Cypress Semiconductor Corp CY7C1525KV18-333BZC
- Part No.:
- CY7C1525KV18-333BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1525KV18-333BZC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1525KV18-333BZC from Cypress Semiconductor is an 8M × 9 (72-Mbit) QDR® II SRAM with synchronous pipelined architecture, dual independent read/write ports, 333 MHz K-clock operation, DDR interfaces delivering 666 MT/s effective data rate, and 1.8V core / 1.4–1.8V I/O supply. It serves as high-bandwidth buffer memory in network packet processors and telecom line cards requiring concurrent access and strict timing coherency.
For engineers reviewing the CY7C1525KV18-333BZC datasheet, CY7C1525KV18-333BZC pinout, CY7C1525KV18-333BZC application, or CY7C1525KV18-333BZC equivalent, key selection criteria include burst depth (2-word), DOFF-controlled read latency (1.5 or 1 cycle), echo clock (CQ/CQ) support for source-synchronous capture, and FBGA-165 package compatibility with high-speed PCB layout constraints.
Technical Context
The device implements a true dual-port QDR II architecture: separate address latching on alternating K-clock edges for read/write, fully independent data paths eliminating bus turnaround, and synchronous self-timed writes with internal write-enable sequencing. All inputs are registered to K/K clocks; all outputs are registered to C/C clocks or optionally K/K in single-clock mode.
It integrates a PLL for precise output data placement, JTAG 1149.1 boundary scan for testability, programmable impedance (ZQ calibration), and variable-drive HSTL-18 I/O buffers. Read latency is configurable via DOFF pin: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), matching QDR I timing when needed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (8M × 9 organization) |
| Max Clock Frequency | 333 MHz K-clock; enables 666 MT/s DDR throughput per port |
| Read Latency | Configurable: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) |
| Core Supply | 1.8 V ±0.1 V (VDD); powers logic and memory array |
| I/O Supply Range | 1.4 V to 1.8 V (VDDQ); supports HSTL-18 and 1.5 V interface levels |
| Burst Length | Fixed 2-word burst on every access; no burst-length configuration required |
| Package | 165-ball FBGA (13 mm × 15 mm × 1.4 mm); RoHS-compliant, Pb-free option available |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 1.4 mm height, 0.8 mm ball pitch, JEDEC MO-270AC compliant. Designed for high-density routing and thermal dissipation in multi-GHz systems.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Synchronous write data input | 9-bit parallel data sampled on rising edge of K/K; defines write payload width |
| Q[8:0] | Synchronous read data output | 9-bit parallel data registered to C/C clocks; supports source-synchronous capture via CQ |
| K / K | Input clock pair | Rising edges latch addresses and control timing; K used for read address, K for write address |
| C / C | Output clock pair | Rising edges gate read data outputs; minimizes skew between Q and C signals |
| CQ / CQ | Echo clock outputs | Source-synchronous copies of C/C; enable reliable high-speed data capture at receiver |
| WPS | Write port select | Active-low signal enabling write transactions; deassertion disables write port entirely |
| BWS0 | Byte write select | Active-low control for D[8:0]; allows partial writes without disturbing other bytes |
| DOFF | Read latency mode select | HIGH → 1.5-cycle latency; LOW → 1-cycle latency (QDR I compatibility) |
| VDD / VDDQ / VSS | Power and ground terminals | Separate 1.8V core (VDD) and I/O (VDDQ) supplies; multiple VSS balls ensure low-impedance return path |
| TCK/TMS/TDI/TDO | JTAG test interface | IEEE 1149.1 compliant boundary scan for production test and debug |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Enables full concurrency-simultaneous read and write to different addresses without arbitration delay |
| 2-word burst + DDR I/O | Delivers 666 MT/s per port at 333 MHz clock; doubles bandwidth vs. single-data-rate SRAMs |
| Echo clock (CQ/CQ) support | Eliminates need for board-level clock forwarding; simplifies timing closure in >500 MHz systems |
| Configurable read latency (DOFF) | Allows migration from legacy QDR I designs (1-cycle) or optimization for new QDR II pipelines (1.5-cycle) |
| HSTL-18 I/O with ZQ calibration | Ensures consistent drive strength and termination across voltage/temperature; meets JEDEC HSTL Class I specs |
Applications
| Network Packet Processing | Telecom Line Cards |
|---|---|
Use Scenario: High-speed buffering of ingress/egress packet headers and metadata in 10G/40G Ethernet switches. IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared descriptor queue with zero-latency interleaved read/write access. Use Value: Concurrent port operation eliminates pipeline stalls during header parsing and forwarding decisions, sustaining line-rate throughput. | Use Scenario: Buffering time-division multiplexed (TDM) voice/data streams in carrier-grade DSLAMs and OLTs. IC Role / Device Role / Timing Role: Synchronous memory providing deterministic 1-cycle or 1.5-cycle read latency for TDM frame alignment. Use Value: DOFF-selectable latency ensures compatibility with legacy TDM controllers while supporting newer low-jitter architectures. |
| Baseband Processing Units | High-Performance Test Equipment |
