Cypress Semiconductor Corp CY7C1520KV18-250BZI
- Part No.:
- CY7C1520KV18-250BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1520KV18-250BZI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:286
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Product details
Overview
CY7C1520KV18-250BZI from Cypress Semiconductor is a 72-Mbit synchronous DDR-II SRAM configured as 2M × 36, operating at 250 MHz with 500 MHz effective data rate (DDR), 1.8 V core supply, HSTL I/O, and integrated echo clocks (CQ/CQ) for precise high-speed data capture in networking packet buffers and telecom line cards.
For engineers reviewing the CY7C1520KV18-250BZI datasheet, CY7C1520KV18-250BZI pinout, CY7C1520KV18-250BZI application, or CY7C1520KV18-250BZI equivalent, key selection criteria include burst-mode latency control via DOFF, dual-clock domain timing (K/K and C/C), 165-ball FBGA package compatibility, and JTAG 1149.1 test access support.
Technical Context
This device implements a two-word synchronous burst architecture with internal pipelining: address latching occurs on alternating rising edges of K and K, while write data is registered on both K and K edges. Read data is driven on rising edges of C and C - not K/K - enabling skew-compensated output timing.
The burst counter uses A0 to generate sequential 36-bit word addresses; DOFF selects between 1.5-cycle (HIGH) and 1-cycle (LOW) read latency. All I/O uses HSTL-compatible drivers with programmable impedance via ZQ pin tied to external resistor or VDDQ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 250 MHz (K/K input clock; enables 500 MT/s DDR data rate) |
| Read Latency | 1 cycle when DOFF = LOW; 1.5 cycles when DOFF = HIGH |
| Supply Voltage | 1.8 V core (VDD), 1.4–1.8 V I/O (VDDQ supports 1.5 V or 1.8 V systems) |
| Interface Standard | HSTL Class I inputs/outputs with echo clocks CQ/CQ for source-synchronous capture |
| Package | 165-ball FBGA (13 mm × 15 mm × 1.4 mm; RoHS-compliant) |
| Compliance | IEEE 1149.1 JTAG Test Access Port enabled |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 × 15 mm body, 1.4 mm height, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit DDR data path; inputs sampled on K/K rising edges, outputs driven on C/C rising edges; tristated during deselect |
| K, K | Input clocks (positive/negative) | Capture all synchronous inputs (address, R/W, LD, BWS); define burst initiation timing and single-clock mode operation |
| C, C | Output data clocks | Drive read data edges; used with CQ/CQ for flight-time deskewing across multi-device memory subsystems |
| CQ, CQ | Echo clocks (output) | Free-running, phase-aligned copies of C/C; enable controller to latch Q[35:0] without board-level trace matching |
| DOFF | Latency mode control | Active-HIGH selects 1.5-cycle DDR-II latency; LOW enables 1-cycle DDR-I behavior for timing-critical paths |
| ZQ | Impedance calibration reference | Connects to external resistor to ground to tune DQ/CQ output driver impedance to 0.2 × RQ; cannot float or tie to GND |
| BWS[3:0] | Byte write select (active low) | Four independent controls for 36-bit data: BWS0–BWS3 each enable 9-bit byte writes; unselected bytes retain prior values |
| LD | Load strobe | Sampled on K edge to latch address and R/W state; initiates burst sequence; must be held stable for full transaction |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces external address bus toggling by 50% versus single-word SRAMs; lowers system EMI and routing complexity |
| Programmable read latency (DOFF) | Enables dynamic trade-off between timing margin (1.5-cycle) and throughput (1-cycle) without hardware change |
| Integrated echo clocks (CQ/CQ) | Eliminates need for matched-length data/clock traces; simplifies PCB layout for >400 MT/s DDR interfaces |
| HSTL I/O with ZQ calibration | Ensures consistent signal integrity across voltage/temperature; supports interoperability with FPGA and ASIC memory controllers |
| JTAG 1149.1 boundary scan | Enables in-system test and debug of solder joints and interconnects without physical probe access |
Applications
| Networking Packet Buffer | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing variable-length Ethernet frames in ingress/egress buffering for 10Gbps+ switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency burst-access SRAM serving as first-level packet buffer with deterministic 1-cycle read response. Use Value: Two-word burst mode halves address bus transitions per packet segment, reducing controller logic overhead and power consumption. |
Use Scenario: Frame assembly/disassembly in OC-192 SONET/SDH line cards requiring jitter-tolerant memory access. IC Role / Device Role / Timing Role: Synchronous DDR-II SRAM providing glitch-free data staging between framer ASIC and backplane interface. Use Value: CQ/CQ echo clocks absorb ±150 ps flight-time skew across 12-inch PCB traces, enabling reliable 500 MT/s operation. |
| High-Speed Test Equipment | Radar Signal Processing Buffer |
|
