Cypress Semiconductor Corp CY7C1543V18-333BZI

Overview

CY7C1543V18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR-II+ SRAM with separate read/write ports, 333 MHz operation (2.0-cycle read latency), DDR interfaces on both ports (666 MT/s effective data rate), and HSTL I/O supporting VDDQ = 1.4V to 1.8V. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1543V18 datasheet, CY7C1543V18 pinout, CY7C1543V18 application, or CY7C1543V18 equivalent, key selection criteria include burst depth (4-word), dual-clock timing (K/K), echo clock support (CQ/CQ), QVLD validity signaling, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This device implements a synchronous pipelined architecture with independent read and write address/data paths latched on alternating rising edges of K and K clocks. Its Delay Lock Loop (DLL) aligns CQ/CQ echo clocks to K/K with sub-cycle precision, enabling reliable data capture at 333 MHz without external phase alignment.

All inputs are registered on K or K rising edges; outputs pass through output registers synchronized to the same clocks. Write operations use on-chip self-timed control, while depth expansion is supported via RPS/WPS and BWS[1:0] signals - allowing seamless stacking of multiple CY7C1543V18 devices in 36-bit or wider memory subsystems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with CY7C1545V18, this part offers narrower 18-bit bus and simpler BWS control, reducing PCB layer count; compared with CY7C1543V18-250BZI, it delivers 33% higher bandwidth at the cost of ~10% higher active current - justifying use in latency-critical packet forwarding paths.

Availability

CY7C1543V18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and real-time signal processing buffer applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1543V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial and communications infrastructure.

CY7C1543V18 belongs to Cypress's QDR-II+ SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in carrier-grade networking and test instrumentation.

FAQ

What is the minimum VDDQ voltage supported by CY7C1543V18?

The device supports VDDQ from 1.4 V to 1.8 V, as confirmed in the "DC Electrical Characteristics" section of the datasheet (Document 001-05389 Rev. *F). Operation at 1.4 V reduces I/O power and noise margin but remains within specification for HSTL Class I compliance when properly terminated.

Can CY7C1543V18 operate without the DLL enabled?

Yes - asserting DOFF LOW disables the DLL and reverts the device to QDR-I timing mode, limiting max frequency to 167 MHz. In this mode, CQ/CQ become simple buffered copies of K/K, and all timing parameters shift to QDR-I specifications listed in the same datasheet.

How does the BWS[1:0] signal function in a 4M × 18 configuration?

BWS[0] controls write enable for D[8:0], and BWS[1] controls D[17:9]. When either is LOW, the corresponding 9-bit byte is written; when HIGH, that byte retains its prior value - enabling efficient partial-word updates without read-modify-write cycles.

Is the 165-ball FBGA package lead-free compliant?

Yes - the "BZI" suffix denotes a Pb-free, RoHS-compliant 165-ball FBGA package (15 × 17 × 1.4 mm), with NiPdAu surface finish and JEDEC-standard moisture sensitivity level (MSL) 3 rating per datasheet revision *F.