Cypress Semiconductor Corp CY7C1525KV18-300BZXC
- Part No.:
- CY7C1525KV18-300BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1525KV18-300BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1525KV18-300BZXC from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 8M × 9 organization, 300 MHz maximum operating frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements dual independent DDR read/write ports with 2-word burst, echo clocks (CQ/CQ), and DOFF-controlled 1-cycle or 1.5-cycle read latency-used in high-bandwidth packet buffering for network line cards.
For engineers reviewing the CY7C1525KV18-300BZXC datasheet, CY7C1525KV18-300BZXC pinout, CY7C1525KV18-300BZXC application, or CY7C1525KV18-300BZXC equivalent, key selection criteria include synchronous self-timed write timing, HSTL-18-compatible variable-drive outputs, JTAG 1149.1 test access, and FBGA-165 package thermal/mechanical compatibility with high-speed PCB stackups.
Technical Context
The device uses separate K/K input clocks for address/data capture on rising edges only, and independent C/C output clocks to minimize skew between data and capture clock paths. Its PLL ensures precise data placement relative to echo clocks (CQ/CQ), enabling reliable latch timing at 700 MT/s DDR rates.
Read and write ports share a multiplexed address bus but operate fully concurrently via RPS/WPS controls; depth expansion is supported through port-select signals (RPS/WPS) and byte write enables (BWS0). All operations are synchronous, with internal pipelining delivering deterministic 1- or 1.5-cycle read latency depending on DOFF state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (8M × 9 configuration) |
| Max Clock Frequency | 300 MHz - defines maximum sustained bandwidth of 5.4 GB/s (700 MT/s × 9-bit bus) |
| Core Supply Voltage | 1.8 V ±0.1 V - powers memory array and internal logic; requires low-noise regulation |
| I/O Supply Range | 1.4 V to 1.8 V - supports HSTL-18 signaling; enables interoperability with 1.5 V or 1.8 V controllers |
| Read Latency | 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - determines minimum read turnaround time in pipeline stages |
| Burst Length | 2-word fixed burst - reduces address overhead per transfer; matches typical cache-line or packet-word alignment |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - provides 0.8 mm ball pitch for high-density routing and thermal dissipation |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant lead-free finish (BZXC suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Synchronous write data inputs | 9-bit parallel data sampled on rising edge of K clock; latched internally for self-timed write execution |
| Q[8:0] | Synchronous read data outputs | 9-bit DDR outputs registered to C/C clocks; driven with programmable HSTL-18 impedance |
| K / K | Input clocks (read/write) | Two-phase clock pair; rising edges latch addresses and data-no internal phase shifting required |
| C / C | Output clocks (read) | Separate source-synchronous clocks for Q-bus; minimizes flight-time mismatch vs. data |
| CQ / CQ | Echo clocks | Delayed copies of C/C; simplify receiver-side capture by aligning with data eye center |
| RPS / WPS | Port select controls | Active-low enables for independent read/write port activation; enables depth expansion without external logic |
| BWS0 | Byte write select | Active-low control for all 9 bits; when deasserted, D[8:0] is ignored during write cycle |
| DOFF | Read latency mode | High = 1.5-cycle latency (pipelined); Low = 1-cycle latency (QDR I–compatible timing) |
| VDD / VDDQ / VSS | Power/ground terminals | Dual-supply architecture: VDD = 1.8 V core, VDDQ = 1.4–1.8 V I/O, VSS = common ground reference |
| TCK/TMS/TDI/TDO | JTAG boundary scan | IEEE 1149.1-compliant test interface; supports production testing and in-system verification |
Key Features
| Feature | Design Value |
|---|---|
| Independent DDR read/write ports | Enables full-duplex memory access-no bus turnaround penalty; sustains 5.4 GB/s aggregate bandwidth |
| Programmable read latency (DOFF) | Allows system-level timing optimization: 1-cycle for latency-critical control paths, 1.5-cycle for maximum throughput pipelines |
| HSTL-18 variable-drive outputs | Adjustable drive strength compensates for trace length variations and maintains signal integrity at 700 MT/s |
| Echo clock (CQ/CQ) support | Eliminates need for receiver-side PLL or delay-locked loop; simplifies FPGA or ASIC capture logic design |
| JTAG 1149.1 test access port | Enables boundary scan testing of interconnects in dense high-speed layouts without physical probe access |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-throughput shared buffer with concurrent read/write access for traffic shaping and queuing engines. Use Value: 700 MT/s DDR bandwidth and zero bus turnaround enable real-time packet classification at 10 Gbps+ line rates. | Use Scenario: Serving as frame buffer in OC-192/STM-64 SONET/SDH add-drop multiplexers. IC Role / Device Role / Timing Role: Synchronous dual-port SRAM providing deterministic latency for time-sensitive TDM payload reassembly. Use Value: 1-cycle read latency (DOFF = LOW) meets sub-10 ns timing budgets for 622 Mbps channel processing. |
