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Cypress Semiconductor Corp CY7C1523AV18-200BZC

Part No.:
CY7C1523AV18-200BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1523AV18-200BZC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
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Payment
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Inventory:3,243

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Product details

Overview

CY7C1523AV18 from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous pipelined SRAM with DDR-II Separate I/O architecture, operating at 200 MHz clock frequency (400 MT/s effective data rate), supporting 2-word burst reads/writes, and featuring dual input clocks (K/K) and dual output clocks (C/C) for precise timing control in high-speed memory subsystems. It is used in network packet buffering, baseband processing, and FPGA co-processor cache layers requiring low-latency, high-bandwidth parallel memory access.

For engineers reviewing the CY7C1523AV18 datasheet, CY7C1523AV18 pinout, CY7C1523AV18 application, or CY7C1523AV18 equivalent, key selection criteria include DDR-II SIO interface compatibility, 1.8V core/VDDQ operation, HSTL I/O compliance, DLL-enabled 1.5-cycle read latency, and 165-ball FBGA (15 × 17 mm) mechanical fit in space-constrained telecom and test equipment designs.

Technical Context

This SRAM implements a true separate I/O DDR architecture: independent read and write ports eliminate bus turnaround delay, and address latching occurs on alternating rising edges of K/K to support 2-word burst addressing. Internal pipelining enables continuous burst throughput without inter-burst gaps.

Synchronous operation relies on four critical clock domains: K/K for address/control/data input registration, C/C for output data registration, CQ/CQ echo clocks synchronized to C/C for receiver-side deskewing, and optional DLL activation via DOFF pin to align internal timing paths for 300 MHz–capable operation (DLL enabled) or fallback to DDR-I timing at ≤167 MHz (DLL disabled).

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit / 4M × 18 - supports two 18-bit words per address location in burst mode, enabling efficient 36-bit-wide data transfers per cycle.
Max Clock Frequency 200 MHz - defines maximum K/K input clock rate; enables 400 MT/s effective data throughput with DDR interface.
Read Latency 1.5 cycles (DLL enabled) or 1 cycle (DLL disabled) - determines minimum clock delay between address load and valid Q[17:0] output, directly impacting memory controller pipeline depth.
I/O Voltage 1.8 V core (VDD), 1.8 V I/O (VDDQ), HSTL-compliant inputs/outputs - ensures interoperability with 1.8 V FPGA I/O banks and ASIC memory controllers.
Package 165-ball FBGA (15 × 17 × 1.4 mm) - provides fine-pitch, thermally efficient mounting compatible with automated PCB assembly and high-density routing.
Timing Interface DDR-II Separate I/O with echo clocks (CQ/CQ) - eliminates board-level skew compensation logic by delivering phase-aligned data capture clocks to the memory controller.
Write Control Byte Write Select (BWS[1:0]) - allows selective 9-bit byte updates within each 18-bit word, preserving unmodified data without full-word rewrite overhead.

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm footprint, 1.4 mm height, RoHS-compliant, with 0.8 mm ball pitch and standard JEDEC MO-245AC mechanical outline.

Pin/Terminal Circuit Role Design Meaning
A[20:0] Address Input 21-bit multiplexed address bus latched on rising edge of K; selects one of 4M locations for 2-word burst access.
D[17:0] Data Input 18-bit synchronous write data path registered on rising edges of both K and K clocks.
Q[17:0] Data Output 18-bit synchronous read data driven on rising edges of C/C (or K/K in single-clock mode); tri-stated when read port inactive.
BWS[1:0] Byte Write Select Active-low signals controlling which 9-bit byte (D[8:0] or D[17:9]) is written during burst; enables partial-word updates.
K, K Input Clock Pair Differential clock inputs for address, control, and write data registration; rising edges define all synchronous setup/hold timing references.
C, C Output Clock Pair Differential clocks driving Q[17:0] outputs; used with CQ/CQ to deskew flight time across multiple SRAMs in parallel configurations.
CQ, CQ Echo Clock Outputs Free-running, phase-aligned copies of C/C; delivered to controller to synchronize data capture without trace-length matching.
DOFF DLL Enable Control Active-low pin disabling internal Delay Lock Loop; forces DDR-I timing mode (1-cycle latency) for backward compatibility or lower-frequency operation.
ZQ Impedance Calibration Reference pin for output driver impedance tuning; connected to external 240 Ω resistor to ground to calibrate Q[17:0]/CQ/CQ to ±10% of 50 Ω.
VDD, VDDQ, VSS Power/Ground VDD = 1.8 V core supply; VDDQ = 1.8 V I/O supply; VSS = common ground; decoupling required per datasheet layout guidelines.

Key Features

Feature Design Value
DDR-II Separate I/O Architecture Eliminates bidirectional bus turnaround delay by dedicating D[17:0] for writes and Q[17:0] for reads-enabling back-to-back burst operations without dead cycles.
2-Word Burst Mode Reduces address bus switching frequency by 50% versus single-word access; cuts address trace count and routing congestion in high-pin-count systems.
DLL-Enabled Timing Precision Internal Delay Lock Loop aligns internal data paths to achieve 1.5-cycle read latency at 200 MHz, reducing controller timing margin requirements.
HSTL I/O with Variable Drive Strength Programmable output drive (via ZQ calibration) ensures signal integrity across varied PCB trace lengths and loads without external termination resistors.
JTAG 1149.1 Test Access Port Enables boundary-scan testing of SRAM interconnects and system-level debug without requiring dedicated test pads or probe points.

