Cypress Semiconductor Corp CY7C1520KV18-333BZC

Overview

CY7C1520KV18-333BZC from Cypress Semiconductor is a 72-Mbit synchronous DDR-II SRAM configured as 2M × 36, operating at 333 MHz clock frequency with double-data-rate (666 MHz effective) I/O, 1.8 V core supply, and HSTL-compatible interfaces. It implements two-word burst addressing, echo clocks (CQ/CQ), and programmable output impedance via ZQ pin for high-speed memory subsystems in networking line cards and packet buffering applications.

For engineers reviewing the CY7C1520KV18-333BZC datasheet, CY7C1520KV18-333BZC pinout, CY7C1520KV18-333BZC application, or CY7C1520KV18-333BZC equivalent, key selection criteria include DDR-II read latency (1.5 cycles with DOFF HIGH), dual-clock domain support (K/K and C/C), 165-ball FBGA package compatibility, and JTAG 1149.1 test access capability.

Technical Context

The CY7C1520KV18-333BZC integrates a pipelined SRAM core with synchronous peripheral logic, a 1-bit burst counter, and phase-locked loop (PLL) for precise data placement. Address latching occurs on alternate rising edges of K/K, while write data is registered on both K and K edges.

Read data is driven synchronously on rising edges of C/C (or K/K in single-clock mode), with echo clocks CQ/CQ aligned to C/C to eliminate board-level skew. Output impedance is calibrated via ZQ pin tied to external resistor (0.2 × RQ) or VDDQ for minimum drive strength.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C3256A-15JCIN and IS61WV102432BLL-10BLI, CY7C1520KV18-333BZC delivers 2.2× higher effective bandwidth (666 MT/s vs ≤200 MT/s), integrated skew compensation via CQ/CQ, and programmable drive strength - making it uniquely suited for telecom and high-end embedded memory subsystems demanding both speed and signal integrity.

Availability

CY7C1520KV18-333BZC is available at Aetrix Electronics and suitable for packet buffering, telecom line card memory, real-time video frame storage, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1520KV18-333BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1520KV18 belongs to Cypress's DDR-II synchronous SRAM product line, designed specifically for high-bandwidth, low-latency memory subsystems in networking infrastructure and real-time embedded systems where burst efficiency and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C1520KV18-333BZC?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle latency; when LOW, it configures the device for DDR-I behavior with 1-cycle latency. This hardware-selectable feature allows system designers to trade off timing margin against throughput without firmware changes or clock tree modifications.

How does the ZQ pin calibrate output impedance?

The ZQ pin connects to an external precision resistor (RQ) tied to ground, enabling on-die calibration of HSTL output drivers to 0.2 × RQ. Alternatively, tying ZQ to VDDQ activates minimum-impedance mode. This eliminates manual PCB trace impedance tuning and maintains consistent signal rise/fall times across voltage and temperature variations.

Can CY7C1520KV18-333BZC operate without C and C clocks?

Yes - the device supports single-clock mode where K and K serve as both input and output clocks. In this configuration, read data is driven on rising edges of K/K instead of C/C, and echo clocks CQ/CQ are generated relative to K. However, dual-clock mode (C/C) is required to achieve full DDR-II timing benefits including flight-time deskewing.

What is the purpose of BWS[3:0] in CY7C1520KV18-333BZC?

BWS[3:0] are active-Low byte write select signals that independently enable writing to four 9-bit segments of the 36-bit data bus (D[8:0], D[17:9], D[26:18], D[35:27]). During a write cycle, only bytes with asserted BWS remain updated; others retain prior values - enabling efficient partial-word updates without read-modify-write overhead.