Cypress Semiconductor Corp CY7C1523JV18-300BZXC

Overview

CY7C1523JV18-300BZXC from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous pipelined DDR-II SIO SRAM with 300 MHz clock operation, 1.8V core supply, HSTL I/O, and 1.5-cycle read latency when DLL is enabled. It implements separate read/write ports with echo clocks (CQ/CQ) for precise data capture in high-speed memory subsystems used in network packet buffers and FPGA co-processor caches.

For engineers reviewing the CY7C1523JV18-300BZXC datasheet, CY7C1523JV18-300BZXC pinout, CY7C1523JV18-300BZXC application, or CY7C1523JV18-300BZXC equivalent, key selection criteria include DDR-II SIO burst timing, dual-clock domain support (K/K and C/C), DLL-enabled latency mode, HSTL output drive adjustability, and 165-ball FBGA mechanical compatibility.

Technical Context

The device uses a synchronous pipelined architecture with two independent DDR-II SIO ports: a write port accepting D[17:0] on rising edges of K and K, and a read port driving Q[17:0] synchronized to C and C (or K/K in single-clock mode). Address A[20:0] is latched on K's rising edge for both read and write operations across its 2M × 36 internal dual-array structure.

It integrates a Delay Lock Loop (DLL) enabling 1.5-cycle read latency at 300 MHz; when DOFF is asserted low, it reverts to DDR-I timing with 1-cycle latency up to 167 MHz. Echo clocks CQ/CQ are free-running and phase-aligned to C/C, eliminating per-device skew compensation in multi-SRAM systems.

Key Specifications

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXC suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with CY7C1523JV18-300BZXC, the ISSI part offers simpler timing but lacks DDR-II throughput and echo-clock synchronization; the Micron part delivers higher density scalability but introduces refresh complexity and variable latency-making the Cypress device optimal for deterministic, low-jitter burst memory access.

Availability

CY7C1523JV18-300BZXC is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and baseband processing applications requiring stable component supply, long-lifecycle support, and guaranteed FBGA package consistency.

Supply support for CY7C1523JV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

CY7C1523JV18 belongs to the DDR-II SIO SRAM product line, engineered specifically for deterministic-latency, high-throughput memory interfacing in FPGA- and ASIC-based systems where DDR2/DDR3 SDRAM timing variability is unacceptable.

FAQ

What is the function of the DOFF pin on CY7C1523JV18-300BZXC?

The DOFF pin is an active-low DLL disable control. When pulled low, it disables the internal Delay Lock Loop, forcing the device into DDR-I timing mode with 1-cycle read latency and reduced maximum operating frequency (167 MHz). In normal operation, DOFF must be tied high via ≤10 kΩ pull-up to enable 1.5-cycle latency at 300 MHz.

Can CY7C1523JV18-300BZXC operate with only a single clock source?

Yes. When only K and K are supplied and C/C are left unconnected, the device defaults to single-clock mode: read data is driven on rising edges of K and K, and echo clocks CQ/CQ are generated relative to K. This simplifies board design but forfeits flight-time deskew benefits provided by dedicated C/C.

How does ZQ calibration affect signal integrity in high-speed layouts?

ZQ calibration adjusts the output driver impedance of Q[17:0], CQ, and CQ to 0.2 × RQ, where RQ is an external resistor (typically 50 Ω) from ZQ to ground. This matches the SRAM's output impedance to the PCB trace characteristic impedance-minimizing reflections, improving eye height, and enabling reliable 600 MT/s operation without termination resistors on every net.

Is the 165-ball FBGA footprint compatible with other Cypress DDR-II SIO SRAMs?

Yes. CY7C1522JV18, CY7C1529JV18, CY7C1523JV18, and CY7C1524JV18 share identical 165-ball FBGA mechanical dimensions and ball map. This allows pin-compatible migration across densities (8M×8 to 2M×36) without PCB redesign-only firmware and address mapping require update.