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Cypress Semiconductor Corp CY7C1520V18-250BZC

Part No.:
CY7C1520V18-250BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1520V18-250BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:107

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Product details

Overview

CY7C1520V18 from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined DDR-II SRAM with 1.8V core supply, 300 MHz clock operation, and double-data-rate interface delivering 600 MT/s effective throughput. It implements 2-word burst architecture with echo clocks (CQ/CQ), DLL-based data alignment, and HSTL I/O for high-speed memory subsystems in network packet buffers and baseband signal processors.

For engineers reviewing the CY7C1520V18 datasheet, CY7C1520V18 pinout, CY7C1520V18 application, or CY7C1520V18 equivalent, key selection criteria include its 2M × 36 organization, 165-ball FBGA package, dual-clock timing (K/K and C/C), burst-controlled address sequencing via A0, and support for byte-level write masking via BWS[3:0].

Technical Context

This SRAM uses synchronous pipelined access with internal self-timed writes and DDR-II architecture: addresses are latched on alternating rising edges of K/K, while read data is driven on rising edges of C/C (or K/K in single-clock mode). The burst counter accepts A0 to sequence two 36-bit words per access.

All synchronous inputs (R/W, LD, BWS[3:0], A[20:0]) register on K/K edges; all outputs (DQ[35:0], CQ, CQ) register on C/C edges. Echo clocks CQ/CQ are free-running and phase-aligned to C/C, enabling precise source-synchronous capture without board-level skew compensation.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit (2M × 36), enabling 72-bit-wide data paths with minimal chip count in high-throughput buffering
Max Clock Frequency 250 MHz (K/K), supporting sustained 500 MT/s read/write bandwidth in burst mode
Data Rate 600 MT/s effective (DDR), achieved by transferring data on both rising edges of C/C clocks
I/O Interface HSTL Class I inputs/outputs with programmable drive strength and 1.4V–1.8V VDDQ range for impedance-matched signaling
Timing Control Integrated Delay Lock Loop (DLL) aligns CQ/CQ to C/C with < ±50 ps jitter, eliminating external deskew circuitry
Write Granularity Four independent byte write enables (BWS[3:0]), allowing selective 8-bit updates within each 36-bit word without read-modify-write
Package 165-ball FBGA (15 × 17 × 1.4 mm), compatible with automated SMT assembly and thermal management in dense PCB layouts

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant with Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; inputs sampled on K/K rising edges, outputs driven on C/C rising edges with echo-clock alignment
BWS[3:0] Byte write select (active low) Independent control over four 8-bit segments-BWS0→D[8:0], BWS1→D[17:9], BWS2→D[26:18], BWS3→D[35:27]
A[20:0] Address input (multiplexed) 21-bit external address; A0 feeds internal burst counter to generate sequential 36-bit word addresses
K / K Positive/negative input clocks Rising edges latch all synchronous inputs (address, R/W, LD, BWS); define system timing reference for command initiation
C / C Positive/negative output clocks Rising edges gate read data output; used with CQ/CQ for flight-time deskewing across multi-device memory channels
CQ / CQ Echo clocks (output) Free-running, DLL-aligned copies of C/C-enable source-synchronous capture at controller with zero setup/hold margin overhead
ZQ Output impedance calibration Connects to external 240Ω resistor to ground to tune DQ/CQ driver impedance to 0.2 × RQ = 48Ω for HSTL-1 compliance
DOFF DLL disable (active low) Pulling low disables DLL; shifts output timing to fixed delay mode-used only for debug or legacy timing compatibility

Key Features

Feature Design Value
2-Word Burst Architecture Reduces address bus toggling by 50%-only one address per two 36-bit words, lowering EMI and routing congestion in high-speed designs
Source-Synchronous Echo Clocks (CQ/CQ) Eliminates need for trace-length matching between data and clock nets-each SRAM provides its own calibrated timing reference
Programmable HSTL Output Drive Adjusts slew rate and current strength per DQ pin to match PCB stackup and reduce simultaneous switching noise (SSN)
JTAG 1149.1 Test Access Port Enables boundary-scan testing of interconnects and in-system programming of configuration registers during production test
On-Chip DLL with Sub-100ps Jitter Ensures deterministic data-eye placement at 600 MT/s-no external PLL or delay-line components required for timing closure

Applications

Network Packet Buffering Baseband Signal Processing

Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches before forwarding decisions.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to MAC controllers via DDR-250 MHz bus.

Use Value: 2M × 36 organization supports 72-bit parallel frame storage; echo clocks enable reliable capture at 600 MT/s without FPGA I/O timing closure penalties.

