Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C1525KV18-333BZXC

Part No.:
CY7C1525KV18-333BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1525KV18-333BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,528

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1525KV18-333BZXC from Cypress Semiconductor is an 8M × 9 (72-Mbit) QDR® II SRAM with synchronous pipelined architecture, dual independent read/write ports, 333 MHz clock operation, DDR interfaces on both ports (666 MT/s effective data rate), and 1.8V core / 1.4–1.8V I/O supply. It delivers high-bandwidth buffering for network packet processing in telecom line cards.

For engineers reviewing the CY7C1525KV18-333BZXC datasheet, CY7C1525KV18-333BZXC pinout, CY7C1525KV18-333BZXC application, or CY7C1525KV18-333BZXC equivalent, key selection criteria include burst depth (2-word), read latency (1 or 1.5 cycles depending on DOFF), echo clock support (CQ/CQ), and FBGA-165 package compatibility with HSTL-18 I/O.

Technical Context

This SRAM implements true QDR II architecture with physically separate read and write data paths-no bus turnaround required. It uses two independent input clocks (K/K) for address/data capture and two output clocks (C/C) plus echo clocks (CQ/CQ) to align data sampling at the receiver under tight skew constraints.

The device integrates a PLL for precise internal timing control, supports synchronous self-timed writes, and provides full data coherency via pipelined read-after-write behavior. DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes, enabling trade-offs between latency and throughput in real-time systems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (8M × 9 configuration)
Max Clock Frequency333 MHz - determines maximum sustained bandwidth of 6 Gbps (2 × 9-bit × 333 MHz)
Data Rate666 MT/s - double-data-rate transfer on both read and write ports
Read Latency1 or 1.5 cycles - selectable via DOFF pin; impacts pipeline depth in switch fabric designs
Core Supply1.8 V ±0.1 V - defines power rail stability requirements and decoupling design
I/O Supply Range1.4 V to 1.8 V - supports interoperability with 1.5V or 1.8V HSTL-18 logic families
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in dense PCB layouts

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXC suffix).

Pin/TerminalCircuit RoleDesign Meaning
D[8:0]Synchronous write data inputs9-bit parallel data sampled on rising edge of K clock; used for burst write operations
Q[8:0]Synchronous read data outputs9-bit parallel data driven on rising edge of C clock; aligned with CQ echo clock
K / KInput clocks (read/write)Dual-phase clock pair for address and data latching; enables DDR timing without external phase alignment
C / COutput clocksSeparate clocks for read data output timing; minimizes flight time mismatch vs. data signals
CQ / CQEcho clocksReplica of C/C clocks output with matched delay; simplifies source-synchronous capture at FPGA/ASIC receiver
WPSWrite port selectActive-low signal enabling write transactions; deassertion disables write port and ignores D[8:0]
BWS0Byte write selectActive-low control for 9-bit write mask; allows partial writes without read-modify-write overhead
DOFFRead latency mode selectHIGH = 1.5-cycle latency (higher throughput); LOW = 1-cycle latency (lower latency)
RPSRead port selectActive-low signal enabling read transactions; deassertion disables read port and tristates Q[8:0]
VDDQI/O power supplySupplies HSTL-18 output buffers; must be independently decoupled from core VDD
VREFReference voltageProvides mid-supply reference for HSTL input receivers; requires stable 0.7×VDDQ bias
ZQImpedance calibrationConnects to external 240 Ω resistor to ground for dynamic output driver impedance tuning

Key Features

FeatureDesign Value
Independent read/write portsEnables concurrent access without arbitration delay-critical for full-duplex packet buffering in switches
2-word burst architectureGuarantees minimum 18-bit data transfer per access, reducing address overhead in streaming applications
Echo clock (CQ/CQ) supportEliminates need for board-level trace length matching between clock and data nets in >300 MHz systems
Programmable drive strengthAllows dynamic adjustment of HSTL output impedance via ZQ calibration-improves signal integrity across PVT corners
JTAG 1149.1 boundary scanSupports IEEE-compliant test access for interconnect validation and production testing of high-density FBGA layout

Applications

Telecom Line Card BufferingHigh-Speed Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in OC-192/STM-64 line interface modules.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency, non-blocking buffer between SerDes PHY and traffic manager ASIC.

Use Value: Concurrent read/write eliminates pipeline stalls during back-to-back packet bursts, sustaining 10+ Gbps line-rate throughput.

Use Scenario: Implementing shared memory for crossbar scheduler lookups and queue depth tracking in enterprise switches.

IC Role / Device Role / Timing Role: High-bandwidth memory node providing synchronized access to multiple scheduler engines via dedicated ports.

Use Value: 666 MT/s effective bandwidth ensures sub-10 ns average memory access latency for real-time scheduling decisions.

