Cypress Semiconductor Corp CY7C1525JV18-250BZXC

Overview

CY7C1525JV18-250BZXC from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 8M × 9 organization, 1.8V core supply, and dual DDR read/write ports operating at 250 MHz (20 ns cycle time). It delivers 534 MT/s data transfer rate per port using separate K/K and C/C clock pairs, supports 1.5-cycle read latency with DLL enabled, and is packaged in a 165-ball FBGA (15 × 17 × 1.4 mm) for high-speed networking buffer applications.

For engineers reviewing the CY7C1525JV18-250BZXC datasheet, CY7C1525JV18-250BZXC pinout, CY7C1525JV18-250BZXC application, or CY7C1525JV18-250BZXC equivalent, key selection criteria include burst depth (2-word), HSTL I/O compatibility, echo clock (CQ/CQ) support for timing deskew, VDDQ range (1.4–1.8 V), and DOFF-controlled DLL on/off mode switching between QDR II and QDR I timing behavior.

Technical Context

The CY7C1525JV18-250BZXC implements a synchronous pipelined architecture with physically independent read and write data paths, eliminating bus turnaround overhead. Its 2-word burst transfers occur on every rising edge of K/K (write) and C/C (read), enabling concurrent full-bandwidth access without arbitration delay.

It uses a Delay Lock Loop (DLL) to align internal timing for precise 1.5-cycle read latency when DOFF = HIGH; disabling the DLL via DOFF = LOW reverts operation to QDR I mode with 1-cycle latency and reduced max frequency (≤167 MHz). Address inputs are multiplexed across both ports and latched on alternating K-clock edges.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with AS7C361024B-250BIN and IS61WV102418BLL-250TQLI, the CY7C1525JV18-250BZXC uniquely delivers 72-Mbit dual-port DDR bandwidth with integrated echo clocks and ZQ calibration-enabling simpler, higher-reliability timing closure in 10G+ switch fabric designs without external deskew components.

Availability

CY7C1525JV18-250BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom line card buffering, and baseband processing memory requiring stable component supply across extended production lifecycles.

Supply support for CY7C1525JV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

The QDR II SRAM product line-including CY7C1525JV18-was engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in multi-gigabit networking infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1525JV18-250BZXC?

The DOFF (DLL Turn-Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and maximum frequency limited to 167 MHz. When held HIGH (typically via 10 kΩ pull-up), DLL is enabled, supporting 250 MHz operation with 1.5-cycle latency and tighter timing margins.

How does the CQ/CQ echo clock improve system timing margin?

CQ and CQ are free-running, phase-aligned copies of the C and C output clocks, respectively. They allow the memory controller to sample Q[8:0] using CQ/CQ instead of C/C, effectively canceling out PCB trace skew between clock and data lines. This eliminates the need for length-matched routing and improves setup/hold timing margin at 534 MT/s.

Can CY7C1525JV18-250BZXC operate with VDDQ = 1.5V while VDD = 1.8V?

Yes. The device specifies VDDQ = 1.4 V to VDD (1.8 V), so 1.5 V is within the valid operating range. This configuration is commonly used to interface with 1.5 V HSTL-compatible controllers while maintaining full 250 MHz performance and signal integrity-provided VREF is set to 0.75 V (½ × VDDQ).

Is the ZQ pin required for functional operation?

Yes. ZQ must be connected either to an external resistor to ground (for impedance tuning) or directly to VDDQ (for minimum output drive strength). Leaving ZQ floating or connecting it to GND violates the absolute maximum ratings and may cause output driver malfunction or excessive current draw. Proper ZQ termination is essential for HSTL compliance and signal integrity.