Use Scenario: Storing channel estimation coefficients and FFT intermediate results in LTE/5G baseband FPGAs. IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing directly with FPGA fabric via HSTL-18 I/O and echo clocks. Use Value: 2-word burst + DDR reduces external bus width by 2× versus single-word devices, saving FPGA I/O resources and PCB layers. | Use Scenario: Real-time waveform capture and pattern generation in automated test equipment (ATE) with >1 GSPS sampling. IC Role / Device Role / Timing Role: High-throughput memory buffer synchronizing ADC/DAC data streams using K/K and C/C clock domains. Use Value: Separate K/K and C/C clocks decouple address setup from data capture timing, easing system-level jitter budget allocation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-bit x 2M QDR II+ SRAM; 1000 MT/s (500 MHz K-clock); supports 4-word burst | Higher density and speed but wider data bus; requires redesign of data path and PCB layout | Select if system demands >72 Mbit capacity or >666 MT/s throughput and can accommodate 36-bit interface |
| ISSI IS61WV102418BLL-10BLI | 1M × 18 sync SRAM; 10 ns access; single-port; no DDR or echo clocks | Lacks concurrency, burst, and source-synchronous timing; suitable only for simpler buffering where latency tolerance >10 ns | Select only for cost-sensitive, non-concurrent applications where QDR II features are unnecessary |
Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1525KV18-333BZC uniquely balances 72-Mbit density, 333 MHz QDR II concurrency, and FBGA-165 footprint-making it optimal for space-constrained, high-throughput telecom and networking designs requiring strict timing control without over-provisioning.
Availability
CY7C1525KV18-333BZC is available at Aetrix Electronics and suitable for network packet processing, telecom line cards, baseband processing units, and high-performance test equipment requiring stable component supply across extended product lifecycles.
Supply support for CY7C1525KV18-333BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.
CY7C1525KV18 belongs to the QDR® II SRAM product line, designed specifically for applications demanding simultaneous high-speed read/write access, deterministic latency, and source-synchronous timing in infrastructure equipment.
FAQ
What is the function of the DOFF pin on CY7C1525KV18-333BZC?
The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle read latency optimized for QDR II pipeline efficiency; when LOW, it selects 1-cycle latency for backward compatibility with QDR I systems. This pin is sampled synchronously on the K clock and affects all subsequent read operations until changed.
Does CY7C1525KV18-333BZC require external termination resistors?
No-CY7C1525KV18-333BZC integrates programmable on-die termination (ODT) calibrated via the ZQ pin. When ZQ is pulled to VDDQ, the device performs automatic impedance calibration against a 240 Ω external reference resistor, eliminating need for discrete series or parallel termination components on DQ/CQ lines.
Can CY7C1525KV18-333BZC operate with only one clock domain?
Yes-it supports single-clock mode where both K and C clocks are driven by the same source. In this configuration, read data is registered to the same clock that latches addresses, simplifying clock tree design at the cost of reduced timing margin compared to dual-clock operation with dedicated C/C outputs.
What is the purpose of the BWS0 pin in the 8M × 9 configuration?
In CY7C1525KV18-333BZC (8M × 9), BWS0 is the sole byte write select and controls the entire 9-bit D[8:0] bus. When BWS0 is LOW, the full 9-bit word is written; when HIGH, the write operation is ignored. Unlike narrower configurations, no nibble-level select is provided-BWS0 operates as a global write enable for the port.
CY7C1525KV18-333BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 8M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1525KV18-333BZC FAQ
1.How can I place an order for CY7C1525KV18-333BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1525KV18-333BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1525KV18-333BZC reliable?
The price and inventory of CY7C1525KV18-333BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1525KV18-333BZC is usually 5 days.
3.What payment methods are accepted for CY7C1525KV18-333BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1525KV18-333BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1525KV18-333BZC?
CY7C1525KV18-333BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1525KV18-333BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1525KV18-333BZC?
For technical support, including CY7C1525KV18-333BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1525KV18-333BZC requirements.
6.How does Aetrix verify that CY7C1525KV18-333BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1525KV18-333BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1525KV18-333BZC meets industry standards.
7.What is the process for return or replacement of CY7C1525KV18-333BZC?
All CY7C1525KV18-333BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1525KV18-333BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1525KV18-333BZC part is unused and in its original packaging.
Return procedure for CY7C1525KV18-333BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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