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Cypress Semiconductor Corp CY7C1543KV18-450BZC

Part No.:
CY7C1543KV18-450BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1543KV18-450BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:194

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Product details

Overview

CY7C1543KV18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 450 MHz QDR® II+ SRAM with separate read/write ports, 2.0-cycle read latency, DDR interfaces on both ports (900 Mbps effective data rate), and HSTL I/O supporting 1.4–1.8 V VDDQ. It serves as high-bandwidth buffer memory in network packet processors requiring concurrent burst reads and writes without bus turnaround.

For engineers reviewing the CY7C1543KV18 datasheet, CY7C1543KV18 pinout, CY7C1543KV18 application, or CY7C1543KV18 equivalent, key selection criteria include its 4-word burst architecture, DOFF-configurable latency mode (QDR I vs. QDR II+), echo clock timing support for 450 MHz operation, and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

This SRAM implements true dual-port synchronous pipelined architecture: independent K and K clocks drive separate read and write pipelines, with address latching on alternating rising edges. The internal PLL enables precise 2.0-cycle read latency alignment and supports echo clocks (CQ/CQ) for source-synchronous data capture at 900 MHz.

It uses multiplexed address inputs (A[19:0]), byte-write select inputs (BWS[1:0]), and port-select signals (RPS/WPS) to enable depth expansion and partial writes. Core logic operates at 1.8 V ±0.1 V, while I/O buffers are configurable between 1.5 V and 1.8 V via VDDQ, with VREF-biased HSTL input receivers and variable-drive HSTL outputs.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4M × 18-bit (72 Mbit); supports 4-word burst transfers per access
Max Clock Frequency 450 MHz; enables 900 Mbps DDR data rate per port
Read Latency 2.0 clock cycles when DOFF = HIGH; reduces to 1 cycle when DOFF = LOW (QDR I mode)
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O); VREF referenced for HSTL thresholds
Package 165-ball FBGA (13 × 15 × 1.4 mm); RoHS-compliant, Pb-free option available
Interface Standard HSTL Class I inputs / Class I or III outputs; ZQ pin enables output impedance tuning to system bus
JTAG Support IEEE 1149.1 compliant TAP controller for boundary scan and test access

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, JEDEC MO-245 compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input 18-bit parallel data sampled on rising edges of K/K; ignored unless WPS asserted
Q[17:0] Synchronous read data output 18-bit parallel data driven on rising edges of K/K; tri-stated when RPS deasserted
RPS / WPS Read/Write Port Select Active-low asynchronous enable; initiates port-specific access on next K/K edge
BWS[1:0] Byte Write Select Active-low controls which 9-bit half-word (D[8:0] or D[17:9]) is written during burst
K / K Dual input clocks Rising edges control all synchronous operations; K used for address/RPS, K for WPS/BWS
CQ / CQ Echo clocks Free-running, phase-aligned copies of K/K for source-synchronous data capture at receiver
QVLD Data validity indicator Asserted coincident with valid Q[17:0] output; edge-aligned with CQ/CQ for timing margin
DOFF PLL disable control LOW disables internal PLL, forcing QDR I timing (1-cycle latency, ≤167 MHz max)
ZQ Output impedance calibration Connects to external 240 Ω resistor to GND to tune CQ/Q[17:0] output drive to 48 Ω

Key Features

Feature Design Value
Independent read/write ports Eliminates data bus turnaround delay and contention in full-duplex memory systems
4-word burst architecture Reduces address bus frequency by 4× versus single-word access; improves bandwidth efficiency
Configurable latency mode DOFF pin selects between 2-cycle (QDR II+) and 1-cycle (QDR I) read latency for design flexibility
Source-synchronous timing CQ/CQ echo clocks simplify PCB routing and timing closure at 450 MHz clock frequency
HSTL I/O with ZQ calibration Ensures signal integrity across wide voltage range (1.4–1.8 V) and matches system trace impedance

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in line-rate switch fabric ASICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with concurrent read/write at 450 MHz to sustain 900 Mbps throughput per port.

Use Value: Eliminates bus turnaround overhead, enabling deterministic 2-cycle latency reads required for real-time packet classification engines.

Use Scenario: Capturing high-resolution waveform samples in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: Burst-mode memory buffer interfacing with FPGA-based sequencers, accepting write bursts from DAC controllers and feeding read bursts to comparator logic.

