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Cypress Semiconductor Corp CY7C1525KV18-300BZXC

Part No.:
CY7C1525KV18-300BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1525KV18-300BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:229

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Product details

Overview

CY7C1525KV18-300BZXC from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 8M × 9 organization, 300 MHz maximum operating frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements dual independent DDR read/write ports with 2-word burst, echo clocks (CQ/CQ), and DOFF-controlled 1-cycle or 1.5-cycle read latency-used in high-bandwidth packet buffering for network line cards.

For engineers reviewing the CY7C1525KV18-300BZXC datasheet, CY7C1525KV18-300BZXC pinout, CY7C1525KV18-300BZXC application, or CY7C1525KV18-300BZXC equivalent, key selection criteria include synchronous self-timed write timing, HSTL-18-compatible variable-drive outputs, JTAG 1149.1 test access, and FBGA-165 package thermal/mechanical compatibility with high-speed PCB stackups.

Technical Context

The device uses separate K/K input clocks for address/data capture on rising edges only, and independent C/C output clocks to minimize skew between data and capture clock paths. Its PLL ensures precise data placement relative to echo clocks (CQ/CQ), enabling reliable latch timing at 700 MT/s DDR rates.

Read and write ports share a multiplexed address bus but operate fully concurrently via RPS/WPS controls; depth expansion is supported through port-select signals (RPS/WPS) and byte write enables (BWS0). All operations are synchronous, with internal pipelining delivering deterministic 1- or 1.5-cycle read latency depending on DOFF state.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (8M × 9 configuration)
Max Clock Frequency300 MHz - defines maximum sustained bandwidth of 5.4 GB/s (700 MT/s × 9-bit bus)
Core Supply Voltage1.8 V ±0.1 V - powers memory array and internal logic; requires low-noise regulation
I/O Supply Range1.4 V to 1.8 V - supports HSTL-18 signaling; enables interoperability with 1.5 V or 1.8 V controllers
Read Latency1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - determines minimum read turnaround time in pipeline stages
Burst Length2-word fixed burst - reduces address overhead per transfer; matches typical cache-line or packet-word alignment
Package165-ball FBGA (13 × 15 × 1.4 mm) - provides 0.8 mm ball pitch for high-density routing and thermal dissipation

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant lead-free finish (BZXC suffix).

Pin/TerminalCircuit RoleDesign Meaning
D[8:0]Synchronous write data inputs9-bit parallel data sampled on rising edge of K clock; latched internally for self-timed write execution
Q[8:0]Synchronous read data outputs9-bit DDR outputs registered to C/C clocks; driven with programmable HSTL-18 impedance
K / KInput clocks (read/write)Two-phase clock pair; rising edges latch addresses and data-no internal phase shifting required
C / COutput clocks (read)Separate source-synchronous clocks for Q-bus; minimizes flight-time mismatch vs. data
CQ / CQEcho clocksDelayed copies of C/C; simplify receiver-side capture by aligning with data eye center
RPS / WPSPort select controlsActive-low enables for independent read/write port activation; enables depth expansion without external logic
BWS0Byte write selectActive-low control for all 9 bits; when deasserted, D[8:0] is ignored during write cycle
DOFFRead latency modeHigh = 1.5-cycle latency (pipelined); Low = 1-cycle latency (QDR I–compatible timing)
VDD / VDDQ / VSSPower/ground terminalsDual-supply architecture: VDD = 1.8 V core, VDDQ = 1.4–1.8 V I/O, VSS = common ground reference
TCK/TMS/TDI/TDOJTAG boundary scanIEEE 1149.1-compliant test interface; supports production testing and in-system verification

Key Features

FeatureDesign Value
Independent DDR read/write portsEnables full-duplex memory access-no bus turnaround penalty; sustains 5.4 GB/s aggregate bandwidth
Programmable read latency (DOFF)Allows system-level timing optimization: 1-cycle for latency-critical control paths, 1.5-cycle for maximum throughput pipelines
HSTL-18 variable-drive outputsAdjustable drive strength compensates for trace length variations and maintains signal integrity at 700 MT/s
Echo clock (CQ/CQ) supportEliminates need for receiver-side PLL or delay-locked loop; simplifies FPGA or ASIC capture logic design
JTAG 1149.1 test access portEnables boundary scan testing of interconnects in dense high-speed layouts without physical probe access

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: High-throughput shared buffer with concurrent read/write access for traffic shaping and queuing engines.

Use Value: 700 MT/s DDR bandwidth and zero bus turnaround enable real-time packet classification at 10 Gbps+ line rates.

