Cypress Semiconductor Corp CY7C1543KV18-450BZI
- Part No.:
- CY7C1543KV18-450BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1543KV18-450BZI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,661
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1543KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 4M × 18 organization, 450 MHz clock frequency, 2.0-cycle read latency, and separate read/write DDR ports delivering 900 MT/s effective data rate. It operates at 1.8 V core (VDD) and 1.4–1.8 V I/O (VDDQ), housed in a 165-ball FBGA (13 × 15 × 1.4 mm), and targets high-bandwidth packet buffering in network line cards.
For engineers reviewing the CY7C1543KV18 datasheet, CY7C1543KV18 pinout, CY7C1543KV18 application, or CY7C1543KV18 equivalent, key selection criteria include its four-word burst architecture, echo clock (CQ/CQ) timing support, QVLD data validity signaling, HSTL I/O compatibility, and DOFF-configurable 1-cycle vs. 2-cycle latency mode.
Technical Context
The CY7C1543KV18 implements a synchronous pipelined QDR II+ architecture with physically independent read and write data paths-eliminating bus turnaround-and uses rising edges of both K and K clocks for DDR data transfers. Its internal 4M × 18 array is organized as four 1M × 18 banks, accessed via a shared 20-bit address bus latched on alternating K-clock edges.
A built-in PLL enables precise data placement at 450 MHz; when disabled via DOFF = LOW, it reverts to QDR I operation up to 167 MHz with 1-cycle latency. Echo clocks CQ and CQ are free-running, edge-aligned replicas of K/K used for source-synchronous data capture, while QVLD provides cycle-accurate indication of valid output data on Q[17:0].
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4M × 18 configuration) |
| Max Clock Frequency | 450 MHz - enables 900 MT/s DDR throughput per port |
| Read Latency | 2.0 cycles (DOFF = HIGH); configurable to 1 cycle (DOFF = LOW) |
| Core Supply Voltage | 1.8 V ± 0.1 V - defines minimum noise margin and power consumption |
| I/O Supply Range | 1.4 V to 1.8 V - supports interoperability with 1.5 V and 1.8 V systems |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 450 MHz |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | 18-bit parallel data sampled on rising edges of K/K; BWS0/BWS1 enable byte-select writes |
| Q[17:0] | Synchronous read data output | 18-bit parallel data driven on rising edges of K/K; tri-stated when RPS is deasserted |
| RPS | Read port select | Active-LOW signal initiating read burst; sampled on rising edge of K clock |
| WPS | Write port select | Active-LOW signal initiating write burst; sampled on rising edge of K clock |
| K / K | Positive/negative input clocks | DDR timing references; all synchronous operations triggered on rising edges only |
| CQ / CQ | Echo clocks | Free-running, edge-aligned copies of K/K used for source-synchronous data capture |
| QVLD | Data validity indicator | Asserted coincident with valid Q[17:0] data; synchronized to CQ/CQ edges |
| DOFF | PLL disable control | Active-LOW pin switching between QDR II+ (2-cycle latency, 450 MHz) and QDR I (1-cycle, ≤167 MHz) modes |
| ZQ | Output impedance calibration | Connects to external resistor to ground to tune CQ/CQ/Q[17:0] drive strength to system bus impedance |
Key Features
| Feature | Design Value |
|---|---|
| Four-word burst architecture | Reduces address bus toggling by 75% versus single-word access - lowers EMI and routing complexity |
| Separate read/write DDR ports | Enables true concurrent read/write without bus contention - critical for full-duplex traffic buffers |
| Programmable 1/2-cycle latency | DOFF pin allows runtime selection between low-latency QDR I mode and high-throughput QDR II+ mode |
| HSTL I/O with variable drive | Ensures clean signal edges at 450 MHz while supporting impedance matching via ZQ calibration |
| JTAG 1149.1 test access port | Enables boundary scan testing and in-system debug without requiring additional test pads |
Applications
| Network Packet Buffering | High-Speed Switch Fabric Interface |
|---|---|
|
Use Scenario: Storing ingress/egress packets in 10G/40G Ethernet line cards where deterministic latency and zero bus turnaround are required. IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking first-in-first-out (FIFO) buffer with independent read/write pointers and burst-aligned data flow. Use Value: 900 MT/s per port sustains full line-rate throughput; QVLD eliminates setup/hold uncertainty during high-speed capture. |
Use Scenario: Interfacing ASIC-based switch fabric controllers to distributed memory banks in modular chassis switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory interface bridging custom logic and external memory subsystems using source-synchronous timing. Use Value: CQ/CQ echo clocks enable reliable data sampling at 450 MHz without complex PCB trace length matching. |
| Telecom Baseband Processing | Test Equipment Data Capture |
|
Use Scenario: Real-time buffering of IQ samples between RF front-end ADCs/DACs and DSP engines in 4G/LTE base stations. IC Role / Device Role / Timing Role: Synchronous burst memory providing time-aligned sample storage with minimal pipeline delay across multiple processing stages. Use Value: 2.0-cycle latency ensures predictable timing margins; DOFF flexibility allows legacy QDR I integration where PLL jitter is unacceptable. |
