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Cypress Semiconductor Corp CY7C1525KV18-250BZXC

Part No.:
CY7C1525KV18-250BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1525KV18-250BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:506

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Product details

Overview

CY7C1525KV18-250BZXC from Cypress Semiconductor is an 8M × 9 (72-Mbit) QDR® II SRAM with synchronous pipelined architecture, dual independent read/write ports, 250 MHz K-clock operation (500 MT/s effective), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1525KV18-250BZXC datasheet, CY7C1525KV18-250BZXC pinout, CY7C1525KV18-250BZXC application, or CY7C1525KV18-250BZXC equivalent, key selection criteria include burst depth (2-word), DDR timing compliance, echo clock (CQ) support for source-synchronous capture, and HSTL-18-compatible output drive.

Technical Context

This QDR II SRAM implements separate read and write data paths with fully independent address latching on alternating edges of the K clock, enabling true concurrent transactions without bus turnaround. Its internal PLL aligns CQ echo clocks to output data edges for reliable capture at 700 Mbps per port.

The device supports programmable DOFF mode for configurable read latency (1-cycle when LOW, 1.5-cycle when HIGH) and uses synchronous self-timed writes with byte-level write enables (BWS0). All I/Os comply with HSTL Class I specifications under 1.4–1.8 V VDDQ.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (8M × 9 organization)
Max Clock Frequency (K) 250 MHz - determines maximum sustained throughput of 4.5 Gbps (9-bit × 2 words × 250 MHz)
Data Rate (DDR) 500 MT/s per port - enables 700 Mbps effective data transfer on each port using rising-edge sampling
Core Supply (VDD) 1.8 V ± 0.1 V - defines logic threshold and power consumption baseline; requires tight regulation
I/O Supply (VDDQ) 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V system interfaces; sets HSTL output swing
Read Latency 1 or 1.5 cycles - selectable via DOFF pin; impacts pipeline depth and minimum read-to-read interval
Package 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - provides 0.8 mm ball pitch, thermal performance suitable for high-speed memory subsystems

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXC suffix).

Pin/Terminal Circuit Role Design Meaning
D[8:0] Synchronous write data input 9-bit parallel data sampled on rising edge of K clock; latched into write register for burst write
Q[8:0] Synchronous read data output 9-bit parallel data driven on rising edge of C clock; synchronized to CQ echo clock for source-clocked capture
K / K Primary input clock pair Rising edges control all synchronous inputs (address, data, controls); K used for read address, K for write address
C / C Output clock pair Rising edges clock read data outputs (Q[8:0]); used for timing alignment with CQ echo signals
CQ / CQ Echo clock outputs Source-synchronous copies of C/C clocks; enable precise data capture in FPGA/ASIC receivers without skew compensation
BWS0 Byte write select Active-low signal controlling write enable for D[8:0]; when deasserted, entire 9-bit word is written
WPS Write port select Active-low enable for write operations; must be asserted with valid address and data to initiate write cycle
DOFF Read latency mode control HIGH selects 1.5-cycle latency (QDR II mode); LOW selects 1-cycle latency (QDR I compatibility mode)
VDDQ I/O power supply Supplies HSTL-compatible output buffers; must be decoupled independently from VDD
VDD Core power supply 1.8 V supply for internal logic and memory array; requires low-noise regulation and local bypassing
VREF Reference voltage input Midpoint reference for HSTL input receivers; typically tied to VDDQ/2 via external resistor divider
ZQ Impedance calibration terminal Connects to external 240 Ω resistor to ground for on-die output driver impedance tuning (±15% accuracy)

Key Features

Feature Design Value
Independent read/write ports Enables simultaneous 250 MHz read and write operations without arbitration delay or bus contention
2-word burst architecture Guarantees two consecutive 9-bit words delivered per access-reducing address overhead and maximizing bandwidth efficiency
Source-synchronous echo clocks (CQ/CQ) Eliminates PCB trace length matching requirements between data and clock nets in high-speed interfaces
Programmable read latency (DOFF) Allows system-level trade-off between timing margin (1.5-cycle) and pipeline efficiency (1-cycle) without hardware change
HSTL-18 compatible I/O Ensures interoperability with Xilinx Virtex-5/6, Intel Stratix IV/V, and other high-end FPGA memory controllers

Applications

Telecom Line Card Buffering Network Processor Packet Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/40G line interface modules.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as zero-latency shared buffer between SerDes PHY and traffic manager ASIC.

Use Value: Concurrent read/write eliminates FIFO staging, reducing end-to-end packet latency by up to 2 clock cycles versus single-port alternatives.