Network Processor Co-Processor CacheTest Equipment Pattern Memory

Use Scenario: Offloading packet classification table storage from main NPU core to reduce cache pressure in DPI engines.

IC Role / Device Role / Timing Role: External L2-like cache supporting parallel rule-match and action-fetch operations.

Use Value: 1.5-cycle latency mode (DOFF=HIGH) maximizes match-throughput for 100+ million rules/sec performance.

Use Scenario: Storing stimulus/response vectors for high-speed digital pattern generators in ATE systems.

IC Role / Device Role / Timing Role: Deterministic-access memory delivering glitch-free waveform playback at 333 MHz clock rate.

Use Value: Echo clocks (CQ/CQ) enable precise source-synchronous capture at tester pins, eliminating setup/hold violations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-bit bus width, 10 ns access time, 3.3V core/I/O, no echo clocks or DOFF latency controlTargeted at legacy telecom systems requiring wider data path but lower frequency (≤100 MHz)Select when system uses 3.3V logic and requires x36 interface over x9; not suitable for 333 MHz QDR-II timing closure
ISSI IS61WV102418BLL-10BLI1M × 18 async SRAM, 10 ns access, single-port, 3.3V/2.5V, no DDR or burst capabilityUsed in low-cost control-plane buffering where concurrency and bandwidth are secondary to cost and simplicityChoose only for non-critical, low-frequency buffering; lacks QDR-II's concurrent transaction capability and echo clock support

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1525KV18-333BZXC uniquely delivers 333 MHz DDR dual-port operation with echo clocks and programmable latency-enabling deterministic, high-throughput memory access essential for modern packet-processing pipelines.

Availability

CY7C1525KV18-333BZXC is available at Aetrix Electronics and suitable for telecom infrastructure, high-speed switch fabric, and network test equipment requiring stable component supply, long-lifecycle support, and guaranteed FBGA-165 packaging consistency.

Supply support for CY7C1525KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's QDR® II SRAM product line, engineered specifically for high-bandwidth, low-latency packet buffering and switching applications where concurrent read/write access and precise timing control are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1525KV18-333BZXC?

The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for higher throughput; when LOW, it configures 1-cycle latency for minimal delay. This setting directly affects pipeline depth in connected logic and must be held stable during operation-no dynamic switching is supported.

Does CY7C1525KV18-333BZXC require external termination resistors?

Yes-HSTL-18 I/Os require source-series or parallel termination. VDDQ-referenced parallel termination (e.g., 50 Ω to VTT = VDDQ/2) is recommended for Q[8:0] outputs. D[8:0] inputs use on-die termination calibrated via ZQ pin connected to 240 Ω to ground, eliminating need for external resistors on write data lines.

Can CY7C1525KV18-333BZXC operate with only one clock domain (K = C)?

Yes-the device supports single-clock-domain operation where K and C are tied together. In this mode, read data is registered on the same clock edge as address, resulting in fixed 1-cycle latency regardless of DOFF state. However, echo clock (CQ) functionality is lost, increasing timing margin requirements on PCB layout.

Is JTAG boundary scan supported on CY7C1525KV18-333BZXC, and how is it enabled?

Yes-IEEE 1149.1 JTAG is fully implemented. It is enabled by holding TMS HIGH and applying five TCK pulses during power-up reset. Once active, the TAP controller supports IDCODE, EXTEST, SAMPLE/PRELOAD, and BYPASS instructions. No external pull-ups or configuration pins are needed-the feature is always present and functional after proper reset sequencing.

CY7C1525KV18-333BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
8M x 9
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1525KV18-333BZXC FAQ

1.How can I place an order for CY7C1525KV18-333BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1525KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1525KV18-333BZXC reliable?

The price and inventory of CY7C1525KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1525KV18-333BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1525KV18-333BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1525KV18-333BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1525KV18-333BZXC?

CY7C1525KV18-333BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1525KV18-333BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1525KV18-333BZXC?

For technical support, including CY7C1525KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1525KV18-333BZXC requirements.

6.How does Aetrix verify that CY7C1525KV18-333BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1525KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1525KV18-333BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1525KV18-333BZXC?

All CY7C1525KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1525KV18-333BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1525KV18-333BZXC part is unused and in its original packaging.

Return procedure for CY7C1525KV18-333BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1525KV18-333BZXC Tags

  • CY7C1525KV18-333BZXC
  • CY7C1525KV18-333BZXC PDF
  • CY7C1525KV18-333BZXC Datasheet
  • CY7C1525KV18-333BZXC Specifications
  • CY7C1525KV18-333BZXC Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C1525KV18-333BZXC
  • Buy CY7C1525KV18-333BZXC
  • CY7C1525KV18-333BZXC Price
  • CY7C1525KV18-333BZXC Distributor
  • CY7C1525KV18-333BZXC Supplier
  • CY7C1525KV18-333BZXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER