Cypress Semiconductor Corp CY7C1545KV18-400BZC

Overview

CY7C1545KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 2.0-cycle read latency, 400 MHz clock operation (800 MT/s data rate), HSTL I/O, and 1.8 V core / 1.4–1.8 V I/O supply. It delivers concurrent read/write throughput for high-speed packet buffering in network switches and routers.

For engineers reviewing the CY7C1545KV18 datasheet, CY7C1545KV18 pinout, CY7C1545KV18 application, or CY7C1545KV18 equivalent, this page provides verified specifications, FBGA-165 pin mapping, QDR II+ burst timing behavior, and validated alternatives for memory subsystem design.

Technical Context

The CY7C1545KV18 implements a synchronous pipelined architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its four-word burst transfers 144 bits per read or write cycle at 400 MHz, achieving 28.8 GB/s aggregate bandwidth across dual DDR interfaces.

It uses K and K input clocks for precise edge-aligned sampling of address and control signals, with echo clocks CQ/CQ synchronized to K/K for reliable high-speed data capture. The internal PLL enables accurate data placement at full speed; DOFF pin selects between QDR II+ (2-cycle latency) and QDR I (1-cycle latency) modes.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.

Compared with IDT72T36150 and IS61WV102436B, CY7C1545KV18 delivers 20% higher bandwidth and deterministic 2-cycle latency critical for real-time networking stacks, while maintaining pin compatibility with industry-standard QDR II+ layouts.

Availability

CY7C1545KV18 is available at Aetrix Electronics and suitable for network infrastructure, high-speed test instrumentation, telecom baseband processing, and AI accelerator memory subsystems requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1545KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems.

CY7C1545KV18 belongs to the QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory access in packet-switched networks and real-time signal processing platforms.

FAQ

What is the function of the DOFF pin on CY7C1545KV18?

The DOFF pin controls internal PLL operation: when HIGH, the PLL is active and the device operates in QDR II+ mode with 2.0-cycle read latency at up to 400 MHz; when LOW, the PLL is disabled and the device reverts to QDR I mode with 1-cycle latency and a maximum clock frequency of 167 MHz. This allows backward compatibility with legacy QDR I controllers.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external 240 Ω resistor to ground to calibrate the output impedance of Q[35:0], CQ, and CQ pins to approximately 50 Ω (0.2 × RQ). This matching minimizes signal reflections on high-speed PCB traces. Leaving ZQ unconnected or tying it to GND violates specification and causes undefined drive strength.

Can CY7C1545KV18 be used with a 1.5 V I/O supply?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V operation. HSTL Class I input thresholds and variable-drive output buffers are designed for reliable signaling across this range, making it compatible with 1.5 V FPGA I/O banks without level-shifting.

What is the role of BWS[3:0] during a write operation?

BWS[3:0] are active-LOW byte write enable signals that independently gate 9-bit segments of the 36-bit D[35:0] bus: BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. Only bytes with asserted (LOW) BWS signals are written; others retain prior values, enabling partial-word updates without read-modify-write cycles.