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Cypress Semiconductor Corp CY7C1520KV18-250BZXI

Part No.:
CY7C1520KV18-250BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1520KV18-250BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
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Inventory:831

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Product details

Overview

CY7C1520KV18-250BZXI from Cypress Semiconductor is a 72-Mbit synchronous DDR-II SRAM configured as 2M × 36, operating at 250 MHz with 1.8 V core supply and HSTL I/O. It implements two-word burst architecture with dual input clocks (K/K) and dual output clocks (C/C), supports echo clocks (CQ/CQ) for timing alignment, and delivers 500 MB/s bandwidth via double-data-rate transfers on 36-bit bus.

For engineers reviewing the CY7C1520KV18-250BZXI datasheet, CY7C1520KV18-250BZXI pinout, CY7C1520KV18-250BZXI application, or CY7C1520KV18-250BZXI equivalent, key selection criteria include DDR-II read latency (1.5 cycles with DOFF HIGH), programmable output drive strength via ZQ calibration, JTAG 1149.1 test access, and FBGA-165 package compatibility with high-speed memory subsystems requiring precise clock skew management.

Technical Context

This device uses a synchronous pipelined architecture with internal burst counter driven by A0, enabling sequential two-word reads/writes per address latch. All synchronous inputs (R/W, LD, BWS[3:0], A[20:0]) are registered on rising edges of K and K clocks, while data outputs (DQ[35:0]) are edge-aligned to C/C or K/K in single-clock mode.

The DDR-II interface relies on phase-locked loop (PLL) circuitry for accurate data placement and employs echo clocks CQ/CQ referenced to C/C to eliminate board-level flight-time mismatches. Output impedance is dynamically calibrated via ZQ pin against external resistor to ground, setting DQ/CQ/CQ drive strength to 0.2 × RQ.

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (2M × 36 configuration)
Max Clock Frequency 250 MHz - determines maximum sustained throughput of 500 MB/s (36-bit × 250 MHz × 2)
Read Latency 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - directly impacts memory controller pipeline depth and wait-state insertion
Supply Voltage 1.8 V core (VDD), 1.4–1.8 V I/O (VDDQ) - enables interoperability with 1.5 V or 1.8 V HSTL systems
Package 165-ball FBGA (13 × 15 × 1.4 mm) - provides 0.8 mm ball pitch for high-density routing and thermal dissipation
Interface Standard HSTL Class I inputs/outputs - ensures signal integrity at 666 MT/s effective data rate with controlled slew and termination
JTAG Support IEEE 1149.1 compliant TAP - enables boundary-scan testing without additional probe points on PCB

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant (BZXI suffix denotes Pb-free).

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; drives on rising edges of C/C (or K/K); tristated during deselect; shares pins with write inputs
K / K Positive/negative input clocks Capture all synchronous inputs (address, R/W, LD, BWS); define burst initiation timing; used for data output in single-clock mode
C / C Positive/negative output data clocks Source-synchronous clocking for DQ outputs; enables deskewing across multiple SRAMs; referenced by CQ/CQ
CQ / CQ Echo clocks Free-running copies of C/C synchronized to output data edges; simplify capture timing at memory controller without per-pin delay tuning
DOFF DDR operation mode select LOW → DDR-I mode (1-cycle read latency); HIGH → DDR-II mode (1.5-cycle read latency); sets internal pipeline behavior
ZQ Output impedance calibration reference Connects to external resistor to ground; calibrates DQ/CQ/CQ drive strength to 0.2 × RQ; cannot be left floating or tied to GND
BWS[3:0] Byte write select (active LOW) Four independent controls for 36-bit bus: BWS0–BWS3 each enable 9-bit byte writes; preserves unselected bytes during partial writes
LD Load strobe Active LOW; latches address and R/W state on next K/K edge; initiates burst sequence; defines transaction boundary

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling frequency by 50% versus single-word access - lowers EMI and simplifies controller address generation logic
Programmable output drive via ZQ Enables dynamic impedance matching to PCB trace characteristics - improves signal integrity without fixed external termination resistors
Dual echo clocks (CQ/CQ) Eliminates need for per-device capture delay tuning in multi-SRAM systems - reduces FPGA/ASIC I/O timing closure effort
JTAG 1149.1 boundary scan Supports automated PCB test coverage for solder joint and interconnect faults - critical for high-reliability industrial and telecom assemblies
Variable read latency mode (DOFF) Allows runtime switching between 1-cycle (DDR-I) and 1.5-cycle (DDR-II) latency - enables optimization for latency-sensitive vs. bandwidth-sensitive workloads

Applications

Telecom Line Cards Network Packet Buffers

Use Scenario: High-speed packet buffering in 10G/25G Ethernet line cards where deterministic latency and burst throughput are required.

IC Role / Device Role / Timing Role: Primary burst-access SRAM serving as first-level packet buffer between SERDES PHY and traffic manager ASIC.

Use Value: 250 MHz DDR-II operation delivers 500 MB/s sustained bandwidth; echo clocks align data capture across multiple SRAMs sharing same controller interface.