Use Scenario: Holding flow context and classification tables in multi-core network processors handling L2/L3 forwarding.

IC Role / Device Role / Timing Role: High-throughput memory resource accessed simultaneously by lookup engine (read) and update engine (write).

Use Value: 250 MHz DDR interface sustains >4 Gbps aggregate bandwidth-meeting worst-case table update + search concurrency in IPv6 longest-prefix-match engines.

High-Speed Test Equipment Memory Avionics Data Acquisition Buffer

Use Scenario: Capturing real-time analog-to-digital sample streams from multi-channel digitizers in automated test systems.

IC Role / Device Role / Timing Role: Write-port receives continuous ADC samples; read-port feeds DSP cores for real-time FFT analysis.

Use Value: Echo clocks (CQ) simplify timing closure at 500 MT/s, eliminating need for dynamic phase adjustment in FPGA capture logic.

Use Scenario: Buffering sensor telemetry (ARINC 429, MIL-STD-1553) in flight control computers requiring deterministic access.

IC Role / Device Role / Timing Role: Deterministic-latency memory node interfacing with dual-redundant microcontrollers via dedicated read/write buses.

Use Value: 1-cycle read latency (DOFF = LOW) guarantees sub-4 ns read response-meeting DO-254 Level A timing constraints for critical control loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-bit bus, 100 MHz max clock, LVDS I/O, no echo clocks Lower bandwidth (3.6 Gbps), suited for legacy telecom backplanes with differential signaling Choose when system uses LVDS PHY and does not require source-synchronous capture at >200 MHz
ISSI IS61WV102418BLL-10BLI 1M × 18 sync SRAM, 100 MHz, single-port, SSTL-2 I/O, no burst or echo clocks Half the density, no concurrent access; requires external arbitration logic Choose only for cost-sensitive, non-concurrent applications where 1.8 Gbps peak bandwidth suffices

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1525KV18-250BZXC uniquely delivers 72-Mbit density with true concurrent DDR ports, echo-clock timing, and QDR-II burst protocol-enabling higher throughput and simpler interface design in next-generation packet processing systems.

Availability

CY7C1525KV18-250BZXC is available at Aetrix Electronics and suitable for telecom infrastructure, network processor subsystems, and high-speed test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C1525KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.

The QDR® II SRAM product line targets high-bandwidth, low-latency memory subsystems in networking, test, and military/aerospace systems-emphasizing concurrent access, timing predictability, and signal integrity at multi-Gbps rates.

FAQ

What is the function of the DOFF pin on CY7C1525KV18-250BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency (standard QDR II operation); when LOW, it reduces latency to 1 cycle for QDR I compatibility. This setting directly affects the timing relationship between address assertion and first valid Q[8:0] output, and must be held stable during initialization.

How does the ZQ pin operate, and what external component is required?

The ZQ pin connects to a precision 240 Ω resistor to ground for on-die output driver impedance calibration. During ZQ calibration cycles (initiated via command or power-up), the device measures this reference to tune its HSTL output drivers to ±15% of target impedance, ensuring consistent signal integrity across voltage and temperature.

Can CY7C1525KV18-250BZXC operate with only one clock domain (K = C)?

Yes-the device supports single-clock-domain operation where K and C are tied together. In this mode, read data is clocked by the same edge that latches read addresses, simplifying board layout but reducing maximum achievable bandwidth compared to dual-clock (K/C separated) configuration with echo-clock capture.

What is the role of BWS0 in CY7C1525KV18-250BZXC, given its 9-bit data width?

BWS0 is the sole byte write select for the 9-bit interface; it operates as a global write enable for D[8:0]. Unlike x18/x36 variants with multiple BWS pins, CY7C1525KV18 uses BWS0 to gate the entire 9-bit word-either writing all bits or none-making it functionally equivalent to a standard write enable (WE#) for this configuration.

CY7C1525KV18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
8M x 9
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1525KV18-250BZXC FAQ

1.How can I place an order for CY7C1525KV18-250BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1525KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1525KV18-250BZXC reliable?

The price and inventory of CY7C1525KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1525KV18-250BZXC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1525KV18-250BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1525KV18-250BZXC?

CY7C1525KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1525KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1525KV18-250BZXC?

For technical support, including CY7C1525KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1525KV18-250BZXC requirements.

6.How does Aetrix verify that CY7C1525KV18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1525KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1525KV18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1525KV18-250BZXC?

All CY7C1525KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1525KV18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1525KV18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1525KV18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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