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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Cypress Semiconductor Corp CY7C1520V18-200BZC

Name: CY7C1520V18-200BZC
Brand: Cypress Semiconductor Corp
SKU: CY7C1520V18-200BZC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY7C1520V18-200BZC

Manufacturer:: Cypress Semiconductor Corp

Category:: Memory

Package:: 165-LBGA

Datasheet:: CY7C1520V18-200BZC.pdf

Description:: IC SRAM 72MBIT PARALLEL 165FBGA

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Product details

Overview

CY7C1520V18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR-II SRAM configured as 2M × 36, operating at up to 300 MHz with double-data-rate transfers at 600 MHz effective rate, featuring dual input clocks (K/K), echo clocks (CQ/CQ), and 1.8V core supply - deployed in high-bandwidth packet buffering for telecom line cards.

For engineers reviewing the CY7C1520V18 datasheet, CY7C1520V18 pinout, CY7C1520V18 application, or CY7C1520V18 equivalent, key selection criteria include burst depth (2-word), HSTL I/O compatibility, DLL-assisted data placement, and FBGA-165 package thermal/mechanical constraints in multi-SRAM memory subsystems.

Technical Context

The CY7C1520V18 implements a synchronous pipelined architecture with internal 2-word burst counter driven by external A0, supporting 21-bit address space (1M × 36 per array × 2 banks). All synchronous inputs - including R/W, LD, and BWS[3:0] - are registered on rising edges of K and K clocks.

Read data is edge-aligned to C/C output clocks with echo clocks CQ/CQ referenced to those outputs; write data is sampled on both K and K edges. The integrated Delay Lock Loop (DLL) eliminates clock-to-data skew, and ZQ pin enables dynamic output impedance tuning to match 50 Ω system buses.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	72 Mbit (2M × 36 organization), enabling compact high-throughput buffer designs without external width expansion.
Max Clock Frequency	300 MHz (K/K), defining maximum sustained burst transaction rate of 600 million words/sec in DDR mode.
Data Rate	600 MHz effective (DDR), delivering 2.16 GB/s peak bandwidth with 36-bit bus width.
I/O Standard	HSTL Class I inputs/outputs with programmable drive strength and VREF-referenced switching thresholds.
Core Supply	1.8 V ± 0.1 V, requiring low-noise regulation and decoupling compatible with modern FPGA/ASIC power domains.
Package	165-ball FBGA (15 mm × 17 mm × 1.4 mm), supporting fine-pitch routing and thermal dissipation up to 1.08 W max at 300 MHz.
DLL Support	Integrated Delay Lock Loop ensures <±50 ps clock-to-Q skew across temperature/voltage, critical for deterministic timing closure.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm footprint, 1.4 mm height, RoHS-compliant with Pb-free option.

Pin/Terminal	Circuit Role	Design Meaning
DQ[35:0]	Synchronous bidirectional data bus	36-bit DDR data path; latched on K/K for writes, driven on C/C (or K/K) for reads; auto-tri-stated when deselected.
BWS[3:0]	Byte write select (active LOW)	Independent control of four 9-bit byte lanes; allows partial writes without read-modify-write overhead.
A[20:1], A0	Address inputs	A[20:1] selects 1M-word location; A0 feeds burst counter to sequence two 36-bit words from same base address.
K, K	Positive/negative input clocks	Rising edges capture all synchronous inputs (address, R/W, LD, BWS); define timing reference for internal pipeline stages.
C, C	Positive/negative output clocks	Edge-aligned with read data; used with CQ/CQ to deskew flight time mismatches across multiple SRAMs on shared bus.
CQ, CQ	Echo clocks (output)	Free-running copies of C/C, phase-matched to Q[35:0] outputs - simplify source-synchronous capture at controller side.
ZQ	Impedance calibration input	Connects to external 240 Ω resistor to GND to calibrate output driver impedance to 50 Ω ±10%, matching PCB trace Z₀.
DOFF	DLL disable control	Active-LOW signal; when asserted, disables DLL and reverts to fixed-latency mode with relaxed setup/hold margins.

Key Features

Feature	Design Value
2-word DDR burst architecture	Reduces address bus toggling by 50% versus single-word access, lowering EMI and simplifying controller address generation logic.
Programmable HSTL output drive	Variable drive strength supports signal integrity optimization across varying load capacitance (5–15 pF) and trace lengths.
On-die DLL with echo clocks	Enables zero-skew source-synchronous interface without external delay compensation, easing timing closure at 300 MHz.
JTAG 1149.1 test access port	Supports boundary-scan testing of interconnects and in-system programming of configuration registers during board validation.
Expanded VDDQ range (1.4–1.8 V)	Allows interoperability with mixed-voltage systems and margining for voltage droop under transient load conditions.

Applications

Telecom Packet Buffering

Network Processor Interface

Use Scenario: Line card buffers for OC-192/STM-64 traffic where 10+ Gbps ingress/egress requires low-latency, deterministic memory access.

IC Role / Device Role / Timing Role: High-bandwidth, burst-mode SRAM acting as first-level packet store between SERDES and network processor, synchronized via C/C and CQ/CQ.

