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Cypress Semiconductor Corp CY7C1543KV18-400BZI

Part No.:
CY7C1543KV18-400BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1543KV18-400BZI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:605

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Product details

Overview

CY7C1543KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 4M × 18 organization, 2.0-cycle read latency, 400 MHz clock operation (800 Mbps DDR per port), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), QVLD data-valid indicator, and supports concurrent transactions in high-bandwidth networking buffers.

For engineers reviewing the CY7C1543KV18 datasheet, CY7C1543KV18 pinout, CY7C1543KV18 application, or CY7C1543KV18 equivalent, key selection criteria include burst depth (four 18-bit words), HSTL I/O compatibility, PLL-enabled timing control, and FBGA-165 package constraints for high-speed PCB layout.

Technical Context

The CY7C1543KV18 implements a synchronous pipelined QDR II+ architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Address latching occurs on alternating rising edges of K and K clocks, enabling full-duplex operation without bus turnaround.

It uses a Phase-Locked Loop (PLL) to align output data with echo clocks CQ/CQ, ensuring precise 900 Mbps DDR timing at 400 MHz input clock. The DOFF pin selects between 2.0-cycle latency (PLL enabled, QDR II+ mode) and 1-cycle latency (PLL disabled, QDR I mode).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 configuration)
Max Clock Frequency 400 MHz - enables 800 Mbps DDR data rate per port
Read Latency 2.0 clock cycles - deterministic timing for pipeline-synchronized systems
Core Supply Voltage 1.8 V ± 0.1 V - defines logic threshold and power integrity requirements
I/O Supply Range 1.4 V to 1.8 V - supports HSTL Class I/II and mixed-voltage interface design
Package 165-ball FBGA (13 × 15 × 1.4 mm) - requires controlled-impedance routing and thermal pad grounding
Output Impedance Control ZQ pin tunes CQ, CQ, and Q[17:0] to 0.2 × RQ - enables on-die termination matching to system bus

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with exposed thermal pad.

Pin/Terminal Circuit Role Design Meaning
K / K Input clocks (positive/negative) Rising edges latch all synchronous inputs; define DDR timing reference for both ports
CQ / CQ Echo clock outputs Free-running, phase-aligned copies of K/K - simplify high-speed data capture at receiver
Q[17:0] Synchronous read data outputs Drive valid 18-bit words on rising edges of K/K; tri-state when RPS is deasserted
D[17:0] Synchronous write data inputs Sampled on rising edges of K/K; require setup/hold relative to K/K for reliable write capture
RPS / WPS Read/Write Port Select Active-low enables port access; deselection auto-tri-states outputs or ignores inputs
BWS[1:0] Byte Write Selects Control D[8:0] (BWS0) and D[17:9] (BWS1); enable partial-word writes without read-modify-write
QVLD Data validity indicator Edge-aligned with CQ/CQ - signals when Q[17:0] contains valid burst data
DOFF PLL disable control LOW disables PLL, forcing QDR I mode (1-cycle latency, ≤167 MHz); HIGH enables QDR II+ mode
ZQ Impedance calibration input Connects to external resistor to ground to set output driver strength for CQ/CQ/Q[17:0]

Key Features

Feature Design Value
Four-word burst architecture Reduces address bus toggling frequency by 4× versus single-word access - lowers EMI and routing congestion
Separate read/write data paths Eliminates bidirectional bus turnaround delay - enables true concurrent read/write in packet buffering
HSTL Class I/II compatible I/O Ensures signal integrity at 900 Mbps DDR rates with programmable drive strength and on-die termination
Integrated PLL with echo clocks Delivers deterministic, low-jitter data placement aligned to CQ/CQ - simplifies FPGA/ASIC capture logic
QVLD synchronization Provides unambiguous, edge-aligned indication of valid output data - removes need for complex strobe deskew

Applications

High-Speed Network Packet Buffer Telecom Line Card Memory

Use Scenario: Storing ingress/egress Ethernet or OTN frames in multi-gigabit line cards where back-to-back read/write must avoid bus contention.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level buffer between SERDES PHY and traffic manager ASIC, using K/K for clock domain crossing.

Use Value: Concurrent 400 MHz reads/writes deliver 14.4 GB/s aggregate bandwidth - sustains 100 GbE line-rate packet queuing without stall cycles.

Use Scenario: Buffering time-division multiplexed voice channels in carrier-grade DSLAMs and OLTs requiring deterministic latency.

IC Role / Device Role / Timing Role: Synchronous memory interfacing directly with TDM controller's parallel bus, leveraging RPS/WPS for channelized access.