Use Scenario: Serving as frame buffer in OC-192/STM-64 SONET/SDH add-drop multiplexers.

IC Role / Device Role / Timing Role: Synchronous dual-port SRAM providing deterministic latency for time-sensitive TDM payload reassembly.

Use Value: 1-cycle read latency (DOFF = LOW) meets sub-10 ns timing budgets for 622 Mbps channel processing.

Baseband Processing MemoryFPGA Co-Processor Cache

Use Scenario: Holding FFT/IFFT intermediate results in LTE/LTE-A baseband units.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced directly to DSP cores or hardware accelerators.

Use Value: Dual-port architecture allows simultaneous coefficient fetch and result writeback-doubling effective MAC throughput.

Use Scenario: Acting as local instruction/data cache for Xilinx Virtex or Intel Stratix FPGA-based compute engines.

IC Role / Device Role / Timing Role: High-speed external memory mapped into FPGA's AXI or Avalon-MM address space.

Use Value: Echo clocks (CQ/CQ) and HSTL-18 outputs ensure clean setup/hold margins at 300 MHz clock domain crossings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-Mbit (2M × 18), 100 MHz max, LVDS I/O, no echo clocksLimited to lower bandwidth; requires external clock forwarding and termination networksSelect only if legacy LVDS interface or smaller density suffices and echo-clock simplification is not needed
ISSI IS61WV102418BLL-10BLI18-Mbit (512K × 36), 100 MHz, single-ended LVTTL, asynchronous interfaceNo DDR, no pipelining, no concurrent ports-unsuitable for QDR II–class throughput or latency targetsOnly viable for cost-sensitive, non-pipelined control-plane buffers where bandwidth < 1 GB/s is acceptable

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1525KV18-300BZXC delivers 5.4 GB/s bandwidth via true dual-port DDR, eliminates board-level clock forwarding complexity with CQ/CQ, and supports deterministic sub-ns timing closure in FPGA-based systems-making it uniquely suited for next-generation packet-processing architectures.

Availability

CY7C1525KV18-300BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and FPGA co-processor cache applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1525KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and mixed-signal ICs for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level integration.

CY7C1525KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, high-bandwidth memory access in packet-forwarding engines, baseband processors, and FPGA-accelerated compute platforms.

FAQ

What is the function of the DOFF pin on CY7C1525KV18-300BZXC?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle pipelined read latency for maximum throughput; when LOW, it configures 1-cycle latency compatible with QDR I timing. This setting directly affects the number of clock cycles between address assertion and valid Q-bus output, and must be held stable during operation.

How does the CY7C1525KV18-300BZXC handle write operations without external write-enable strobes?

It uses synchronous self-timed writes controlled by WPS (Write Port Select) and BWS0 (Byte Write Select). WPS sampled on the rising edge of K initiates the write; internal circuitry automatically sequences address decode, data latching, and array write-eliminating need for external write-strobe timing control or wait-state generation.

Can CY7C1525KV18-300BZXC operate with only one clock domain (K = C)?

Yes-single-clock mode is supported per datasheet Section 9. When K and C are tied together, the device uses that common clock for both input latching and output registration. However, echo clocks (CQ/CQ) and optimal skew compensation require separate C/C; single-clock mode trades timing margin for simplified clock tree design.

What is the purpose of the ZQ pin on CY7C1525KV18-300BZXC?

ZQ is a dedicated reference pin for impedance calibration of HSTL-18 output drivers. Connected to a 240 Ω ±1% resistor to VSS, it enables on-die termination calibration to maintain consistent output drive strength across voltage/temperature variations-critical for signal integrity at 700 MT/s DDR rates.

CY7C1525KV18-300BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
8M x 9
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1525KV18-300BZXC FAQ

1.How can I place an order for CY7C1525KV18-300BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1525KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1525KV18-300BZXC reliable?

The price and inventory of CY7C1525KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1525KV18-300BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1525KV18-300BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1525KV18-300BZXC transactions.

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4.How is shipping managed for CY7C1525KV18-300BZXC?

CY7C1525KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1525KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1525KV18-300BZXC?

For technical support, including CY7C1525KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1525KV18-300BZXC requirements.

6.How does Aetrix verify that CY7C1525KV18-300BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1525KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1525KV18-300BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1525KV18-300BZXC?

All CY7C1525KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1525KV18-300BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1525KV18-300BZXC part is unused and in its original packaging.

Return procedure for CY7C1525KV18-300BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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