Use Scenario: Capturing high-speed serial data streams from DUTs in automated test equipment (ATE) with precise timestamp alignment. IC Role / Device Role / Timing Role: Deterministic-depth memory staging buffer synchronizing asynchronous input with system clock domain using dual-port isolation. Use Value: Independent RPS/WPS controls allow overlapping capture and analysis windows; BWS0/BWS1 enable selective word updates without full-line overwrite. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1543KV18-400BZI | Lower max clock (400 MHz), same 4M × 18 config, identical pinout and voltage specs | Reduced bandwidth (800 MT/s) but lower power (710 mA vs. 780 mA at ×18) | Select for cost-sensitive or thermally constrained designs where 400 MHz suffices |
| AS7C34098A-15JIN | Asynchronous 4M × 18 SRAM, no DDR, no echo clocks, 15 ns access, 3.3 V only | No concurrent read/write; requires external arbitration; incompatible I/O voltage and timing model | Only viable for legacy redesigns where QDR features are unused and board layout permits async interface |
Compared with CY7C1543KV18-450BZI, the -400BZI variant trades 100 MHz bandwidth for lower power and cost while maintaining full pin and functional compatibility; the AS7C34098A-15JIN lacks QDR architecture entirely, requiring fundamental redesign of timing, control, and I/O interfaces.
Availability
CY7C1543KV18-450BZI is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric interface, and telecom baseband processing requiring stable component supply, long-term lifecycle assurance, and guaranteed Pb-free compliance.
Supply support for CY7C1543KV18-450BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with headquarters in San Jose, CA.
This device belongs to Cypress's QDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth, low-latency memory interfacing in packet-switched infrastructure where concurrent read/write and source-synchronous timing are mandatory.
FAQ
What is the function of the DOFF pin on CY7C1543KV18-450BZI?
The DOFF (Disable PLL) pin is an active-LOW control that disables the internal Phase-Locked Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. When held HIGH (typically via 10 kΩ pull-up), it enables full QDR II+ operation at 450 MHz with 2.0-cycle latency. This pin directly determines the device's timing mode and bandwidth capability.
How does the ZQ pin affect output drive strength?
The ZQ pin connects to an external precision resistor (RQ) tied to ground, enabling on-die calibration of CQ, CQ, and Q[17:0] output driver impedance to match the system data bus. The calibrated output impedance equals 0.2 × RQ. If ZQ is tied directly to VDDQ, the device enters minimum-impedance mode; connecting ZQ to GND or leaving it floating is prohibited and may cause undefined behavior.
Can CY7C1543KV18-450BZI perform simultaneous read and write operations?
Yes - the CY7C1543KV18-450BZI supports true concurrent read and write operations due to its physically separate read and write data ports, independent port selects (RPS/WPS), and shared but multiplexed address bus. Each port operates autonomously: a read burst initiated by RPS can overlap with a write burst initiated by WPS, provided addresses do not conflict within the same bank, eliminating bus turnaround delays.
What is the role of QVLD in system timing design?
QVLD is a synchronous output signal edge-aligned with CQ and CQ that asserts precisely when Q[17:0] data is valid and stable. It replaces reliance on fixed setup/hold timing margins, allowing receivers to latch data only when QVLD is HIGH - essential for robust capture at 450 MHz. Unlike clock-enable schemes, QVLD reflects actual data readiness, accommodating process/voltage/temperature variations without derating.
CY7C1543KV18-450BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1543KV18-450BZI FAQ
1.How can I place an order for CY7C1543KV18-450BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1543KV18-450BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1543KV18-450BZI reliable?
The price and inventory of CY7C1543KV18-450BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1543KV18-450BZI is usually 5 days.
3.What payment methods are accepted for CY7C1543KV18-450BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1543KV18-450BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1543KV18-450BZI?
CY7C1543KV18-450BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1543KV18-450BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1543KV18-450BZI?
For technical support, including CY7C1543KV18-450BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1543KV18-450BZI requirements.
6.How does Aetrix verify that CY7C1543KV18-450BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1543KV18-450BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1543KV18-450BZI meets industry standards.
7.What is the process for return or replacement of CY7C1543KV18-450BZI?
All CY7C1543KV18-450BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1543KV18-450BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1543KV18-450BZI part is unused and in its original packaging.
Return procedure for CY7C1543KV18-450BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1543KV18-450BZI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