Use Value: 2.0-cycle fixed latency ensures jitter-free frame alignment across 256+ voice streams - meets ITU-T G.8261 phase noise requirements.

Baseband Processing Memory Test Equipment Pattern Memory

Use Scenario: Holding FFT coefficients and intermediate results in LTE/5G baseband processors during real-time modulation/demodulation.

IC Role / Device Role / Timing Role: Burst-access memory co-located with DSP cores, using four-word bursts to match MAC instruction width.

Use Value: Four 18-bit word burst delivers 72 bits/cycle - matches 64-QAM symbol mapping throughput while minimizing address decode logic.

Use Scenario: Storing high-resolution stimulus/response patterns in automated test equipment (ATE) for SoC validation.

IC Role / Device Role / Timing Role: High-fidelity pattern generator memory synchronized to ATE timing controller via K/K and CQ/CQ.

Use Value: QVLD + echo clocks eliminate setup/hold uncertainty - achieves <±5 ps timing margin at 400 MHz for sub-nanosecond test accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1543KV18-450BZI 450 MHz max clock (vs. 400 MHz); identical pinout, timing, and feature set Supports higher bandwidth (16.2 GB/s) but requires tighter PCB layout and power delivery Select when system clock budget allows >400 MHz and board-level signal integrity is verified
AS7C3256B-15JIN Asynchronous 256K × 16 SRAM; no DDR, no echo clocks, no PLL; 15 ns access Limited to low-latency, non-concurrent applications; lacks QDR burst or coherency Only suitable for cost-sensitive, non-pipelined control-plane buffers where bandwidth <1 GB/s suffices

Compared with CY7C1543KV18-450BZI, this -400BZI variant trades 50 MHz bandwidth for relaxed timing margins and lower power; compared with AS7C3256B-15JIN, it provides 14× higher sustained throughput and deterministic dual-port concurrency - critical for data plane acceleration.

Availability

CY7C1543KV18-400BZI is available at Aetrix Electronics and suitable for high-speed network packet buffers, telecom line card memory, baseband processing subsystems, and ATE pattern generators requiring stable component supply across extended production lifecycles.

Supply support for CY7C1543KV18-400BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with emphasis on signal integrity and timing precision.

This device belongs to the QDR® II+ SRAM product line, engineered specifically for deterministic, high-throughput data buffering in packet-switched infrastructure where concurrent read/write and sub-cycle latency predictability are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1543KV18-400BZI?

The DOFF pin controls the internal PLL: when pulled HIGH (via 10 kΩ pull-up), the device operates in QDR II+ mode with 2.0-cycle read latency and full 400 MHz capability; when pulled LOW, the PLL is disabled and the device reverts to QDR I timing with 1-cycle latency and reduced maximum frequency (≤167 MHz). This pin must not be left floating.

How does the ZQ pin affect output driver behavior?

The ZQ pin sets the output impedance of Q[17:0], CQ, and CQ by calibrating internal drivers against an external resistor (RQ) tied between ZQ and ground. Output impedance becomes 0.2 × RQ; if ZQ is tied directly to VDDQ, minimum impedance mode is activated. Connecting ZQ to GND or leaving it unconnected violates specification and risks signal integrity failure.

Can CY7C1543KV18-400BZI support partial-word writes without read-modify-write?

Yes - via BWS0 and BWS1 pins, which independently enable writing to D[8:0] and D[17:9]. When a BWS signal is deasserted (HIGH), the corresponding byte group is ignored during the write cycle, preserving existing data in those bits. This eliminates the need for external read-modify-write logic in applications requiring granular updates.

What is the role of QVLD in system timing validation?

QVLD is edge-aligned with CQ and CQ and asserts precisely when Q[17:0] carries valid burst data. Unlike clock-derived strobes, QVLD accounts for internal propagation delays and PLL skew, providing a hardware-verified, jitter-tolerant ready signal for FPGA capture registers - essential for achieving setup/hold compliance at 900 Mbps DDR rates.

CY7C1543KV18-400BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1543KV18-400BZI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1543KV18-400BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1543KV18-400BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1543KV18-400BZI is usually 5 days.

3.What payment methods are accepted for CY7C1543KV18-400BZI?

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Once your CY7C1543KV18-400BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1543KV18-400BZI?

For technical support, including CY7C1543KV18-400BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1543KV18-400BZI requirements.

6.How does Aetrix verify that CY7C1543KV18-400BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1543KV18-400BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1543KV18-400BZI meets industry standards.

7.What is the process for return or replacement of CY7C1543KV18-400BZI?

All CY7C1543KV18-400BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1543KV18-400BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1543KV18-400BZI part is unused and in its original packaging.

Return procedure for CY7C1543KV18-400BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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