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Cypress Semiconductor Corp CY7C1525KV18-300BZC

Part No.:
CY7C1525KV18-300BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1525KV18-300BZC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,762

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Product details

Overview

CY7C1525KV18-300BZC from Cypress Semiconductor is an 8M × 9-bit (72-Mbit), 300 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (600 Mbps per port), and 1.8V core / 1.4–1.8V I/O supply. It delivers concurrent read-write transactions with 1-cycle (DOFF = LOW) or 1.5-cycle (DOFF = HIGH) read latency and is used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1525KV18-300BZC datasheet, CY7C1525KV18-300BZC pinout, CY7C1525KV18-300BZC application, or CY7C1525KV18-300BZC equivalent, key selection criteria include burst depth (2-word), echo clock support (CQ/CQ), JTAG 1149.1 compliance, HSTL-18 I/O compatibility, and FBGA-165 package thermal/mechanical constraints.

Technical Context

This QDR II SRAM uses dual independent clock domains: K/K for address/data capture and C/C for output timing, enabling precise DDR edge alignment without bus turnaround. Its internal PLL synchronizes data placement to minimize skew between read data and echo clocks (CQ/CQ).

The device implements synchronous self-timed writes with byte write select (BWS0) control for 9-bit data width, and supports depth expansion via RPS/WPS signals. All inputs are registered on K-clock rising edges; all outputs are registered on C-clock rising edges, ensuring deterministic timing at 300 MHz operation.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density8M × 9-bit = 72 Mbit; provides 8,388,608 words of 9-bit data for high-throughput buffer storage.
Max Clock Frequency300 MHz; enables 600 MT/s effective data rate per port using DDR interface.
Read Latency1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH); determines minimum time from address valid to first output word.
Core SupplyVDD = 1.8 V ±0.1 V; defines power domain for memory array and internal logic, requiring tight regulation.
I/O Supply RangeVDDQ = 1.4 V to 1.8 V; supports interoperability with 1.5V or 1.8V HSTL-18 systems.
Package165-ball FBGA (13 × 15 × 1.4 mm); provides 0.8 mm ball pitch, suitable for high-density PCB routing and thermal dissipation.
Burst Length2-word fixed burst; delivers two consecutive 9-bit words per access, optimizing bandwidth efficiency.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZC suffix).

Pin/TerminalCircuit RoleDesign Meaning
D[8:0]Synchronous write data input9-bit parallel data sampled on rising edge of K clock; latched internally for self-timed write execution.
Q[8:0]Synchronous read data output9-bit parallel output registered on rising edge of C clock; synchronized to echo clock CQ for receiver capture.
WPSWrite port selectActive-low signal enabling write operations; deassertion blocks D[8:0] acceptance regardless of clock state.
RPSRead port selectActive-low signal enabling read operations; controls activation of read address decode and output drivers.
BWS0Byte write selectActive-low control for full 9-bit write; when asserted, allows D[8:0] to be written; when deasserted, write is ignored.
K, KInput clock pairDifferential clock inputs for address and write data capture; only rising edges used for synchronization.
C, COutput clock pairDifferential clocks driving Q[8:0] and CQ outputs; minimizes flight-time mismatch in high-speed trace routing.
CQ, CQEcho clock outputsSource-synchronous clocks aligned to Q[8:0] data edges; simplifies setup/hold timing at receiving FPGA/ASIC.
DOFFRead latency mode selectHigh = 1.5-cycle latency; Low = 1-cycle latency; configures internal pipeline depth before data output.
TCK/TMS/TDI/TDOJTAG boundary scan interfaceIEEE 1149.1-compliant test access port for production testing and in-system verification.

Key Features

FeatureDesign Value
Independent read/write portsEnables true concurrent access-no bus turnaround required, doubling effective bandwidth over single-port SRAMs.
2-word DDR burst architectureDelivers 18 bits per clock cycle per port at 300 MHz, achieving 5.4 Gb/s aggregate bandwidth (read + write).
HSTL-18 compatible I/OSupports 1.4–1.8V VDDQ with programmable drive strength, ensuring signal integrity in high-speed backplane and switch fabric designs.
On-chip PLL for data placementAligns output data edges precisely to C/C clock transitions, reducing timing margin requirements in 600 MT/s systems.
Full data coherencyGuarantees that any read returns the most recently written data-even during overlapping read/write operations.

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches operating at 10G/40G line rates.

IC Role / Device Role / Timing Role: High-speed shared buffer providing zero-wait-state concurrent read/write access for traffic management ASICs.

Use Value: Eliminates bus turnaround delays, sustaining 5.4 Gb/s sustained throughput while maintaining strict latency predictability for QoS scheduling.

Use Scenario: Frame buffering in carrier-grade SDH/SONET add-drop multiplexers with strict jitter and latency budgets.

