Cypress Semiconductor Corp CY7C1520KV18-300BZXI

Overview

CY7C1520KV18-300BZXI from Cypress Semiconductor is a 72-Mbit synchronous DDR-II SRAM configured as 2M × 36, operating at 300 MHz clock frequency with double-data-rate (600 MHz effective data rate), 1.8 V core supply, and HSTL I/O compatible with 1.5 V or 1.8 V IO supply - deployed in high-bandwidth packet buffering for telecom line cards.

For engineers reviewing the CY7C1520KV18-300BZXI datasheet, CY7C1520KV18-300BZXI pinout, CY7C1520KV18-300BZXI application, or CY7C1520KV18-300BZXI equivalent, key selection criteria include burst-mode latency control via DOFF, echo-clock–assisted data capture (CQ/CQ), dual-output-clock deskewing (C/C), JTAG 1149.1 testability, and FBGA-165 package thermal/mechanical compatibility.

Technical Context

This device implements a synchronous pipelined architecture with two-word burst addressing driven by A0 and internal burst counter logic, enabling sequential 36-bit word reads/writes per access cycle. All synchronous inputs (R/W, LD, BWS[3:0], A[20:0]) are registered on rising edges of K/K clocks, while output data (DQ[35:0]) is edge-aligned to C/C or K/K in single-clock mode.

The DDR-II interface supports programmable read latency: 1.5-cycle when DOFF = HIGH (DDR-II mode) or 1-cycle when DOFF = LOW (DDR-I compatibility mode). Echo clocks CQ/CQ are phase-synchronized to C/C and provide deterministic timing references for controller-side data capture, eliminating board-level flight-time compensation.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option (BZXI suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with AS7C362000B-300BIN and IS61WV102436BLL-300BLI, CY7C1520KV18-300BZXI uniquely delivers DDR-II burst bandwidth, echo-clock–assisted timing closure, and DOFF-configurable latency - making it the only option supporting deterministic >2 GB/s throughput in space-constrained telecom and test equipment designs.

Availability

CY7C1520KV18-300BZXI is available at Aetrix Electronics and suitable for telecom line cards, network processor interfaces, high-speed test equipment, and radar signal processing systems requiring stable component supply across extended production lifecycles.

Supply support for CY7C1520KV18-300BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

CY7C1520KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for deterministic, low-jitter, high-bandwidth buffering in packet-switched infrastructure and real-time signal acquisition systems.

FAQ

What is the function of the DOFF pin on CY7C1520KV18-300BZXI?

The DOFF (DDR Off) pin selects read latency mode: when asserted HIGH, the device operates in DDR-II mode with 1.5-cycle read latency for improved timing margin; when LOW, it reverts to DDR-I timing with 1-cycle latency. This pin is sampled synchronously on the rising edge of K and remains latched until the next power-up or reset sequence.

Can CY7C1520KV18-300BZXI operate without external C and C clocks?

Yes - the device supports single-clock mode where K and K serve as both input and output timing references. In this configuration, read data is driven on K/K edges instead of C/C, and CQ/CQ are generated relative to K/K. However, deskew capability and maximum timing margin are reduced compared to dual-clock operation.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external precision resistor (RQ) tied to ground; the device measures RQ and configures its DQ, CQ, and CQ output drivers to 0.2 × RQ. For example, a 100 Ω RQ yields 20 Ω driver impedance. Direct connection to VDDQ enables minimum impedance mode (~12 Ω), but grounding or leaving ZQ floating is prohibited and may cause functional failure.

Is CY7C1520KV18-300BZXI pin-compatible with CY7C1518KV18-300BZXI?

No - although both use the same 165-ball FBGA package, their pinouts differ significantly: CY7C1518KV18 (4M × 18) uses DQ[17:0] and BWS[1:0], while CY7C1520KV18 (2M × 36) uses DQ[35:0] and BWS[3:0], with distinct address bus widths (A[21:0] vs. A[20:0]) and different ball assignments for BWS and DQ signals. Board redesign is required for substitution.