| Baseband Processing Memory | FPGA Co-Processor Cache |
Use Scenario: Holding FFT/IFFT intermediate results in LTE/LTE-A baseband units. IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced directly to DSP cores or hardware accelerators. Use Value: Dual-port architecture allows simultaneous coefficient fetch and result writeback-doubling effective MAC throughput. | Use Scenario: Acting as local instruction/data cache for Xilinx Virtex or Intel Stratix FPGA-based compute engines. IC Role / Device Role / Timing Role: High-speed external memory mapped into FPGA's AXI or Avalon-MM address space. Use Value: Echo clocks (CQ/CQ) and HSTL-18 outputs ensure clean setup/hold margins at 300 MHz clock domain crossings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit (2M × 18), 100 MHz max, LVDS I/O, no echo clocks | Limited to lower bandwidth; requires external clock forwarding and termination networks | Select only if legacy LVDS interface or smaller density suffices and echo-clock simplification is not needed |
| ISSI IS61WV102418BLL-10BLI | 18-Mbit (512K × 36), 100 MHz, single-ended LVTTL, asynchronous interface | No DDR, no pipelining, no concurrent ports-unsuitable for QDR II–class throughput or latency targets | Only viable for cost-sensitive, non-pipelined control-plane buffers where bandwidth < 1 GB/s is acceptable |
Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1525KV18-300BZXC delivers 5.4 GB/s bandwidth via true dual-port DDR, eliminates board-level clock forwarding complexity with CQ/CQ, and supports deterministic sub-ns timing closure in FPGA-based systems-making it uniquely suited for next-generation packet-processing architectures.
Availability
CY7C1525KV18-300BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and FPGA co-processor cache applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C1525KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and mixed-signal ICs for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level integration.
CY7C1525KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, high-bandwidth memory access in packet-forwarding engines, baseband processors, and FPGA-accelerated compute platforms.
FAQ
What is the function of the DOFF pin on CY7C1525KV18-300BZXC?
The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle pipelined read latency for maximum throughput; when LOW, it configures 1-cycle latency compatible with QDR I timing. This setting directly affects the number of clock cycles between address assertion and valid Q-bus output, and must be held stable during operation.
How does the CY7C1525KV18-300BZXC handle write operations without external write-enable strobes?
It uses synchronous self-timed writes controlled by WPS (Write Port Select) and BWS0 (Byte Write Select). WPS sampled on the rising edge of K initiates the write; internal circuitry automatically sequences address decode, data latching, and array write-eliminating need for external write-strobe timing control or wait-state generation.
Can CY7C1525KV18-300BZXC operate with only one clock domain (K = C)?
Yes-single-clock mode is supported per datasheet Section 9. When K and C are tied together, the device uses that common clock for both input latching and output registration. However, echo clocks (CQ/CQ) and optimal skew compensation require separate C/C; single-clock mode trades timing margin for simplified clock tree design.
What is the purpose of the ZQ pin on CY7C1525KV18-300BZXC?
ZQ is a dedicated reference pin for impedance calibration of HSTL-18 output drivers. Connected to a 240 Ω ±1% resistor to VSS, it enables on-die termination calibration to maintain consistent output drive strength across voltage/temperature variations-critical for signal integrity at 700 MT/s DDR rates.
CY7C1525KV18-300BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 8M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1525KV18-300BZXC FAQ
1.How can I place an order for CY7C1525KV18-300BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1525KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1525KV18-300BZXC reliable?
The price and inventory of CY7C1525KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1525KV18-300BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1525KV18-300BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1525KV18-300BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1525KV18-300BZXC?
CY7C1525KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1525KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1525KV18-300BZXC?
For technical support, including CY7C1525KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1525KV18-300BZXC requirements.
6.How does Aetrix verify that CY7C1525KV18-300BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1525KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1525KV18-300BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1525KV18-300BZXC?
All CY7C1525KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1525KV18-300BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1525KV18-300BZXC part is unused and in its original packaging.
Return procedure for CY7C1525KV18-300BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1525KV18-300BZXC Tags

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