Use Scenario: Temporary storage of OFDM symbol samples in LTE eNodeB digital front-end processing chains.

IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as ping-pong buffer between FFT engines and channel estimation blocks.

Use Value: Byte-selectable writes (BWS[3:0]) allow partial symbol updates without full-word overwrite; DLL ensures consistent data-eye position across temperature.

Telecom Line Card Memory High-Speed Test Equipment

Use Scenario: Holding protocol translation tables and session state in carrier-grade VoIP media gateways.

IC Role / Device Role / Timing Role: Low-power, high-reliability memory mapped into ARM Cortex-A9 AXI bus with burst coalescing.

Use Value: 1.8V core + HSTL I/O reduces dynamic power vs. 3.3V QDR; 165-ball FBGA allows compact layout on space-constrained line cards.

Use Scenario: Capturing real-time waveform data from multi-GHz ADCs in automated test systems.

IC Role / Device Role / Timing Role: Deep buffer staging memory synchronized to sampling clock via K/K and output-clocked to digitizer logic via C/C.

Use Value: 250 MHz clock rating supports >500 MS/s sustained write rates; ZQ calibration maintains signal integrity across varying load conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256A-25JC 256K × 36, 3.3V CMOS, asynchronous interface, no DLL or echo clocks Limited to ≤100 MHz operation; requires external timing control and trace-matching Select when cost sensitivity outweighs speed requirements and system-level timing budget permits added complexity
IS61WV102436BLL-25BLI 1M × 36, 3.3V/2.5V, synchronous pipeline but single-data-rate (SDR), no burst or echo clocks Half the density and bandwidth; lacks DDR timing features needed for 600 MT/s capture Choose only for legacy upgrades where DDR infrastructure is absent and bandwidth demand is ≤250 MT/s

Compared with AS7C3256A-25JC and IS61WV102436BLL-25BLI, CY7C1520V18 delivers 2× density, 2.4× bandwidth, and integrated timing infrastructure-reducing FPGA logic overhead and PCB routing effort in new high-speed designs.

Availability

CY7C1520V18 is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, telecom line card memory, and high-speed test equipment requiring stable component supply and long-term industrial availability.

Supply support for CY7C1520V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1520V18 belongs to Cypress's DDR-II SRAM product line, engineered specifically for low-latency, high-throughput buffering in networking and wireless infrastructure where deterministic timing and signal integrity are critical.

FAQ

What is the minimum supported clock frequency for CY7C1520V18?

The device operates down to DC for static functionality, but AC timing specifications-including setup/hold margins and DLL lock range-are guaranteed only at ≥100 MHz. For reliable DLL operation and echo clock alignment, use ≥150 MHz in production systems. Below this, DOFF must be asserted to bypass DLL-dependent timing paths.

Can CY7C1520V18 operate in single-clock mode without C and C inputs?

Yes-when C and C are tied to K and K respectively, the device enters single-clock mode. In this configuration, read data is driven on K/K rising edges, and CQ/CQ are generated relative to K/K. All timing parameters shift to single-edge referenced values per the datasheet's "Single Clock Mode" table.

How does ZQ calibration affect signal integrity on DQ and CQ pins?

ZQ calibration adjusts the output driver impedance of DQ[35:0] and CQ/CQ to match the system's characteristic impedance (typically 50Ω). With a 240Ω resistor to ground, drivers settle to 48Ω ±10%, reducing reflections and improving eye height at 600 MT/s-critical for maintaining >0.3 UI eye opening in FR4 PCBs.

Is CY7C1520V18 pin-compatible with other devices in the CY7C15xxV18 family?

No-while all share the same 165-ball FBGA footprint, pin functions differ significantly across densities. For example, CY7C1516V18 uses NWS[1:0], whereas CY7C1520V18 uses BWS[3:0]; A0 serves as burst counter input only in CY7C1518V18/CY7C1520V18. Direct replacement requires full schematic and layout revision.

CY7C1520V18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1520V18-250BZC FAQ

1.How can I place an order for CY7C1520V18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1520V18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1520V18-250BZC reliable?

The price and inventory of CY7C1520V18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1520V18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1520V18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1520V18-250BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1520V18-250BZC?

CY7C1520V18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1520V18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1520V18-250BZC?

For technical support, including CY7C1520V18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1520V18-250BZC requirements.

6.How does Aetrix verify that CY7C1520V18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1520V18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1520V18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1520V18-250BZC?

All CY7C1520V18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1520V18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1520V18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1520V18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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