Use Value: 4-word burst + echo clocks ensure precise setup/hold margins at 450 MHz, reducing timing closure effort in multi-GHz ATE backplanes.

Telecom Line Card Buffering Multi-Core Processor Cache Coherency

Use Scenario: Interfacing between SERDES PHY and MAC layer in 10G/25G optical transport line cards.

IC Role / Device Role / Timing Role: Shared memory resource for traffic shaping and jitter buffering, accessed simultaneously by upstream and downstream data paths.

Use Value: Separate RPS/WPS pins allow independent arbitration of read/write ports, preventing starvation in asymmetric traffic profiles.

Use Scenario: Supporting directory-based cache coherency protocols in multi-socket server platforms.

IC Role / Device Role / Timing Role: Tag RAM storing snoop filter state, updated by one core (write port) while queried by others (read port) at full clock rate.

Use Value: Full data coherency guarantee ensures most-current tag values are always returned, avoiding stale-state errors in distributed cache management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-bit × 2M, 10 ns async access; no DDR interface or echo clocks Limited to lower-frequency systems (<100 MHz) where burst latency is not critical Choose only if legacy design requires pin-compatible replacement without DDR timing changes
ISSI IS61WV102418BLL-10BLI 1M × 18-bit, 10 ns async SRAM; no QDR architecture, no burst mode, no PLL Suitable for low-power, non-concurrent access scenarios (e.g., boot ROM shadowing) Select only when bandwidth < 200 Mbps and simultaneous read/write is unnecessary

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1543KV18 delivers 4.5× higher effective bandwidth via DDR + 4-word burst, supports deterministic 2-cycle latency for real-time systems, and provides echo-clock timing essential for >400 MHz operation - features absent in both alternatives.

Availability

CY7C1543KV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom line card buffering, and multi-core processor cache coherency applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1543KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

CY7C1543KV18 belongs to the QDR® II+ SRAM product line, engineered specifically for full-duplex, high-throughput memory subsystems in packet-switched infrastructure where deterministic latency and concurrent access are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1543KV18?

The DOFF pin controls the internal PLL: when pulled HIGH (via 10 kΩ pull-up), the device operates in QDR II+ mode with 2.0-cycle read latency and full 450 MHz capability; when pulled LOW, the PLL is disabled and the device reverts to QDR I timing with 1-cycle latency and reduced maximum frequency (≤167 MHz). This allows runtime mode switching without changing clock sources.

How does the ZQ pin affect signal integrity?

The ZQ pin connects to an external 240 Ω resistor to ground, enabling on-die calibration of CQ, CQ, and Q[17:0] output driver impedance to match the system's 48 Ω data bus. This calibration reduces reflection-induced jitter and ensures consistent eye opening across voltage/temperature variations-critical for reliable 900 Mbps DDR signaling.

Can CY7C1543KV18 be used with a single-ended clock source?

No. The device requires differential clock inputs (K and K) for proper operation: K drives read-port logic and address latching, while K drives write-port logic and write-data sampling. Both clocks must be supplied with matched trace lengths and controlled slew rates; using only one clock violates timing specifications and prevents valid burst operation.

What is the purpose of BWS[1:0] in this 18-bit configuration?

BWS[1:0] enables selective writing of 9-bit subwords: BWS0 controls D[8:0], BWS1 controls D[17:9]. When either signal is deasserted, its corresponding 9-bit segment remains unaltered during the 4-word burst write. This allows efficient partial updates (e.g., modifying header fields without overwriting payload) and reduces unnecessary memory writes in protocol processing engines.

CY7C1543KV18-450BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1543KV18-450BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1543KV18-450BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1543KV18-450BZC reliable?

The price and inventory of CY7C1543KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1543KV18-450BZC is usually 5 days.

3.What payment methods are accepted for CY7C1543KV18-450BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1543KV18-450BZC transactions.

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CY7C1543KV18-450BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1543KV18-450BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1543KV18-450BZC?

For technical support, including CY7C1543KV18-450BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1543KV18-450BZC requirements.

6.How does Aetrix verify that CY7C1543KV18-450BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1543KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1543KV18-450BZC meets industry standards.

7.What is the process for return or replacement of CY7C1543KV18-450BZC?

All CY7C1543KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1543KV18-450BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1543KV18-450BZC part is unused and in its original packaging.

Return procedure for CY7C1543KV18-450BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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