IC Role / Device Role / Timing Role: Deterministic-latency memory interfacing directly to SerDes PHYs and framer ICs via HSTL-18 buses.

Use Value: 1-cycle read latency (DOFF = LOW) and echo clock (CQ) support enable sub-5 ns data capture windows at 300 MHz clock rates.

Baseband Processing in 4G LTE eNodeBHigh-Performance Test Equipment Memory

Use Scenario: Real-time buffering of IQ samples between digital front-end and channel processing units in wireless base stations.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ping-pong buffer for continuous DMA transfers without CPU intervention.

Use Value: Separate RPS/WPS controls allow independent arbitration of read/write channels, preventing FIFO overflow under bursty RF traffic loads.

Use Scenario: Pattern memory in automated test equipment (ATE) generating high-speed digital stimulus for SoC validation.

IC Role / Device Role / Timing Role: High-reliability, low-jitter memory delivering deterministic 2-word bursts synchronized to system clock and echo clocks.

Use Value: JTAG 1149.1 support enables in-system boundary scan verification, critical for production test coverage of dense BGA interconnects.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-bit width, 10 ns access, 1.5V core, no echo clocks or DOFF latency controlTargeted at legacy parallel bus systems; lacks QDR II burst and DDR timing featuresSelect when migrating from older QDR I designs with fixed 1-cycle latency and no CQ support
ISSI IS61WV102418BLL-10TLI1M × 18-bit, 10 ns async access, 3.3V/2.5V/1.8V supply, no DDR or burst capabilityDesigned for general-purpose synchronous SRAM use cases-not optimized for packet buffering or high-concurrency workloadsSelect only for cost-sensitive, lower-bandwidth applications where QDR II features are unnecessary

Compared with IDT72T3615L10BG and IS61WV102418BLL-10TLI, CY7C1525KV18-300BZC uniquely delivers 72-Mbit density with 2-word DDR bursts, echo clocks, and configurable read latency-enabling higher throughput and tighter timing closure in modern switch fabric and baseband designs.

Availability

CY7C1525KV18-300BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, 4G LTE baseband processing, and high-performance test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C1525KV18-300BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with a focus on signal integrity and timing precision.

The QDR® II SRAM product line targets high-speed data-path applications demanding deterministic latency, concurrent access, and DDR bandwidth-specifically engineered for switch fabric, packet processing, and real-time baseband subsystems.

FAQ

What is the function of the DOFF pin on CY7C1525KV18-300BZC?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for improved timing margin in systems with longer data paths; when LOW, it enables 1-cycle latency for minimal delay. This setting affects internal pipeline staging but does not alter burst length, clock frequency, or data width.

Can CY7C1525KV18-300BZC operate with only a single clock domain?

Yes-CY7C1525KV18-300BZC supports single-clock mode where K and C are driven by the same source. In this configuration, the device uses K for input registration and C for output registration, eliminating need for separate clock trees but requiring careful board-level skew control between K and C nets.

How does the BWS0 pin differ from NWS signals in CY7C1525KV18-300BZC?

BWS0 is the sole byte write select for the 9-bit data path in CY7C1525KV18-300BZC and controls write enable for all nine bits simultaneously. Unlike NWS0/NWS1 (used only in x8 devices), BWS0 is not nibble-granular-it's a full-width active-low write gate, making it simpler to interface but less flexible than nibble-select schemes.

Is the 165-ball FBGA package of CY7C1525KV18-300BZC compatible with standard reflow profiles?

Yes-the BZC suffix denotes a Pb-free 165-ball FBGA package qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and compatible with standard lead-free reflow profiles (peak 260°C). Board layout must observe 0.8 mm ball pitch, thermal pad grounding, and controlled impedance routing for K/C/CQ signals.

CY7C1525KV18-300BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
8M x 9
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1525KV18-300BZC FAQ

1.How can I place an order for CY7C1525KV18-300BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1525KV18-300BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1525KV18-300BZC reliable?

The price and inventory of CY7C1525KV18-300BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1525KV18-300BZC is usually 5 days.

3.What payment methods are accepted for CY7C1525KV18-300BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1525KV18-300BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1525KV18-300BZC?

CY7C1525KV18-300BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1525KV18-300BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1525KV18-300BZC?

For technical support, including CY7C1525KV18-300BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1525KV18-300BZC requirements.

6.How does Aetrix verify that CY7C1525KV18-300BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1525KV18-300BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1525KV18-300BZC meets industry standards.

7.What is the process for return or replacement of CY7C1525KV18-300BZC?

All CY7C1525KV18-300BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1525KV18-300BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1525KV18-300BZC part is unused and in its original packaging.

Return procedure for CY7C1525KV18-300BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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