Cypress Semiconductor Corp CY7C1520KV18-300BZC

Overview

CY7C1520KV18-300BZC from Cypress Semiconductor is a 72-Mbit synchronous DDR-II SRAM configured as 2M × 36, operating at 300 MHz clock frequency with double-data-rate (600 MHz effective data rate), 1.8 V core supply, and HSTL I/O compatible with 1.5 V or 1.8 V VDDQ. It implements two-word burst reads/writes and supports programmable output impedance via ZQ calibration. Used in high-bandwidth networking line cards for packet buffering.

For engineers reviewing the CY7C1520KV18-300BZC datasheet, CY7C1520KV18-300BZC pinout, CY7C1520KV18-300BZC application, or CY7C1520KV18-300BZC equivalent, key selection criteria include DDR-II burst timing, echo clock (CQ/CQ) synchronization capability, DOFF-configurable read latency (1 or 1.5 cycles), and 165-ball FBGA mechanical compatibility with high-density PCB layouts.

Technical Context

This SRAM uses dual input clocks (K/K) to latch address and control signals on alternating rising edges, enabling precise DDR timing without requiring external phase alignment. Internal burst logic increments A0 to generate sequential 36-bit word addresses during each access.

Read data is driven synchronously on both C and C rising edges, with echo clocks CQ/CQ phase-aligned to C/C to simplify system-level data capture. The device integrates a PLL for accurate internal data placement and supports JTAG 1149.1 boundary scan for production testability.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR-II SRAM applications.

Compared with AS7C362000B-300BIN and IS61WV102432BLL-300TQLI, CY7C1520KV18-300BZC uniquely delivers DDR-II burst bandwidth, echo-clock–assisted timing closure, and on-die impedance tuning-critical for 10G+ systems where signal integrity and deterministic latency dominate.

Availability

CY7C1520KV18-300BZC is available at Aetrix Electronics and suitable for telecom infrastructure, automated test equipment, industrial motion control, and avionics data acquisition requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1520KV18-300BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded systems, with focus on reliability, signal integrity, and system-level integration.

CY7C1520KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for applications needing deterministic low-latency burst access, echo-clock–synchronized data capture, and robust operation in high-speed communication and test instrumentation platforms.

FAQ

What is the function of the DOFF pin on CY7C1520KV18-300BZC?

The DOFF pin selects read latency mode: when asserted LOW, the device operates in DDR-I mode with 1-cycle read latency; when HIGH, it enables DDR-II mode with 1.5-cycle latency. This setting directly controls internal pipeline staging and must be stable before initialization. It does not affect write timing or burst behavior.

Can CY7C1520KV18-300BZC operate with only K and K clocks, without C and C?

Yes - in single-clock mode, the device uses K and K for both input capture and output driving. Read data appears on DQ[35:0] aligned to K/K rising edges, and CQ/CQ are generated relative to K/K instead of C/C. Echo clock functionality remains active but references the input clock domain, preserving source-synchronous capture capability.

How is output impedance calibrated using the ZQ pin?

ZQ connects to a 240 Ω resistor to ground, enabling on-die calibration that adjusts DQ and CQ driver strength to target 60 Ω (0.2 × 240 Ω). This occurs automatically at power-up and can be retriggered via JTAG. Direct connection to VDDQ forces minimum impedance (~40 Ω); floating or grounding ZQ is prohibited and may cause undefined output behavior.

What is the role of BWS[3:0] in byte-write operations?

BWS[3:0] are active-LOW byte write enables: BWS0 controls DQ[8:0], BWS1 controls DQ[17:9], BWS2 controls DQ[26:18], and BWS3 controls DQ[35:27]. All four are sampled on the same K/K edge as write data. Unasserted BWS lines preserve corresponding byte lanes during partial writes, enabling efficient update of sub-36-bit fields without read-modify-write cycles.