Use Scenario: Temporary storage of fragmented IP packets in deep-buffering switches before reassembly or forwarding.

IC Role / Device Role / Timing Role: Synchronous burst SRAM providing low-latency, high-throughput data staging between ingress and egress pipelines.

Use Value: Two-word burst reduces address bus activity by half; DOFF-selectable latency allows tuning for cut-through vs. store-and-forward modes.

Medical Imaging Data Acquisition Test & Measurement Digitizers

Use Scenario: Real-time acquisition of parallel ADC streams (e.g., ultrasound beamforming or MRI gradient control) requiring burst-aligned memory writes.

IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory buffer capturing time-critical sensor data with precise clock domain isolation.

Use Value: HSTL I/O and 1.8 V supply ensure noise immunity in mixed-signal environments; ZQ calibration maintains signal fidelity across temperature.

Use Scenario: High-resolution waveform digitization in oscilloscopes and logic analyzers where sample depth exceeds on-chip memory.

IC Role / Device Role / Timing Role: External burst SRAM acting as deep sample buffer synchronized to high-speed sampling clock domain.

Use Value: C/C and CQ/CQ pairing enables reliable data capture at 666 MT/s effective rate; JTAG support aids production test of dense memory subsystems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256A-25JCIN Asynchronous 256K × 16 SRAM, no DDR, no burst, 1.8 V only, SOJ-44 package Lacks DDR timing, echo clocks, and burst capability - suitable only for legacy controllers without DDR support Select only if system lacks DDR clocking infrastructure and requires simple address/data multiplexing.
IS61WV102432BLL-10BLI Synchronous 1M × 32 QDR SRAM, 10 ns read latency, 1.8 V, 165-ball FBGA, no echo clocks QDR interface (separate read/write ports) instead of DDR; higher latency but concurrent access capability Prefer when simultaneous read/write operations dominate over burst bandwidth; not drop-in compatible due to protocol mismatch.

Compared with AS7C3256A-25JCIN and IS61WV102432BLL-10BLI, CY7C1520KV18-250BZXI uniquely combines DDR-II burst efficiency, echo-clock–assisted timing closure, and ZQ-calibrated drive strength - making it optimal for bandwidth-constrained, high-speed serial fabric interfaces where deterministic latency and signal integrity are co-primary requirements.

Availability

CY7C1520KV18-250BZXI is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, medical imaging data acquisition, and test & measurement digitizers requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1520KV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with focus on signal integrity and timing precision.

The CY7C15xx KV18 series targets high-speed memory subsystems in networking and instrumentation, delivering DDR-II burst SRAMs optimized for deterministic latency, scalable bandwidth, and board-level timing convergence.

FAQ

What is the function of the DOFF pin on CY7C1520KV18-250BZXI?

The DOFF pin selects DDR-II read latency mode: when asserted HIGH, it enables 1.5-cycle read latency with enhanced timing margin for high-frequency operation; when LOW, the device operates in DDR-I mode with 1-cycle latency. This is a static configuration pin sampled at power-up and during reset - it does not support dynamic switching during active operation.

Can CY7C1520KV18-250BZXI operate without external C and C clocks?

Yes - the device supports single-clock mode using only K and K for both input capture and output driving. In this mode, CQ and CQ are generated relative to K/K instead of C/C, and data output timing references K/K edges. However, echo-clock benefits (flight-time deskew) are lost, and system-level timing margin decreases at 250 MHz.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external precision resistor (typically 240 Ω) to ground, enabling internal calibration circuitry to set DQ, CQ, and CQ output driver strength to 0.2 × RQ (e.g., 48 Ω). The calibration occurs automatically at power-up and can be retriggered via JTAG instruction. ZQ must never be left floating or tied directly to GND or VDDQ.

Is CY7C1520KV18-250BZXI pin-compatible with CY7C1518KV18-250BZXI?

No - although both use 165-ball FBGA packages, their pinouts differ significantly: CY7C1518KV18 has DQ[17:0] and BWS[1:0], while CY7C1520KV18 has DQ[35:0] and BWS[3:0]. Address count differs (22 vs. 21 bits), and ball assignments for BWS, DQ, and auxiliary signals are not aligned. PCB layout is not interchangeable.

CY7C1520KV18-250BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1520KV18-250BZXI FAQ

1.How can I place an order for CY7C1520KV18-250BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1520KV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1520KV18-250BZXI reliable?

The price and inventory of CY7C1520KV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1520KV18-250BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1520KV18-250BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1520KV18-250BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1520KV18-250BZXI?

CY7C1520KV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1520KV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1520KV18-250BZXI?

For technical support, including CY7C1520KV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1520KV18-250BZXI requirements.

6.How does Aetrix verify that CY7C1520KV18-250BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1520KV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1520KV18-250BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1520KV18-250BZXI?

All CY7C1520KV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1520KV18-250BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1520KV18-250BZXI part is unused and in its original packaging.

Return procedure for CY7C1520KV18-250BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1520KV18-250BZXI Tags

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