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Cypress Semiconductor Corp CY7C1520V18-200BZCT

Part No.:
CY7C1520V18-200BZCT
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1520V18-200BZCT.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,234

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Product details

Overview

CY7C1520V18 from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined DDR-II SRAM with 1.8V core supply, 300 MHz clock support, and dual-edge DDR data transfer at 600 Mbps per pin. It implements 2-word burst architecture with echo clocks (CQ/CQ), DLL-based timing alignment, and HSTL I/O for high-speed networking and packet buffering applications.

For engineers reviewing the CY7C1520V18 datasheet, CY7C1520V18 pinout, CY7C1520V18 application, or CY7C1520V18 equivalent, key selection criteria include its 2M × 36 organization, 165-ball FBGA package, 21-bit address bus with A0-controlled burst counter, and support for independent byte write select (BWS[3:0]) in high-throughput memory subsystems.

Technical Context

This SRAM uses a synchronous pipelined architecture with DDR-II interface: addresses are latched on alternate rising edges of K/K, and read data is driven on rising edges of C/C (or K/K in single-clock mode). The internal burst counter accepts A0 to sequence two 36-bit words per access.

All synchronous inputs (R/W, LD, BWS[3:0], A[20:0], DQ[35:0]) register on K/K edges; all outputs (DQ[35:0], CQ, CQ) register on C/C edges. The DLL aligns output data to echo clocks with sub-cycle accuracy, while ZQ enables dynamic output impedance tuning to 0.2×RQ.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit (2M × 36); supports 1M × 36 dual-array layout with A0-driven burst sequencing
Max Clock Frequency 300 MHz K/K input clock; enables 600 Mbps DDR data rate per DQ pin
I/O Voltage 1.8 V core (VDD), 1.4–1.8 V programmable HSTL output swing (VDDQ)
Burst Mode Fixed 2-word burst; no burst length configuration - reduces external address bus toggling by 50%
Write Select Four active-low byte write selects (BWS[3:0]); each controls 9-bit byte (D[8:0] to D[35:27]) independently
Timing Control Integrated Delay Lock Loop (DLL); eliminates static timing margin loss between CQ and DQ edges
Package 165-ball FBGA (15 × 17 × 1.4 mm); RoHS-compliant with Pb-free option

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, JEDEC MO-245 compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data 36-bit DDR data bus; inputs sampled on K/K rising edges, outputs driven on C/C rising edges with echo-clock alignment
A[20:0] Synchronous address input 21-bit address bus; A0 feeds internal burst counter to generate second 36-bit word address automatically
BWS[3:0] Byte write enable Four independent active-low signals controlling 9-bit byte writes; enables partial-word updates without read-modify-write
K / K Positive/negative input clocks Differential pair for all synchronous inputs; defines timing reference for address, control, and write data capture
C / C Positive/negative output clocks Differential pair for read data output timing; used with CQ/CQ to deskew flight time across multi-device memory channels
CQ / CQ Echo clocks Free-running output clocks synchronized to C/C; simplify system-level data capture by eliminating board trace skew compensation
ZQ Impedance calibration input Connects to external resistor to ground; tunes DQ/CQ output driver impedance to 0.2×RQ for signal integrity on 50 Ω buses
DOFF DLL disable control Active-low pin; disables internal DLL to reduce power and jitter when precise echo-clock alignment is not required

Key Features

Feature Design Value
DDR-II burst architecture Reduces effective address bus frequency by 2× versus single-data-rate SRAMs of same density
Programmable HSTL output drive VDDQ-referenced 1.4–1.8 V swing with ZQ-calibrated impedance ensures consistent signal integrity across voltage/temperature
Integrated DLL with echo clocks Eliminates need for external phase-matching circuitry; guarantees < ±50 ps CQ-to-DQ skew over process/voltage/temperature
Four-byte write select (BWS[3:0]) Enables atomic 9-bit updates within 36-bit word - critical for packet header modification in telecom line cards
JTAG 1149.1 test port Supports boundary-scan testing of interconnects in dense FBGA layouts without requiring physical probe access

Applications

Telecom Line Card Buffering High-Speed Packet Switching

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in carrier-grade routers with >10 Gbps line rates.

IC Role / Device Role / Timing Role: Dual-port buffer staging incoming/outgoing packet payloads; 2-word burst matches typical 64-byte cache line transfers.

Use Value: 36-bit width aligns with 4-byte-aligned headers + 32-byte payload segments; BWS[3:0] allows selective overwrite of TTL or checksum fields without full-word rewrite.

Use Scenario: Deep packet inspection engines requiring low-latency, deterministic access to flow state tables and signature buffers.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory for ASIC/FPGA co-processors; DDR-II interface sustains 600 MB/s sustained bandwidth per device.

