Cypress Semiconductor Corp CY7C1525KV18-300BZC
- Part No.:
- CY7C1525KV18-300BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1525KV18-300BZC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1525KV18-300BZC from Cypress Semiconductor is an 8M × 9-bit (72-Mbit), 300 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (600 Mbps per port), and 1.8V core / 1.4–1.8V I/O supply. It delivers concurrent read-write transactions with 1-cycle (DOFF = LOW) or 1.5-cycle (DOFF = HIGH) read latency and is used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C1525KV18-300BZC datasheet, CY7C1525KV18-300BZC pinout, CY7C1525KV18-300BZC application, or CY7C1525KV18-300BZC equivalent, key selection criteria include burst depth (2-word), echo clock support (CQ/CQ), JTAG 1149.1 compliance, HSTL-18 I/O compatibility, and FBGA-165 package thermal/mechanical constraints.
Technical Context
This QDR II SRAM uses dual independent clock domains: K/K for address/data capture and C/C for output timing, enabling precise DDR edge alignment without bus turnaround. Its internal PLL synchronizes data placement to minimize skew between read data and echo clocks (CQ/CQ).
The device implements synchronous self-timed writes with byte write select (BWS0) control for 9-bit data width, and supports depth expansion via RPS/WPS signals. All inputs are registered on K-clock rising edges; all outputs are registered on C-clock rising edges, ensuring deterministic timing at 300 MHz operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8M × 9-bit = 72 Mbit; provides 8,388,608 words of 9-bit data for high-throughput buffer storage. |
| Max Clock Frequency | 300 MHz; enables 600 MT/s effective data rate per port using DDR interface. |
| Read Latency | 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH); determines minimum time from address valid to first output word. |
| Core Supply | VDD = 1.8 V ±0.1 V; defines power domain for memory array and internal logic, requiring tight regulation. |
| I/O Supply Range | VDDQ = 1.4 V to 1.8 V; supports interoperability with 1.5V or 1.8V HSTL-18 systems. |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm); provides 0.8 mm ball pitch, suitable for high-density PCB routing and thermal dissipation. |
| Burst Length | 2-word fixed burst; delivers two consecutive 9-bit words per access, optimizing bandwidth efficiency. |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZC suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Synchronous write data input | 9-bit parallel data sampled on rising edge of K clock; latched internally for self-timed write execution. |
| Q[8:0] | Synchronous read data output | 9-bit parallel output registered on rising edge of C clock; synchronized to echo clock CQ for receiver capture. |
| WPS | Write port select | Active-low signal enabling write operations; deassertion blocks D[8:0] acceptance regardless of clock state. |
| RPS | Read port select | Active-low signal enabling read operations; controls activation of read address decode and output drivers. |
| BWS0 | Byte write select | Active-low control for full 9-bit write; when asserted, allows D[8:0] to be written; when deasserted, write is ignored. |
| K, K | Input clock pair | Differential clock inputs for address and write data capture; only rising edges used for synchronization. |
| C, C | Output clock pair | Differential clocks driving Q[8:0] and CQ outputs; minimizes flight-time mismatch in high-speed trace routing. |
| CQ, CQ | Echo clock outputs | Source-synchronous clocks aligned to Q[8:0] data edges; simplifies setup/hold timing at receiving FPGA/ASIC. |
| DOFF | Read latency mode select | High = 1.5-cycle latency; Low = 1-cycle latency; configures internal pipeline depth before data output. |
| TCK/TMS/TDI/TDO | JTAG boundary scan interface | IEEE 1149.1-compliant test access port for production testing and in-system verification. |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Enables true concurrent access-no bus turnaround required, doubling effective bandwidth over single-port SRAMs. |
| 2-word DDR burst architecture | Delivers 18 bits per clock cycle per port at 300 MHz, achieving 5.4 Gb/s aggregate bandwidth (read + write). |
| HSTL-18 compatible I/O | Supports 1.4–1.8V VDDQ with programmable drive strength, ensuring signal integrity in high-speed backplane and switch fabric designs. |
| On-chip PLL for data placement | Aligns output data edges precisely to C/C clock transitions, reducing timing margin requirements in 600 MT/s systems. |
| Full data coherency | Guarantees that any read returns the most recently written data-even during overlapping read/write operations. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches operating at 10G/40G line rates. IC Role / Device Role / Timing Role: High-speed shared buffer providing zero-wait-state concurrent read/write access for traffic management ASICs. Use Value: Eliminates bus turnaround delays, sustaining 5.4 Gb/s sustained throughput while maintaining strict latency predictability for QoS scheduling. | Use Scenario: Frame buffering in carrier-grade SDH/SONET add-drop multiplexers with strict jitter and latency budgets. IC Role / Device Role / Timing Role: Deterministic-latency memory interfacing directly to SerDes PHYs and framer ICs via HSTL-18 buses. Use Value: 1-cycle read latency (DOFF = LOW) and echo clock (CQ) support enable sub-5 ns data capture windows at 300 MHz clock rates. |
| Baseband Processing in 4G LTE eNodeB | High-Performance Test Equipment Memory |
