Cypress Semiconductor Corp CY7C1520KV18-333BZXI
- Part No.:
- CY7C1520KV18-333BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1520KV18-333BZXI.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1520KV18-333BZXI from Cypress Semiconductor is a 72-Mbit synchronous DDR-II SRAM configured as 2M × 36, operating at 333 MHz clock frequency with double-data-rate (666 MHz effective) I/O, 1.8 V core supply, and HSTL-compatible interfaces. It implements two-word burst addressing, echo clocks (CQ/CQ), and a PLL for precise data placement-used in high-bandwidth packet buffering and network switch fabric memory subsystems.
For engineers reviewing the CY7C1520KV18-333BZXI datasheet, CY7C1520KV18-333BZXI pinout, CY7C1520KV18-333BZXI application, or CY7C1520KV18-333BZXI equivalent, key selection criteria include DDR-II read latency (1.5 cycles with DOFF HIGH), dual-clock domain support (K/K and C/C), 165-ball FBGA package compatibility, and JTAG 1149.1 test access capability.
Technical Context
The CY7C1520KV18-333BZXI integrates a pipelined SRAM core with synchronous peripheral logic, using a 1-bit burst counter driven by A0 to generate sequential 36-bit word pairs on each access. All address, control, and write data inputs are registered on rising edges of complementary K/K clocks.
Read data is output-synchronized to rising edges of C/C clocks (or K/K in single-clock mode), with echo clocks CQ/CQ phase-aligned to C/C to simplify system-level timing capture. The device supports programmable output impedance via ZQ pin and operates with either 1.5 V or 1.8 V VDDQ, enabling interoperability with mixed-voltage DDR-I/II systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 72 Mbit / 2M × 36 - provides 72 million bits in 36-bit wide words, supporting high-throughput line-rate buffering. |
| Max Clock Frequency | 333 MHz - enables 666 MT/s effective data rate with DDR interface, meeting OC-192 and 10GbE packet buffer timing. |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable latency mode allows trade-off between timing margin and pipeline depth. |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - supports flexible IO voltage scaling and backward compatibility with DDR-I systems. |
| Package | 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - fine-pitch BGA optimized for high-density routing and thermal dissipation in telecom modules. |
| JTAG Support | IEEE 1149.1 compliant TAP - enables boundary scan testing and in-system debug without additional probe points. |
| Output Drive | Variable-drive HSTL outputs - configurable impedance matching via ZQ pin reduces signal integrity issues on long traces. |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant (Pb-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit DDR data path; inputs sampled on K/K rising edges, outputs driven on C/C rising edges with echo-clock alignment. |
| K / K | Complementary input clocks | Primary timing reference for all synchronous inputs; used for address/control latching and write data capture. |
| C / C | Complementary output clocks | Deskew-capable clocks for read data output; enable board-level flight-time compensation across multiple SRAMs. |
| CQ / CQ | Echo clocks | Free-running, phase-aligned copies of C/C; allow controller to capture Q[35:0] with minimal setup/hold uncertainty. |
| LD | Load strobe | Active-low synchronous enable that defines start of burst transaction; must be asserted before R/W and address sampling. |
| BWS[3:0] | Byte write select | Four active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]); enables partial-word writes without read-modify-write. |
| DOFF | DDR latency mode select | High = DDR-II mode (1.5-cycle read latency); Low = DDR-I mode (1-cycle read latency); sets internal timing path configuration. |
| ZQ | Impedance calibration input | Connects to external 240 Ω resistor to GND; tunes output driver impedance to match PCB trace Z₀ (typically 50 Ω differential). |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces external address bus toggling by 50% per access-lowers EMI and simplifies controller address generation logic. |
| Programmable output impedance (ZQ) | Enables dynamic driver strength tuning to match varying PCB stackup and trace length, improving signal integrity without layout re-spin. |
| Dual-clock domain (K/K + C/C) | Decouples input capture and output launch timing, allowing independent optimization of setup/hold margins for controller-to-SRAM and SRAM-to-controller paths. |
| PLL-based data placement | Ensures deterministic skew between C/C and Q[35:0] outputs, eliminating need for per-lane delay tuning in high-speed designs. |
| JTAG 1149.1 boundary scan | Supports automated manufacturing test and in-field diagnostics without requiring dedicated test fixtures or physical probe access. |
Applications
| Telecom Line Cards | Network Switch Buffers |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in OC-192/STM-64 line interface units. IC Role / Device Role / Timing Role: High-speed burst-access SRAM acting as first-level packet descriptor cache, synchronized to line-rate clock domains. Use Value: 333 MHz DDR-II operation delivers 2.4 GB/s bandwidth-sufficient for full-duplex 10 Gbps traffic with sub-10 ns access granularity. |
Use Scenario: Buffering variable-length Ethernet frames in Layer-2/Layer-3 switching ASICs. IC Role / Device Role / Timing Role: Shared memory resource for ingress queue management, supporting concurrent read/write with byte-select granularity. Use Value: BWS[3:0] enables selective 9-bit lane writes, reducing power and bus contention during partial-frame updates. |
| Test Equipment Memory | Radar Signal Processing |
|