Applications

Network Packet Buffering FPGA Co-Processor Cache

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before classification, forwarding, or policing.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer interfacing directly to MAC-layer logic via DDR-II SIO.

Use Value: 400 MT/s bandwidth sustains full-duplex 10Gbps line rates; 2-word burst reduces address bus utilization by half versus discrete SRAMs.

Use Scenario: Providing scratchpad memory for Xilinx Virtex or Intel Stratix FPGA-based digital signal processors executing real-time FFT or filtering algorithms.

IC Role / Device Role / Timing Role: Off-chip L1 cache extension with deterministic 1.5-cycle read latency synchronized to FPGA fabric clock domain.

Use Value: HSTL I/O matches FPGA bank voltage and timing specs; echo clocks (CQ/CQ) simplify timing closure in multi-SRAM parallel configurations.

Baseband Signal Processing Automated Test Equipment (ATE)

Use Scenario: Temporary storage of IQ samples in LTE/5G radio units during channel estimation and precoding computation.

IC Role / Device Role / Timing Role: Burst-access memory buffer aligned to symbol timing, interfaced to DSP cores via synchronous 18-bit data paths.

Use Value: Byte write select (BWS[1:0]) enables partial update of complex sample buffers without corrupting adjacent symbols.

Use Scenario: Pattern memory in high-speed digital ATE systems generating and capturing multi-gigabit test vectors for SoC validation.

IC Role / Device Role / Timing Role: Deterministic-latency memory subsystem feeding stimulus generators and capturing response data with sub-nanosecond skew control.

Use Value: CQ/CQ echo clocks eliminate need for manual trace-length matching across 16+ parallel SRAM channels-reducing PCB layer count and design iteration time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV102418B 1024K × 18, 165-ball FBGA, 166 MHz max, no DLL, single-ended clocks only Lacks echo clocks and DDR-II SIO; requires external bus turnaround logic and tighter trace matching Select when cost sensitivity outweighs timing margin requirements and system clock < 167 MHz.
Renesas R1EX24012AS 4M × 18, 165-ball FBGA, 250 MHz max, DDR-II SIO, integrated DLL, but no BWS support Supports higher clock rate but lacks byte-select capability-requires full-word writes for partial updates Select when maximum bandwidth is critical and write granularity can be relaxed to 18-bit boundaries.

Compared with IS61WV102418B and R1EX24012AS, CY7C1523AV18 uniquely combines DLL-enabled 1.5-cycle latency, echo-clock–assisted deskewing, and dual-byte write select-making it optimal for systems demanding both timing precision and flexible partial-word update capability at 200 MHz.

Availability

CY7C1523AV18 is available at Aetrix Electronics and suitable for network infrastructure, FPGA acceleration, baseband processing, and automated test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1523AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1523AV18 belongs to Cypress's DDR-II SIO SRAM product line, designed specifically for high-bandwidth, low-latency memory subsystems in networking, test, and signal processing equipment where deterministic timing and scalable parallel interfaces are essential.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in DDR-I mode with 1-cycle read latency and reduced maximum frequency (≤167 MHz). When HIGH, DLL is enabled, supporting 1.5-cycle latency and full 200 MHz operation. This pin allows runtime mode switching without changing clock frequencies or controller firmware.

Can CY7C1523AV18 operate with only K and K clocks, without C and C?

Yes. In single-clock mode, the device uses K and K for both input registration and output data timing-driving Q[17:0] on rising edges of K/K instead of C/C. However, echo clocks (CQ/CQ) remain functional and phase-aligned to K/K, preserving deskew capability. This mode simplifies clock distribution but forfeits independent read/write clock domain separation.

How many address lines are required, and what is their multiplexing behavior?

CY7C1523AV18 requires 21 address lines (A[20:0]) to access its 4M-word array. Addresses are multiplexed across read and write operations and latched on alternating rising edges of K/K-first edge captures the base address, second edge captures the burst offset. No external address multiplexer is needed; internal logic handles 2-word burst sequencing automatically.

What is the purpose of the ZQ pin, and how must it be connected?

ZQ is an impedance calibration reference pin. It must be connected to a 240 Ω resistor tied to ground to calibrate output driver strength for Q[17:0], CQ, and CQ to match 50 Ω transmission lines. Alternatively, tying ZQ to VDDQ enables minimum impedance mode (≈30 Ω). Leaving ZQ floating or connecting it to VSS violates specification and causes undefined output drive behavior.

CY7C1523AV18-200BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1523AV18-200BZC FAQ

1.How can I place an order for CY7C1523AV18-200BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1523AV18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1523AV18-200BZC reliable?

The price and inventory of CY7C1523AV18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1523AV18-200BZC is usually 5 days.

3.What payment methods are accepted for CY7C1523AV18-200BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1523AV18-200BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1523AV18-200BZC?

CY7C1523AV18-200BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1523AV18-200BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1523AV18-200BZC?

For technical support, including CY7C1523AV18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1523AV18-200BZC requirements.

6.How does Aetrix verify that CY7C1523AV18-200BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1523AV18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1523AV18-200BZC meets industry standards.

7.What is the process for return or replacement of CY7C1523AV18-200BZC?

All CY7C1523AV18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1523AV18-200BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1523AV18-200BZC part is unused and in its original packaging.

Return procedure for CY7C1523AV18-200BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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