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Cypress Semiconductor Corp CY7C1520KV18-333BZXI

Part No.:
CY7C1520KV18-333BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1520KV18-333BZXI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:858

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Product details

Overview

CY7C1520KV18-333BZXI from Cypress Semiconductor is a 72-Mbit synchronous DDR-II SRAM configured as 2M × 36, operating at 333 MHz clock frequency with double-data-rate (666 MHz effective) I/O, 1.8 V core supply, and HSTL-compatible interfaces. It implements two-word burst addressing, echo clocks (CQ/CQ), and a PLL for precise data placement-used in high-bandwidth packet buffering and network switch fabric memory subsystems.

For engineers reviewing the CY7C1520KV18-333BZXI datasheet, CY7C1520KV18-333BZXI pinout, CY7C1520KV18-333BZXI application, or CY7C1520KV18-333BZXI equivalent, key selection criteria include DDR-II read latency (1.5 cycles with DOFF HIGH), dual-clock domain support (K/K and C/C), 165-ball FBGA package compatibility, and JTAG 1149.1 test access capability.

Technical Context

The CY7C1520KV18-333BZXI integrates a pipelined SRAM core with synchronous peripheral logic, using a 1-bit burst counter driven by A0 to generate sequential 36-bit word pairs on each access. All address, control, and write data inputs are registered on rising edges of complementary K/K clocks.

Read data is output-synchronized to rising edges of C/C clocks (or K/K in single-clock mode), with echo clocks CQ/CQ phase-aligned to C/C to simplify system-level timing capture. The device supports programmable output impedance via ZQ pin and operates with either 1.5 V or 1.8 V VDDQ, enabling interoperability with mixed-voltage DDR-I/II systems.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit / 2M × 36 - provides 72 million bits in 36-bit wide words, supporting high-throughput line-rate buffering.
Max Clock Frequency 333 MHz - enables 666 MT/s effective data rate with DDR interface, meeting OC-192 and 10GbE packet buffer timing.
Read Latency 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable latency mode allows trade-off between timing margin and pipeline depth.
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - supports flexible IO voltage scaling and backward compatibility with DDR-I systems.
Package 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - fine-pitch BGA optimized for high-density routing and thermal dissipation in telecom modules.
JTAG Support IEEE 1149.1 compliant TAP - enables boundary scan testing and in-system debug without additional probe points.
Output Drive Variable-drive HSTL outputs - configurable impedance matching via ZQ pin reduces signal integrity issues on long traces.

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant (Pb-free).

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; inputs sampled on K/K rising edges, outputs driven on C/C rising edges with echo-clock alignment.
K / K Complementary input clocks Primary timing reference for all synchronous inputs; used for address/control latching and write data capture.
C / C Complementary output clocks Deskew-capable clocks for read data output; enable board-level flight-time compensation across multiple SRAMs.
CQ / CQ Echo clocks Free-running, phase-aligned copies of C/C; allow controller to capture Q[35:0] with minimal setup/hold uncertainty.
LD Load strobe Active-low synchronous enable that defines start of burst transaction; must be asserted before R/W and address sampling.
BWS[3:0] Byte write select Four active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]); enables partial-word writes without read-modify-write.
DOFF DDR latency mode select High = DDR-II mode (1.5-cycle read latency); Low = DDR-I mode (1-cycle read latency); sets internal timing path configuration.
ZQ Impedance calibration input Connects to external 240 Ω resistor to GND; tunes output driver impedance to match PCB trace Z₀ (typically 50 Ω differential).

Key Features

Feature Design Value
Two-word burst architecture Reduces external address bus toggling by 50% per access-lowers EMI and simplifies controller address generation logic.
Programmable output impedance (ZQ) Enables dynamic driver strength tuning to match varying PCB stackup and trace length, improving signal integrity without layout re-spin.
Dual-clock domain (K/K + C/C) Decouples input capture and output launch timing, allowing independent optimization of setup/hold margins for controller-to-SRAM and SRAM-to-controller paths.
PLL-based data placement Ensures deterministic skew between C/C and Q[35:0] outputs, eliminating need for per-lane delay tuning in high-speed designs.
JTAG 1149.1 boundary scan Supports automated manufacturing test and in-field diagnostics without requiring dedicated test fixtures or physical probe access.

Applications

Telecom Line Cards Network Switch Buffers

Use Scenario: Storing ingress/egress packet headers and metadata in OC-192/STM-64 line interface units.

IC Role / Device Role / Timing Role: High-speed burst-access SRAM acting as first-level packet descriptor cache, synchronized to line-rate clock domains.

