with echo clocks CQ/CQ for source-synchronous capture
Package 165-ball FBGA (13 mm × 15 mm × 1.4 mm; RoHS-compliant)
Compliance IEEE 1149.1 JTAG Test Access Port enabled

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 × 15 mm body, 1.4 mm height, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; inputs sampled on K/K rising edges, outputs driven on C/C rising edges; tristated during deselect
K, K Input clocks (positive/negative) Capture all synchronous inputs (address, R/W, LD, BWS); define burst initiation timing and single-clock mode operation
C, C Output data clocks Drive read data edges; used with CQ/CQ for flight-time deskewing across multi-device memory subsystems
CQ, CQ Echo clocks (output) Free-running, phase-aligned copies of C/C; enable controller to latch Q[35:0] without board-level trace matching
DOFF Latency mode control Active-HIGH selects 1.5-cycle DDR-II latency; LOW enables 1-cycle DDR-I behavior for timing-critical paths
ZQ Impedance calibration reference Connects to external resistor to ground to tune DQ/CQ output driver impedance to 0.2 × RQ; cannot float or tie to GND
BWS[3:0] Byte write select (active low) Four independent controls for 36-bit data: BWS0–BWS3 each enable 9-bit byte writes; unselected bytes retain prior values
LD Load strobe Sampled on K edge to latch address and R/W state; initiates burst sequence; must be held stable for full transaction

Key Features

Feature Design Value
Two-word burst architecture Reduces external address bus toggling by 50% versus single-word SRAMs; lowers system EMI and routing complexity
Programmable read latency (DOFF) Enables dynamic trade-off between timing margin (1.5-cycle) and throughput (1-cycle) without hardware change
Integrated echo clocks (CQ/CQ) Eliminates need for matched-length data/clock traces; simplifies PCB layout for >400 MT/s DDR interfaces
HSTL I/O with ZQ calibration Ensures consistent signal integrity across voltage/temperature; supports interoperability with FPGA and ASIC memory controllers
JTAG 1149.1 boundary scan Enables in-system test and debug of solder joints and interconnects without physical probe access

Applications

Networking Packet Buffer Telecom Line Card Memory

Use Scenario: Storing variable-length Ethernet frames in ingress/egress buffering for 10Gbps+ switches.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency burst-access SRAM serving as first-level packet buffer with deterministic 1-cycle read response.

Use Value: Two-word burst mode halves address bus transitions per packet segment, reducing controller logic overhead and power consumption.

Use Scenario: Frame assembly/disassembly in OC-192 SONET/SDH line cards requiring jitter-tolerant memory access.

IC Role / Device Role / Timing Role: Synchronous DDR-II SRAM providing glitch-free data staging between framer ASIC and backplane interface.

Use Value: CQ/CQ echo clocks absorb ±150 ps flight-time skew across 12-inch PCB traces, enabling reliable 500 MT/s operation.

High-Speed Test Equipment Radar Signal Processing Buffer

Use Scenario: Capturing real-time analog-to-digital samples at 250 MSPS for protocol conformance testing.

IC Role / Device Role / Timing Role: Burst-capable SRAM acting as circular acquisition buffer with precise clock-domain crossing between ADC and processor.

Use Value: DOFF pin allows runtime switching between 1-cycle latency (for minimal pipeline delay) and 1.5-cycle (for improved setup margin under temperature variation).

Use Scenario: Storing chirp-matched filter coefficients and intermediate FFT results in pulsed radar front-ends.

IC Role / Device Role / Timing Role: Low-jitter, radiation-tolerant SRAM supporting deterministic read-modify-write sequences in safety-critical avionics.

Use Value: 1.8 V core + HSTL I/O reduces dynamic power by 35% vs. 3.3 V QDR SRAMs while maintaining 500 MT/s bandwidth.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-250BIN 2M × 36 QDR-II+ SRAM; 250 MHz clock, 1000 MT/s (quad-data-rate); no echo clocks; requires external DLL Higher bandwidth but demands tighter PCB layout control and external timing compensation circuitry Select when system requires >500 MT/s and can accommodate complex clock tree design
IS61WV204836BLL-250TQLI 2M × 36 sync SRAM; 250 MHz single-data-rate; no burst, no DDR, no echo clocks; 3.3 V only Limited to 250 MT/s; lacks burst efficiency and high-speed capture aids; incompatible with 1.8 V systems Select only for legacy 3.3 V designs where DDR complexity is unacceptable and bandwidth demand ≤250 MT/s

Compared with AS7C362000B-250BIN and IS61WV204836BLL-250TQLI, CY7C1520KV18-250BZI uniquely balances 500 MT/s DDR performance with built-in echo clocks and programmable latency-reducing system-level timing validation effort while maintaining 1.8 V compatibility.

Availability

CY7C1520KV18-250BZI is available at Aetrix Electronics and suitable for networking packet buffers, telecom line cards, high-speed test equipment, and radar signal processing buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1520KV18-250BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1520KV18 belongs to Cypress's DDR-II synchronous SRAM product line, designed specifically for bandwidth-constrained, low-latency applications in packet-switched infrastructure where deterministic timing and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C1520KV18-250BZI?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle DDR-II latency for improved timing margin; when LOW, it reverts to 1-cycle DDR-I latency for maximum throughput. This setting is sampled synchronously on the K clock edge and remains active until changed.

Can CY7C1520KV18-250BZI operate without external C and C clocks?

Yes - in single-clock mode, the device uses K and K as both input and output clocks. In this configuration, read data is driven on K/K edges instead of C/C, and CQ/CQ are generated relative to K/K. However, echo-clock benefits (skew compensation) are lost, limiting reliable operation to ≤300 MT/s.

How does ZQ pin calibration affect signal integrity?

ZQ connects to an external resistor (typically 240 Ω) to ground, calibrating DQ and CQ output driver impedance to 48 Ω (0.2 × 240 Ω). This matches standard PCB trace impedances, minimizing reflections and ensuring clean eye diagrams at 500 MT/s - critical for error-free operation in high-speed memory channels.

Is CY7C1520KV18-250BZI pin-compatible with CY7C1518KV18-250BZI?

No - although both use the same 165-ball FBGA package, pin assignments differ significantly: CY7C1518KV18 has DQ[17:0], BWS[1:0], and 22 address lines (A[21:0]), while CY7C1520KV18 uses DQ[35:0], BWS[3:0], and 21 address lines (A[20:0]). Direct substitution requires PCB redesign.

CY7C1520KV18-250BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1520KV18-250BZI FAQ

1.How can I place an order for CY7C1520KV18-250BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1520KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1520KV18-250BZI reliable?

The price and inventory of CY7C1520KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1520KV18-250BZI is usually 5 days.

3.What payment methods are accepted for CY7C1520KV18-250BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1520KV18-250BZI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1520KV18-250BZI?

CY7C1520KV18-250BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1520KV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1520KV18-250BZI?

For technical support, including CY7C1520KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1520KV18-250BZI requirements.

6.How does Aetrix verify that CY7C1520KV18-250BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1520KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1520KV18-250BZI meets industry standards.

7.What is the process for return or replacement of CY7C1520KV18-250BZI?

All CY7C1520KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1520KV18-250BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1520KV18-250BZI part is unused and in its original packaging.

Return procedure for CY7C1520KV18-250BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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