Use Value: 2.16 GB/s bandwidth and sub-10 ns read latency enable full-line-rate buffering without flow-control stalls.

Use Scenario: Shared memory pool for multi-core network processors executing classification, forwarding, and statistics aggregation.

IC Role / Device Role / Timing Role: Synchronous DDR-II SRAM interfaced directly to NP's HSTL memory controller, using LD and BWS[3:0] for atomic updates.

Use Value: Byte-selectable writes eliminate RMW cycles, improving throughput for concurrent table updates across CPU cores.

High-Speed Test Equipment

Avionics Data Recorder

Use Scenario: Real-time waveform capture in digital storage oscilloscopes sampling at ≥5 GS/s with deep memory depth requirements.

IC Role / Device Role / Timing Role: Burst-access memory staging raw ADC samples before compression; clocked by K/K with DLL locked to system master clock.

Use Value: Deterministic 300 MHz operation and DLL-calibrated CQ/CQ ensure jitter-free sample alignment across 36-bit parallel paths.

Use Scenario: Fault-tolerant flight data recorder capturing ARINC 429/664 messages with guaranteed write persistence under vibration and thermal stress.

IC Role / Device Role / Timing Role: Radiation-tolerant (qualified) SRAM used for cyclic buffer storage, powered from isolated 1.8V rail with ZQ-calibrated outputs.

Use Value: 165-ball FBGA provides mechanical robustness; HSTL I/O withstands EMI in avionics bays without signal degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
AS7C3256B-20JIN	512K × 36, 3.3V core, async/single-data-rate, no DLL or echo clocks	Limited to ≤100 MHz operation; lacks DDR timing precision for >1 Gbps interfaces	Select only for cost-sensitive, lower-bandwidth legacy systems where timing margin is abundant.
IS61WV102436BLL-15BLI	1M × 36, 3.3V, sync pipelined but non-DDR, 15 ns access, no burst or DLL	No burst capability; higher latency per word; incompatible with DDR controller PHY layers	Use only when migrating from older SSRAM designs without DDR infrastructure changes.

Compared with AS7C3256B-20JIN and IS61WV102436BLL-15BLI, CY7C1520V18 delivers 2× bandwidth, deterministic DDR timing via DLL/CQ, and 1.8V power efficiency - essential for next-gen telecom and test equipment where timing predictability and density are critical.

Availability

CY7C1520V18 is available at Aetrix Electronics and suitable for telecom infrastructure, network processor subsystems, high-speed test instrumentation, and avionics data recorders requiring stable component supply across extended product lifecycles.

Supply support for CY7C1520V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.

CY7C1520V18 belongs to the DDR-II SyncBurst SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in systems where DDR timing precision, low latency, and HSTL interoperability are mandatory.

FAQ

What is the minimum supported clock frequency for CY7C1520V18?

The device operates down to DC - there is no minimum clock frequency requirement. Its synchronous design allows indefinite hold states between transactions, making it suitable for burst-on-demand applications like packet processing where activity is intermittent but latency-critical when active.

Can CY7C1520V18 operate without the DLL enabled?

Yes. Asserting DOFF LOW disables the DLL, reverting timing to fixed-latency mode with relaxed setup/hold windows. This mode trades deterministic skew cancellation for broader voltage/temperature margin, useful during system bring-up or in thermally unstable environments.

How does ZQ calibration affect signal integrity?

ZQ calibration adjusts output driver impedance to match the PCB's characteristic impedance (typically 50 Ω). When properly configured with a 240 Ω resistor to ground, it reduces reflections and improves eye diagram opening - especially critical at 600 Mbps per pin in DDR mode.

Is CY7C1520V18 pin-compatible with other devices in the CY7C15xxV18 family?

No. While sharing the same 165-ball FBGA footprint and core interface signals, pin assignments differ significantly - particularly for BWS, DQ grouping, and address mapping - due to distinct data widths (x8/x9/x18/x36). Board layout must be specific to CY7C1520V18.

CY7C1520V18-200BZC Specifications

Product attributes: Attribute value

Manufacturer:: Cypress Semiconductor Corp

Series:: -

Package/Case:: 165-LBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, DDR II

Memory Size:: 72Mbit

Memory Organization:: 2M x 36

Memory Interface:: Parallel

Clock Frequency:: 200 MHz

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-FBGA (15x17)

CY7C1520V18-200BZC FAQ

1.How can I place an order for CY7C1520V18-200BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1520V18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1520V18-200BZC reliable?

The price and inventory of CY7C1520V18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1520V18-200BZC is usually 5 days.

3.What payment methods are accepted for CY7C1520V18-200BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1520V18-200BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1520V18-200BZC?

CY7C1520V18-200BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1520V18-200BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1520V18-200BZC?

For technical support, including CY7C1520V18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1520V18-200BZC requirements.

6.How does Aetrix verify that CY7C1520V18-200BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1520V18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1520V18-200BZC meets industry standards.

7.What is the process for return or replacement of CY7C1520V18-200BZC?

All CY7C1520V18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1520V18-200BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1520V18-200BZC part is unused and in its original packaging.

Return procedure for CY7C1520V18-200BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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