Use Scenario: Capturing real-time analog-to-digital samples at 250 MSPS for protocol conformance testing. IC Role / Device Role / Timing Role: Burst-capable SRAM acting as circular acquisition buffer with precise clock-domain crossing between ADC and processor. Use Value: DOFF pin allows runtime switching between 1-cycle latency (for minimal pipeline delay) and 1.5-cycle (for improved setup margin under temperature variation). |
Use Scenario: Storing chirp-matched filter coefficients and intermediate FFT results in pulsed radar front-ends. IC Role / Device Role / Timing Role: Low-jitter, radiation-tolerant SRAM supporting deterministic read-modify-write sequences in safety-critical avionics. Use Value: 1.8 V core + HSTL I/O reduces dynamic power by 35% vs. 3.3 V QDR SRAMs while maintaining 500 MT/s bandwidth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-250BIN | 2M × 36 QDR-II+ SRAM; 250 MHz clock, 1000 MT/s (quad-data-rate); no echo clocks; requires external DLL | Higher bandwidth but demands tighter PCB layout control and external timing compensation circuitry | Select when system requires >500 MT/s and can accommodate complex clock tree design |
| IS61WV204836BLL-250TQLI | 2M × 36 sync SRAM; 250 MHz single-data-rate; no burst, no DDR, no echo clocks; 3.3 V only | Limited to 250 MT/s; lacks burst efficiency and high-speed capture aids; incompatible with 1.8 V systems | Select only for legacy 3.3 V designs where DDR complexity is unacceptable and bandwidth demand ≤250 MT/s |
Compared with AS7C362000B-250BIN and IS61WV204836BLL-250TQLI, CY7C1520KV18-250BZI uniquely balances 500 MT/s DDR performance with built-in echo clocks and programmable latency-reducing system-level timing validation effort while maintaining 1.8 V compatibility.
Availability
CY7C1520KV18-250BZI is available at Aetrix Electronics and suitable for networking packet buffers, telecom line cards, high-speed test equipment, and radar signal processing buffers requiring stable component supply across extended product lifecycles.
Supply support for CY7C1520KV18-250BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1520KV18 belongs to Cypress's DDR-II synchronous SRAM product line, designed specifically for bandwidth-constrained, low-latency applications in packet-switched infrastructure where deterministic timing and signal integrity are critical.
FAQ
What is the function of the DOFF pin on CY7C1520KV18-250BZI?
The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle DDR-II latency for improved timing margin; when LOW, it reverts to 1-cycle DDR-I latency for maximum throughput. This setting is sampled synchronously on the K clock edge and remains active until changed.
Can CY7C1520KV18-250BZI operate without external C and C clocks?
Yes - in single-clock mode, the device uses K and K as both input and output clocks. In this configuration, read data is driven on K/K edges instead of C/C, and CQ/CQ are generated relative to K/K. However, echo-clock benefits (skew compensation) are lost, limiting reliable operation to ≤300 MT/s.
How does ZQ pin calibration affect signal integrity?
ZQ connects to an external resistor (typically 240 Ω) to ground, calibrating DQ and CQ output driver impedance to 48 Ω (0.2 × 240 Ω). This matches standard PCB trace impedances, minimizing reflections and ensuring clean eye diagrams at 500 MT/s - critical for error-free operation in high-speed memory channels.
Is CY7C1520KV18-250BZI pin-compatible with CY7C1518KV18-250BZI?
No - although both use the same 165-ball FBGA package, pin assignments differ significantly: CY7C1518KV18 has DQ[17:0], BWS[1:0], and 22 address lines (A[21:0]), while CY7C1520KV18 uses DQ[35:0], BWS[3:0], and 21 address lines (A[20:0]). Direct substitution requires PCB redesign.
CY7C1520KV18-250BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1520KV18-250BZI FAQ
1.How can I place an order for CY7C1520KV18-250BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1520KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1520KV18-250BZI reliable?
The price and inventory of CY7C1520KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1520KV18-250BZI is usually 5 days.
3.What payment methods are accepted for CY7C1520KV18-250BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1520KV18-250BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1520KV18-250BZI?
CY7C1520KV18-250BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1520KV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1520KV18-250BZI?
For technical support, including CY7C1520KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1520KV18-250BZI requirements.
6.How does Aetrix verify that CY7C1520KV18-250BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1520KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1520KV18-250BZI meets industry standards.
7.What is the process for return or replacement of CY7C1520KV18-250BZI?
All CY7C1520KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1520KV18-250BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1520KV18-250BZI part is unused and in its original packaging.
Return procedure for CY7C1520KV18-250BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1520KV18-250BZI Tags

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