Use Value: DLL-aligned CQ/DQ timing enables reliable sampling at 300 MHz controller clock; eliminates setup/hold violations in multi-SRAM channel designs.

Network Processor Offload Memory Test Equipment Pattern Memory

Use Scenario: Offloading classification, policing, and shaping functions from main CPU in embedded network processors.

IC Role / Device Role / Timing Role: Dedicated SRAM for rule tables and counters; synchronous pipelined access avoids pipeline stalls during table lookups.

Use Value: 1.8 V core and HSTL I/O minimize switching noise in mixed-signal SoC environments; DOFF pin allows DLL bypass during low-power idle modes.

Use Scenario: Vector memory in automated test equipment (ATE) generating high-fidelity stimulus patterns for ASIC validation.

IC Role / Device Role / Timing Role: Deterministic latency memory for pattern sequencers; echo clocks (CQ/CQ) synchronize capture logic across multiple parallel channels.

Use Value: 165-ball FBGA enables dense placement on ATE load boards; ZQ calibration maintains signal fidelity across wide temperature ranges (−40°C to +85°C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1518V18 4M × 18 organization (72 Mbit), same DDR-II architecture, 22-bit address bus, BWS[1:0] Wider data path (18-bit) but lower depth; suited for 16/32-bit bus systems with tighter address space constraints Select when system requires 18-bit native word width and higher array depth than 2M × 36 permits
IS45S32800J-3BLI 72-Mbit DDR SDRAM (not SRAM); 32-bit × 2M, 2.5 V I/O, no DLL or echo clocks, asynchronous refresh required Lower cost, higher density scalability, but introduces refresh overhead and non-deterministic latency Select only if deterministic access timing is not required and system can accommodate refresh management overhead

Compared with CY7C1518V18, CY7C1520V18 trades address width for wider data path-enabling fewer cycles per 64-byte transfer-while IS45S32800J-3BLI replaces SRAM determinism with DRAM density and cost advantages at the expense of guaranteed latency.

Availability

CY7C1520V18 is available at Aetrix Electronics and suitable for telecom infrastructure, high-speed test equipment, and network processor offload applications requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1520V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C1520V18 belongs to the DDR-II SyncBurst SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in packet-processing and instrumentation systems where SRAM reliability and timing precision outweigh DRAM density advantages.

FAQ

What is the minimum supported clock frequency for CY7C1520V18?

The device operates down to DC for functional operation, but AC timing specifications (e.g., tKHK, tDS, tDH) are guaranteed only from 167 MHz up to 300 MHz per the Selection Guide. Below 167 MHz, setup/hold margins must be verified per application conditions using the full AC timing table in Rev. *E datasheet.

Can CY7C1520V18 operate in single-clock mode without C/C inputs?

Yes. When C and C are tied to K and K respectively, the device enters single-clock mode. In this mode, read data and echo clocks (CQ/CQ) are referenced to K/K, and timing parameters shift to tKHCK and tKQX values specified in the datasheet's single-clock timing section.

How does ZQ calibration affect signal integrity on the DQ bus?

ZQ connects to an external resistor (typically 100 Ω to ground) to set output driver impedance to 0.2×RQ = 20 Ω. This matches standard 50 Ω transmission lines when used with series termination, reducing reflections and improving eye diagram opening at 600 Mbps DDR rates.

Is the DOFF pin required to be actively driven in normal operation?

No. DOFF is internally pulled up; it may be left unconnected or tied HIGH for normal DLL-enabled operation. Only drive it LOW when DLL must be disabled-for example, to reduce power in standby or when echo-clock alignment is unnecessary for system timing budget.

CY7C1520V18-200BZCT Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1520V18-200BZCT FAQ

1.How can I place an order for CY7C1520V18-200BZCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1520V18-200BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1520V18-200BZCT reliable?

The price and inventory of CY7C1520V18-200BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1520V18-200BZCT is usually 5 days.

3.What payment methods are accepted for CY7C1520V18-200BZCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1520V18-200BZCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1520V18-200BZCT?

CY7C1520V18-200BZCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1520V18-200BZCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1520V18-200BZCT?

For technical support, including CY7C1520V18-200BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1520V18-200BZCT requirements.

6.How does Aetrix verify that CY7C1520V18-200BZCT is sourced from the original manufacturer or authorized distributors?

All CY7C1520V18-200BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1520V18-200BZCT meets industry standards.

7.What is the process for return or replacement of CY7C1520V18-200BZCT?

All CY7C1520V18-200BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1520V18-200BZCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1520V18-200BZCT part is unused and in its original packaging.

Return procedure for CY7C1520V18-200BZCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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