Use Scenario: Capturing high-resolution waveform samples in digital storage oscilloscopes and protocol analyzers. IC Role / Device Role / Timing Role: Burst-mode acquisition memory interfaced directly to ADC output buses and FPGA controllers. Use Value: Echo clocks CQ/CQ eliminate timing closure challenges when capturing 666 MT/s data streams across multi-channel systems. |
Use Scenario: Storing intermediate FFT coefficients and range-Doppler maps in airborne SAR processors. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed by DSP cores under deterministic real-time constraints. Use Value: Configurable DOFF pin allows 1-cycle latency mode for critical loop iterations, reducing pipeline stalls in compute-bound kernels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR-II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256A-15TIN | Asynchronous 256K × 16 SRAM, 15 ns access, no DDR interface or burst logic | Used in legacy control-plane buffers where timing determinism > bandwidth; lacks echo clocks and JTAG | Select only if system lacks DDR clock infrastructure and requires simple parallel interface with no burst dependency. |
| IS61WV102418BLL-10BLI | Synchronous 1M × 18 SRAM, 10 ns cycle time, single-data-rate, no C/C or CQ/CQ support | Suitable for lower-bandwidth control buffers in industrial PLCs; no programmable impedance or DOFF latency selection | Choose when cost sensitivity outweighs bandwidth needs and echo-clock timing simplification is unnecessary. |
Compared with AS7C3256A-15TIN and IS61WV102418BLL-10BLI, CY7C1520KV18-333BZXI uniquely delivers DDR-II bandwidth with deterministic echo-clock timing and field-configurable latency-critical for line-rate telecom and radar processing where jitter-sensitive burst transfers dominate.
Availability
CY7C1520KV18-333BZXI is available at Aetrix Electronics and suitable for telecom line cards, network switch buffers, test equipment memory, and radar signal processing requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for CY7C1520KV18-333BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level timing robustness.
CY7C1520KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for deterministic, low-jitter, high-bandwidth buffering in packet-switched and real-time signal processing systems.
FAQ
What is the function of the DOFF pin on CY7C1520KV18-333BZXI?
The DOFF pin selects DDR-II read latency mode: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it configures the device for 1-cycle DDR-I latency. This setting determines internal clock-to-output delay paths and must be held stable during operation.
Can CY7C1520KV18-333BZXI operate with only K and K clocks, without C and C?
Yes-the device supports single-clock mode where C and C are tied to K and K respectively. In this configuration, read data is output-synchronized to K/K edges, and echo clocks CQ/CQ derive from K/K. However, deskew capability and maximum timing margin are reduced compared to dual-clock operation.
How does the ZQ pin affect output drive strength?
The ZQ pin connects to an external 240 Ω resistor to ground, enabling on-die calibration of HSTL output drivers to match 50 Ω differential trace impedance. This adjusts output slew rate and termination, minimizing reflections and ensuring clean eye diagrams at 666 MT/s-no external series resistors required.
Is CY7C1520KV18-333BZXI pin-compatible with CY7C1518KV18-333BZXI?
No-they share the same 165-ball FBGA footprint but differ in pin assignment: CY7C1520KV18 uses BWS[3:0] and DQ[35:0], while CY7C1518 uses BWS[1:0] and DQ[17:0]. Address count also differs (21 vs. 22 pins), making direct substitution impossible without PCB redesign and firmware adaptation.
CY7C1520KV18-333BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1520KV18-333BZXI FAQ
1.How can I place an order for CY7C1520KV18-333BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1520KV18-333BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1520KV18-333BZXI reliable?
The price and inventory of CY7C1520KV18-333BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1520KV18-333BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1520KV18-333BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1520KV18-333BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1520KV18-333BZXI?
CY7C1520KV18-333BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1520KV18-333BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1520KV18-333BZXI?
For technical support, including CY7C1520KV18-333BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1520KV18-333BZXI requirements.
6.How does Aetrix verify that CY7C1520KV18-333BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1520KV18-333BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1520KV18-333BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1520KV18-333BZXI?
All CY7C1520KV18-333BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1520KV18-333BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1520KV18-333BZXI part is unused and in its original packaging.
Return procedure for CY7C1520KV18-333BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1520KV18-333BZXI Tags

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STMicroelectronics
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Microchip Technology

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Microchip Technology

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Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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Microchip Technology

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Microchip Technology

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AT24C04C-SSHM-T
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Microchip Technology
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