Use Value: 333 MHz DDR-II operation delivers 2.4 GB/s bandwidth-sufficient for full-duplex 10 Gbps traffic with sub-10 ns access granularity.

Use Scenario: Buffering variable-length Ethernet frames in Layer-2/Layer-3 switching ASICs.

IC Role / Device Role / Timing Role: Shared memory resource for ingress queue management, supporting concurrent read/write with byte-select granularity.

Use Value: BWS[3:0] enables selective 9-bit lane writes, reducing power and bus contention during partial-frame updates.

Test Equipment Memory Radar Signal Processing

Use Scenario: Capturing high-resolution waveform samples in digital storage oscilloscopes and protocol analyzers.

IC Role / Device Role / Timing Role: Burst-mode acquisition memory interfaced directly to ADC output buses and FPGA controllers.

Use Value: Echo clocks CQ/CQ eliminate timing closure challenges when capturing 666 MT/s data streams across multi-channel systems.

Use Scenario: Storing intermediate FFT coefficients and range-Doppler maps in airborne SAR processors.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed by DSP cores under deterministic real-time constraints.

Use Value: Configurable DOFF pin allows 1-cycle latency mode for critical loop iterations, reducing pipeline stalls in compute-bound kernels.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256A-15TIN Asynchronous 256K × 16 SRAM, 15 ns access, no DDR interface or burst logic Used in legacy control-plane buffers where timing determinism > bandwidth; lacks echo clocks and JTAG Select only if system lacks DDR clock infrastructure and requires simple parallel interface with no burst dependency.
IS61WV102418BLL-10BLI Synchronous 1M × 18 SRAM, 10 ns cycle time, single-data-rate, no C/C or CQ/CQ support Suitable for lower-bandwidth control buffers in industrial PLCs; no programmable impedance or DOFF latency selection Choose when cost sensitivity outweighs bandwidth needs and echo-clock timing simplification is unnecessary.

Compared with AS7C3256A-15TIN and IS61WV102418BLL-10BLI, CY7C1520KV18-333BZXI uniquely delivers DDR-II bandwidth with deterministic echo-clock timing and field-configurable latency-critical for line-rate telecom and radar processing where jitter-sensitive burst transfers dominate.

Availability

CY7C1520KV18-333BZXI is available at Aetrix Electronics and suitable for telecom line cards, network switch buffers, test equipment memory, and radar signal processing requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7C1520KV18-333BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level timing robustness.

CY7C1520KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for deterministic, low-jitter, high-bandwidth buffering in packet-switched and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1520KV18-333BZXI?

The DOFF pin selects DDR-II read latency mode: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it configures the device for 1-cycle DDR-I latency. This setting determines internal clock-to-output delay paths and must be held stable during operation.

Can CY7C1520KV18-333BZXI operate with only K and K clocks, without C and C?

Yes-the device supports single-clock mode where C and C are tied to K and K respectively. In this configuration, read data is output-synchronized to K/K edges, and echo clocks CQ/CQ derive from K/K. However, deskew capability and maximum timing margin are reduced compared to dual-clock operation.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external 240 Ω resistor to ground, enabling on-die calibration of HSTL output drivers to match 50 Ω differential trace impedance. This adjusts output slew rate and termination, minimizing reflections and ensuring clean eye diagrams at 666 MT/s-no external series resistors required.

Is CY7C1520KV18-333BZXI pin-compatible with CY7C1518KV18-333BZXI?

No-they share the same 165-ball FBGA footprint but differ in pin assignment: CY7C1520KV18 uses BWS[3:0] and DQ[35:0], while CY7C1518 uses BWS[1:0] and DQ[17:0]. Address count also differs (21 vs. 22 pins), making direct substitution impossible without PCB redesign and firmware adaptation.

CY7C1520KV18-333BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1520KV18-333BZXI FAQ

1.How can I place an order for CY7C1520KV18-333BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1520KV18-333BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1520KV18-333BZXI reliable?

The price and inventory of CY7C1520KV18-333BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1520KV18-333BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1520KV18-333BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1520KV18-333BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1520KV18-333BZXI?

CY7C1520KV18-333BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1520KV18-333BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1520KV18-333BZXI?

For technical support, including CY7C1520KV18-333BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1520KV18-333BZXI requirements.

6.How does Aetrix verify that CY7C1520KV18-333BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1520KV18-333BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1520KV18-333BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1520KV18-333BZXI?

All CY7C1520KV18-333BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1520KV18-333BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1520KV18-333BZXI part is unused and in its original packaging.

Return procedure for CY7C1520KV18-333BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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