Use Scenario: Real-time buffering of IQ samples between digital front-end and channel processing units in wireless base stations. IC Role / Device Role / Timing Role: Dual-port SRAM acting as ping-pong buffer for continuous DMA transfers without CPU intervention. Use Value: Separate RPS/WPS controls allow independent arbitration of read/write channels, preventing FIFO overflow under bursty RF traffic loads. | Use Scenario: Pattern memory in automated test equipment (ATE) generating high-speed digital stimulus for SoC validation. IC Role / Device Role / Timing Role: High-reliability, low-jitter memory delivering deterministic 2-word bursts synchronized to system clock and echo clocks. Use Value: JTAG 1149.1 support enables in-system boundary scan verification, critical for production test coverage of dense BGA interconnects. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-bit width, 10 ns access, 1.5V core, no echo clocks or DOFF latency control | Targeted at legacy parallel bus systems; lacks QDR II burst and DDR timing features | Select when migrating from older QDR I designs with fixed 1-cycle latency and no CQ support |
| ISSI IS61WV102418BLL-10TLI | 1M × 18-bit, 10 ns async access, 3.3V/2.5V/1.8V supply, no DDR or burst capability | Designed for general-purpose synchronous SRAM use cases-not optimized for packet buffering or high-concurrency workloads | Select only for cost-sensitive, lower-bandwidth applications where QDR II features are unnecessary |
Compared with IDT72T3615L10BG and IS61WV102418BLL-10TLI, CY7C1525KV18-300BZC uniquely delivers 72-Mbit density with 2-word DDR bursts, echo clocks, and configurable read latency-enabling higher throughput and tighter timing closure in modern switch fabric and baseband designs.
Availability
CY7C1525KV18-300BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, 4G LTE baseband processing, and high-performance test equipment requiring stable component supply across extended product lifecycles.
Supply support for CY7C1525KV18-300BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with a focus on signal integrity and timing precision.
The QDR® II SRAM product line targets high-speed data-path applications demanding deterministic latency, concurrent access, and DDR bandwidth-specifically engineered for switch fabric, packet processing, and real-time baseband subsystems.
FAQ
What is the function of the DOFF pin on CY7C1525KV18-300BZC?
The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for improved timing margin in systems with longer data paths; when LOW, it enables 1-cycle latency for minimal delay. This setting affects internal pipeline staging but does not alter burst length, clock frequency, or data width.
Can CY7C1525KV18-300BZC operate with only a single clock domain?
Yes-CY7C1525KV18-300BZC supports single-clock mode where K and C are driven by the same source. In this configuration, the device uses K for input registration and C for output registration, eliminating need for separate clock trees but requiring careful board-level skew control between K and C nets.
How does the BWS0 pin differ from NWS signals in CY7C1525KV18-300BZC?
BWS0 is the sole byte write select for the 9-bit data path in CY7C1525KV18-300BZC and controls write enable for all nine bits simultaneously. Unlike NWS0/NWS1 (used only in x8 devices), BWS0 is not nibble-granular-it's a full-width active-low write gate, making it simpler to interface but less flexible than nibble-select schemes.
Is the 165-ball FBGA package of CY7C1525KV18-300BZC compatible with standard reflow profiles?
Yes-the BZC suffix denotes a Pb-free 165-ball FBGA package qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and compatible with standard lead-free reflow profiles (peak 260°C). Board layout must observe 0.8 mm ball pitch, thermal pad grounding, and controlled impedance routing for K/C/CQ signals.
CY7C1525KV18-300BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 8M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1525KV18-300BZC FAQ
1.How can I place an order for CY7C1525KV18-300BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1525KV18-300BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1525KV18-300BZC reliable?
The price and inventory of CY7C1525KV18-300BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1525KV18-300BZC is usually 5 days.
3.What payment methods are accepted for CY7C1525KV18-300BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1525KV18-300BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1525KV18-300BZC?
CY7C1525KV18-300BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1525KV18-300BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1525KV18-300BZC?
For technical support, including CY7C1525KV18-300BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1525KV18-300BZC requirements.
6.How does Aetrix verify that CY7C1525KV18-300BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1525KV18-300BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1525KV18-300BZC meets industry standards.
7.What is the process for return or replacement of CY7C1525KV18-300BZC?
All CY7C1525KV18-300BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1525KV18-300BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1525KV18-300BZC part is unused and in its original packaging.
Return procedure for CY7C1525KV18-300BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1525KV18-300BZC Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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Microchip Technology

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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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